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12 Oct 2009

Volume 95, Issue 15, Articles (15xxxx)

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Appl. Phys. Lett. 95, 153101 (2009); http://dx.doi.org/10.1063/1.3244597 (3 pages)

Geunjae Kwak, Mikyung Lee, Karuppanan Senthil, and Kijung Yong
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Impact dynamics of water droplets on chemically modified WOx nanowire arrays

Geunjae Kwak, Mikyung Lee, Karuppanan Senthil, and Kijung Yong

Appl. Phys. Lett. 95, 153101 (2009); http://dx.doi.org/10.1063/1.3244597 (3 pages) | Cited 7 times

Online Publication Date: 12 October 2009

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The effects of surface energy on the wetting transition for impinging water droplets were investigated on the chemically modified WOx nanowire surfaces. We could modify the surface energy of the nanowires through chemisorption of alkyltrichlorosilanes with various carbon chain lengths and also by the ultraviolet-enhanced decomposition of self assembled monolayer molecules. Three surface wetting states could be identified through the balance between antiwetting and wetting pressures. This approach establishes a simple strategy for design of the water-repellent surface to impinging droplets.
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68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.08.Bc Wetting
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Anisotropic electronic properties of Ni nanowires in oriented mesoporous silica film

Wei Cui, Xuemin Lu, Bin Su, Qinghua Lu, and Yen Wei

Appl. Phys. Lett. 95, 153102 (2009); http://dx.doi.org/10.1063/1.3246164 (3 pages) | Cited 1 time

Online Publication Date: 12 October 2009

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The electronic behavior of Ni nanowires in an oriented mesoporous silica thin film was reported. The hybrid film was prepared using a facile method of airflow-induced mesopore orientation from silica sol solution containing Ni2+ cation, followed by H2 reduction. Because of the confinement effect, the Ni nanowires were aligned in the oriented mesochannels, which resulted in anisotropic electronic responses. Such a property would be of great importance in the design of nanodevices for advanced photoelectric applications.
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61.43.Gt Powders, porous materials
68.55.ag Semiconductors
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes

Baek Hyun Kim, Robert F. Davis, Chang-Hee Cho, and Seong-Ju Park

Appl. Phys. Lett. 95, 153103 (2009); http://dx.doi.org/10.1063/1.3248025 (3 pages) | Cited 3 times

Online Publication Date: 12 October 2009

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We report the effect of injection current density on the electroluminescence (EL) from silicon quantum dot (QD) light-emitting diodes. The EL spectra as a function of injection current density were blueshifted and broad. These results are attributed to both the increase in the contribution of small Si QDs in the silicon nitride film due to the increase in the injection current density and the recombination of electron-hole pairs between excited states in the Si QDs due to band bending under high bias.
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85.60.Jb Light-emitting devices
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.63.Kv Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)

Structural instability of single wall carbon nanotube edges from first principles

M. Zubaer Hossain

Appl. Phys. Lett. 95, 153104 (2009); http://dx.doi.org/10.1063/1.3250159 (3 pages) | Cited 3 times

Online Publication Date: 13 October 2009

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Ab initio simulations are carried out to examine the origin of instability of edges in carbon nanotubes. It is found that the edge atoms with double dangling bonds (DDBs) in zigzag nanotubes move radially inward and arrange themselves in a structurally stable pentagonal configuration. This leads to a spontaneous partial closure of the edge ends. Conversely, edges containing single dangling bonds deform outward by a small amount. These structural changes occur due to the inherent structural instabilities, thus, are not initiated by thermodynamics. Besides, the inherent structural instability reduces the chemical activity of the atoms at the edge with DDBs.
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71.15.-m Methods of electronic structure calculations
71.20.Tx Fullerenes and related materials; intercalation compounds
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
64.70.K- Solid-solid transitions
81.07.De Nanotubes
73.22.-f Electronic structure of nanoscale materials and related systems

Organization of silicon nanocrystals by localized electrochemical etching

Asma Ayari-Kanoun, Dominique Drouin, Jacques Beauvais, Vladimir Lysenko, Tetyana Nychyporuk, and Abdelkader Souifi

Appl. Phys. Lett. 95, 153105 (2009); http://dx.doi.org/10.1063/1.3247884 (3 pages) | Cited 3 times

Online Publication Date: 13 October 2009

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An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam lithography and plasma etching. Then, a short electrochemical etching current pulse led to formation of a single Si nanocrystal per each nanohole. As a result, high quality silicon nanocrystal arrays were formed with well controlled and reproducible morphologies. In future, this approach can be used to fabricate single electron devices.
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81.16.Nd Micro- and nanolithography
82.45.Yz Nanostructured materials in electrochemistry
61.46.Hk Nanocrystals
52.77.Bn Etching and cleaning
81.65.Cf Surface cleaning, etching, patterning

Tuning the insulator to conductor transition in a multiwalled carbon nanotubes/epoxy composite at substatistical percolation threshold

Gabriella Faiella, Filomena Piscitelli, Marino Lavorgna, Vincenza Antonucci, and Michele Giordano

