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6 Jul 2009

Volume 95, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 95, 013107 (2009); http://dx.doi.org/10.1063/1.3167775 (3 pages)

T. Y. Tsai, C. Y. Lee, N. H. Tai, and W. H. Tuan
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One-way electromagnetic Tamm states in magnetophotonic structures

Alexander B. Khanikaev, Alexander V. Baryshev, Mitsuteru Inoue, and Yuri S. Kivshar

Appl. Phys. Lett. 95, 011101 (2009); http://dx.doi.org/10.1063/1.3167356 (3 pages) | Cited 14 times

Online Publication Date: 6 July 2009

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We study surface Tamm states in magnetophotonic structures magnetized in the Cotton–Mouton (Voigt) geometry. We demonstrate that the periodicity violation due to the structure truncation together with the violation of the time reversal symmetry due to the presence of magneto-optical materials gives rise to nonreciprocality of the surface modes. Dispersion of forward and backward modes splits and becomes magnetization dependent. This results in the magnetization-induced transitions between bulk and surface modes and unidirectional propagation of surface waves.
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78.20.Ls Magneto-optical effects
42.70.Qs Photonic bandgap materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.68.+m Optical properties of surfaces

Short pitch cholesteric electro-optical device based on periodic polymer structures

Giovanni Carbone, Patrick Salter, Steve J. Elston, Peter Raynes, Luciano De Sio, Sameh Ferjani, Giuseppe Strangi, Cesare Umeton, and Roberto Bartolino

Appl. Phys. Lett. 95, 011102 (2009); http://dx.doi.org/10.1063/1.3159624 (3 pages) | Cited 13 times

Online Publication Date: 6 July 2009

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The helical flexoelectro-optic effect produces a submillisecond, temperature-independent in-plane rotation of the optical axis and is potentially interesting for the display industry. The main drawback is that it relies on a texture, the uniform lying helix (ULH), which is intrinsically unstable. We present a method based on the use of periodic polymeric microchannels to create highly ordered and stable ULH structures. Electro-optic measurements performed on a test device show a large contrast ratio between bright and dark states (better then 100:1), fast switching (200 μs), and large optical rotation (>30°).
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42.79.Kr Display devices, liquid-crystal devices
42.70.Df Liquid crystals
42.70.Jk Polymers and organics
42.87.-d Optical testing techniques

Intermediate-band photovoltaic solar cell based on ZnTe:O

Weiming Wang, Albert S. Lin, and Jamie D. Phillips

Appl. Phys. Lett. 95, 011103 (2009); http://dx.doi.org/10.1063/1.3166863 (3 pages) | Cited 35 times

Online Publication Date: 6 July 2009

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Oxygen doping in ZnTe is applied to a junction diode in the aim of utilizing the associated electron states 0.5 eV below the bandedge as an intermediate band for photovoltaic solar cells. The ZnTe:O diodes confirm extended spectral response below the bandedge relative to undoped ZnTe diodes, and demonstrate a 100% increase in short circuit current, 15% decrease in open circuit voltage, and overall 50% increase in power conversion efficiency. Subbandgap excitation at 650 and 1550 nm confirms the response via a two-photon process and illustrates the proposed energy conversion mechanism for an intermediate band solar cell.
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84.60.Jt Photoelectric conversion
85.30.Kk Junction diodes
61.72.uj III-V and II-VI semiconductors
81.05.Dz II-VI semiconductors

Tunable interference of light behind subwavelength apertures

Feng Gao, De Li, Ru-Wen Peng, Qing Hu, Kuang Wei, Q. J. Wang, Y. Y. Zhu, and Mu Wang

Appl. Phys. Lett. 95, 011104 (2009); http://dx.doi.org/10.1063/1.3167821 (3 pages) | Cited 4 times

Online Publication Date: 7 July 2009

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We demonstrate in this letter that electromagnetic waves passing through the subwavelength apertures on a silver film interfere with each other in the airgap behind the apertures. Depending on the width of the airgap, either constructive or destructive interference occurs. It is shown that constructive interference enhances the extraordinary optical transmission and evidently improves the quality factor, whereas destructive interference weakens the extraordinary optical transmission. We suggest that our results provide a unique approach to construct plasmonic structures and devices.
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42.79.Wc Optical coatings
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.-a Optical materials
42.15.Eq Optical system design
78.66.Bz Metals and metallic alloys

