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19 Oct 2009

Volume 95, Issue 16, Articles (16xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 162501 (2009); http://dx.doi.org/10.1063/1.3248257 (3 pages)

W. W. Lei, D. Liu, P. W. Zhu, X. H. Chen, Q. Zhao, G. H. Wen, Q. L. Cui, and G. T. Zou
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Electrode conformation-induced negative differential resistance and rectifying performance in a molecular device

X. Q. Deng, J. C. Zhou, Z. H. Zhang, H. Zhang, M. Qiu, and G. P. Tang

Appl. Phys. Lett. 95, 163109 (2009); http://dx.doi.org/10.1063/1.3246163 (3 pages) | Cited 11 times

Online Publication Date: 21 October 2009

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Carrying out theoretical calculations using the nonequilibrium Green’s function method combined with the density functional theory, the transport properties of a carbon wire connected to two Au electrodes are investigated. The results show that the negative differential resistance and rectifying performance can be observed apparently when a pure carbon chain is connected to two asymmetric Au electrodes. The main origin of the negative differential resistance behavior is a suppression of the highest occupied molecular orbital resonance at certain bias voltage. Also shown is that it is possible to make the negative differential resistance disappear and rectifying performance be weakened only by adding side groups to a wire.
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71.15.Mb Density functional theory, local density approximation, gradient and other corrections
02.30.-f Function theory, analysis

Manipulation of a one dimensional molecular assembly of helical superstructures by dielectrophoresis

Wakana Kubo and Shigenori Fujikawa

Appl. Phys. Lett. 95, 163110 (2009); http://dx.doi.org/10.1063/1.3253708 (3 pages) | Cited 1 time

Online Publication Date: 22 October 2009

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We demonstrate that it is possible to manipulate helical superstructures composed of self-assembled chiral lipids by dielectrophoresis while preserving the shape of the superstructures. Alignment and migration of the helical fibers were only observed for an applied ac field of 1 kHz–1 MHz. The structural and physical properties of the helical fibers were preserved even under ac electric fields. This is the first report on the manipulation of a helical molecular assembly wherein the original properties of the assembly remained unchanged even after manipulation.
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81.16.Dn Self-assembly
64.75.Yz Self-assembly
82.45.-h Electrochemistry and electrophoresis

On the hydrogen storage capacity of carbon nanotube bundles

Andre R. Muniz, M. Meyyappan, and Dimitrios Maroudas

Appl. Phys. Lett. 95, 163111 (2009); http://dx.doi.org/10.1063/1.3253711 (3 pages) | Cited 6 times

Online Publication Date: 22 October 2009

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An analytical model is presented to describe the effect of carbon nanotube (CNT) swelling upon hydrogenation on the hydrogen storage capacity of single-walled CNT bundles; the model is properly parameterized using atomistic calculations for the relationship between CNT swelling and the degree of hydrogenation as measured by the coverage of the CNTs by chemisorbed atomic H. The model generates experimentally testable hypotheses, which can be used to explain the lower H storage capacities reported for CNT bundles and the experimentally observed nonuniformity of hydrogenation of CNT bundles.
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68.43.Mn Adsorption kinetics
84.60.Ve Energy storage systems, including capacitor banks
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Large excess volume in grain boundaries of stressed, nanocrystalline metallic thin films: Its effect on grain-growth kinetics

Y. Kuru, M. Wohlschlögel, U. Welzel, and E. J. Mittemeijer

Appl. Phys. Lett. 95, 163112 (2009); http://dx.doi.org/10.1063/1.3248070 (3 pages) | Cited 7 times

Online Publication Date: 22 October 2009

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The excess volumes per unit grain-boundary area of nanocrystalline Pd and Ni thin films were measured by an efficacious method based on real time in situ x-ray diffraction measurements. The obtained large values for the grain-boundary excess volume reveal the background of surprising, yet unexplained observations of grain growth in nanocrystalline materials.
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61.72.Mm Grain and twin boundaries
68.55.jd Thickness

