APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

12 Oct 2009

Volume 95, Issue 15, Articles (15xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 153101 (2009); http://dx.doi.org/10.1063/1.3244597 (3 pages)

Geunjae Kwak, Mikyung Lee, Karuppanan Senthil, and Kijung Yong
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Tunneling anisotropic spin polarization in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

A. Einwanger, M. Ciorga, U. Wurstbauer, D. Schuh, W. Wegscheider, and D. Weiss

Appl. Phys. Lett. 95, 152101 (2009); http://dx.doi.org/10.1063/1.3247187 (3 pages) | Cited 3 times

Online Publication Date: 12 October 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report here on anisotropy of spin polarization obtained in lateral all-semiconductor, all-electrical spin injection devices employing p+-(Ga,Mn)As/n+-GaAs Esaki diode structures as spin aligning contacts, resulting from the dependence of the efficiency of spin tunneling on the orientation of spins with respect to different crystallographic directions. We observed an in-plane anisotropy of 8% in the case of spins oriented either along [1math0] or [110] direction and 25% anisotropy between in-plane and perpendicular-to-plane orientations of spins.
Show PACS
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
81.05.Ea III-V semiconductors

Monte Carlo investigation of terahertz plasma oscillations in gated ultrathin channel of n-InGaAs

J.-F. Millithaler, J. Pousset, L. Reggiani, P. Ziade, H. Marinchio, L. Varani, C. Palermo, J. Mateos, T. González, S. Perez, and D. Pardo

Appl. Phys. Lett. 95, 152102 (2009); http://dx.doi.org/10.1063/1.3248096 (3 pages) | Cited 4 times

Online Publication Date: 12 October 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
By numerical simulations we investigate the dispersion of the plasma frequency in a gated channel of n-type InGaAs layer of thickness W and submicron length L at T = 300 K. In the presence of a source-drain voltage and for a carrier concentrations of 1018 cm−3 the spectra evidences a peaked shape with two main bumps, the former at high frequency corresponding to the three-dimensional plasma frequency and the latter at a low frequency. The frequency value of the latter peak exhibits a dispersion as the inverse of the channel length in agreement with the predictions of gradual channel approximation. At increasing drain voltages the instabilities associated with the presence of Gunn domains are responsible for a suppression of the plasma peak in favor of the onset of a peak in the subterahertz domain associated with transit time effects.
Show PACS
73.50.Mx High-frequency effects; plasma effects
73.61.Ey III-V semiconductors
81.05.Ea III-V semiconductors
52.77.-j Plasma applications

In situ passivation of InP surface using H2S during metal organic vapor phase epitaxy

Hong-Liang Lu, Yuki Terada, Yukihiro Shimogaki, Yoshiaki Nakano, and Masakazu Sugiyama

Appl. Phys. Lett. 95, 152103 (2009); http://dx.doi.org/10.1063/1.3233935 (3 pages) | Cited 4 times

Online Publication Date: 13 October 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An in situ surface passivation of InP(100) using H2S during metal organic vapor phase epitaxy has been characterized by x-ray photoemission spectroscopy and photoluminescence. X-ray photoelectron spectra indicate that the H2S-treated InP at 300 °C is free of P and In oxides even after exposure to air. The enhancement of photoluminescence intensity confirms that H2S passivation of an InP epilayer can reduce the surface defects. It is shown that H2S treatment results in In–S bonds, which dominate the sulfur-passivated InP surface, effectively suppressing interface oxidation during the subsequent ultrathin Al2O3 dielectric film growth.
Show PACS
81.65.Rv Passivation
79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.55.-g Dielectric thin films
68.55.ag Semiconductors

Single spin transport spectroscopy: Current blockade and spin decay

Gerold Kiesslich, Gernot Schaller, Clive Emary, and Tobias Brandes

Appl. Phys. Lett. 95, 152104 (2009); http://dx.doi.org/10.1063/1.3243693 (3 pages) | Cited 4 times

Online Publication Date: 13 October 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present a theory of a single-electron transistor exchange-coupled to a localized spin. We show how to gain detailed quantitative knowledge about the attached spin such as spin size, exchange coupling strength, Landé g-factor, and spin decay time T1 by utilizing a robust blockade phenomenon of dc magnetotransport with accompanying noise enhancement. Our studies are of particular relevance to spin-resolved scanning single-electron transistor microscopy, electronic transport through nanomagnets, and the effect of hyperfine interaction on transport electrons by surrounding nuclear spins.
Show PACS
73.23.Hk Coulomb blockade; single-electron tunneling
85.35.Gv Single electron devices
75.30.Et Exchange and superexchange interactions
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
72.25.Fe Optical creation of spin polarized carriers
73.40.Gk Tunneling
75.50.Tt Fine-particle systems; nanocrystalline materials
71.70.Jp Nuclear states and interactions

Temperature-dependent Hall and photoluminescence evidence for conduction-band edge shift induced by alloying ZnO with magnesium

