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6 Jul 2009

Volume 95, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 95, 013107 (2009); http://dx.doi.org/10.1063/1.3167775 (3 pages)

T. Y. Tsai, C. Y. Lee, N. H. Tai, and W. H. Tuan
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Improved electrical characteristics of TaN/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors by fluorine incorporation

Yen-Ting Chen, Han Zhao, Jung Hwan Yum, Yanzhen Wang, Fei Xue, Fei Zhou, and Jack C. Lee

Appl. Phys. Lett. 95, 013501 (2009); http://dx.doi.org/10.1063/1.3173820 (3 pages) | Cited 17 times

Online Publication Date: 6 July 2009

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In this work, a postgate CF4 plasma treatment has been demonstrated on In0.53Ga0.47As channel metal-oxide-semiconductor field-effect transistors. Fluorine (F) has been incorporated into the atomic layer deposited Al2O3 gate dielectric by postgate CF4 plasma treatment. A smaller subthreshold swing and reduced interface trap density has been achieved with F passivation, suggesting a better interface quality. With CF4 plasma treatment, drive current, transconductance and effective channel mobility has been shown to increase by 13.9%, 12.5%, and 29.6%, in comparison to the control devices, respectively.
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85.30.Tv Field effect devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.65.Rv Passivation
85.30.De Semiconductor-device characterization, design, and modeling

Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

Kenji Nomura, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono

Appl. Phys. Lett. 95, 013502 (2009); http://dx.doi.org/10.1063/1.3159831 (3 pages) | Cited 72 times

Online Publication Date: 6 July 2009

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Threshold voltage (Vth) stability was examined under constant current stress for a-In–Ga–Zn–O thin film transistors (TFTs) deposited at room temperature and annealed at 400 °C in dry or wet O2 atmospheres. All the TFTs exhibited positive Vth shifts (ΔVth) and the ΔVth value was reduced by the thermal annealing to <2 V for 50 h. TFT simulations revealed that the ΔVth for the annealed TFTs is explained by increase in deep charged defects. Large ΔVth over 10 V and deterioration in subthreshold voltage swing were observed in the unannealed TFTs, which are attributed to the increase in shallow trap states.
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85.30.Tv Field effect devices
61.72.Cc Kinetics of defect formation and annealing
71.55.Ht Other nonmetals

Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors

Jin-Seong Park, Tae-Woong Kim, Denis Stryakhilev, Jae-Sup Lee, Sung-Guk An, Yong-Shin Pyo, Dong-Bum Lee, Yeon Gon Mo, Dong-Un Jin, and Ho Kyoon Chung

Appl. Phys. Lett. 95, 013503 (2009); http://dx.doi.org/10.1063/1.3159832 (3 pages) | Cited 73 times

Online Publication Date: 6 July 2009

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We have fabricated 6.5 in. flexible full-color top-emission active matrix organic light-emitting diode display on a polyimide (PI) substrate driven amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). The a-IGZO TFTs exhibited field-effect mobility (μFE) of 15.1 cm2/V s, subthreshold slope of 0.25 V/dec, threshold voltage (VTH) of 0.9 V. The electrical characteristics of TFTs on PI substrate, including a bias-stress instability after 1 h long gate bias at 15 V, were indistinguishable from those on glass substrate and showed high degree of spatial uniformity. TFT samples on 10 μm thick PI substrate withstood bending down to R = 3 mm under tension and compression without any performance degradation.
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85.60.Jb Light-emitting devices
85.60.Pg Display systems
42.79.Kr Display devices, liquid-crystal devices
85.30.Tv Field effect devices
FREE

Broadband high-efficiency surface-plasmon-polariton coupler with silicon-metal interface

Jie Tian, Shuqing Yu, Wei Yan, and Min Qiu

Appl. Phys. Lett. 95, 013504 (2009); http://dx.doi.org/10.1063/1.3168653 (3 pages) | Cited 34 times