Gigahertz breathing oscillators based on carbon nanoscrolls

Xinghua Shi, Nicola M. Pugno, Yuan Cheng, and Huajian Gao

Appl. Phys. Lett. 95, 163113 (2009); http://dx.doi.org/10.1063/1.3253423 (3 pages) | Cited 12 times

Online Publication Date: 22 October 2009

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Theoretical study and molecular dynamics simulations are performed to investigate the gigahertz “breathing” oscillatory motion of a carbon nanoscroll (CNS). It is shown that the oscillation frequency depends on surface energy, bending stiffness, interlayer spacing, and length of the basal graphene sheet of the CNS, and that energy dissipation in the system can be controlled by adjusting temperature, graphene length, and surface energy. The analysis indicates potential applications of CNS in nanomechanical devices such as nanooscillators, nanoactuators, as well as drug and gene delivery systems.
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87.85.Qr Nanotechnologies-design
81.05.ub Fullerenes and related materials
81.05.U- Carbon/carbon-based materials
61.46.-w Structure of nanoscale materials
68.35.Md Surface thermodynamics, surface energies
84.30.Ng Oscillators, pulse generators, and function generators

Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation

V. D. Dasika, J. D. Song, W. J. Choi, N. K. Cho, J. I. Lee, and R. S. Goldman

Appl. Phys. Lett. 95, 163114 (2009); http://dx.doi.org/10.1063/1.3243688 (3 pages) | Cited 7 times

Online Publication Date: 22 October 2009

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We have investigated the influence of alloy buffer and capping layers on the shape, size, and density of self-assembled InAs/GaAs quantum dots. Cross-sectional scanning tunneling microscopy (XSTM) images reveal ellipse-shaped dots with highest (lowest) diameter, height, and density, for dots with (without) surrounding alloy layers. Furthermore, the wetting layer is thicker in the presence of the alloy layers. We propose a strain-based mechanism for dot formation and collapse in the absence and presence of alloy buffer and capping layers. This mechanism is likely to be applicable to a wide range of lattice-mismatched thin-film systems.
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68.65.Hb Quantum dots (patterned in quantum wells)
81.05.Ea III-V semiconductors
81.07.Ta Quantum dots

Enhanced three-photon absorption and nonlinear refraction in ZnS and Mn2+ doped ZnS quantum dots

M. Chattopadhyay, P. Kumbhakar, R. Sarkar, and A. K. Mitra

Appl. Phys. Lett. 95, 163115 (2009); http://dx.doi.org/10.1063/1.3254186 (3 pages) | Cited 12 times

Online Publication Date: 23 October 2009

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Enhanced three-photon absorption (3PA) and self-focusing nonlinear refraction are reported for the first time in ZnS and (1%–2.5%) Mn2+ doped ZnS quantum dots (QDs) of average size of 1.5 nm by using z-scan technique at 532 nm laser radiations. At this wavelength, the obtained maximum value of the 3PA coefficient both in the ZnS and in the doped ZnS QDs is ∼ 107 times that of bulk ZnS. Also intensity dependent saturation of 3PA has been observed and the characteristic saturation intensity is estimated to be 0.85±0.09 GW/cm2 for ZnS QDs.
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78.67.Hc Quantum dots
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
61.72.uj III-V and II-VI semiconductors
81.07.Ta Quantum dots

10 μm minority-carrier diffusion lengths in Si wires synthesized by Cu-catalyzed vapor-liquid-solid growth

Morgan C. Putnam, Daniel B. Turner-Evans, Michael D. Kelzenberg, Shannon W. Boettcher, Nathan S. Lewis, and Harry A. Atwater

Appl. Phys. Lett. 95, 163116 (2009); http://dx.doi.org/10.1063/1.3247969 (3 pages) | Cited 28 times