Ultrafast optical control of terahertz surface plasmons in subwavelength hole arrays at room temperature

Abul K. Azad, Hou-Tong Chen, Satish R. Kasarla, Antoinette J. Taylor, Zhen Tian, Xinchao Lu, Weili Zhang, Hong Lu, Arthur C. Gossard, and John F. O’Hara

Appl. Phys. Lett. 95, 011105 (2009); http://dx.doi.org/10.1063/1.3168510 (3 pages) | Cited 11 times

Online Publication Date: 7 July 2009

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We demonstrate optical control of surface plasmon enhanced resonant terahertz transmission in two-dimensional subwavelength metallic hole arrays fabricated on gallium arsenide based substrates. Optically pumping the arrays creates a conductive layer in the substrate, reducing the terahertz transmission amplitude of both the resonant mode and the direct transmission. Under low optical fluence, the terahertz transmission is more greatly affected by resonance damping than by propagation loss in the substrate. An ErAs:GaAs nanoisland superlattice substrate is shown to allow ultrafast control with a switching recovery time of ∼ 10 ps.
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78.68.+m Optical properties of surfaces
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.47.-p Spectroscopy of solid state dynamics
78.70.Gq Microwave and radio-frequency interactions

Metamaterial-based wireless strain sensors

Rohat Melik, Emre Unal, Nihan Kosku Perkgoz, Christian Puttlitz, and Hilmi Volkan Demir

Appl. Phys. Lett. 95, 011106 (2009); http://dx.doi.org/10.1063/1.3162336 (3 pages) | Cited 17 times

Online Publication Date: 7 July 2009

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We proposed and demonstrated metamaterial-based strain sensors that are highly sensitive to mechanical deformation. Their resonance frequency shift is correlated with the surface strain of our test material and the strain data are reported telemetrically. These metamaterial sensors are better than traditional radio-frequency (rf) structures in sensing for providing resonances with high quality factors and large transmission dips. Using split ring resonators (SRRs), we achieve lower resonance frequencies per unit area compared to other rf structures, allowing for bioimplant sensing in soft tissue (e.g., fracture healing). In 5×5 SRR architecture, our wireless sensors yield high sensitivity (109 kHz/kgf, or 5.148 kHz/microstrain) with low nonlinearity error (<200 microstrain).
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Pz Instruments for strain, force, and torque
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
84.40.Ua Telecommunications: signal transmission and processing; communication satellites
84.40.Xb Telemetry: remote control, remote sensing; radar
07.10.Cm Micromechanical devices and systems

Nonsingular two dimensional cloak of arbitrary shape

Jin Hu, Xiaoming Zhou, and Gengkai Hu

Appl. Phys. Lett. 95, 011107 (2009); http://dx.doi.org/10.1063/1.3168652 (3 pages) | Cited 15 times

Online Publication Date: 7 July 2009

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We propose a general method to circumvent the singularity (infinitely large values of material parameters) of arbitrary two dimensional (2D) cloaks. The presented method is based on the deformation view of the transformation design method. It is shown that by adjusting the principle stretch out of the cloaking plane, 2D cloaks of arbitrary shapes without singularity can be constructed. It is also demonstrated that the method based on the equivalent dispersion relation and the design method for nonsingular 2D cloak from mirror-symmetric cross section of a three dimensional (3D) cloak can be derived from the proposed theory. Examples of a cylindrical electromagnetic cloak and an arbitrary shaped 2D electromagnetic cloak without singularity are provided to demonstrate the method.
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42.90.+m Other topics in optics (restricted to new topics in section 42)
41.20.Jb Electromagnetic wave propagation; radiowave propagation
02.30.Uu Integral transforms

High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures

J. W. Lee, C. Sone, Y. Park, S.-N. Lee, J.-H. Ryou, R. D. Dupuis, C.-H. Hong, and H. Kim

Appl. Phys. Lett. 95, 011108 (2009); http://dx.doi.org/10.1063/1.3166868 (3 pages) | Cited 11 times

