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2 Nov 2009

Volume 95, Issue 18, Articles (18xxxx)

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Appl. Phys. Lett. 95, 183504 (2009); http://dx.doi.org/10.1063/1.3256223 (3 pages)

Hoon-Sik Kim, Sang Min Won, Young-Geun Ha, Jong-Hyun Ahn, Antonio Facchetti, Tobin J. Marks, and John A. Rogers
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Measurement of effective electron mass in biaxial tensile strained silicon on insulator

S. F. Feste, Th. Schäpers, D. Buca, Q. T. Zhao, J. Knoch, M. Bouhassoune, Arno Schindlmayr, and S. Mantl

Appl. Phys. Lett. 95, 182101 (2009); http://dx.doi.org/10.1063/1.3254330 (3 pages) | Cited 11 times

Online Publication Date: 2 November 2009

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We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov–de Haas oscillations in the temperature range of T = 0.4–4 K for magnetic fields of B = 0–10 T were measured. The effective electron mass in SSOI and SOI samples was determined as mt = (0.20±0.01)m0. This result is in excellent agreement with first-principles calculations of the effective electron mass in the presence of strain.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
85.30.Tv Field effect devices
72.20.My Galvanomagnetic and other magnetotransport effects
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Negative differential resistance in conductive polymer and semiconducting quantum dot nanocomposite systems

S. Biswas, M. Dutta, and M. A. Stroscio

Appl. Phys. Lett. 95, 182102 (2009); http://dx.doi.org/10.1063/1.3258350 (3 pages) | Cited 7 times

Online Publication Date: 2 November 2009

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We report the room temperature negative differential resistance (NDR) phenomenon in nanocomposite heterostructures made of semiconducting quantum dots embedded in conductive polymers. The peak to valley ratio of the current is 91 at room temperature which increases to 2965 at 77 K. The current voltage characteristics are simulated for a double barrier resonant tunneling device formed by semiconducting quantum dots and polymer molecules. The temperature dependence is also simulated and compared with the experimental results. A close agreement is found for the experimental and the simulation results for the location of the NDR peaks.
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73.63.Kv Quantum dots
73.40.Gk Tunneling
73.23.-b Electronic transport in mesoscopic systems

Mechanism for tautomerization induced conductance switching of naphthalocyanin molecule

Qiang Fu, Jinlong Yang, and Yi Luo

Appl. Phys. Lett. 95, 182103 (2009); http://dx.doi.org/10.1063/1.3224186 (3 pages) | Cited 4 times

Online Publication Date: 3 November 2009

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Reaction mechanism for tautomerization process of a single naphthalocyanin molecule has been studied using density functional theory. It is found that tautomerization of the naphthalocyanin molecule is not a concerted reaction, but a step-wise process in that one hydrogen atom transfers after another. A stable intermediate state and the possible transition state of the reaction processes have been located. The occurrence of the intermediate state suggests that the tautomerization induced conductance switching involves four conductance states with different conductances, and the earlier proposed two-state system model is not valid.
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82.30.Qt Isomerization and rearrangement
82.20.Db Transition state theory and statistical theories of rate constants
82.20.Uv Stochastic theories of rate constants

Design of graphene electronic devices using nanoribbons of different widths

G. G. Naumis, M. Terrones, H. Terrones, and L. M. Gaggero-Sager

Appl. Phys. Lett. 95, 182104 (2009); http://dx.doi.org/10.1063/1.3257731 (3 pages) | Cited 2 times

Online Publication Date: 5 November 2009

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We present a simple design of a field effect transistor based on graphene nanoribbons, taking advantage of the metallic and semiconductor nature of nanoribbons with different widths. Such device could be constructed by using lithography techniques. The conductance of the proposed device is obtained by using the Kubo formula, assuming a strong damping due to the substrate and imperfections of the lattice. By removing the control electrodes, the design could also be used as an electrical resistance.
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85.30.Tv Field effect devices
81.16.Nd Micro- and nanolithography

Investigation of electron wave function hybridization in Ga0.25In0.75As/InP arrays

T. P. Martin, M. S. Fairbanks, B. C. Scannell, C. A. Marlow, H. Linke, and R. P. Taylor

Appl. Phys. Lett. 95, 182105 (2009); http://dx.doi.org/10.1063/1.3258495 (3 pages) | Cited 1 time

Online Publication Date: 5 November 2009

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We present a measurement technique for quantifying coupling between semiconductor quantum dots in an array. This technique employs magnetoconductance fluctuations to probe the decrease in the average spacing of the quantum energy levels as the electron wave functions in the dots undergo hybridization. Focusing on Ga0.25In0.75As dots, we investigate hybridization as the coupling strength is varied and the number of dots in the array is increased. Our technique reveals a significant drop in the average energy level spacing for multiple dot arrays, which is strong evidence for wave function hybridization.
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73.21.La Quantum dots
73.63.Kv Quantum dots
72.20.My Galvanomagnetic and other magnetotransport effects

Large electromechanical coupling factor film bulk acoustic resonator with X-cut LiNbO3 layer transfer

