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9 Nov 2009

Volume 95, Issue 19, Articles (19xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 193101 (2009); http://dx.doi.org/10.1063/1.3258663 (3 pages)

L. Gaudreau, A. Kam, G. Granger, S. A. Studenikin, P. Zawadzki, and A. S. Sachrajda
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Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers

Q. Cao, S. F. Yoon, C. Z. Tong, C. Y. Ngo, C. Y. Liu, R. Wang, and H. X. Zhao

Appl. Phys. Lett. 95, 191101 (2009); http://dx.doi.org/10.1063/1.3259659 (3 pages) | Cited 5 times

Online Publication Date: 9 November 2009

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The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.79.Wc Optical coatings
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers

Alexei Altoukhov, Jacques Levrat, Eric Feltin, Jean-François Carlin, Antonino Castiglia, Raphaël Butté, and Nicolas Grandjean

Appl. Phys. Lett. 95, 191102 (2009); http://dx.doi.org/10.1063/1.3259720 (3 pages) | Cited 2 times

Online Publication Date: 9 November 2009

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The authors report on the achievement of a vertically oriented three pair airgap/GaN distributed Bragg reflector realized by controlled oxidation and wet-chemical etching of AlInN sacrificial layers. Microreflectivity measurements exhibit high peak reflectivity values of 87% around 500 nm after the oxidation process and 90% around 600 nm after the etching process in overall good agreement with simulations. The broad stopband of airgap/GaN mirrors, about 250 nm wide, results from the strong refractive index contrast between air and GaN layers.
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42.82.-m Integrated optics
42.79.Bh Lenses, prisms and mirrors
81.65.Mq Oxidation
81.65.Cf Surface cleaning, etching, patterning

Periodically poled KTiOAsO4 for highly efficient midinfrared optical parametric devices

Andrius Zukauskas, Nicky Thilmann, Valdas Pasiskevicius, Fredrik Laurell, and Carlota Canalias

Appl. Phys. Lett. 95, 191103 (2009); http://dx.doi.org/10.1063/1.3258001 (3 pages) | Cited 2 times

Online Publication Date: 9 November 2009

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We demonstrate high pattern-fidelity periodic poling of KTiOAsO4 at room temperature. The periodically poled crystal shows a deff of 10.1 pm/V and is used in an optical parametric oscillator pumped at 1064 nm to generate parametric radiation at 1538 and 3452 nm with a conversion efficiency of 45%.
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84.30.Ng Oscillators, pulse generators, and function generators
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.22.Ej Polarization and depolarization

The study of plasma plume induced by pulsed laser ablation of silicon

Qing-Ju Huang and Jian-Wen Chen

Appl. Phys. Lett. 95, 191104 (2009); http://dx.doi.org/10.1063/1.3242357 (3 pages) | Cited 1 time

Online Publication Date: 10 November 2009

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Some photographs of laser-induced silicon plasma plume are obtained through synchronous photographs. The experimental results show that the plasma plume has different color properties at different areas. Each area of the plasma plume decreases gradually as gas pressure increases, and color becomes lighter as the atmospheric pressure increases. The main light-emission excitation mechanisms of plasma plume at different areas are analyzed. The excitation mechanism of the central area is bremsstrahlung, as for medial area, it is the combination excitation of electrons and ions, while in the outermost area, it is due to the collision excitation of electrons and atoms.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
81.15.Fg Pulsed laser ablation deposition

Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes

Martin F. Schubert, Qi Dai, Jiuru Xu, Jong Kyu Kim, and E. Fred Schubert

Appl. Phys. Lett. 95, 191105 (2009); http://dx.doi.org/10.1063/1.3258488 (3 pages) | Cited 6 times

Online Publication Date: 10 November 2009

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Optical emission resulting from 405 nm selective photoexcitation of carriers in the GaInN/GaN quantum well (QW) active region of a light-emitting diode reveals two recombination channels. The first recombination channel is the recombination of photoexcited carriers in the GaInN QWs. The second recombination channel is formed by carriers that leak out of the GaInN QW active region, self-bias the device in forward direction, induce a forward current, and subsequently recombine in the GaInN active region in a spatially distributed manner. The results indicate dynamic carrier transport involving active, confinement, and contact regions of the device.
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85.60.Jb Light-emitting devices
81.07.St Quantum wells
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors

