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12 Oct 2009

Volume 95, Issue 15, Articles (15xxxx)

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Appl. Phys. Lett. 95, 153101 (2009); http://dx.doi.org/10.1063/1.3244597 (3 pages)

Geunjae Kwak, Mikyung Lee, Karuppanan Senthil, and Kijung Yong
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Electric field-dependent charge transport in organic semiconductors

Ling Li, Steven Van Winckel, Jan Genoe, and Paul Heremans

Appl. Phys. Lett. 95, 153301 (2009); http://dx.doi.org/10.1063/1.3246160 (3 pages) | Cited 4 times

Online Publication Date: 13 October 2009

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An analytical description is elaborated for the variable range hopping conduction mechanism in the presence of temperature and electric fields for quasi-three-dimensional organic semiconductor systems. In the proposed description, it is assumed that the localized states are randomly distributed in energy and space coordinates. The expression for the hopping conductivity is obtained for the Gaussian density of states. The model is applied to the analysis of both temperature and electric field-dependent hopping transport in organic semiconductors. It is shown that the Poole–Frenkel behavior is only valid in medium electric field regime. Moreover, we conclude that the electric field determines whether the temperature dependence of conductivity in organic semiconductors obeys the Arrhenius law.
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72.20.Ht High-field and nonlinear effects
72.40.+w Photoconduction and photovoltaic effects
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Electric force microscopy imaging of charge accumulation and barrier lowering at Al/pentacene junction

Chaeho Kim and D. Jeon

Appl. Phys. Lett. 95, 153302 (2009); http://dx.doi.org/10.1063/1.3247891 (3 pages) | Cited 1 time

Online Publication Date: 13 October 2009

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We investigated the current-voltage and interface properties of the Al/pentacene/Au sandwiched sample. When the bias voltage was applied between Al and Au, a rectifying current-voltage curve was obtained as expected from the energy diagram. When measured in air, however, the forward current increased slowly to saturation even though the bias voltage was fixed. Cross-sectional electrostatic force microscopy of the interface suggested that a barrier lowering due to hole accumulation at the Al/pentacene junction was responsible.
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73.40.Ns Metal-nonmetal contacts
73.40.Ei Rectification
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Impact of dye interlayer on the performance of organic photovoltaic devices

S. L. Lai, M. F. Lo, M. Y. Chan, C. S. Lee, and S. T. Lee

Appl. Phys. Lett. 95, 153303 (2009); http://dx.doi.org/10.1063/1.3243991 (3 pages) | Cited 10 times

Online Publication Date: 13 October 2009

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The influences of buffer interlayer at the donor/acceptor interface on the open circuit voltage (VOC) of typical copper phthalocyanine (CuPc)/C60 organic photovoltaic devices are studied. Six fluorescent dyes with progressively increasing ionization potentials (IP) were used to investigate the factors influencing the VOC. The short-circuit current and fill factor of CuPc/C60 device incorporating dye interlayer are lower than those of standard bilayer device. On the other hand, the VOC increases linearly with the IP of dye material and falls off when the IP is equal to or greater than 5.6 eV, in which the energy offset between the highest occupied molecular orbitals at the interlayer/C60 heterojunction is smaller than the C60 exciton binding energy. The findings underscore the importance of energy offsets in photovoltaic responses.
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85.60.-q Optoelectronic devices
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.35.-y Excitons and related phenomena
72.40.+w Photoconduction and photovoltaic effects
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An inverted organic solar cell with an ultrathin Ca electron-transporting layer and MoO3 hole-transporting layer

D. W. Zhao, P. Liu, X. W. Sun, S. T. Tan, L. Ke, and A. K. K. Kyaw

Appl. Phys. Lett. 95, 153304 (2009); http://dx.doi.org/10.1063/1.3250176 (3 pages) | Cited 49 times

Online Publication Date: 16 October 2009

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An inverted organic solar cell based on poly(3-hexylthiophene) (P3HT) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 (PCBM) was fabricated with an ultrathin Ca electron-transporting layer and MoO3 hole-transporting layer. The 1 nm Ca on indium tin oxide (ITO) electrode modifies the work function of ITO suitable for electron extraction. An appropriate thickness of MoO3 hole extraction layer is also essential to effectively prevent exciton quenching at the Ag anode, yet not introduce much voltage loss and series resistance. The optical field distribution across the active layer was also simulated to discuss the effect of MoO3 thickness on the photocurrent. The maximum power conversion efficiency obtained was 3.55% under simulated 100 mW/cm2 (AM 1.5G) solar irradiation.
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88.40.jr Organic photovoltaics
72.40.+w Photoconduction and photovoltaic effects
88.40.H- Solar cells (photovoltaics)
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