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19 Oct 2009

Volume 95, Issue 16, Articles (16xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 162501 (2009); http://dx.doi.org/10.1063/1.3248257 (3 pages)

W. W. Lei, D. Liu, P. W. Zhu, X. H. Chen, Q. Zhao, G. H. Wen, Q. L. Cui, and G. T. Zou
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A multispectral and polarization-selective surface-plasmon resonant midinfrared detector

Jessie Rosenberg, Rajeev V. Shenoi, Thomas E. Vandervelde, Sanjay Krishna, and Oskar Painter

Appl. Phys. Lett. 95, 161101 (2009); http://dx.doi.org/10.1063/1.3244204 (3 pages) | Cited 14 times

Online Publication Date: 19 October 2009

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We demonstrate a multispectral polarization sensitive midinfrared dots-in-a-well photodetector utilizing surface-plasmonic resonant elements, with tailorable frequency response and polarization selectivity. The resonant responsivity of the surface-plasmon detector shows an enhancement of up to five times that of an unpatterned control detector. As the plasmonic resonator involves only surface patterning of the top metal contact, this method is independent of light-absorbing material and can easily be integrated with current focal plane array processing for imaging applications.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Wide-band continuous-wave terahertz source with a vertically integrated photomixer

E. Peytavit, J-F. Lampin, F. Hindle, C. Yang, and G. Mouret

Appl. Phys. Lett. 95, 161102 (2009); http://dx.doi.org/10.1063/1.3251071 (3 pages) | Cited 3 times

Online Publication Date: 20 October 2009

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A transverse electromagnetic horn antenna is monolithically integrated with a low temperature grown GaAs vertical photodetector on a silicon substrate forming a vertically integrated photomixer. Continuous-wave terahertz radiation is generated at frequencies up to 3.5 THz with a power level reaching 20 nW around 3 THz. Microwave and material concepts allow both qualitative and quantitative explanations of the experimental results. The thin film microstrip line topology has been adapted for active devices by an Au–Au thermocompression layer transfer technique and seems to be a promising generic tool for a new generation of efficient terahertz devices.
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84.40.Ba Antennas: theory, components and accessories
85.60.Gz Photodetectors (including infrared and CCD detectors)

Ultrabroadband supercontinuum generation from ultraviolet to 6.28 μm in a fluoride fiber

Guanshi Qin, Xin Yan, Chihiro Kito, Meisong Liao, Chitrarekha Chaudhari, Takenobu Suzuki, and Yasutake Ohishi

Appl. Phys. Lett. 95, 161103 (2009); http://dx.doi.org/10.1063/1.3254214 (3 pages) | Cited 26 times

Online Publication Date: 21 October 2009

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Ultrabroadband supercontinuum light expanding from ultraviolet to 6.28 μm is generated in a centimeter-long fluoride fiber pumped by a 1450 nm femtosecond laser. The spectral broadening in the fluoride fiber is caused by self-phase modulation, Raman scattering and four-wave mixing. The experimental and simulated results show that fluoride fiber is a promising candidate for generating the midinfrared supercontinuum light up to 8 μm.
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42.81.Dp Propagation, scattering, and losses; solitons
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Variable liquid crystal pretilt angles generated by photoalignment in homeotropically aligned azo dye-doped liquid crystals

Andy Ying-Guey Fuh, Cheng-Kai Liu, Ko-Ting Cheng, Chi-Lung Ting, Che-Chang Chen, Paul Chang-Po Chao, and Hsu-Kuan Hsu

Appl. Phys. Lett. 95, 161104 (2009); http://dx.doi.org/10.1063/1.3253413 (3 pages) | Cited 9 times