Dependence of polarization splitting on mode tuning in microcavities

F. Becker, M. Langner, H. Fröb, V. G. Lyssenko, K. Leo, and C. Adachi

Appl. Phys. Lett. 95, 191106 (2009); http://dx.doi.org/10.1063/1.3263145 (3 pages) | Cited 1 time

Online Publication Date: 10 November 2009

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We present an in-depth analysis of the angle and mode tuning dependence of the polarization splitting in detuned organic microcavities. The system consists of highly reflecting dielectric mirrors comprising a continuous wedge-shaped cavity layer of 4,4′-bis(N-carbazole)-biphenyl, doped with 2 wt % of 4,4′-bis[(N-carbazole)styryl]-biphenyl as the active material. By varying the measurement position across the sample, we shift the resonant mode with respect to the center of the cavity stop band. Starting from small detunings, the splitting value increases non-linearly up to 58 meV, when the resonant modes reach the stop band edge. We compare this behavior with results from transfer matrix calculations and theoretical predictions.
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42.79.Bh Lenses, prisms and mirrors
42.70.Jk Polymers and organics

Experimental verification of broadband invisibility using a cloak based on inductor-capacitor networks

Xiu Liu, Chao Li, Kan Yao, Xiankun Meng, Wei Feng, Bingheng Wu, and Fang Li

Appl. Phys. Lett. 95, 191107 (2009); http://dx.doi.org/10.1063/1.3263149 (3 pages) | Cited 11 times

Online Publication Date: 10 November 2009

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We demonstrate the experimental realization of an invisibility cloak based on inductor-capacitor (L-C) transmission line (TL) networks. The anisotropic medium parameters of a cloak in the cylindrical basis are controlled independently by three branches of the L-C unit cell, which leads to a full-parameter realization of the cloak. A cylindrical cloak working in very-high-frequency band has been designed and fabricated, with its performance measured. The nonresonant property of the TL structure results in a relatively broad bandwidth (from 24 to 40 MHz) of the realized cloak, which is clearly observed in our experiment.
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84.30.-r Electronic circuits
84.32.Hh Inductors and coils; wiring
84.32.Tt Capacitors

Surface plasmon excitation of amplified spontaneous emission from laser dye molecules embedded in polymer matrix

O. Popov, V. Lirtsman, and D. Davidov

Appl. Phys. Lett. 95, 191108 (2009); http://dx.doi.org/10.1063/1.3262955 (3 pages) | Cited 4 times

Online Publication Date: 11 November 2009

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We report on amplified spontaneous emission (ASE) from a polymer waveguide film containing laser dye molecules (active layer) excited by surface plasmon. The polymer waveguide is deposited on an intermediate polymer layer on top of a metal film on a prism, forming a planar Kretschmann–Raether configuration. The ASE was observed in both a surface plasmon mode and a waveguide mode. In both cases, the photoluminescence was enhanced by a factor of 4 with respect to that which was observed from the same active layer deposited on a bare glass substrate. We show that efficient excitation can be achieved only when the active layer is placed on top of an intermediate polymer layer. The intermediate layer prevents back coupling of light into the prism and possible quenching.
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78.45.+h Stimulated emission
78.66.Qn Polymers; organic compounds
78.66.Bz Metals and metallic alloys
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.68.+m Optical properties of surfaces

Local tuning of photonic crystal nanocavity modes by laser-assisted oxidation

H. S. Lee, S. Kiravittaya, S. Kumar, J. D. Plumhof, L. Balet, L. H. Li, M. Francardi, A. Gerardino, A. Fiore, A. Rastelli, and O. G. Schmidt

Appl. Phys. Lett. 95, 191109 (2009); http://dx.doi.org/10.1063/1.3262961 (3 pages) | Cited 14 times