Online Publication Date: 23 October 2009

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The effective electron minority-carrier diffusion length, Ln,eff, for 2.0 μm diameter Si wires that were synthesized by Cu-catalyzed vapor-liquid-solid growth was measured by scanning photocurrent microscopy. In dark, ambient conditions, Ln,eff was limited by surface recombination to a value of ≤ 0.7 μm. However, a value of Ln,eff = 10.5±1 μm was measured under broad-area illumination in low-level injection. The relatively long minority-carrier diffusion length observed under illumination is consistent with an increased surface passivation resulting from filling of the surface states of the Si wires by photogenerated carriers. These relatively large Ln,eff values have important implications for the design of high-efficiency, radial-junction photovoltaic cells from arrays of Si wires synthesized by metal-catalyzed growth processes.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.20.At Surface states, band structure, electron density of states
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Vertical hybrid microcavity based on a polymer layer sandwiched between porous silicon photonic crystals

F. Yu. Sychev, I. E. Razdolski, T. V. Murzina, O. A. Aktsipetrov, T. Trifonov, and S. Cheylan

Appl. Phys. Lett. 95, 163301 (2009); http://dx.doi.org/10.1063/1.3245319 (3 pages) | Cited 4 times

Online Publication Date: 19 October 2009

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A vertical hybrid microcavity is fabricated by sandwiching a polymer layer between distributed Bragg reflectors (DBRs) composed of porous silicon photonic crystals. The DBRs are made by electrochemical etching of Si and consist of alternating porous Si layers of high and low porosity, the top DBR being a freestanding film. The hybrid microcavity demonstrates a deep microcavity mode placed within a 200 nm wide photonic band gap, and reveals a many-fold enhancement of the third-order nonlinearity of the microcavity layer. The fabrication technique employed is rather simple, enabling the use of a variety of functional materials as the microcavity spacer.
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42.70.Qs Photonic bandgap materials
42.86.+b Optical workshop techniques
81.65.Cf Surface cleaning, etching, patterning
42.70.Jk Polymers and organics
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Practical efficiency limits in organic photovoltaic cells: Functional dependence of fill factor and external quantum efficiency

Jonathan D. Servaites, Mark A. Ratner, and Tobin J. Marks

Appl. Phys. Lett. 95, 163302 (2009); http://dx.doi.org/10.1063/1.3243986 (3 pages) | Cited 23 times

Online Publication Date: 19 October 2009

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We evaluate practical power conversion efficiency limits (ηlim) in bulk-heterojunction organic photovoltaic (BHJ OPV) cells and how the field dependence of exciton dissociation affects cell efficiencies. We treat the fill factor limit as a function of the donor-acceptor lowest unoccupied molecular orbital offset energy (ELLO), calculating how this limit varies with decreasing ELLO. We also evaluate OPV external quantum efficiency as a function of wavelength from the optical transmittance and internal quantum efficiency limitations. For a given ELLO, we numerically optimize donor bandgap and ηlim and show that ηlim>10% should be possible for hypothetical OPV systems generating free charge carriers efficiently at ELLO ∼ 0.3–0.4 eV. Current BHJ OPVs with low ELLO values appear to be limited to cell efficiencies of ∼ 5% largely as a consequence of incomplete exciton dissociation.
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84.60.Jt Photoelectric conversion
71.35.-y Excitons and related phenomena
71.55.-i Impurity and defect levels
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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Performance improvement in transparent organic thin-film transistors with indium tin oxide/fullerene source/drain contact

Yu-Chang Li, Yu-Ju Lin, Chia-Yu Wei, Zheng-Xian Lin, Ten-Chin Wen, Mei-Ying Chang, Cheng-Liang Tsai, and Yeong-Her Wang

Appl. Phys. Lett. 95, 163303 (2009); http://dx.doi.org/10.1063/1.3240893 (3 pages) | Cited 4 times

Online Publication Date: 20 October 2009

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With the use of fullerene (C60)/indium tin oxide (ITO) source/drain electrode, the performance of a transparent thin-film transistor could be enhanced dramatically. The drain current can be increased by a factor of more than 5. The improvements are attributed to the reduction of the injection barrier at the ITO/pentacene interface, which can be confirmed by the work function measured at the ITO/C60 and the contact resistance obtained by transmission line method. Meanwhile, the average transmittance in the visible region with a 3.5 nm C60 buffer layer for 65-nm-thick pentacene organic thin film transistors remains at 62.98%.
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85.30.Tv Field effect devices
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Even-odd parity oscillations in spin polarization of a quantum dot array

