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19 Oct 2009

Volume 95, Issue 16, Articles (16xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 162501 (2009); http://dx.doi.org/10.1063/1.3248257 (3 pages)

W. W. Lei, D. Liu, P. W. Zhu, X. H. Chen, Q. Zhao, G. H. Wen, Q. L. Cui, and G. T. Zou
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Correlating dopant distributions and electrical properties of boron-doped silicon nanowires

Ruth A. Schlitz, Daniel E. Perea, Jessica L. Lensch-Falk, Eric R. Hemesath, and Lincoln J. Lauhon

Appl. Phys. Lett. 95, 162101 (2009); http://dx.doi.org/10.1063/1.3250431 (3 pages) | Cited 20 times

Online Publication Date: 19 October 2009

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Quantitative nonuniform radial doping profiles in vapor liquid solid grown boron-doped silicon nanowires are correlated with axial variations in electrical properties. Boron concentrations measured by atom probe tomography are lower for the core material grown from a gold catalyst than for material deposited on the nanowire surface. Transistors fabricated along a single nanowire exhibit a transition from nonlinear contact-dominated behavior to linear behavior with increasing thickness of the dopant-enriched surface layer. Simple models confirm that the surface is doped to a level that enables the contact resistance to become comparable to the channel resistance, suggesting that unintentional surface doping may play a role in lowering contact resistances in some nanowire devices.
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61.72.uf Ge and Si
85.30.Tv Field effect devices
85.35.-p Nanoelectronic devices
73.63.-b Electronic transport in nanoscale materials and structures
81.16.-c Methods of micro- and nanofabrication and processing
73.40.Cg Contact resistance, contact potential

n-type β-FeSi2/intrinsic-Si/p-type Si heterojunction photodiodes for near-infrared light detection at room temperature

Mahmoud Shaban, Shota Izumi, Keita Nomoto, and Tsuyoshi Yoshitake

Appl. Phys. Lett. 95, 162102 (2009); http://dx.doi.org/10.1063/1.3250171 (3 pages) | Cited 8 times

Online Publication Date: 20 October 2009

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n-Type β-FeSi2/intrinsic-Si/p-type Si heterojunctions, prepared by facing-targets direct-current sputtering, were evaluated as near-infrared photodetectors. The built-in potential was estimated to be approximately 1 V from capacitance-voltage characteristics. Diodes with a junction area of 0.03 mm2 exhibited a junction capacitance of 4.4 pF at zero bias. At room temperature, the devices exhibited responsivity of 140 mA/W and external quantum efficiency of 13% at a bias voltage of −5 V. The detectivity at zero bias was estimated to be 2.8×109 cm√Hz/W at the wavelength of 1.31 μm. These results indicate their high application potential as near-infrared photodiodes integrated with Si.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.Dw Photodiodes; phototransistors; photoresistors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Dynamics of free carrier absorption in InN layers

S. Nargelas, R. Aleksiejūnas, M. Vengris, T. Malinauskas, K. Jarašiūnas, and E. Dimakis

Appl. Phys. Lett. 95, 162103 (2009); http://dx.doi.org/10.1063/1.3251077 (3 pages) | Cited 2 times

Online Publication Date: 20 October 2009

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Carrier dynamics in highly excited InN epitaxial layers was investigated in the 1550–2440 nm (0.8–0.51 eV) spectral range by using a femtosecond differential transmission technique. A transition from induced bleaching to induced absorption was observed for probing energy of 90 meV below the bandgap of the samples. The decay of the induced free carrier absorption provided the averaged lifetime of the total nonequilibrium carriers. In the carrier density range of Δn = 1018–1020 cm−3, the density-dependent recombination mechanism was attributed to trap-assisted Auger recombination with decay rate 1/τ = BTAARΔn, with BTAAR in the range (4–30)×10−10 cm3 s−1 for layers with different defect densities.
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68.55.ag Semiconductors
71.20.Nr Semiconductor compounds
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.55.Eq III-V semiconductors
79.20.Fv Electron impact: Auger emission

Band offsets of HfO2/ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation

Q. Chen, M. Yang, Y. P. Feng, J. W. Chai, Z. Zhang, J. S. Pan, and S. J. Wang

Appl. Phys. Lett. 95, 162104 (2009); http://dx.doi.org/10.1063/1.3253420 (3 pages) | Cited 4 times