Online Publication Date: 7 July 2009

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A high efficiency surface plasmonic coupler composed of a tapered silicon strip waveguide and a subwavelength scale metal gap waveguide is experimentally demonstrated. By tuning the parameters of the taper and the metal gap, the theoretical coupling efficiencies can be as high as 88% for a wide wavelength range. A silicon-gold plasmonic coupler is then fabricated, demonstrating 35% coupling efficiency per facet. Our experimental demonstration is a crucial step for hybrid integration of plasmonic components with conventional dielectric components.
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84.40.Az Waveguides, transmission lines, striplines

Lateral metal-semiconductor-metal photodetectors based on amorphous selenium

Kai Wang, Feng Chen, George Belev, Safa Kasap, and Karim S. Karim

Appl. Phys. Lett. 95, 013505 (2009); http://dx.doi.org/10.1063/1.3173818 (3 pages) | Cited 5 times

Online Publication Date: 8 July 2009

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We report a lateral metal-semiconductor-metal (MSM) photodetector (PD) based on an amorphous selenium (a-Se). The PD exhibits a dark current below 200 fA under electric fields ranging from 6 to 12 V/μm, a responsivity of up to 0.45 A/W, a photogain of 1.2 near short wavelengths of 468 nm, and a high-speed photoresponse with a rise time of 50 μs, fall time of 60 μs, and time constant of 30 μs, respectively. The lateral MSM PD based on a-Se has great potential for use in digital x-ray imaging applications.
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73.40.Sx Metal-semiconductor-metal structures
85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects

Acoustic energy harvesting using resonant cavity of a sonic crystal

Liang-Yu Wu, Lien-Wen Chen, and Chia-Ming Liu

Appl. Phys. Lett. 95, 013506 (2009); http://dx.doi.org/10.1063/1.3176019 (3 pages) | Cited 7 times

Online Publication Date: 8 July 2009

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This paper presents the development of an acoustic energy harvester using the sonic crystal and the piezoelectric material. A point defect is created by removing a rod from a perfect sonic crystal. The point defect in the sonic crystal acts as a resonant cavity, and the acoustic waves at the resonant frequency of the cavity can be localized in the cavity. The power generation from acoustic energy is based on the effect of the wave localization in the cavity of the sonic crystal and the direct piezoelectric effect of the piezoelectric material.
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43.40.At Experimental and theoretical studies of vibrating systems
43.20.Ks Standing waves, resonance, normal modes
61.72.J- Point defects and defect clusters
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials

Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator

Yeon-Keon Moon, Sih Lee, Woong-Sun Kim, Byung-Woo Kang, Chang-Oh Jeong, Dong-Hoon Lee, and Jong-Wan Park

Appl. Phys. Lett. 95, 013507 (2009); http://dx.doi.org/10.1063/1.3167816 (3 pages) | Cited 33 times

Online Publication Date: 8 July 2009

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The effects of an O2 plasma-treated SiNX-based insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) were investigated. We tried to improve the interfacial characteristics by reducing the trap density between the SiNX gate insulator and a-IGZO channel by the O2 plasma treatment. The plasma treated-device performances were remarkably improved. The drastic improvements obtained for the O2 plasma-treated a-IGZO TFTs included excellent bias stability as well as a high field effect mobility (μFE) of 19.4 cm2/V s, an on/off current (ION/IOFF) of 108, and a subthreshold value (S) of 0.5 V/decade.
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85.30.Tv Field effect devices

A multifunctional stabilizer of magnetic fluids

A. V. Lebedev and S. N. Lysenko

Appl. Phys. Lett. 95, 013508 (2009); http://dx.doi.org/10.1063/1.3171935 (3 pages)

