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12 Oct 2009

Volume 95, Issue 15, Articles (15xxxx)

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Appl. Phys. Lett. 95, 153101 (2009); http://dx.doi.org/10.1063/1.3244597 (3 pages)

Geunjae Kwak, Mikyung Lee, Karuppanan Senthil, and Kijung Yong
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Continuous particle assembly in a capillary cell

Lin Xu, Adrian Neild, Tuck Wah Ng, and Fen Fen Shao

Appl. Phys. Lett. 95, 153501 (2009); http://dx.doi.org/10.1063/1.3249582 (3 pages) | Cited 7 times

Online Publication Date: 12 October 2009

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Capillary force mechanisms have the advantages of providing the motive force to move groups of particles to locations of interest while holding them in place, offering delicateness, and obviating the use external energy sources. We report a capillary force method that permits particles to remain hydrated, while assembled and harvested in batches using a single setup, furthermore assembly of different sizes/types is possible. The physics behind the process is described and the technique demonstrated with the formation of an ensemble of 6 μm particles.
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81.16.Dn Self-assembly
68.03.Cd Surface tension and related phenomena
47.61.-k Micro- and nano- scale flow phenomena
47.55.nb Capillary and thermocapillary flows

Enhancing the retention properties of ZnO memory transistor by modifying the channel/ferroelectric polymer interface

C. H. Park, Gyubaek Lee, Kwang H. Lee, Seongil Im, Byoung H. Lee, and Myung M. Sung

Appl. Phys. Lett. 95, 153502 (2009); http://dx.doi.org/10.1063/1.3247881 (3 pages) | Cited 10 times

Online Publication Date: 12 October 2009

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We report on the fabrication of ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] ferroelectric layer. Our NVM-TFT operates on glass substrates under low voltage write-erase (WR-ER) pulse of ±20 V with a maximum field effect mobility of ∼ 1 cm2/V s, maximum memory window of ∼ 20 V, and WR-ER current ratio of 4×102. When the NVM-TFT has a modified channel/ferroelectric interface with an inserted thin Al2O3 buffer layer, our device shows long retention time of more than 104 s, which is much enhanced compared to that of the other device without the buffer. The dynamic response of our devices with or without the buffer was clear enough to distinguish the WR and ER states as performed with 300 ms pulse.
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84.30.Sk Pulse and digital circuits
85.30.Tv Field effect devices
77.55.-g Dielectric thin films
85.50.Gk Non-volatile ferroelectric memories
77.84.Jd Polymers; organic compounds

ZnO-based metal-semiconductor field-effect transistors on glass substrates

H. Frenzel, M. Lorenz, A. Lajn, H. von Wenckstern, G. Biehne, H. Hochmuth, and M. Grundmann

Appl. Phys. Lett. 95, 153503 (2009); http://dx.doi.org/10.1063/1.3242414 (3 pages) | Cited 7 times

Online Publication Date: 12 October 2009

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We investigate the influence of quartz glass and borosilicate glass substrates on the electrical properties of ZnO-based metal-semiconductor field-effect transistors (MESFETs). The n-type ZnO thin-film channels were grown by pulsed-laser deposition and MESFETs were processed by reactive dc sputtering of AgxO-Schottky gate contacts. All devices are in the normally-off state. They exhibit very low off-currents in the range of 10−13 A and on/off ratios of maximum 6 decades. The channel mobilities are highest for ZnO on quartz with 1.3 cm2/Vs. The glass substrates introduce a compensating effect on the conduction of the ZnO channel resulting in higher on/off-voltages and lower on-current.
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85.30.Tv Field effect devices
81.15.Fg Pulsed laser ablation deposition
68.55.ag Semiconductors
81.15.Cd Deposition by sputtering
72.20.Fr Low-field transport and mobility; piezoresistance
73.61.Ga II-VI semiconductors
72.80.Ey III-V and II-VI semiconductors

Nanolamellar magnetoelectric BaTiO3–CoFe2O4 bicrystal

Shenqiang Ren, Mark Laver, and Manfred Wuttig

Appl. Phys. Lett. 95, 153504 (2009); http://dx.doi.org/10.1063/1.3241999 (3 pages) | Cited 4 times

Online Publication Date: 13 October 2009

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Here, we report a spontaneously formed nanolamellar BaTiO3–CoFe2O4 bicrystal. (1math0) interfaces join the BaTiO3 and CoFe2O4 single crystalline periodically arranged lamellae that have a common [111] direction. The superlattice of approximately 2 nm wavelength is magnetoelectric with a frequency dependent coupling coefficient of 20 mV/Oe cm at 100 Hz. The BaTiO3 component is a ferroelectric relaxor with a Vogel–Fulcher temperature of 311 K. The relaxor behavior gives rise to a magnetic tunability of the relative dielectric constant 〈εr〉−1dεr/dH ≈ 10−2. Since the material can be produced by standard ceramic processing methods, the discovery represents great potential for magnetoelectric devices.
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81.07.Bc Nanocrystalline materials
75.80.+q Magnetomechanical effects, magnetostriction
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Tt Fine-particle systems; nanocrystalline materials
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)

Diminish the screen effect in field emission via patterned and selective edge growth of ZnO nanorod arrays

Nishuang Liu, Guojia Fang, Wei Zeng, Hao Long, Longyan Yuan, and Xingzhong Zhao

Appl. Phys. Lett. 95, 153505 (2009); http://dx.doi.org/10.1063/1.3247887 (3 pages) | Cited 13 times

Online Publication Date: 13 October 2009

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The authors report on the field emission from controlled selective grown zinc oxide (ZnO) nanorod arrays by hydrothermal reaction. With the combined effect from a ZnO seed layer and a passivation layer for nanorod growth, ZnO nanorods could only grow on the edge of a 4 μm diameter circle. The ZnO nanorods hollow arrays present excellent electron emission characteristics duo to its typical morphology which can significantly diminish the screen effect. By calculating the electrostatic field distribution, it was found that the electrostatic field of the ZnO nanorods hollow arrays is significantly higher than that of the solid arrays.
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81.16.-c Methods of micro- and nanofabrication and processing
81.07.-b Nanoscale materials and structures: fabrication and characterization
61.46.-w Structure of nanoscale materials
79.70.+q Field emission, ionization, evaporation, and desorption
81.05.Dz II-VI semiconductors

Si nanocrystal p-i-n diodes fabricated on quartz substrates for third generation solar cell applications

Ivan Perez-Wurfl, Xiaojing Hao, Angus Gentle, Dong-Ho Kim, Gavin Conibeer, and Martin. A. Green

Appl. Phys. Lett. 95, 153506 (2009); http://dx.doi.org/10.1063/1.3240882 (3 pages) | Cited 35 times

Online Publication Date: 15 October 2009

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We fabricated p-i-n diodes by sputtering alternating layers of silicon dioxide and silicon rich oxide with a nominal atomic ratio O/Si = 0.7 onto quartz substrates with in situ boron for p-type and phosphorus for n-type doping. After crystallization, dark and illuminated I-V characteristics show a diode behavior with an open circuit voltage of 373 mV. Due to the thinness of the layers and their corresponding high resistivity, lateral current flow results in severe current crowding. This effect is taken into account when extracting the electronic bandgap based on temperature dependent diode I-V measurements.
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85.30.Kk Junction diodes
84.60.Jt Photoelectric conversion
81.15.Cd Deposition by sputtering
81.05.Cy Elemental semiconductors
61.72.uf Ge and Si
81.07.-b Nanoscale materials and structures: fabrication and characterization
85.35.-p Nanoelectronic devices
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