Xing-Tao An and Jian-Jun Liu

Appl. Phys. Lett. 95, 163501 (2009); http://dx.doi.org/10.1063/1.3250433 (3 pages) | Cited 4 times

Online Publication Date: 19 October 2009

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We propose a quantum dot (QD) array device which contains a bridge coupling between two leads. Due to the quantum interference and the Rashba spin-orbit interaction, the spin of the electrons through the device is polarized. Moreover, we find odd-even parity oscillations of spin polarization of the electrons through the system. We study the spin accumulations in every QD and find that there is difference between the spin accumulations of the QDs directly and indirectly coupling to leads. These results demonstrate that the bridge coupling is a flexible and feasible way to manipulate the electron spin of the QD array.
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85.35.Ds Quantum interference devices
73.63.Kv Quantum dots
73.21.La Quantum dots
73.23.-b Electronic transport in mesoscopic systems
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Mechanism of carrier injection in (Ni/Au)/p-AlxGa1−xN:Mg(0 ≤ x<0.1) Ohmic contacts

S. Nikishin, I. Chary, B. Borisov, V. Kuryatkov, Yu. Kudryavtsev, R. Asomoza, S. Yu. Karpov, and M. Holtz

Appl. Phys. Lett. 95, 163502 (2009); http://dx.doi.org/10.1063/1.3242420 (3 pages) | Cited 1 time

Online Publication Date: 19 October 2009

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We report the mechanism of current injection in (Ni/Au)/p-AlxGa1−xN:Mg(0 ≤ x<0.1) Ohmic contacts based on the temperature dependence of hole concentrations (p) and specific contact resistance (ρc). The injection mechanism is found to be thermionic emission in all cases. A model is developed to describe the temperature dependences of p and ρc for Mg concentrations from 1019 to 1020 cm−3. The model takes into account splitting in the valence band structure, hole activation energy, and Schottky barrier height. For GaN (AlGaN) these are found to be 132–140 (135–150) meV and 66–88 (84–93) meV, respectively.
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73.40.Ns Metal-nonmetal contacts
72.20.-i Conductivity phenomena in semiconductors and insulators
79.40.+z Thermionic emission
73.40.Cg Contact resistance, contact potential
73.20.At Surface states, band structure, electron density of states
81.05.Bx Metals, semimetals, and alloys
81.05.Ea III-V semiconductors

Magnetic tunnel junction on a ferroelectric substrate

N. A. Pertsev and H. Kohlstedt

Appl. Phys. Lett. 95, 163503 (2009); http://dx.doi.org/10.1063/1.3253706 (3 pages) | Cited 17 times

Online Publication Date: 23 October 2009

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The concept of a magnetic tunnel junction fabricated on a ferroelectric substrate is described theoretically. It is shown that the application of a moderate electric field to a substrate having strong piezoelectric response may induce an in-plane magnetization rotation in a ferromagnetic electrode made of a highly magnetostrictive cubic material with small magnetocrystalline anisotropy. Remarkably, an abrupt change of the junction’s electrical resistance can result from the substrate-induced magnetization reorientation in the free ferromagnetic layer. Hence the described hybrid multiferroic device may be employed as an electric-write nonvolatile magnetic memory cell with nondestructive readout.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
85.75.Dd Magnetic memory using magnetic tunnel junctions
75.30.Gw Magnetic anisotropy
75.80.+q Magnetomechanical effects, magnetostriction
77.80.-e Ferroelectricity and antiferroelectricity

Efficiency droop behavior of direct current aged GaN-based blue light-emitting diodes