X. H. Pan, W. Guo, Z. Z. Ye, B. Liu, Y. Che, W. Tian, D. G. Schlom, and X. Q. Pan

Appl. Phys. Lett. 95, 152105 (2009); http://dx.doi.org/10.1063/1.3236771 (3 pages) | Cited 3 times

Online Publication Date: 14 October 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This work discusses the effect of conduction-band edge shift induced by alloying ZnO with magnesium. Temperature-dependent Hall and temperature-dependent photoluminescence measurements are used to characterize the epitaxial Zn1−xMgxO thin films grown on (111) Si using intervening epitaxial Lu2O3 buffer layers, which prove that the addition of Mg in ZnO shifts the conduction-band edge to higher energy, thus increasing the activation energy of the defect donor states and reducing the n-type background carrier concentration.
Show PACS
81.05.Dz II-VI semiconductors
71.20.Nr Semiconductor compounds
72.20.My Galvanomagnetic and other magnetotransport effects
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
68.55.ag Semiconductors
71.55.Gs II-VI semiconductors

Nonvolatile resistive switching in spinel ZnMn2O4 and ilmenite ZnMnO3

Haiyang Peng and Tom Wu

Appl. Phys. Lett. 95, 152106 (2009); http://dx.doi.org/10.1063/1.3249630 (3 pages) | Cited 13 times

Online Publication Date: 14 October 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report that spinel ZnMn2O4 and ilmenite ZnMnO3 show excellent unipolar resistive switching behaviors, with ON/OFF ratios larger than 104. For both oxides, retention of more than 10 h and good endurance are achieved. Conduction of the OFF state is dominated by the space-charge-limited conduction mechanism, while the Ohmic behavior dictates the ON state, which suggests a filamentary conduction mechanism. Our study introduces two promising materials candidates for nonvolatile resistive random access memory devices, and furthermore it suggests that formation and rupture of conducting filaments are universal in certain ternary oxides even though they may possess distinct crystalline structures.
Show PACS
73.50.Fq High-field and nonlinear effects
73.61.Le Other inorganic semiconductors
73.40.Ns Metal-nonmetal contacts
84.30.Sk Pulse and digital circuits

Behaviors of gate induced drain leakage stress in lightly doped drain n-channel metal-oxide-semiconductor field-effect transistors

X. H. Ma, Y. R. Cao, H. X. Gao, H. F. Chen, and Y. Hao

Appl. Phys. Lett. 95, 152107 (2009); http://dx.doi.org/10.1063/1.3250435 (3 pages) | Cited 5 times

Online Publication Date: 14 October 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The behaviors of the gate induced drain leakage (GIDL) stress during the single and alternating stresses were investigated. A combination of threshold voltage Vth and GIDL current Igidl has been applied to investigate n-channel metal-oxide-semiconductor field-effect transistors with different gate oxide thicknesses. The recovery and enhancement of Vth depending on the gate oxide thickness, are found to result from the GIDL stress in the two processes. This study reveals that different behaviors of GIDL stress for different gate oxide thicknesses are attributed to the rivalship between the hole-induced carrier mobility increase and the interface states-induced increase in lightly doped drain resistance.
Show PACS
85.30.Tv Field effect devices

Real-time band structure changes of GaAs during continuous dynamic compression to 5 GPa

P. Grivickas, M. D. McCluskey, and Y. M. Gupta

Appl. Phys. Lett. 95, 152108 (2009); http://dx.doi.org/10.1063/1.3247886 (3 pages) | Cited 2 times

Online Publication Date: 15 October 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Real time changes of the GaAs band structure were determined using time-resolved photoluminescence (PL) spectroscopy, with nanosecond resolution, in single-event continuous compression experiments. Continuous compression to 5 GPa over 150 ns was achieved by impacting fused silica buffers preceding the GaAs crystals. PL spectra and compression wave profiles were measured simultaneously for uniaxial strain compression along the [100] orientation. Below 3 GPa, PL peaks from Te donors and Zn acceptors showed a blueshift upon compression, consistent with a widening of the band gap. At 3 GPa, the PL intensity decreased abruptly, due to a direct-to-indirect transition.
Show PACS
71.20.Nr Semiconductor compounds
78.55.Cr III-V semiconductors
78.47.jd Time resolved luminescence

Measurements of current-voltage-induced heating in the Al/SrTiO3−xNy/Al memristor during electroformation and resistance switching

A. Shkabko, M. H. Aguirre, I. Marozau, T. Lippert, and A. Weidenkaff

Appl. Phys. Lett. 95, 152109 (2009); http://dx.doi.org/10.1063/1.3238563 (3 pages) | Cited 5 times

Online Publication Date: 15 October 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Heating of the Al/SrTiO3−xNy/Al memristor is characterized during electroformation and switching of the resistances. The electrode with the higher voltage potential is heated to higher temperatures than the electrode with the lower potential, suggesting a reversible (nonstable) displacement of the anions in a low voltage region (|V|<±3 V). Application of a threshold voltage appropriate for resistance switching (|V| ≥ ±3 V) facilitates migration of anions to the anode interface and increases the local anode temperature to a maximum of 285 °C. The hysteretic I-V curves are discussed taking into account tunnel barrier formation/break and inhomogeneous Schottky barrier modification at the anode interface.
Show PACS
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Kk Junction diodes