Online Publication Date: 11 November 2009

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The authors demonstrate a simple method to achieve local tuning of optical modes in GaAs photonic crystal nanocavities by continuous wave laser-assisted oxidation in air atmosphere. By irradiation with a focused laser beam at power levels of a few tens of milliwatts, photonic crystal nanocavity modes shift to shorter wavelengths by up to 2.5 nm. The mode shifts can be controlled either by varying the laser power or by iterating laser-assisted oxidation steps and are well explained by finite-element-method and finite-difference time-domain simulations. This method provides a simple route to achieve fine spectral tuning of individual nanocavities for photonic devices.
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42.62.-b Laser applications
42.70.Qs Photonic bandgap materials

Superconducting nanowire single-photon detector in an optical cavity for front-side illumination

Burm Baek, Jeffrey A. Stern, and Sae Woo Nam

Appl. Phys. Lett. 95, 191110 (2009); http://dx.doi.org/10.1063/1.3263715 (3 pages) | Cited 6 times

Online Publication Date: 12 November 2009

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We have integrated superconducting nanowire single-photon detectors (SNSPDs) with an optical cavity design for front-side illumination. Our optical cavity design increases the coupling efficiency of light to the nanowire detector and enables straightforward proximity fiber-coupling for a multichannel detector system. Using a confocal optical scanning technique, we measured a significantly enhanced optical absorptance of 73% in comparison with 20% in a typical bare nanowire device at 1550 nm and 3 K. Our method of fabrication of these devices on a silicon wafer and the local optical absorptance measurement are important steps toward developing next-generation SNSPD technology.
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85.25.Oj Superconducting optical, X-ray, and γ-ray detectors (SIS, NIS, transition edge)
42.82.-m Integrated optics
42.82.Bq Design and performance testing of integrated-optical systems
42.81.Qb Fiber waveguides, couplers, and arrays
42.82.Cr Fabrication techniques; lithography, pattern transfer

Fiber laser generating switchable radially and azimuthally polarized beams with 140 mW output power at 1.6 μm wavelength

Renjie Zhou, Baldemar Ibarra-Escamilla, Joseph W. Haus, Peter E. Powers, and Qiwen Zhan

Appl. Phys. Lett. 95, 191111 (2009); http://dx.doi.org/10.1063/1.3263724 (3 pages) | Cited 9 times

Online Publication Date: 12 November 2009

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We report a fiber laser design that is capable of producing switchable radially and azimuthally polarized beams at 1.6 μm. A c-cut calcite crystal within a three-lens telescope is inserted in the cavity of an erbium doped fiber laser design. Due to the axially symmetric birefringence of the calcite crystal, radially, and azimuthally polarized modes have spatially separated foci in the cavity. Switching between the radially and azimuthally polarized outputs can be achieved by simply translating one of the lenses of the telescope. Output power more than 135 mW for both polarizations has been obtained.
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42.55.Wd Fiber lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.81.Gs Birefringence, polarization
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Bh Lenses, prisms and mirrors

Dual-microring-resonator interference sensor

Huaxiang Yi, D. S. Citrin, Yao Chen, and Zhiping Zhou

Appl. Phys. Lett. 95, 191112 (2009); http://dx.doi.org/10.1063/1.3263726 (3 pages) | Cited 7 times

Online Publication Date: 12 November 2009

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Dual-microring-resonator interference with the microrings on separate arms of a Mach–Zehnder interferometer is shown to provide the basis for high-performance sensors. The output spectrum, which depends on the overlap of the resonances of the two microring resonators, depends sensitively on the resonance shift of one of the microrings due to the presence of an analyte. The sensitivity and detection limit are obtained theoretically and found to be as large as 0.31 nm overlap resonance shift according to 2×10−6 refractive index units for Si-based sensors.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.60.Ly Interferometers
07.10.Cm Micromechanical devices and systems

Subwavelength focusing behavior of high numerical-aperture phase Fresnel zone plates under various polarization states

Rakesh G. Mote, S. F. Yu, W. Zhou, and X. F. Li

Appl. Phys. Lett. 95, 191113 (2009); http://dx.doi.org/10.1063/1.3263728 (3 pages) | Cited 4 times