M. Pijolat, S. Loubriat, S. Queste, D. Mercier, A. Reinhardt, E. Defaÿ, C. Deguet, L. Clavelier, H. Moriceau, M. Aïd, and S. Ballandras

Appl. Phys. Lett. 95, 182106 (2009); http://dx.doi.org/10.1063/1.3258496 (3 pages) | Cited 4 times

Online Publication Date: 5 November 2009

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As layer transfer techniques have been notably improved in the past years, lithium niobate (LiNbO3) appears as a candidate for the next generation of ultrawide band radio frequency (rf) filters. Depending on the crystalline orientation, LiNbO3 can achieve electromechanical coupling factors Kt2 more than six times larger than those of sputtered aluminum nitride films. In this letter, a process based on direct bonding, grinding, polishing, and deep reactive ion etching is proposed to fabricate a single crystal LiNbO3 film bulk acoustic resonator. From the fabricated test vehicles, Kt2 of 43% is measured confirming the values predicted by theoretical computations.
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77.65.Fs Electromechanical resonance; quartz resonators
81.65.Cf Surface cleaning, etching, patterning
81.65.Ps Polishing, grinding, surface finishing

Observation of the zero-magnetic-field exciton spin splitting in high quality bulk GaAs and AlGaAs

E. V. Kozhemyakina, K. S. Zhuravlev, A. Amo, D. Ballarini, and L. Viña

Appl. Phys. Lett. 95, 182107 (2009); http://dx.doi.org/10.1063/1.3257369 (3 pages) | Cited 1 time

Online Publication Date: 6 November 2009

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We present an experimental study of the zero-magnetic-field exciton spin splitting measured by time-resolved photoluminescence in high purity bulk GaAs and AlGaAs samples. The dynamics of the splitting differs from that observed in two dimensions. Initially, the splitting increases during 100–250 ps and then decays. This initial increase is attributed to the fast rise of the density of excitons formed from noncorrelated e-h pairs. The splitting dynamics is used to determine the exciton formation time, which is found to vary with excitation density from 70 to 360 ps.
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71.35.-y Excitons and related phenomena
78.55.Cr III-V semiconductors

Accelerated interface defect removal in amorphous/crystalline silicon heterostructures using pulsed annealing and microwave heating

T. F. Schulze, H. N. Beushausen, T. Hansmann, L. Korte, and B. Rech

Appl. Phys. Lett. 95, 182108 (2009); http://dx.doi.org/10.1063/1.3255018 (3 pages) | Cited 6 times

Online Publication Date: 6 November 2009

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We present postdeposition annealing experiments on undoped amorphous-/n-type crystalline silicon [(i)a-Si:H/(n)c-Si/(i)a-Si:H] heterostructures used as precursors for a-Si:H/c-Si high-efficiency solar cells. Comparing conventional hotplate-heating with pulsed microwave-heating we obtain excellent interface passivation and demonstrate that microwave annealing proceeds significantly faster. The effect is ascribed to the details of microwave absorption, which selectively affects Si–H bonds and thus facilitates hydrogen bond reconfiguration needed for interface passivation. Infrared absorption spectroscopy shows that the main contribution to passivation is not stemming from bulk hydrogen reconfiguration. This suggests a hydrogen-rich interface layer, whose occurrence depends on a-Si:H deposition conditions, to be responsible for the fast annealing.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.72.Cc Kinetics of defect formation and annealing
73.61.Cw Elemental semiconductors
78.30.Am Elemental semiconductors and insulators
78.66.Db Elemental semiconductors and insulators
81.05.Cy Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
78.66.Jg Amorphous semiconductors; glasses
81.05.Gc Amorphous semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.ag Semiconductors
81.65.Rv Passivation
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Field dependence of barrier heights and luminescence properties in polar and nonpolar InGaN/GaN single quantum wells

Hooyoung Song, Jin Soak Kim, Eun Kyu Kim, Sung-Ho Lee, and Sung-Min Hwang

Appl. Phys. Lett. 95, 182109 (2009); http://dx.doi.org/10.1063/1.3258649 (3 pages)

Online Publication Date: 6 November 2009

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The external field dependence of barrier heights and the internal field dependence of luminescence properties in InxGa1−xN/GaN single quantum wells (SQWs) with polar (x = 0.13) and nonpolar (x = 0.15) orientations were investigated. The conduction band offset of a SQW was characterized by using deep level transient spectroscopy. At a reverse bias of −3 V, the barrier height of the nonpolar SQW was estimated to be 0.42 eV, which is smaller than the 0.60 eV seen in the polar SQW due to the absence of internal fields along the nonpolar direction. Both samples showed a redshift of barrier heights with increasing reverse bias. The carrier recombination affected by carrier localization, quantum-confined Stark effect, and Varshni’s shift was analyzed through temperature-dependent photoluminescence. Numerical simulations of the barrier heights and internal fields showed good agreement with experimental results.
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78.67.De Quantum wells
71.55.Eq III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.55.Cr III-V semiconductors
73.21.Fg Quantum wells
73.63.Hs Quantum wells
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