Mg doping and its effect on the semipolar GaN(112) growth kinetics

Lahourcade, L.; Pernot, J.; Wirthmüller, A.; Chauvat, M. P.; Ruterana, P.; Laufer, A.; Eickhoff, M.; Monroy, E.

doi:doi:10.1063/1.3256189

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Short range ordering in Fe–Ge and Fe–Ga single crystals

We report on the nature of short range ordering (SRO) in slow cooled (100) and (111) Fe81.6Ga18.4 and Fe81Ge9 single crystals determined by x-ray θ-2θ scans. The SRO of the Ga atoms has at least some D03 character. In contrast Ge atoms only exhibit B2 chemical ordering symmetries in the short range order. It has been proposed that the D03 character in the SRO is important for the enhancement in magnetoelasticity in Fe-based alloys; however the presence of B2 character in Fe–Ge alloys suggest th...

Mg doping of thermochromic VO₂ films enhances the optical transmittance and decreases the metal-insulator transition temperature

Thermochromic films of MgxV1−xO2 were made by reactive dc magnetron sputtering onto heated glass. The metal-insulator transition temperature decreased by ∼ 3 K/at. %Mg, while the optical transmittance increased concomitantly. Specifically, the transmittance of visible light and of solar radiation was enhanced by ∼ 10% when the Mg content was ∼ 7 at. %. Our results point at the usefulness of these films for energy efficient fenestration.

We report the effect of Mg doping on the growth kinetics of semipolar GaN(11 math

2) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(11 math

2). We observe an enhancement of Mg incorporation in GaN(11 math

2) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.

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KEYWORDS and PACS

Keywords

gallium compounds, III-V semiconductors, magnesium, molecular beam epitaxial growth, semiconductor doping, semiconductor growth, semiconductor thin films, surface segregation, wide band gap semiconductors

PACS

68.55.ag

Semiconductors
81.15.Hi

Molecular, atomic, ion, and chemical beam epitaxy
68.35.Dv

Composition, segregation; defects and impurities
61.72.uj

III-V and II-VI semiconductors

ARTICLE DATA

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http://dx.doi.org/10.1063/1.3256189

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0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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