Online Publication Date: 12 November 2009

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An analytical model is developed to study the subwavelength focusing characteristics of a binary phase Fresnel zone plate (FZP). The model shows that high numerical-aperture phase FZP under the illumination of linear polarized light produces rotationally asymmetric focal spot with beamwidth varying from 0.36λ to 0.79λ, where λ is the wavelength. On the other hand, rotationally symmetric focal spot with minimum beamwidth of 0.39λ can be obtained from the illumination of radial polarized light.
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42.79.Ci Filters, zone plates, and polarizers
42.25.Ja Polarization

Incidence dependence of negative index in asymmetric cut wire pairs metamaterials

Shah Nawaz Burokur, Thomas Lepetit, and André de Lustrac

Appl. Phys. Lett. 95, 191114 (2009); http://dx.doi.org/10.1063/1.3263730 (3 pages)

Online Publication Date: 12 November 2009

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Metamaterials made of asymmetric cut wire pairs have experimentally demonstrated a negative refractive index at microwave frequencies. In this letter, we begin by presenting the analogy between asymmetric cut wire pairs and S-shaped metamaterials by a simple unifying approach. Then, using simulations and experiments in the microwave domain, we investigate the dependence of resonances and retrieved effective index on the incident angle in asymmetric cut wire pairs. While it is found that resonances shift in frequency with increasing oblique incidence in the E-plane, it is shown that the structure is angle-independent in the H-plane.
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81.05.Xj Metamaterials for chiral, bianisotropic and other complex media

Chip-based microcavities coupled to nitrogen-vacancy centers in single crystal diamond

Paul E. Barclay, Kai-Mei C. Fu, Charles Santori, and Raymond G. Beausoleil

Appl. Phys. Lett. 95, 191115 (2009); http://dx.doi.org/10.1063/1.3262948 (3 pages) | Cited 33 times

Online Publication Date: 12 November 2009

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Optical coupling of nitrogen-vacancy centers in single-crystal diamond to an on-chip microcavity is demonstrated. The microcavity is fabricated from a hybrid gallium phosphide and diamond material system and supports whispering gallery mode resonances with spectrometer resolution limited Q>25 000.
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42.82.-m Integrated optics
42.79.-e Optical elements, devices, and systems
61.72.jd Vacancies

Polarization splitting of discrete states in square shaped organic photonic dots

E. Siebert-Henze, M. Langner, M. Sudzius, S. I. Hintschich, H. Fröb, V. G. Lyssenko, and K. Leo

Appl. Phys. Lett. 95, 191116 (2009); http://dx.doi.org/10.1063/1.3259719 (3 pages) | Cited 2 times

Online Publication Date: 13 November 2009

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We analyze the polarization dependence of the discrete photonic states in an organic microcavity system that is laterally confined on the micron scale. Via microscopic photoluminescence measurements on square shaped photonic dots, we demonstrate a polarization splitting that increases up to 10 meV for higher order modes. These experimental results are evaluated using a vectorial waveguide approach and the splitting is attributed to phase shifts, which occur as a result of reflection at the side walls of the mesa structures.
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78.67.Hc Quantum dots
78.55.Kz Solid organic materials
78.66.Qn Polymers; organic compounds

Combined whispering gallery mode laser from hexagonal ZnO microcavities

J. Dai, C. X. Xu, R. Ding, K. Zheng, Z. L. Shi, C. G. Lv, and Y. P. Cui

Appl. Phys. Lett. 95, 191117 (2009); http://dx.doi.org/10.1063/1.3264080 (3 pages) | Cited 14 times

Online Publication Date: 13 November 2009

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The hexagonal ZnO microrods were employed as whispering gallery mode (WGM) microcavities to obtain ultraviolet laser at room temperature. For each individual ZnO microrod, the laser presented low threshold and high quality Q factor and clear WGM spectral structure. The lasing spectra from different microcavities were combined together by pumping two or more ZnO microrods simultaneously. The resonant process and lasing characteristics, such as lasing mode, threshold, and Q factor, were investigated in experiment and theory.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Sa Microcavity and microdisk lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Nanofabrication of diffractive elements for soft x-ray and extreme ultraviolet applications using ion beam lithography

Johannes Lenz, Thomas Wilhein, and Stephan Irsen

Appl. Phys. Lett. 95, 191118 (2009); http://dx.doi.org/10.1063/1.3258655 (3 pages) | Cited 3 times

