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9 Nov 2009

Volume 95, Issue 19, Articles (19xxxx)

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Appl. Phys. Lett. 95, 193101 (2009); http://dx.doi.org/10.1063/1.3258663 (3 pages)

L. Gaudreau, A. Kam, G. Granger, S. A. Studenikin, P. Zawadzki, and A. S. Sachrajda
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Effect of anisotropic charge transport on device characteristics of polymer solar cells

Manas Shah, Victor Pryamitsyn, and Venkat Ganesan

Appl. Phys. Lett. 95, 194101 (2009); http://dx.doi.org/10.1063/1.3259645 (3 pages) | Cited 2 times

Online Publication Date: 11 November 2009

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We present a model for photovoltaic device characteristics based on drift-diffusion ideas which allows for prescription of arbitrary morphologies of donor and acceptor phases while simultaneously incorporating the role of anisotropic charge transport of holes and excitons. We use such a model to address the interplay between anisotropic charge transport and the orientational and/or crystalline ordering of donor molecules. We presents results illustrating the influence of the degree of orientational ordering, the impact of ordering parallel and perpendicular to the electrodes and the role of device thickness.
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88.40.H- Solar cells (photovoltaics)

Realization of reliable and flexible logic gates using noisy nonlinear circuits

K. Murali, I. Rajamohamed, Sudeshna Sinha, William L. Ditto, and Adi R. Bulsara

Appl. Phys. Lett. 95, 194102 (2009); http://dx.doi.org/10.1063/1.3245318 (3 pages) | Cited 13 times

Online Publication Date: 11 November 2009

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It was shown recently [ Murali et al., Phys. Rev. Lett. 102, 104101 (2009) ] that when one presents two square waves as input to a two-state system, the response of the system can produce a logical output (NOR/OR) with a probability controlled by the interplay between the system noise and the nonlinearity (that characterizes the bistable dynamics). One can switch or “morph” the output into another logic operation (NAND/AND) whose probability displays analogous behavior; the switching is accomplished via a controlled symmetry-breaking dc input. Thus, the interplay of nonlinearity and noise yields flexible and reliable logic behavior, and the natural outcome is, effectively, a logic gate. This “logical stochastic resonance” is demonstrated here via a circuit implementation using a linear resistor, a linear capacitor and four CMOS-transistors with a battery to produce a cubiclike nonlinearity. This circuit is simple, robust, and capable of operating in very high frequency regimes; further, its ease of implementation with integrated circuits and nanoelectronic devices should prove very useful in the context of reliable logic gate implementation in the presence of circuit noise.
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84.30.Sk Pulse and digital circuits

Particle transport in porous media: The role of inertial effects and path tortuosity in the velocity of the particles

Guido Kampel, Guillermo H. Goldsztein, and Juan C. Santamarina

Appl. Phys. Lett. 95, 194103 (2009); http://dx.doi.org/10.1063/1.3263718 (3 pages)

Online Publication Date: 12 November 2009

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Fluid in porous media flows through tortuous paths. If the size of the solid particles suspended in the fluid and the fluid velocities are large enough, Brownian motion effects may not be dominant. In this parameter regime, the average velocity of the particles is different than that of the fluid. We obtain the relation between the average velocity of the particles and the average velocity of the fluid in the context of a simple mathematical model and we apply our results to flows near wells.
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47.56.+r Flows through porous media
47.55.-t Multiphase and stratified flows
82.70.Kj Emulsions and suspensions
47.57.E- Suspensions

Homologous temperature dependence of global surface scaling behaviors of polycrystalline copper films

J. J. Yang, B. Liu, Y. Wang, and K. W. Xu

Appl. Phys. Lett. 95, 194104 (2009); http://dx.doi.org/10.1063/1.3263151 (3 pages) | Cited 4 times

Online Publication Date: 12 November 2009

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A strategy integrating structure zone model with dynamic scaling theory was proposed to study the global surface dynamics of polycrystalline Cu films deposited at different homologous temperature Ts/Tm. The evolution of roughness exponent α and growth exponent β reveals a transition from random deposition to surface diffusion dominated smoothening in the lower Ts/Tm regime and then to rapid surface roughening in the higher Ts/Tm regime. In contrast to that of amorphous films, the distinct scaling behavior in higher Ts/Tm regime arises from the change of anisotropic mass transport mechanisms, which could be related to the texture evolution during growth.
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68.35.Ja Surface and interface dynamics and vibrations
68.55.at Other materials
68.35.bd Metals and alloys
68.35.Fx Diffusion; interface formation
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