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2 Nov 2009

Volume 95, Issue 18, Articles (18xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 183504 (2009); http://dx.doi.org/10.1063/1.3256223 (3 pages)

Hoon-Sik Kim, Sang Min Won, Young-Geun Ha, Jong-Hyun Ahn, Antonio Facchetti, Tobin J. Marks, and John A. Rogers
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A simple atmospheric pressure room-temperature air plasma needle device for biomedical applications

X. Lu, Z. Xiong, F. Zhao, Y. Xian, Q. Xiong, W. Gong, C. Zou, Z. Jiang, and Y. Pan

Appl. Phys. Lett. 95, 181501 (2009); http://dx.doi.org/10.1063/1.3258071 (3 pages) | Cited 31 times

Online Publication Date: 2 November 2009

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Rather than using noble gas, room air is used as the working gas for an atmospheric pressure room-temperature plasma. The plasma is driven by submicrosecond pulsed directed current voltages. Several current spikes appear periodically for each voltage pulse. The first current spike has a peak value of more than 1.5 A with a pulse width of about 10 ns. Emission spectra show that besides excited OH, O, N2(C–B), and N2+(B–X) emission, excited NO, N2(B–A), H, and even N emission are also observed in the plasma, which indicates that the plasma may be more reactive than that generated by other plasma jet devices. Utilizing the room-temperature plasma, preliminary inactivation experiments show that Enterococcus faecalis can be killed with a treatment time of only several seconds.
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52.75.-d Plasma devices
87.85.-d Biomedical engineering

Evolution of laser-induced carbon particle breakdown in gas

Hong-Yu Chu and Man-Chon Si

Appl. Phys. Lett. 95, 181502 (2009); http://dx.doi.org/10.1063/1.3258493 (3 pages) | Cited 2 times

Online Publication Date: 3 November 2009

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We investigate the evolution of the laser-induced breakdown of a suspended micrometer-sized carbon particle at 460 torr N2 gas environment. An elliptical hot gas resulting from the ionizations of the particle breakdown and the gas breakdown is observed. We show that the deformation of the elliptical gas starts from the vertical direction and the counterpropagating flows leads to a protruding tail at later stage. The rarefaction wave is suspected to be responsible for the deformation of the gas core and the formation of the vortex ring structure, which is different from the previous laser-induced gas breakdown investigations.
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51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)

Hot and super-hot hydrogen atoms in microwave plasma

E. Tatarova, E. Felizardo, F. M. Dias, M. Lino da Silva, C. M. Ferreira, and B. Gordiets

Appl. Phys. Lett. 95, 181503 (2009); http://dx.doi.org/10.1063/1.3259658 (3 pages) | Cited 4 times

Online Publication Date: 5 November 2009

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“Super-hot” (kinetic energy ∼ 4–8 eV) and “hot” (kinetic energy ∼ 0.3 eV) H atoms were detected in a surface wave (500 MHz) generated H2 plasma column, at pressure p = 0.01 mbar, from the analysis of the Hβ, Hγ, Hδ, and Hε emission line profiles. These profiles were found to evolve from single Gaussian to bi-Gaussian toward the plasma column end. Population inversion between the levels 5→4 and 6→4 was detected. At pressure p = 0.2 mbar, super-hot atoms were not detected and the temperature of the hot atoms was found to increase with the upper level principal quantum number.
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32.80.Xx Level crossing and optical pumping
52.80.Pi High-frequency and RF discharges
52.35.-g Waves, oscillations, and instabilities in plasmas and intense beams

Enhancement of electric force by ion-neutral collisions

G. Makrinich and A. Fruchtman

Appl. Phys. Lett. 95, 181504 (2009); http://dx.doi.org/10.1063/1.3257694 (3 pages) | Cited 5 times

Online Publication Date: 5 November 2009

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The measured force exerted on an ion flow by an electric field is found to be larger than the electric force that can be exerted if the ions are collisionless. In addition, the increase of the gas pressure is found to result in an increase of the electric force despite a simultaneous decrease of the deposited electric power. Employing a simple model, we argue that these experimental findings result from the electric force being felt by the ions for a longer time, their residence time in the acceleration region is increased due to their slowing-down collisions with neutrals.
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52.20.Hv Atomic, molecular, ion, and heavy-particle collisions
52.30.-q Plasma dynamics and flow

Terahertz vacuum electronic circuits fabricated by UV lithographic molding and deep reactive ion etching

Young-Min Shin, Larry R. Barnett, Diana Gamzina, Neville C. Luhmann, Jr., Mark Field, and Robert Borwick

Appl. Phys. Lett. 95, 181505 (2009); http://dx.doi.org/10.1063/1.3259823 (3 pages) | Cited 9 times

Online Publication Date: 6 November 2009

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The 0.22 THz vacuum electronic circuits fabricated by UV lithography molding and deep reactive ion etching processes are under investigation for submillimeter wave applications. Eigenmode transient simulations show that, accounting for realistic values of our currently achievable fabrication tolerances, the transmission, and dispersion properties of the operation modes of a TE-mode, staggered, double grating circuit are maintained within less than 1 dB and 2% deviation, respectively. Scanning electron microscopy and atomic force microscopy analyses of the fabricated circuit samples demonstrate that both of the microelectromechanical system fabrication approaches produce circuits with ±3–5 μm dimensional tolerance and ∼ 30 nm surface roughness.
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85.45.-w Vacuum microelectronics
81.16.-c Methods of micro- and nanofabrication and processing
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
85.40.Hp Lithography, masks and pattern transfer
81.65.Cf Surface cleaning, etching, patterning

Purified Si film formation from metallurgical-grade Si by hydrogen plasma induced chemical transport

Hiromasa Ohmi, Akihiro Goto, Daiki Kamada, Yoshinori Hamaoka, Hiroaki Kakiuchi, and Kiyoshi Yasutake

Appl. Phys. Lett. 95, 181506 (2009); http://dx.doi.org/10.1063/1.3261751 (3 pages) | Cited 2 times

Online Publication Date: 6 November 2009

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Purified Si film is prepared directly from metallurgical-grade Si (MG-Si) by using hydrogen plasma induced chemical transport at subatmospheric pressure. The purification mechanism is based on the different hydrogenation behaviors of the various impurity elements in MG-Si. The prepared Si films clearly had fewer typical metal impurities (Fe, Al, Ti, Cr, Mn, etc.) than those in the MG-Si. In particular, the Fe concentration was drastically reduced from 6900 mass ppm to less than 0.1 mass ppm by one time chemical transport. Furthermore, metal impurity concentrations were further reduced by repeating chemical transport deposition.
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68.55.ag Semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
52.77.Dq Plasma-based ion implantation and deposition
81.15.Jj Ion and electron beam-assisted deposition; ion plating
81.05.Cy Elemental semiconductors
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