Xianjie Shao, Hai Lu, Dunjun Chen, Zili Xie, Rong Zhang, and Youdou Zheng

Appl. Phys. Lett. 95, 163504 (2009); http://dx.doi.org/10.1063/1.3254237 (3 pages) | Cited 5 times

Online Publication Date: 23 October 2009

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By direct current (dc) stressing, GaN-based blue light-emitting diodes (LEDs) with different density of nonradiative recombination centers in the active region of InGaN/GaN multiple quantum wells were obtained and studied for injection-current-induced efficiency droop. It is found that with increasing stressing time, the overall quantum efficiency of the aged LEDs drops while the peak-efficiency-current shifts toward higher magnitude. At selected injection current levels, the electroluminescence spectra of the aged LEDs show little change in peak position and shape. The shift in peak-efficiency-current, which follows the same trend as the degree of luminescence decay, is explained by a rate-equation model in which the newly created defects by dc stressing enlarge the dominant low-current region of nonradiative recombinations.
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85.60.Jb Light-emitting devices
81.07.St Quantum wells
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Remediation of Cr(VI) by biogenic magnetic nanoparticles: An x-ray magnetic circular dichroism study

N. D. Telling, V. S. Coker, R. S. Cutting, G. van der Laan, C. I. Pearce, R. A. D. Pattrick, E. Arenholz, and J. R. Lloyd

Appl. Phys. Lett. 95, 163701 (2009); http://dx.doi.org/10.1063/1.3249578 (3 pages) | Cited 8 times

Online Publication Date: 21 October 2009

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Biologically synthesized magnetite (Fe3O4) nanoparticles are studied using x-ray absorption and x-ray magnetic circular dichroism following exposure to hexavalent Cr solution. By examining their magnetic state, Cr cations are shown to exist in trivalent form on octahedral sites within the magnetite spinel surface. The possibility of reducing toxic Cr(VI) into a stable, nontoxic form, such as a Cr3+-spinel layer, makes biogenic magnetite nanoparticles an attractive candidate for Cr remediation.
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87.85.Rs Nanotechnologies-applications
78.70.Dm X-ray absorption spectra
78.20.Ls Magneto-optical effects
81.16.Fg Supramolecular and biochemical assembly
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
75.50.Tt Fine-particle systems; nanocrystalline materials

A versatile liquid-core/liquid-twin-cladding waveguide micro flow cell fabricated by rapid prototyping

M. Rosenauer and M. J. Vellekoop

Appl. Phys. Lett. 95, 163702 (2009); http://dx.doi.org/10.1063/1.3249771 (3 pages) | Cited 4 times

Online Publication Date: 21 October 2009

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In this paper we present the design and operation of a micro flow cell comprising a liquid-core/liquid-twin-cladding waveguide for on-chip fluorescence spectroscopy based on evanescent field illumination. The application of an inner (sample) and outer cladding stream minimizes the sample volume for optical measurements and ensures the analyte position in the evanescent field for excitation at the core/cladding interface. The fiber-chip-coupled laser light is guided by the fluidic waveguide providing a uniform excitation along the analysis channel. Fluorescence intensity measurements of different sample solutions were conducted to illustrate the operational quality. The fluidics device is fabricated by laser microstereolithography in 1.5 h.
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87.80.Ek Mechanical and micromechanical techniques
87.64.kv Fluorescence
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
42.79.Gn Optical waveguides and couplers
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Identification and lattice location of oxygen impurities in α-Si3N4

J. C. Idrobo, M. P. Oxley, W. Walkosz, R. F. Klie, S. Öğüt, B. Mikijelj, S. J. Pennycook, and S. T. Pantelides

Appl. Phys. Lett. 95, 164101 (2009); http://dx.doi.org/10.1063/1.3250922 (3 pages) | Cited 4 times