Online Publication Date: 7 July 2009

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We report on the enhanced quantum efficiency of GaN-based light-emitting diodes (LEDs) fabricated on inverted hexagonal pyramid dielectric mask (IHPDM)-embedded structure. The ray-tracing calculation showed that the extraction efficiency of LEDs fabricated on IHPDM-embedded structure could be enhanced up to 56%. Compared to the reference, the n-GaN template grown on IHPDM-embedded structure also showed a reduction in the dislocation density by 57%, leading to an increase in photoluminescence intensity by 82%. The LED fabricated on IHPDM-embedded structure exhibited a reduction in the forward leakage current by one order of magnitude (<1.5 V) and an enhancement in the output power by 41%.
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85.60.Jb Light-emitting devices
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
78.55.Cr III-V semiconductors

Complete suppression of surface leakage currents in microperforated blue light-emitting diodes

Y. Yang and X. A. Cao

Appl. Phys. Lett. 95, 011109 (2009); http://dx.doi.org/10.1063/1.3173201 (3 pages) | Cited 1 time

Online Publication Date: 7 July 2009

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We investigated the effects of thermal annealing and sulfide passivation on the electrical characteristics of GaN-based light-emitting diodes (LEDs) whose active regions were integrated with a plasma-etched microhole array resembling a photonic crystal structure. Thermal annealing removed most plasma damage in the near-surface bulk region, whereas (NH4)2S treatment only passivated the defect states at the immediate surface, each producing a partial recovery of the electrical characteristics. It was found that annealing at 700 °C used in conjunction with prolonged sulfide passivation eliminated all the effects of plasma damage and resulted in a complete suppression of surface leakage in the microperforated LEDs.
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85.60.Jb Light-emitting devices
61.72.Cc Kinetics of defect formation and annealing
81.65.Rv Passivation
72.80.Ey III-V and II-VI semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
73.25.+i Surface conductivity and carrier phenomena

Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

Chia-Hua Chan, Chia-Hung Hou, Shao-Ze Tseng, Tsing-Jen Chen, Hung-Ta Chien, Fu-Li Hsiao, Chien-Chieh Lee, Yen-Ling Tsai, and Chii-Chang Chen

Appl. Phys. Lett. 95, 011110 (2009); http://dx.doi.org/10.1063/1.3173817 (3 pages) | Cited 14 times

Online Publication Date: 8 July 2009

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This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO2 nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω-scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.
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85.60.Jb Light-emitting devices
81.16.Nd Micro- and nanolithography
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.16.Dn Self-assembly
81.65.Cf Surface cleaning, etching, patterning
81.16.Rf Micro- and nanoscale pattern formation

Hybrid quantitative simulation on the in-line phase-contrast x-ray imaging of three dimensional samples under actual clinic imaging parameters

Hong Yu, Shensheng Han, Jianhui Ding, Zhaoxia Jiang, and Weijun Peng

Appl. Phys. Lett. 95, 011111 (2009); http://dx.doi.org/10.1063/1.3162333 (3 pages)

Online Publication Date: 8 July 2009

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A hybrid model combining Monte Carlo method with diffraction theory of wave optics has been developed and applied to quantitatively simulate the in-line diffractive phase-contrast x-ray imaging of three dimensional tissue samples under actual clinic imaging parameters. The primary microcosmic interactions of medical-energy x-ray within matter including photoabsorption, Compton scattering, and coherent scattering, have been taken into account in the Monte Carlo simulation. A diffraction processing based on Fresnel diffraction theory is carried out to simulate the macroscopic diffraction effect. A comparison with experiment results has also been performed.
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87.59.-e X-ray imaging
87.53.Ay Biophysical mechanisms of interaction
87.10.Rt Monte Carlo simulations

Transistorlike behavior in photoconductor based on dye-sensitized solar cell

X. Q. Wang, C. B. Cai, Y. F. Wang, W. Q. Zhou, Y. M. Lu, Z. Y. Liu, L. H. Hu, and S. Y. Dai

Appl. Phys. Lett. 95, 011112 (2009); http://dx.doi.org/10.1063/1.3171926 (3 pages) | Cited 3 times

Online Publication Date: 8 July 2009

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A photogated transistor is established based on the dye-sensitized solar cell using nanocrystalline TiO2 films. Voltage-current curves are characterized with three types of transport behaviors: linear increase, saturated plateau, and breakdownlike increase, which are actually of the typical performances for a phototransistor. Moreover, an asymmetric behavior is observed in the voltage-current loops, which is believed to be due to the difference in the effective photoconducting areas rather than the cross-section areas. The photovoltaic voltage between the common counter electrode and drain (VCE-D) is examined as well during the loop measurements, clarifying that the predominant dark process in source and the predominant photovoltaic process in drain are series connected, modifying the electric potential levels, and thus resulting in the characteristic phototransistor behaviors.
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85.60.Dw Photodiodes; phototransistors; photoresistors
84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects

Enhanced transmission from a single subwavelength slit aperture surrounded by grooves on a standard detector

L. A. Dunbar, M. Guillaumée, F. de León-Pérez, C. Santschi, E. Grenet, R. Eckert, F. López-Tejeira, F. J. García-Vidal, L. Martín-Moreno, and R. P. Stanley

Appl. Phys. Lett. 95, 011113 (2009); http://dx.doi.org/10.1063/1.3160544 (3 pages) | Cited 7 times

Online Publication Date: 9 July 2009

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An enhanced transmission is detected through a single slit of subwavelength width surrounded by grooves in a gold layer that is added as a postprocess to a standard complementary metal oxide semiconductor (CMOS) fabricated detector. The enhanced transmission results from constructive interference of surface waves, which interact with the incident light. The measured enhanced transmission shows strong qualitative agreement with that predicted by the modal expansion method. With the decreasing dimensions available in standard CMOS process, such nanostructures in metals could be used to replace current optical systems or to improve performance by increasing the signal to noise ratio and/or allowing polarization selection.
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85.30.Tv Field effect devices
81.07.Bc Nanocrystalline materials

Confocal terahertz imaging

N. N. Zinov’ev and A. V. Andrianov

Appl. Phys. Lett. 95, 011114 (2009); http://dx.doi.org/10.1063/1.3173200 (3 pages) | Cited 5 times

Online Publication Date: 9 July 2009

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We report on a configuration of confocal spatial filtering applied to terahertz imaging. Theoretical analysis of the confocal terahertz imaging layout agrees fairly well with the experimental observations of the enhancement of optical resolving power, both lateral and axial, leading to three-dimensional optical slicing, in comparison with the image properties obtained with a generic terahertz imaging.
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42.30.Va Image forming and processing
42.79.Ci Filters, zone plates, and polarizers

Controlling enhanced transmission through semiconductor gratings with subwavelength slits by a magnetic field: Numerical and analytical results

Haiping Yin and P. M. Hui

Appl. Phys. Lett. 95, 011115 (2009); http://dx.doi.org/10.1063/1.3173822 (3 pages) | Cited 3 times

Online Publication Date: 10 July 2009

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We exploit the change in the permittivity tensor of a conductor by a static magnetic field as a handle to control enhanced transmission in a semiconductor grating. Numerically, results of rigorous coupled-wave analysis (RCWA) incorporating the tensorial permittivity reveal that zeroth order transmission peaks at normal incidence can be shifted by about 15% to longer wavelengths and the peak values of transmission readily doubled when a moderate magnetic field is applied. Analytically, a single-mode theory incorporating anisotropy is developed and results are in quantitative agreement with RCWA, indicating that the tunability in the transmission stems from the waveguide mode.
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42.79.Dj Gratings
41.20.Jb Electromagnetic wave propagation; radiowave propagation

Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers

Yen-Kuang Kuo, Jih-Yuan Chang, Miao-Chan Tsai, and Sheng-Horng Yen

Appl. Phys. Lett. 95, 011116 (2009); http://dx.doi.org/10.1063/1.3176406 (3 pages) | Cited 43 times

Online Publication Date: 10 July 2009

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The advantages of blue InGaN light-emitting diodes (LEDs) with InGaN barriers are studied. The L-I curves, carrier concentrations in the quantum wells, energy band diagrams, and internal quantum efficiency are investigated. The simulation results show that the InGaN/InGaN LED has better performance over its conventional InGaN/GaN counterpart due to the enhancement of electron confinement, the reduced polarization effect between the barrier and well, and the lower potential barrier height for the holes to transport in the active region. The simulation results also suggest that the efficiency droop is markedly improved when the traditional GaN barriers are replaced by InGaN barriers.
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85.60.Jb Light-emitting devices
81.07.St Quantum wells
81.05.Ea III-V semiconductors

Polarization control of 1.6 μm vertical-cavity surface-emitting lasers using InAs quantum dashes on InP(001)