Online Publication Date: 20 October 2009

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High quality HfO2 dielectrics have been grown on ZnO (0001) substrates. The valence- and conduction-band offsets for HfO2/ZnO (0001) heterojunctions have been determined to be 0.14±0.05 and 2.29±0.05 eV, respectively, by using in situ x-ray photoemission spectroscopy. First-principles calculations show that the valence-band offset at the HfO2/ZnO (0001) interface of the most energetically favorable interface structure is 0.40 eV, which is consistent with the experimental results.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
77.55.-g Dielectric thin films
68.35.Ct Interface structure and roughness
73.20.At Surface states, band structure, electron density of states
79.60.Jv Interfaces; heterostructures; nanostructures
71.15.-m Methods of electronic structure calculations

Electrical resistance switching in Ti added amorphous SiOx

Ting-Yi Lin (林庭誼), Li-Ming Chen (陳力銘), Shih-Ching Chang (張士欽), and Tsung-Shune Chin (金重勳)

Appl. Phys. Lett. 95, 162105 (2009); http://dx.doi.org/10.1063/1.3243983 (3 pages) | Cited 2 times

Online Publication Date: 20 October 2009

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Unipolar switching in electrical resistivity is demonstrated in Ti-doped amorphous SiOx with suitable electrodes. We studied stacks of Al(30 nm)/SiOx/Pt, Cu/SiOx/Pt, Cu/Al(2 nm)/SiOx/Pt, and Pt/SiOx/TiN grown on Ti/SiO2/Si(100) wafer to investigate the effect of metal electrodes. The nature of interface oxides between top electrodes and SiOx, as elucidated by x-ray photoelectron and Auger-electron spectra, was found to manifestly influence switching-ability. A 30 nm Al top electrode leads to thick interfacial Al2O3, which frustrates resistivity switching, while an ultrathin Al between Cu and SiOx alleviates this problem. The Pt/SiOx/TiN stack, designed to avoid interface oxides, is the best showing narrower distribution in operation voltage and cycling more than 500 times.
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73.40.Rw Metal-insulator-metal structures
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.60.+g Mixed conductivity and conductivity transitions

Microwave magnetoabsorption in two-dimensional electron systems

Jesús Iñarrea and Gloria Platero

Appl. Phys. Lett. 95, 162106 (2009); http://dx.doi.org/10.1063/1.3254231 (3 pages) | Cited 1 time

Online Publication Date: 21 October 2009

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Magnetoabsorption, microwave-induced resistance oscillations, and zero resistance states in two-dimensional systems are calculated in the framework of the same theory: the microwave driven Larmor orbit model. On one hand, this theory allows to obtain resistance oscillations with multiple peaks, depending on the microwave frequency. On the other hand, it also permits to calculate the microwave magnetoabsorption yielding only one broad peak at the cyclotron resonance condition.
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78.20.Ls Magneto-optical effects
76.40.+b Diamagnetic and cyclotron resonances
78.70.Gq Microwave and radio-frequency interactions

Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films

Morito Akiyama, Kazuhiko Kano, and Akihiko Teshigahara

Appl. Phys. Lett. 95, 162107 (2009); http://dx.doi.org/10.1063/1.3251072 (3 pages) | Cited 8 times

Online Publication Date: 21 October 2009

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The authors have investigated the influence of growth temperature and scandium concentration on the piezoelectric response of scandium aluminum nitride (ScxAl1−xN) films prepared by dual reactive cosputtering. The piezoelectric response strongly depends on the growth temperature and scandium concentration. The piezoelectric response of the films prepared at 400 °C gradually increases with increasing scandium concentration. On the other hand, the piezoelectric response of the films prepared at 580 °C drastically decreases and increases in the scandium concentration from 30% to 40%. We think that the drastic change of the piezoelectric response is due to the disordered grain growth.
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77.55.-g Dielectric thin films
81.15.Cd Deposition by sputtering
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

Hu Young Jeong, Jeong Yong Lee, Sung-Yool Choi, and Jeong Won Kim

Appl. Phys. Lett. 95, 162108 (2009); http://dx.doi.org/10.1063/1.3251784 (3 pages) | Cited 30 times

Online Publication Date: 21 October 2009

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We report a direct observation of the microscopic origin of the bipolar resistive switching behavior in nanoscale titanium oxide films. Through a high-resolution transmission electron microscopy, an analytical transmission electron microscopy technique using energy-filtering transmission electron microscopy, and an in situ x-ray photoelectron spectroscopy, we demonstrated that the oxygen ions piled up at the top interface by an oxidation-reduction between the titanium oxide layer and the top Al metal electrode. We also found that the drift of oxygen ions during the on/off switching induced the bipolar resistive switching in the titanium oxide thin films.
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68.55.-a Thin film structure and morphology
68.37.Og High-resolution transmission electron microscopy (HRTEM)
79.60.Jv Interfaces; heterostructures; nanostructures
61.72.jd Vacancies