Online Publication Date: 21 October 2009

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For over 40 years impurities have been believed to stabilize the ceramic α-Si3N4 but there is no direct evidence for their identity or lattice location. In bulk materials electron microscopy can generally image heavy impurities. Here we report direct imaging of N columns in α-Si3N4 that suggests the presence of excess light elements in specific N columns. First-principles calculations rule out Si or N interstitials and suggest O impurities, which are then confirmed by atomically resolved electron-energy-loss spectroscopy. The result provides a possible explanation for the stability of α-Si3N4 with implications for the design of next-generation structural ceramics.
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61.72.jj Interstitials
79.20.Uv Electron energy loss spectroscopy

Generation and manipulation of droplets in an optoelectrofluidic device integrated with microfluidic channels

Do-Hyun Lee, Hyundoo Hwang, and Je-Kyun Park

Appl. Phys. Lett. 95, 164102 (2009); http://dx.doi.org/10.1063/1.3253411 (3 pages) | Cited 5 times

Online Publication Date: 21 October 2009

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This letter describes an optoelectrofluidic platform integrated with microfluidic channels for continuous generation and programmable manipulation of water-in-oil droplet emulsions. A microchannel was integrated into a film-based optoelectrofluidic device by selective perforation of poly(dimethylsiloxane) layer for simultaneously performing microfluidic generation and optoelectrofluidic manipulation of droplets in a single device. By using this device, we could continuously generate, interactively transport, and merge multiple droplets using optically induced virtual electrodes.
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47.85.Np Fluidics
47.60.Dx Flows in ducts and channels
47.57.Bc Foams and emulsions
47.55.D- Drops and bubbles

Strain-induced microstructural evolution in epitaxial Fe/MgO layers grown on InxGa1−xAs(001) substrates

Kyung-ho Kim, Hyung-jun Kim, Gyeung-Ho Kim, Joonyeon Chang, and Suk-hee Han

Appl. Phys. Lett. 95, 164103 (2009); http://dx.doi.org/10.1063/1.3231075 (3 pages) | Cited 4 times

Online Publication Date: 22 October 2009

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Epitaxial Fe/MgO layers have been grown on InxGa1−xAs substrates to examine the epitaxial relationship and the morphological variation with respect to indium content, x and the growth temperature of MgO interlayer. The in-plane epitaxial relationship of Fe[010]//MgO[1math0]//InxGa1−xAs[1math0] is found in the structures of all x values for 4 nm thick MgO layers grown at room temperature. Epitaxial MgO interlayers grow in two-dimensional layer regardless of x while the morphology of subsequent Fe changes from two-dimensional layer to three-dimensional islands with the increase of x. Furthermore, the average size of Fe islands becomes smaller at higher x value due to enhanced underlying strain. The elevated growth temperature of MgO has led to partial strain relaxation, resulting in the suppression of three-dimensional Fe island formation.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
75.50.Bb Fe and its alloys
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Erratum: “Linear optical protocol for preparation of N-photon Greenberger–Horne–Zeilinger state with conventional photon detectors” [ Appl. Phys. Lett. 92, 021127 (2008) ]

Yan Xia, Jie Song, and He-Shan Song

Appl. Phys. Lett. 95, 169901 (2009); http://dx.doi.org/10.1063/1.3246797 (1 page)

Online Publication Date: 19 October 2009

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Abstract Unavailable
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99.10.Cd Errata
42.50.Dv Quantum state engineering and measurements
85.60.Gz Photodetectors (including infrared and CCD detectors)
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
03.67.Hk Quantum communication
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Publisher's Note: “Large magnetic-field-induced strains in Ni–Mn–Ga nonmodulated martensite” [Appl. Phys. Lett. 95, 104103 (2009)]

V. A. Chernenko, M. Chmielus, and P. Müllner

Appl. Phys. Lett. 95, 169902 (2009); http://dx.doi.org/10.1063/1.3253573 (1 page) | Cited 1 time

Online Publication Date: 22 October 2009

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Abstract Unavailable
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71.20.Tx Fullerenes and related materials; intercalation compounds
61.72.up Other materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.43.Mn Adsorption kinetics
71.15.Dx Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction)
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
73.61.Wp Fullerenes and related materials
72.80.Rj Fullerenes and related materials
99.10.Cd Errata
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