Chemical stability and transport properties of ultrathin La1.2Sr1.8Mn2O7 Ruddlesden–Popper films

M. Matvejeff, K. Yoshimatsu, H. Kumigashira, M. Oshima, and M. Lippmaa

Appl. Phys. Lett. 95, 152110 (2009); http://dx.doi.org/10.1063/1.3243978 (3 pages) | Cited 4 times

Online Publication Date: 15 October 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Epitaxial La1.2Sr1.8Mn2O7 films with n = 2 Ruddlesden–Popper structure were grown on SrTiO3 (001) substrates. Decomposition through water intercalation led to the disappearance of the metal-insulator transition in samples exposed to ambient atmosphere. Crystal damage was limited to the surface layer only, demonstrating the anisotropic nature of the water intercalation process. By protecting films with a SrTiO3 capping layer, the metal-insulator transition persisted down to 2.5 unit cell thick films. In thinner films, we propose a mechanism related to the loss of interlayer ferromagnetic order in favor of in-plane antiferromagnetism as a reason for the loss of the metallic state.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology
71.30.+h Metal-insulator transitions and other electronic transitions
75.50.Ee Antiferromagnetics
Author Select

Role of copper in light induced minority-carrier lifetime degradation of silicon

H. Savin, M. Yli-Koski, and A. Haarahiltunen

Appl. Phys. Lett. 95, 152111 (2009); http://dx.doi.org/10.1063/1.3250161 (3 pages) | Cited 6 times

Online Publication Date: 16 October 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigate the impact of copper on the light induced minority-carrier lifetime degradation in various crystalline silicon materials. We demonstrate here that the presence of neither boron nor oxygen is necessary for the degradation effect. In addition, our experiments reveal that copper contamination alone can cause the light induced minority-carrier lifetime degradation.
Show PACS
72.40.+w Photoconduction and photovoltaic effects
61.72.jj Interstitials
72.80.Cw Elemental semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Characterization of electrical conductivity in a zeolitelike material

V. Soghomonian and J. J. Heremans

Appl. Phys. Lett. 95, 152112 (2009); http://dx.doi.org/10.1063/1.3251070 (3 pages) | Cited 4 times

Online Publication Date: 16 October 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present the electrical characterization of a zeolitelike oxo-vanadium arsenate framework. The experimentally obtained electronic and ionic conductivities and their interactions are discussed. Further, we investigate the potential use of electrically conducting zeolitelike materials in electrical energy storage applications, in light of the material’s structural and electronic characteristics.
Show PACS
66.30.H- Self-diffusion and ionic conduction in nonmetals
71.20.Ps Other inorganic compounds
84.60.-h Direct energy conversion and storage

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

Daniel J. Lichtenwalner, Veena Misra, Sarit Dhar, Sei-Hyung Ryu, and Anant Agarwal

Appl. Phys. Lett. 95, 152113 (2009); http://dx.doi.org/10.1063/1.3251076 (3 pages) | Cited 6 times

Online Publication Date: 16 October 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Lateral metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated on 4H-SiC utilizing deposited dielectrics and gate-last processing. The bilayer dielectric consists of thin nitrided SiO2 covered by 25 nm of Al2O3 deposited using atomic layer deposition. Field-effect mobility and threshold voltage (VT) vary with SiC nitric oxide (NO) anneal temperature. Peak mobility of 106 cm2/V⋅s was obtained with corresponding VT of 0.8 V. The peak mobility decreases to 61 cm2/V⋅s with a lower temperature NO anneal, while the VT increased to 1.4 V. Thus with proper gate engineering, high-mobility normally off MOSFET devices can be obtained, leading to higher-performance gate-controlled power devices.
Show PACS
85.30.Tv Field effect devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.Cc Kinetics of defect formation and annealing

Ultralow-voltage transparent electric-double-layer thin-film transistors processed at room-temperature

Jie Jiang, Qing Wan, Jia Sun, and Aixia Lu

Appl. Phys. Lett. 95, 152114 (2009); http://dx.doi.org/10.1063/1.3251782 (3 pages) | Cited 13 times

Online Publication Date: 16 October 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Electric-double-layer effect is observed in mesoporous SiO2 films deposited by plasma-enhanced chemical vapor deposition at room temperature. Room-temperature processed transparent InGaZnO4 thin film transistors (TFTs) gated with such mesoporous SiO2 dielectric show an ultralow operating voltage of 1.0 V due to the large electric-double-layer capacitance. The InGaZnO4 TFTs exhibit a good performance with a high field-effect mobility of 28.5 cm2/V s, a low subthreshold swing of 110 mV/decade, and a large on-off ratio of 1.1×106, respectively. Such ultralow-voltage devices are very promising for low-power transparent macroelectronics on temperature-sensitive substrates.
Show PACS
85.30.Tv Field effect devices
84.32.Tt Capacitors
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close