Online Publication Date: 8 July 2009

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This study reports the discovery of the universal surfactant-polyoxipropylene, which maximally extends the range of carrier fluids for magnetic colloids. A magnetic fluid on the base of ethyl alcohol has been synthesized and its magnetic and rheological properties have been investigated. It has been found that the magnetic nanoparticles are covered by a monolayer of surfactant molecules. The fluid preserves fluidity at temperatures as low as −100 °C. Coagulation stability, with respect to the added kerosene, has been explored. It is suggested to use this effect for preparing the magnetocontrollable extractors of ethyl alcohol.
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83.80.Gv Electro- and magnetorheological fluids
83.60.Np Effects of electric and magnetic fields
82.70.Dd Colloids
75.50.Mm Magnetic liquids

Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes

Hao Long (龙浩), Guojia Fang (方国家), Huihui Huang (黄晖辉), Xiaoming Mo (莫小明), Wei Xia (夏威), Binzhong Dong (董彬忠), Xianquan Meng (孟宪权), and Xingzhong Zhao (赵兴中)

Appl. Phys. Lett. 95, 013509 (2009); http://dx.doi.org/10.1063/1.3176440 (3 pages) | Cited 21 times

Online Publication Date: 10 July 2009

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Ultraviolet light-emitting diodes based on ZnO/NiO heterojunctions were fabricated on commercially available n+-GaN/sapphire substrates using a radio frequency magnetron sputtering system. Near band edge emission of ZnO peaking at ∼ 370 nm with a full-width at half maximum of ∼ 7 nm was achieved at room temperature when the devices were under sufficient forward bias. With the help of an electron blocking i-Mg1−xZnxO(0<x<1) layer inserted between the ZnO and NiO layers, the emission intensity has been much enhanced and the threshold current drops down to ∼ 23 from ∼ 70 mA. The results were discussed in terms of the band diagrams of the heterojunctions.
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85.60.Jb Light-emitting devices

Enhanced transport properties in LaxMnO3−δ thin films epitaxially grown on SrTiO3 substrates: The profound impact of the oxygen content

P. Orgiani, C. Aruta, R. Ciancio, A. Galdi, and L. Maritato

Appl. Phys. Lett. 95, 013510 (2009); http://dx.doi.org/10.1063/1.3168649 (3 pages) | Cited 6 times

Online Publication Date: 10 July 2009

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We report on structural, magnetic, and transport properties of LaxMnO3−δ (LMO) thin films, epitaxially grown on SrTiO3 substrates by molecular beam epitaxy. Transport properties were investigated as a function of the La/Mn stoichiometry and the oxygen content. Optimal oxygenated LMO films (with stoichiometry ratio La/Mn = 0.88) show a metal-insulator transitions temperature TMI ∼ 387 K and magnetotransport similar to those found in strontium-doped La1−xSrxMnO3 manganites compounds. Also in presence of a La/Mn slight unbalance (namely, x = 0.98), LMO films show a very high TMI ∼ 370 K. However, LMO samples with La/Mn ratio larger than one, show severely depressed conducting properties, being insulating for x>1.10. All these findings clearly demonstrate that the lanthanum deficiency is a very efficient way to dope manganites, as in the case of bivalent cation-substitution.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.66.Bi Elemental solids
61.66.Dk Alloys
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
71.30.+h Metal-insulator transitions and other electronic transitions
61.72.up Other materials
75.70.Ak Magnetic properties of monolayers and thin films
73.61.Ng Insulators

Harvesting magnetic energy using extensional vibration of laminated magnetoelectric plates

C. L. Zhang, J. S. Yang, and W. Q. Chen

Appl. Phys. Lett. 95, 013511 (2009); http://dx.doi.org/10.1063/1.3176981 (3 pages) | Cited 8 times

Online Publication Date: 10 July 2009

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Magnetically forced extensional vibrations of laminated plates with piezoelectric and piezomagnetic layers are analyzed theoretically. It is shown that such a structure can be used to harvest magnetic energy and convert it to electric energy. The output power and the energy conversion efficiency are calculated. The load dependence of the magnetoelectric coupling coefficient is also obtained.
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75.80.+q Magnetomechanical effects, magnetostriction
77.65.-j Piezoelectricity and electromechanical effects
46.70.De Beams, plates, and shells
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