First-principles study of the electronic properties of Ge dangling bonds at (100)Si1−xGex/SiO2 interfaces

M. Houssa, V. V. Afanas’ev, A. Stesmans, G. Pourtois, M. Meuris, and M. M. Heyns

Appl. Phys. Lett. 95, 162109 (2009); http://dx.doi.org/10.1063/1.3253707 (3 pages) | Cited 5 times

Online Publication Date: 22 October 2009

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First-principles calculations of the electronic properties of (100)Si1−xGex/SiO2 structures, with a Ge dangling bond at the interface, are reported. It is found that the defect level associated with this dangling bond approaches the valence band edge of the Si1−xGex substrate as the Si concentration is reduced, mainly due to the narrowing of the energy bandgap of the alloy. These results suggest that these dangling bonds likely behave as acceptor-type defects at Ge-rich (100)Si1−xGex interfaces.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
71.55.-i Impurity and defect levels
81.05.Hd Other semiconductors
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Enhancement of thermoelectric efficiency in oxygen-deficient Sr1−xLaxTiO3−δ ceramics

J. Liu, C. L. Wang, W. B. Su, H. C. Wang, P. Zheng, J. C. Li, J. L. Zhang, and L. M. Mei

Appl. Phys. Lett. 95, 162110 (2009); http://dx.doi.org/10.1063/1.3254219 (3 pages) | Cited 14 times

Online Publication Date: 23 October 2009

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We report that the Seebeck coefficient (S) is remarkably enhanced in oxygen-deficient Sr1−xLaxTiO3−δ ceramics. The S values of all oxygen-deficient samples are larger than those of the near-stoichiometric ones and are temperature-independent at high temperatures, showing a narrow band behavior. This indicates that the introduction of oxygen vacancy changes the density of electronic states around the Fermi energy. The maximum for the figure of merit (ZT) of Sr0.9La0.1TiO3−δ ceramic reaches 0.21 at about 750 K, demonstrating enhancement by a factor of more than 1.3 over that of the near-stoichiometric materials.
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72.20.Pa Thermoelectric and thermomagnetic effects
72.80.Sk Insulators
71.20.Nr Semiconductor compounds
61.72.jd Vacancies

Blueshift of intersubband transition wavelength in AlN/GaN multiple quantum wells by low temperature metal organic vapor phase epitaxy using pulse injection method

Jung-Seung Yang, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano, and Yukihiro Shimogaki

Appl. Phys. Lett. 95, 162111 (2009); http://dx.doi.org/10.1063/1.3254230 (3 pages) | Cited 8 times

Online Publication Date: 23 October 2009

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AlN/GaN multiquantum wells (MQWs) were grown at different growth temperatures via a metal organic vapor phase epitaxy (MOVPE) system using a pulse injection method and their intersubband transition (ISBT) properties were investigated. Strong ISBT at 1.58 μm measured at room temperature was realized with MQWs grown at 770 °C and its absorption properties was the best reported in MOVPE system using GaN buffer layer. Clear blueshift of ISB absorption wavelength by lowering growth temperature was observed, which suggests that interdiffusion within MQWs was suppressed at lower growth temperatures.
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73.21.Fg Quantum wells
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.ag Semiconductors
78.30.Fs III-V and II-VI semiconductors
78.67.De Quantum wells
66.30.Ny Chemical interdiffusion; diffusion barriers

High-gain photoconductivity in semiconducting InN nanowires

Reui-San Chen, Tsang-Ho Yang, Hsin-Yi Chen, Li-Chyong Chen, Kuei-Hsien Chen, Ying-Jay Yang, Chun-Hsi Su, and Chii-Ruey Lin

Appl. Phys. Lett. 95, 162112 (2009); http://dx.doi.org/10.1063/1.3242023 (3 pages) | Cited 9 times

Online Publication Date: 23 October 2009

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We report on the photoconductivity study of the individual infrared-absorbing indium nitride (InN) nanowires. Temperature-dependent dark conductivity measurement indicates the semiconducting transport behavior of these InN nanowires. An enhanced photosensitivity from 0.3 to 14 is observed by lowering the temperature from 300 to 10 K. A calculated ultrahigh photoconductive gain at around 8×107 at room temperature is obtained from the low-bandgap nitride nanowire under 808 nm excitation.
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73.63.-b Electronic transport in nanoscale materials and structures
72.40.+w Photoconduction and photovoltaic effects
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
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