J. M. Lamy, C. Paranthoen, C. Levallois, A. Nakkar, H. Folliot, J. P. Gauthier, O. Dehaese, A. Le Corre, and S. Loualiche

Appl. Phys. Lett. 95, 011117 (2009); http://dx.doi.org/10.1063/1.3176437 (3 pages) | Cited 4 times

Online Publication Date: 10 July 2009

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The authors report the demonstration of a polarization-controlled vertical-cavity surface-emitting laser (VCSEL), emitting at the telecommunication wavelength. VCSELs are based on an active medium constituted of well elongated InAs quantum dashes (QDHs) nanostructures grown on conventional (001) oriented InP substrate. QDHs present important optical polarization anisotropies according to the [1math0] crystallographic orientation. Inserted into a VCSEL microcavity, QDH VCSELs show a continuous wave laser operation at 1.6 μm, at room temperature, with a reduced 13 kW/cm2 optical excitation density threshold. The QDH VCSEL output laser polarization is fixed along the same [1math0] direction. Power and temperature dependant measurements do not show any polarization instabilities and switching on all QDH VCSELs. A polarization extinction ratio as high as 30 dB is deduced from experiments.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Sa Microcavity and microdisk lasers
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Terahertz-field-induced second-harmonic generation in a beta barium borate crystal and its application in terahertz detection

Jian Chen, Pengyu Han, and X.-C. Zhang

Appl. Phys. Lett. 95, 011118 (2009); http://dx.doi.org/10.1063/1.3176439 (3 pages) | Cited 1 time

Online Publication Date: 10 July 2009

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We report the observation of terahertz-field-induced second-harmonic (TFISH) generation in a beta barium borate (β-BBO) crystal based on a four-wave-mixing process. Using the conventional second-harmonic generation in the β-BBO crystal as a local oscillator, the crossed term between the TFISH and the local oscillator is proportional to the terahertz field. This phenomenon is used for coherent detection of intense terahertz waves, where a good linear response is observed for terahertz fields up to 160 kV/cm. In comparison, deviation from linear response and strong waveform distortion are observed when a 0.5-mm-thick ZnTe detector is used to characterize the same terahertz field.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
84.40.-x Radiowave and microwave (including millimeter wave) technology
07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques

Experimental demonstration of reflection minimization at two-dimensional photonic crystal interfaces via antireflection structures

Teun-Teun Kim, Sun-Goo Lee, Myeong-Woo Kim, Hae Yong Park, and Jae-Eun Kim

Appl. Phys. Lett. 95, 011119 (2009); http://dx.doi.org/10.1063/1.3176949 (3 pages) | Cited 14 times

Online Publication Date: 10 July 2009

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We experimentally confirm that the antireflection structures effectively minimize unnecessary reflections of self-collimated microwave beams at the interfaces of a two-dimensional photonic crystal, which is composed of cylindrical alumina rods. Optimized design parameters for the antireflection structures are obtained from the one-dimensional antireflection coating theory and the finite-difference time-domain simulations. Measured transmittance through the photonic crystal samples with and without the antireflection structures agree well with the simulation results. The measured results show that the photonic crystal with an antireflection structure yields about 90% transmission of incident power on the average in the frequency range of 12.0 to 13.0 GHz.
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42.70.Qs Photonic bandgap materials

Vertically emitting terahertz quantum cascade ring lasers

Elvis Mujagić, Christoph Deutsch, Hermann Detz, Pavel Klang, Michele Nobile, Aaron Maxwell Andrews, Werner Schrenk, Karl Unterrainer, and Gottfried Strasser

Appl. Phys. Lett. 95, 011120 (2009); http://dx.doi.org/10.1063/1.3176966 (3 pages) | Cited 14 times

Online Publication Date: 10 July 2009

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We describe the fabrication and operation of vertically emitting distributed feedback quantum cascade ring lasers operating in the terahertz frequency range. A twofold increase in radiation efficiency is observed as compared to Fabry–Pérot lasers. The emitters exhibit a robust single-mode operation around 3.2 THz with a side mode suppression ratio higher than 30 dB. Modal and threshold characteristics are investigated by performing finite element simulations with results in good agreement with experiments. The ring-shaped resonator facilitates beam collimation which results in a symmetric far-field profile.
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42.55.Px Semiconductor lasers; laser diodes
42.86.+b Optical workshop techniques
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