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2 Nov 2009

Volume 95, Issue 18, Articles (18xxxx)

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Appl. Phys. Lett. 95, 183504 (2009); http://dx.doi.org/10.1063/1.3256223 (3 pages)

Hoon-Sik Kim, Sang Min Won, Young-Geun Ha, Jong-Hyun Ahn, Antonio Facchetti, Tobin J. Marks, and John A. Rogers
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Spontaneous buildup of surface potential with a thin film of a zwitterionic molecule giving noncentrosymmetric crystal structure

Jun’ya Tsutsumi, Hiroyuki Yoshida, Richard Murdey, and Naoki Sato

Appl. Phys. Lett. 95, 182901 (2009); http://dx.doi.org/10.1063/1.3254217 (3 pages) | Cited 1 time

Online Publication Date: 3 November 2009

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Surface potentials were examined using the Kelvin method for thin films of zwitterionic molecules, pyridinium 1,3-dihydro-1,3-dioxo-2H-inden-2-ylide (PI or IPB) and two nitrogen-substituted derivatives. Spontaneous buildup of the surface potential on the film (5.5 V at a film thickness of 300 nm) was only observed for the compound with unidirectional orientation of the molecular dipole moments in the single crystal. The relationship between the alignment of the molecular dipole moments in the film and the measured surface potentials was investigated using grazing incidence x-ray diffraction, pole-figure measurements, atomic force microscopy, and Kelvin probe force microscopy.
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68.55.-a Thin film structure and morphology
68.35.bm Polymers, organics

Composition-dependent dielectric properties of RbTiOPO4 single crystals

Jna. Gavaldà, J. J. Carvajal, X. Mateos, M. Aguiló, and F. Díaz

Appl. Phys. Lett. 95, 182902 (2009); http://dx.doi.org/10.1063/1.3258000 (3 pages) | Cited 2 times

Online Publication Date: 3 November 2009

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We measured the ionic conductivity for two single crystals of RbTiOPO4 grown in self-fluxes with different chemical composition. Ionic conductivity depended on the composition of the self-flux solution in which the crystal was grown. One of the samples showed an anisotropic behavior along the three crystallographic axes while the other showed a nearly isotropic behavior of the ac conductivity.
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66.30.H- Self-diffusion and ionic conduction in nonmetals
81.10.Dn Growth from solutions

Study on dielectric and magnetodielectric properties of Lu3Fe5O12 ceramics

Xiaobo Wu, Xiaofei Wang, Yunfei Liu, Wei Cai, Song Peng, Fengzhen Huang, Xiaomei Lu, Feng Yan, and Jinsong Zhu

Appl. Phys. Lett. 95, 182903 (2009); http://dx.doi.org/10.1063/1.3259651 (3 pages) | Cited 13 times

Online Publication Date: 5 November 2009

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Polycrystalline Lu3Fe5O12 ceramics with garnet structure were prepared by a solid-state reaction method. A dielectric relaxor behavior at low temperature was observed which may come from the dipolar effects associated with the charge carrier hopping between Fe2+ and Fe3+. It is noticeable that their magnetodielectric (MD) properties are excellent since the applied small magnetic fields can dramatically change the dielectric constants of Lu3Fe5O12 ceramics. The origin of the MD effect is discussed.
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77.22.Ch Permittivity (dielectric function)
72.20.Ee Mobility edges; hopping transport
77.80.-e Ferroelectricity and antiferroelectricity

Investigation of the electrocaloric effect in a PbMg2/3Nb1/3O3-PbTiO3 relaxor thin film

T. M. Correia, J. S. Young, R. W. Whatmore, J. F. Scott, N. D. Mathur, and Q. Zhang

Appl. Phys. Lett. 95, 182904 (2009); http://dx.doi.org/10.1063/1.3257695 (3 pages) | Cited 39 times

Online Publication Date: 6 November 2009

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Permittivity measurements of a 0.93PMN-0.07PT thin film show a broad maximum near 35 °C, and an anomaly at the depolarizing temperature Td = 18 °C on heating only, suggesting a dipolar glass-relaxor phase transition. No structural phase transition at 18 °C is apparent from ferroelectric hysteresis loops taken on field cooling and field heating. These loops show the thermal hysteresis expected for ferroelectric relaxors, which has not hitherto been experimentally verified in PbMg2/3Nb1/3O3-PbTiO3 thin films. Our data suggest the intriguing possibility of a giant electrocaloric effect (ΔT = 9 K, ΔE = 720 kV cm−1) at and near room temperature.
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77.70.+a Pyroelectric and electrocaloric effects
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
77.80.Dj Domain structure; hysteresis
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