Online Publication Date: 13 November 2009

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In the soft x-ray (SXR) and extreme ultraviolet (EUV) spectral region, optical elements are mainly based on diffractive structures. We report on experiments showing the fabrication of such elements using ion beam lithography. This allows single-step milling of freestanding transmission as well as reflection gratings. Minimum structure sizes of 70 nm were achieved. The optical elements were tested in slit grating spectrographs at an ethanol-jet laser-induced plasma source. Relative spectral resolutions of λ/Δλ ≈ 100 were observed in the SXR- and EUV-region.
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42.79.Dj Gratings
42.86.+b Optical workshop techniques
42.82.Cr Fabrication techniques; lithography, pattern transfer
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Nanoparticle plasma ejected directly from solid copper by localized microwaves

E. Jerby, A. Golts, Y. Shamir, S. Wonde, J. B. A. Mitchell, J. L. LeGarrec, T. Narayanan, M. Sztucki, D. Ashkenazi, Z. Barkay, and N. Eliaz

Appl. Phys. Lett. 95, 191501 (2009); http://dx.doi.org/10.1063/1.3259781 (3 pages) | Cited 7 times

Online Publication Date: 9 November 2009

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A plasma column ejected directly from solid copper by localized microwaves is studied. The effect stems from an induced hotspot that melts and emits ionized copper vapors as a confined fire column. Nanoparticles of ∼ 20–120 nm size were revealed in the ejected column by in situ small-angle x-ray scattering. Optical spectroscopy confirmed the dominance of copper particles in the plasma column originating directly from the copper substrate. Nano- and macroparticles of copper were verified also by ex situ scanning electron microscopy. The direct conversion of solid metals to nanoparticles is demonstrated and various applications are proposed.
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52.50.Sw Plasma heating by microwaves; ECR, LH, collisional heating
52.40.Hf Plasma-material interactions; boundary layer effects

Negative ion surface production through sputtering in hydrogen plasma

L. Schiesko, M. Carrère, J.-M. Layet, and G. Cartry

Appl. Phys. Lett. 95, 191502 (2009); http://dx.doi.org/10.1063/1.3258352 (3 pages) | Cited 6 times

Online Publication Date: 11 November 2009

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A graphite sample is negatively biased in a hydrogen plasma. H− ions created on the surface are accelerated by the sheath toward a mass spectrometer where they are detected according to their energy. The ion distribution function shows two contributions: a main peak followed by an energetic tail. It was previously proven backscattering of positive ions as negative ions is responsible for the high energy tail. In this paper we demonstrate 75% of negative ion surface production is coming from sputtering of adsorbed hydrogen atoms as negative ions. The positive ion energy threshold for this mechanism is around 20 eV and its maximum around 70 eV.
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52.40.Hf Plasma-material interactions; boundary layer effects
29.25.Ni Ion sources: positive and negative
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
52.40.Kh Plasma sheaths

Experiments on peer-to-peer locking of magnetrons

E. J. Cruz, B. W. Hoff, P. Pengvanich, Y. Y. Lau, R. M. Gilgenbach, and J. W. Luginsland

Appl. Phys. Lett. 95, 191503 (2009); http://dx.doi.org/10.1063/1.3262970 (3 pages) | Cited 4 times

Online Publication Date: 12 November 2009

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Experiments on peer-to-peer locking of 2 kW magnetrons are performed. These experiments verify the recently developed theory on the condition under which the two nonlinear oscillators may be locked to a common frequency. Dependent on the coupling, the frequency of oscillation when locking occurs does not necessarily lie between the free running frequencies of the two isolated, stand-alone magnetrons. Likewise, when the locking condition is violated, the beat frequency is not necessarily equal to the difference between these free running frequencies.
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)

Effect of the resonant growth of harmonics on the electron density in capacitively coupled plasma

Yohei Yamazawa

Appl. Phys. Lett. 95, 191504 (2009); http://dx.doi.org/10.1063/1.3261752 (3 pages) | Cited 2 times