Appl. Phys. Lett. 95, 153106 (2009); http://dx.doi.org/10.1063/1.3242017 (3 pages) | Cited 7 times

Online Publication Date: 14 October 2009

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A fine tuning of the electrical conductivity from insulator to conductor behavior has been obtained for a multiwalled carbon nanotubes epoxy composite at a fixed substatistical percolation threshold content by varying the organization of the nanotubes network. A multiscale characterization has been carried out by transmission optical microscopy technique and small angle x-ray analysis that revealed a two level structure characterized by different topological arrangements for the micron sized clusters and nanosized isolated bundles, respectively. A picture of the multidimensional organization of the nanotubes network has been proposed to account for the observed transition modulation.
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72.60.+g Mixed conductivity and conductivity transitions
73.63.Fg Nanotubes
72.80.Tm Composite materials
61.48.De Structure of carbon nanotubes, boron nanotubes, and other related systems

Formation and coarsening of Ga droplets on focused-ion-beam irradiated GaAs surfaces

J. H. Wu, W. Ye, B. L. Cardozo, D. Saltzman, K. Sun, H. Sun, J. F. Mansfield, and R. S. Goldman

Appl. Phys. Lett. 95, 153107 (2009); http://dx.doi.org/10.1063/1.3229889 (3 pages) | Cited 8 times

Online Publication Date: 14 October 2009

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We have investigated the formation and coarsening of Ga droplets on focused-ion-beam (FIB) irradiated GaAs surfaces. To separately examine formation and coarsening, Ga droplets were fabricated by Ga+ FIB irradiation of GaAs substrates with and without pre-patterned holes. We determined the droplet growth rate and size distribution as a function of FIB energy following irradiation. The data suggest a droplet formation mechanism that involves Ga precipitation from a Ga-rich layer, followed by droplet coarsening via a combination of diffusion and Ostwald ripening or coalescence via droplet migration (dynamic coalescence).
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61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
66.30.H- Self-diffusion and ionic conduction in nonmetals
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Characterization of room temperature metal microbolometers near the metal-insulator transition regime for scanning thermal microscopy

Angelo Gaitas, Weibin Zhu, Ning Gulari, Elizabeth Covington, and Cagliyan Kurdak

Appl. Phys. Lett. 95, 153108 (2009); http://dx.doi.org/10.1063/1.3250434 (3 pages) | Cited 3 times

Online Publication Date: 16 October 2009

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Metal microbolometers, used in scanning thermal microscopy, were microfabricated from <20 nm titanium thin films on SiO2/Si3N4/SiO2 cantilevers. These thin films are near the metal-insulator transition regime such that as the film thickness decreases—the resistance increases and the current-voltage characteristics cross over from sublinear to superlinear. In addition, the temperature coefficient of resistance transitions from positive to negative before it plateaus at a negative value. Thin titanium films exhibit negative temperature coefficient of resistance as high as −0.0067/K which is higher than that of bulk titanium films.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
73.61.At Metal and metallic alloys
71.30.+h Metal-insulator transitions and other electronic transitions

Fabrication and gas sensing properties of In2O3 nanopushpins

Ahsanulhaq Qurashi, Toshinari Yamazaki, E. M. El-Maghraby, and Toshio Kikuta

Appl. Phys. Lett. 95, 153109 (2009); http://dx.doi.org/10.1063/1.3216052 (3 pages) | Cited 10 times

Online Publication Date: 16 October 2009

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The growth of nanopushpin-like In2O3 nanostructures was demonstrated on the silicon substrate by catalyst-free chemical vapor deposition method. Structural analysis revealed single-crystalline nature of the In2O3 nanopushpins with a cubic crystal structure. The hydrogen sensor made from the In2O3 nanopushpins showed swift response and excellent stability. The influence of operation temperature on the hydrogen gas sensing property of In2O3 nanostructures was also investigated. Our results reveal that the sensor response of In2O3 nanopushpins increases with increasing the operation temperature.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
82.80.-d Chemical analysis and related physical methods of analysis
85.35.-p Nanoelectronic devices

On-demand positioning of a preselected quantum emitter on a fiber-coupled toroidal microresonator

Markus Gregor, Rico Henze, Tim Schröder, and Oliver Benson

Appl. Phys. Lett. 95, 153110 (2009); http://dx.doi.org/10.1063/1.3243989 (3 pages) | Cited 8 times

Online Publication Date: 16 October 2009

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The coupling of a quantum emitter to the modes of a silica toroid is presented. A fiber taper is used to manipulate and transfer a preselected diamond nanocrystal onto the toroid. Optical coupling of few nitrogen vacancy (NV) color centers contained inside the nanocrystal to the resonator modes is demonstrated by detecting the fluorescence via a tapered optical fiber coupler. A clear antibunching in the photon correlation measurement is observed indicating emission from only six NV centers residing inside the nanocrystal. The latter is confirmed by a photoluminescence spectrum at liquid helium temperature resolving individual zero phonon lines.
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42.79.-e Optical elements, devices, and systems
42.50.Dv Quantum state engineering and measurements
61.72.jd Vacancies
61.72.jn Color centers
78.55.Hx Other solid inorganic materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
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