Online Publication Date: 21 October 2009

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This letter demonstrates the feasibility of producing variable liquid crystal (LC) pretilt angles using light-induced ripple structures (LIRSs) in homeotropically aligned azo dye-doped liquid crystals (ADDLCs). Illuminating homeotropically aligned ADDLCs with a linearly polarized light for a suitable period yields the LIRSs which provide LCs an anisotropic homogeneous anchoring force. Experimentally, the effective alignment force produced by the homeotropic alignment layer and the LIRSs determines the LC pretilt angle (24° to 63.5°), defined from the normal to the substrate. A no-bias pi cell for liquid crystal displays is demonstrated using this approach.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
61.30.Hn Surface phenomena: alignment, anchoring, anchoring transitions, surface-induced layering, surface-induced ordering, wetting, prewetting transitions, and wetting transitions
85.60.Pg Display systems

Nonlinear laser-driven electron resonance acceleration in an inhomogeneous magnetic field

Jun Li, Bai-Song Xie, Hai-Bo Sang, Xue-Ren Hong, Shan Zhang, and M. Y. Yu

Appl. Phys. Lett. 95, 161105 (2009); http://dx.doi.org/10.1063/1.3253415 (3 pages) | Cited 1 time

Online Publication Date: 21 October 2009

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Electron resonance acceleration by an intense laser pulse in an inhomogeneous external magnetic field is investigated. The acceleration mechanism makes use of electron cyclotron resonance to increase the electron energy. By appropriately tailoring the radial gradient of the magnetic field, an electron in the rising front part of laser pulse will be attracted toward the cyclotron-resonance radius and be trapped there, so that it can gain much energy. It is shown that the electron net energy gain can be up to the GeV level.
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41.75.Jv Laser-driven acceleration
52.38.Kd Laser-plasma acceleration of electrons and ions

Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si

Hyun-Yong Yu, Donghyun Kim, Shen Ren, Masaharu Kobayashi, David A. B. Miller, Yoshio Nishi, and Krishna C. Saraswat

Appl. Phys. Lett. 95, 161106 (2009); http://dx.doi.org/10.1063/1.3254181 (3 pages) | Cited 3 times

Online Publication Date: 22 October 2009

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We demonstrate the effect of uniaxial tensile and compressive strain in Ge p-i-n photodiode integrated on Si using four-point bending structures. Responsivity at 1550 nm is increased from 0.67 to 0.75 A/W by tensile strain in the 〈110〉 direction while for compressive strain it decreases from 0.67 to 0.477 A/W. These uniaxial tensile and compressive strains also effectively result in shifts of the absorption spectra toward longer and shorter wavelength as they reduce or increase the direct bandgap energy of the Ge layer, respectively.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.De Semiconductor-device characterization, design, and modeling

Ultraviolet and solar-blind spectral imaging with subwavelength transmission gratings

S. H. Lim and E. T. Yu

Appl. Phys. Lett. 95, 161107 (2009); http://dx.doi.org/10.1063/1.3257365 (3 pages) | Cited 2 times

Online Publication Date: 23 October 2009

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Aluminum gratings with subwavelength slit widths were designed and analyzed for spectral filtering of ultraviolet (UV) light. Although schemes for optical wavelength filtering have been thoroughly studied, options for UV wavelength filtering are far more limited. We analyze the unique requirements for UV based imaging and evaluate the suitability of our structures by electromagnetic simulations and experimental measurements. Rayleigh–Wood anomalies are shown to lead to sharp drops in transmission at resonance wavelengths, producing a high finesse band reject filter. Finally, we show that the structures are effective for both TE and TM polarizations and easily integrated onto semiconductor photodetectors.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
42.79.Ci Filters, zone plates, and polarizers
FREE

Multi-beam multi-wavelength semiconductor lasers

Nanfang Yu, Mikhail A. Kats, Christian Pflügl, Markus Geiser, Qi Jie Wang, Mikhail A. Belkin, Federico Capasso, Milan Fischer, Andreas Wittmann, Jérôme Faist, Tadataka Edamura, Shinichi Furuta, Masamichi Yamanishi, and Hirofumi Kan