Online Publication Date: 13 November 2009

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The growth of harmonics is known to occur under the condition of plasma series resonance (PSR). In an actual plasma process chamber, the external circuit also affects the PSR. We experimentally demonstrated the resonant growth of the third and fourth harmonics by tuning a variable capacitor attached to the electrode, and investigated the influence of the growth on the electron density. We observed significant increases in electron density as the amplitude of harmonics grows. The result clearly shows that nonlinear electron resonance heating actually takes place.
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52.50.Qt Plasma heating by radio-frequency fields; ICR, ICP, helicons
52.35.Mw Nonlinear phenomena: waves, wave propagation, and other interactions (including parametric effects, mode coupling, ponderomotive effects, etc.)
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Temperature dependence of ministop band in double-slots photonic crystal waveguides

Kaiyu Cui, Yidong Huang, Gengyan Zhang, Yongzhuo Li, Xuan Tang, Xiaoyu Mao, Qiang Zhao, Wei Zhang, and Jiangde Peng

Appl. Phys. Lett. 95, 191901 (2009); http://dx.doi.org/10.1063/1.3258072 (3 pages) | Cited 5 times

Online Publication Date: 10 November 2009

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We proposed and fabricated a double-slots photonic crystal waveguides (PCWGs) structure formed by introducing two slots into PCWGs with air-bridge structure on silicon-on-insulator substrate. The mode characteristics of double-slots PCWGs were investigated theoretically and experimentally. The transmission spectra present a sharp and deep dip (22 dB with bandwidth of 6 nm) caused by ministop band in the proposed structure, which is 15 dB deeper than that in the W3 PCWG. Additionally, dependence of the dip on temperature in the double-slots PCWG was measured and a temperature coefficient 0.159 nm/°C can be concluded.
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42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials
42.86.+b Optical workshop techniques

Arrhenius behavior of hydrocarbon fuel photochemical reaction rates by thermal lens spectroscopy

N. G. C. Astrath, F. B. G. Astrath, J. Shen, J. Zhou, K. H. Michaelian, C. Fairbridge, L. C. Malacarne, P. R. B. Pedreira, P. A. Santoro, and M. L. Baesso

Appl. Phys. Lett. 95, 191902 (2009); http://dx.doi.org/10.1063/1.3258661 (3 pages) | Cited 3 times

Online Publication Date: 10 November 2009

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The temperature dependence of thermo-optical and photochemical reaction properties of hydrocarbon fuels is investigated using thermal lens spectroscopy. We consider the time dependence of the absorption coefficient due to the photoinduced chemical reaction (PCR) and species diffusion to evaluate nonequilibrium characteristics of the samples. The measured temperature dependences of the reaction rates are found to follow the Arrhenius correlation. Experimental results for thermophysical properties of the samples and an analysis of the connection between PCR properties and the chemistry of the samples are also presented.
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89.20.Kk Engineering

Local chemical states and thermal stabilities of nitrogen dopants in ZnO film studied by temperature-dependent x-ray photoelectron spectroscopy

X. H. Li, H. Y. Xu, X. T. Zhang, Y. C. Liu, J. W. Sun, and Y. M. Lu

Appl. Phys. Lett. 95, 191903 (2009); http://dx.doi.org/10.1063/1.3259644 (3 pages) | Cited 4 times

Online Publication Date: 11 November 2009

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Local chemical states and thermal stabilities of N dopants in ZnO:N film are investigated by temperature-dependent x-ray photoelectron spectroscopy. Different types of N local states are detected, including N2 molecules occupying O sites [(N2)O], –NO species, substitutional N atoms in O- and N-rich local environments (α- and β-NO). Compared to the β-NO, the α-NO shows a better thermal stability up to 723 K. However, the transformation from α-NO acceptor to undesirable (N2)O donor occurs above 743 K. The variation of N local states also affects Zn and O binding energies. Photoluminescence studies indicate the shallow acceptor nature of α-NO.
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81.05.Dz II-VI semiconductors
61.72.uj III-V and II-VI semiconductors
68.60.Dv Thermal stability; thermal effects
71.55.Gs II-VI semiconductors
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
68.55.ag Semiconductors
61.50.Lt Crystal binding; cohesive energy
79.60.Dp Adsorbed layers and thin films
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