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19 Oct 2009

Volume 95, Issue 16, Articles (16xxxx)

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Appl. Phys. Lett. 95, 162501 (2009); http://dx.doi.org/10.1063/1.3248257 (3 pages)

W. W. Lei, D. Liu, P. W. Zhu, X. H. Chen, Q. Zhao, G. H. Wen, Q. L. Cui, and G. T. Zou
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Growth and properties of chemical solution deposited BiInO3–PbTiO3 films

S. W. Ko, H. G. Yeo, and S. Trolier-McKinstry

Appl. Phys. Lett. 95, 162901 (2009); http://dx.doi.org/10.1063/1.3250165 (3 pages) | Cited 3 times

Online Publication Date: 19 October 2009

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The dielectric, ferroelectric, and piezoelectric properties of chemical solution deposited xBiInO3–(1−x)PbTiO3 (0.10 ≤ x ≤ 0.35) thin films on platinized silicon substrates were investigated. Using a PbTiO3 seed layer, phase pure xBiInO3–(1−x)PbTiO3 (0.10 ≤ x ≤ 0.35) thin films were prepared. For a 470 nm thick 0.15BiInO3–0.85PbTiO3 film, the room temperature permittivity was 650, while the dielectric loss tangent was below 2%. The coercive field and remanent polarization were 73 kV/cm and 22 μC/cm2, respectively. The ferroelectric transition temperatures of the xBiInO3–(1−x)PbTiO3 (x = 0.10–0.20) films were all in excess of 550 °C. For x = 0.15, the e31,f piezoelectric coefficient was −2.7 C/m2.
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77.55.-g Dielectric thin films
77.80.B- Phase transitions and Curie point
77.22.Ch Permittivity (dielectric function)
77.65.Bn Piezoelectric and electrostrictive constants
77.22.Gm Dielectric loss and relaxation
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Reliability properties of metal-oxide-semiconductor capacitors using LaAlO3 high-k dielectric

Lingyen Yeh, Ingram Yin-Ku Chang, Chun-Heng Chen, and Joseph Ya-Min Lee

Appl. Phys. Lett. 95, 162902 (2009); http://dx.doi.org/10.1063/1.3250242 (3 pages)

Online Publication Date: 19 October 2009

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In this study, metal-oxide-semiconductor (MOS) capacitors with high dielectric constant LaAlO3 film were fabricated. Furthermore, the characteristic time-to-breakdown, TBD, of the MOS capacitors was investigated. The TBD was measured and the corresponding Weibull slopes, β, of the MOS capacitors with various LaAlO3 thicknesses were calculated. In addition, a modified percolation model was proposed to consider the extrinsic factors of breakdown. These extrinsic factors were described by an equivalent reduction of the path-to-breakdown, tex, in the model. Using this model, the calculated tex of the MOS capacitor was 5.8 nm.
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84.32.Tt Capacitors
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Influence of dc-bias on phase stability in Mn-doped Na0.5Bi0.5TiO3-5.6 at. %BaTiO3 single crystals

Wenwei Ge, Hu Cao, Jiefang Li, D. Viehland, Qinhui Zhang, and Haosu Luo

Appl. Phys. Lett. 95, 162903 (2009); http://dx.doi.org/10.1063/1.3253412 (3 pages) | Cited 16 times

Online Publication Date: 20 October 2009

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Mn-doped Na0.5Bi0.5TiO3-5.6 at. %BaTiO3 (Mn:NBT-5.6%BT) single crystals were grown by a top-seeded solution growth method. Tetragonal and rhombohedral phases were found to coexist in the as-grown condition. The dielectric and structural properties were studied as a function of temperature under dc electrical bias. An induced phase stability change from rhombohedral to tetragonal phases occurred under an electric-field applied along the 〈001〉 direction.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
81.10.Dn Growth from solutions
61.72.up Other materials
77.22.Ch Permittivity (dielectric function)
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