Appl. Phys. Lett. 95, 161108 (2009); http://dx.doi.org/10.1063/1.3253713 (3 pages) | Cited 9 times

Online Publication Date: 23 October 2009

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Multibeam emission and spatial wavelength demultiplexing in semiconductor lasers by patterning their facets with plasmonic structures is reported. Specifically, a single-wavelength laser was made to emit beams in two directions by defining on its facet two metallic gratings with different periods. The output of a dual-color laser was spatially separated according to wavelength by using a single metallic grating. The designs can be integrated with a broad range of active or passive optical components for applications such as interferometry and demultiplexing.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics
42.79.Dj Gratings

Influence of nanocrystal size on dielectric functions of Si nanocrystals embedded in SiO2 matrix

Rong-Jun Zhang, Yi-Ming Chen, Wei-Jie Lu, Qing-Yuan Cai, Yu-Xiang Zheng, and Liang-Yao Chen

Appl. Phys. Lett. 95, 161109 (2009); http://dx.doi.org/10.1063/1.3254183 (3 pages) | Cited 6 times

Online Publication Date: 23 October 2009

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The complex dielectric functions of Si-nanocrystals (nc-Si) with different sizes embedded in SiO2 matrix synthesized by SiOx/SiO2 superlattice approach is obtained by spectroscopic ellipsometry. The Maxwell–Garnett effective medium approximation and the Lorentz oscillator model are employed in the spectra fitting. The dependence of the dielectric functions on the nc-Si size is observed. A significant suppression in amplitude of the dielectric functions with respect to bulk crystalline silicon, and a large influence of the nc-Si size on the E1 and E2 critical points are observed and discussed.
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81.07.Bc Nanocrystalline materials
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
81.05.Cy Elemental semiconductors
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
81.16.-c Methods of micro- and nanofabrication and processing
77.22.Ch Permittivity (dielectric function)

Efficient hole transport in asymmetric coupled InGaN multiple quantum wells

Jiang-Yong Zhang, Li-E Cai, Bao-Ping Zhang, Xiao-Long Hu, Fang Jiang, Jin-Zhong Yu, and Qi-Ming Wang

Appl. Phys. Lett. 95, 161110 (2009); http://dx.doi.org/10.1063/1.3254232 (3 pages) | Cited 9 times

Online Publication Date: 23 October 2009

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InGaN based light emitting devices (LEDs) with asymmetric coupled quantum wells (AS-QWs) and conventional symmetric coupled quantum wells (CS-QWs) active structures were grown by metal-organic chemical vapor deposition technique. The LEDs with AS-QWs active region show improved light emission intensity and reduced forward voltage compared with LEDs with CS-QWs active region. Based on the electroluminescence measurements and the devices structure analysis, it can be concluded that these improvements are mainly attributed to the efficient hole tunneling through barriers and consequently the uniform distribution of carriers in the AS-QWs.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

All-optical signal gating using ytterbium-doped fiber and a pair of thermally expanded core fibers

Linh Viet Nguyen and Youngjoo Chung

Appl. Phys. Lett. 95, 161111 (2009); http://dx.doi.org/10.1063/1.3233971 (3 pages) | Cited 1 time

Online Publication Date: 23 October 2009

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We report all-optical signal gating using ytterbium-doped fiber (YDF) and a pair of thermally expanded core fibers (TECFs). Splicing the YDF with two TECFs at their expanded-core ends, we obtained an interference pattern in the transmission spectrum of the device. When pumped by a laser diode at 980 nm, the interference fringes shift to longer wavelength due mainly to the resonantly enhanced nonlinearity of the YDF. Consequently, signals within the interference pattern can be gated or blocked all optically. Full gating of cw signals at 1564.21 and 1564.54 nm were obtained using a pump power of about 38.44 mW.
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42.82.Gw Other integrated-optical elements and systems
42.81.Bm Fabrication, cladding, and splicing
42.82.Cr Fabrication techniques; lithography, pattern transfer
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