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2 Nov 2009

Volume 95, Issue 18, Articles (18xxxx)

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Appl. Phys. Lett. 95, 183504 (2009); http://dx.doi.org/10.1063/1.3256223 (3 pages)

Hoon-Sik Kim, Sang Min Won, Young-Geun Ha, Jong-Hyun Ahn, Antonio Facchetti, Tobin J. Marks, and John A. Rogers
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Trigonal paramagnetic interface defect in epitaxial Ge3N4/(111)Ge

A. P. D. Nguyen, A. Stesmans, V. V. Afanas’ev, R. R. Lieten, and G. Borgs

Appl. Phys. Lett. 95, 183501 (2009); http://dx.doi.org/10.1063/1.3237175 (3 pages) | Cited 1 time

Online Publication Date: 3 November 2009

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We report on the observation by electron spin resonance (ESR) of an anisotropic paramagnetic defect at the interface of epitaxially grown Ge3N4/(111)Ge entities with nanometer thin Ge3N4 layers. The defect exhibits trigonal C3v symmetry characterized by g∥ ≈ 2.0023 and g⊥ ≈ 2.0032, and is observed most prominently after 10 eV optical excitation, with maximum areal density ≈ 2×1011 cm−2. The defect is suggested to concern the Ge K-type center, its occurrence appearing inherent to the specific heteroepitaxial interface matching.
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76.30.Mi Color centers and other defects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection

B.-M. Nguyen, S. Bogdanov, S. Abdollahi Pour, and M. Razeghi

Appl. Phys. Lett. 95, 183502 (2009); http://dx.doi.org/10.1063/1.3258489 (3 pages) | Cited 20 times

Online Publication Date: 3 November 2009

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We present a hybrid photodetector design that inherits the advantages of traditional photoconductive and photovoltaic devices. The structure consists of a barrier layer blocking the transport of majority holes in a p-type semiconductor, resulting in an electrical transport due to minority carriers with low current density. By using the M-structure superlattice as a barrier region, the band alignments can be experimentally controlled, allowing for the efficient extraction of the photosignal with less than 50 mV bias. At 77 K, a 14 μm cutoff detector exhibits a dark current 3.3 mA/cm2, a photoresponsivity of 1.4 A/W, and the associated shot noise detectivity of 4×1010 Jones.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.20.Fr Low-field transport and mobility; piezoresistance
73.63.-b Electronic transport in nanoscale materials and structures
72.40.+w Photoconduction and photovoltaic effects

Improved red-response in thin film a-Si:H solar cells with soft-imprinted plasmonic back reflectors

Vivian E. Ferry, Marc A. Verschuuren, Hongbo B. T. Li, Ruud E. I. Schropp, Harry A. Atwater, and Albert Polman

Appl. Phys. Lett. 95, 183503 (2009); http://dx.doi.org/10.1063/1.3256187 (3 pages) | Cited 53 times

Online Publication Date: 3 November 2009

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The impact of controlled nanopatterning on the Ag back contact of an n-i-p a-Si:H solar cell was investigated experimentally and through electromagnetic simulation. Compared to a similar reference cell with a flat back contact, we demonstrate an efficiency increase from 4.5% to 6.2%, with a 26% increase in short circuit current density. Spectral response measurements show the majority of the improvement between 600 and 800 nm, with no reduction in photocurrent at wavelengths shorter than 600 nm. Optimization of the pattern aspect ratio using electromagnetic simulation predicts absorption enhancements over 50% at 660 nm.
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81.16.Rf Micro- and nanoscale pattern formation
73.50.Pz Photoconduction and photovoltaic effects

Self-assembled nanodielectrics and silicon nanomembranes for low voltage, flexible transistors, and logic gates on plastic substrates

Hoon-Sik Kim, Sang Min Won, Young-Geun Ha, Jong-Hyun Ahn, Antonio Facchetti, Tobin J. Marks, and John A. Rogers

Appl. Phys. Lett. 95, 183504 (2009); http://dx.doi.org/10.1063/1.3256223 (3 pages) | Cited 5 times

Online Publication Date: 4 November 2009

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This letter reports the fabrication and electrical characterization of mechanically flexible and low operating voltage transistors and logic gates (NOT, NAND, and NOR gates) using printed silicon nanomembranes and self-assembled nanodielectrics on thin plastic substrates. The transistors exhibit effective linear mobilities of ∼ 680 cm2/V s, on/off ratios >107, gate leakage current densities <2.8×10−7 A/cm2, and subthreshold slopes ∼ 120 mV/decade. The inverters show voltage gains as high as 4.8. Simple digital logic gates (NAND and NOR gates) demonstrate the possible application of this materials combination in digital integrated circuits.
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84.30.Sk Pulse and digital circuits
85.30.Tv Field effect devices
81.05.Cy Elemental semiconductors
81.07.-b Nanoscale materials and structures: fabrication and characterization

Highly efficient cross-linked PbS nanocrystal/C60 hybrid heterojunction photovoltaic cells

S. W. Tsang, H. Fu, R. Wang, J. Lu, K. Yu, and Y. Tao

Appl. Phys. Lett. 95, 183505 (2009); http://dx.doi.org/10.1063/1.3257729 (3 pages) | Cited 25 times

Online Publication Date: 5 November 2009

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We present a highly efficient hybrid heterojunction photovoltaic (PV) cell with a colloidal inorganic nanocrystal (NC) electron donor and an organic electron acceptor. The heterojunction is formed by a thin film of cross-linked PbS NCs and a vacuum deposited C60 layer. Compared to the PbS-only PV cell, the heterojunction device has improved the power conversion efficiency from 1.6% to 2.2% under 1 sun of simulated Air Mass 1.5 Global (AM 1.5G) irradiation. The C60 layer effectively prevents exciton quenching at the NC/metal interface, as evidenced by a significant improvement in fill factor of the heterojunction devices.
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85.60.-q Optoelectronic devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
71.35.-y Excitons and related phenomena
82.70.Dd Colloids
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Energy band-alignment of a multimetal-layer gated metal-oxide-semiconductor structure

Zilan Li, Michel Houssa, Tom Schram, Stefan De Gendt, and Kristin De Meryer

Appl. Phys. Lett. 95, 183506 (2009); http://dx.doi.org/10.1063/1.3243339 (3 pages) | Cited 2 times

Online Publication Date: 5 November 2009

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The energy band-alignment of a multimetal-layer gated metal-oxide-semiconductor structure is investigated. An analytical expression for the Fermi level of the metal stack is derived. It is shown that the thin metal layer contacting the gate dielectric plays a critical role in determining the work function of the whole metal stack, in agreement with experimental results.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.55.-g Dielectric thin films
73.30.+y Surface double layers, Schottky barriers, and work functions
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