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16 Nov 2009

Volume 95, Issue 20, Articles (20xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 204101 (2009); http://dx.doi.org/10.1063/1.3238316 (3 pages)

Gengxin Zhang, Brandon Weeks, Richard Gee, and Amitesh Maiti
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Nanomechanical mass detection using nonlinear oscillations

Mai Duc Dai, Kilho Eom, and Chang-Wan Kim

Appl. Phys. Lett. 95, 203104 (2009); http://dx.doi.org/10.1063/1.3265731 (3 pages) | Cited 13 times

Online Publication Date: 16 November 2009

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Nanomechanical resonators have allowed the in vitro molecular recognition. Most of detection is implemented in harmonic oscillation regime, albeit nanomechanical resonators can easily reach the nonlinear oscillation regime. In this letter, we have studied the nanomechanical mass detection using nonlinear oscillators based on continuum elastic model. It is shown that nonlinear oscillation leads to the unique resonant frequency shift due to mass adsorption, quite different from that in harmonic oscillation. Moreover, the effect of mechanical tension on the mass detection in nonlinear oscillation is also discussed. This study highlights the nonlinear oscillation for label-free detection.
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07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Formation of InAs/InGaAsP quantum-dashes on InP(001)

A. Lenz, F. Genz, H. Eisele, L. Ivanova, R. Timm, D. Franke, H. Künzel, U. W. Pohl, and M. Dähne

Appl. Phys. Lett. 95, 203105 (2009); http://dx.doi.org/10.1063/1.3265733 (3 pages) | Cited 6 times

Online Publication Date: 16 November 2009

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Self-assembled InAs/InGaAsP/InP(001) nanostructures are investigated using cross-sectional scanning tunneling microscopy. Atomically resolved images at both the (110) and the (math10) cleavage surface show InAs quantum dashes with almost binary composition and a truncated pyramidal shape. The quaternary matrix material directly above the InP substrate already shows a tendency toward decomposition, which gradually increases along the [001] growth direction, in particular above quantum dash layers. This decomposition, in turn, leads to an enhanced vertical correlation in the nucleation of further quantum dash layers.
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81.16.Dn Self-assembly
42.55.Px Semiconductor lasers; laser diodes
81.07.Ta Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Crystalline organic superlattice

Feng Zhu, Kun Lou, Lizhen Huang, Jianbing Yang, Jidong Zhang, Haibo Wang, Yanhou Geng, and Donghang Yan

Appl. Phys. Lett. 95, 203106 (2009); http://dx.doi.org/10.1063/1.3256194 (3 pages) | Cited 5 times

Online Publication Date: 16 November 2009

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Highly crystalline organic superlattice has great potential for providing innovative function in organic devices. With studies of the structure and fundamental electronical properties, we have demonstrated the phathalocynine organic superlattice, which is a structure composed of periodically alternating crystalline layers of H2Pc and F16CuPc. A periodical crystal structure and electronic structure appear in this organic superlattice system. High density of mobile electrons and holes distribute periodically in F16CuPc and H2Pc layers, respectively, leading to a significant change in intrinsic properties of organic semiconductors.
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73.21.Cd Superlattices
68.65.Cd Superlattices
73.20.At Surface states, band structure, electron density of states

Effect of stacking order on the magnetic and transport properties of bilayer-based oxide superlattices with inversion symmetry

P. Padhan and W. Prellier

Appl. Phys. Lett. 95, 203107 (2009); http://dx.doi.org/10.1063/1.3265942 (3 pages)

Online Publication Date: 16 November 2009

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SrRuO3–SrMnO3 multilayers with heterointerfaces of similar inversion symmetry were fabricated. The SrTiO3/[SrMnO3/SrRuO3]15 multilayer shows lower Curie temperature, smaller magnetization and larger magnetoresistance compared to SrTiO3/[SrRuO3/SrMnO3]15 multilayer. The variations of these properties with the inversion of stacking order are well correlated with each other which occur due to pinned/biased moments and can be explained by their cumulative stress difference.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.47.Pq Other materials
72.20.My Galvanomagnetic and other magnetotransport effects
75.30.Cr Saturation moments and magnetic susceptibilities

Experimental investigation on enhanced mass transfer in nanofluids

Xiaopeng Fang, Yimin Xuan, and Qiang Li

Appl. Phys. Lett. 95, 203108 (2009); http://dx.doi.org/10.1063/1.3263731 (3 pages) | Cited 13 times

Online Publication Date: 17 November 2009

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Experiment on mass diffusion of fluorescent Rhodamine B in Cu-water nanofluids is carried out to investigate enhancement effect of mass transfer in binary nanofluid. An optical experimental system is designed to measure the diffusion coefficient of Rhodamine B in the nanofluid with different nanoparticle volume fractions under different temperatures. The effects of nanoparticles and fluid temperature on mass diffusion inside the nanofluid are discussed from the experimental data. The experimental results show that the diffusion coefficient of fluorescent Rhodamine B in nanofluids is bigger than that in de-ionized water.
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66.10.cg Mass diffusion, including self-diffusion, mutual diffusion, tracer diffusion, etc.

Measurements of modal symmetry in subwavelength plasmonic slot waveguides

M. Spasenović, D. van Oosten, E. Verhagen, and L. Kuipers

Appl. Phys. Lett. 95, 203109 (2009); http://dx.doi.org/10.1063/1.3254246 (3 pages) | Cited 8 times

Online Publication Date: 17 November 2009

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We excite a guided plasmonic mode in slot waveguides of subwavelength width. With a phase- and polarization-sensitive near-field microscope, we measure the electric field of the mode for a range of slot widths from 40 to 120 nm. The field is experimentally found to be antisymmetric across the slot gap. Numerical calculations confirm this symmetry. Calculations also show a confinement of the field to a lateral size ∼ 10 times smaller than the free-space wavelength.
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42.82.Et Waveguides, couplers, and arrays
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.66.Bz Metals and metallic alloys
78.68.+m Optical properties of surfaces

Evaluation of strain balancing layer thickness for InAs/GaAs quantum dot arrays using high resolution x-ray diffraction and photoluminescence

Christopher G. Bailey, Seth M. Hubbard, David V. Forbes, and Ryne P. Raffaelle

Appl. Phys. Lett. 95, 203110 (2009); http://dx.doi.org/10.1063/1.3264967 (3 pages) | Cited 6 times

Online Publication Date: 17 November 2009

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The impact of strain-balancing quantum dot superlattice arrays is critical to device performance. InAs/GaAs/GaP strain-balanced quantum dot arrays embedded in p-i-n diodes were investigated via high resolution x-ray diffraction (HRXRD) and photoluminescence (PL) as a function of the GaP thickness. A three-dimensional modification of the continuum elasticity theory was proposed and an optimal thickness was determined to be 3.8 ML. HRXRD-determined in-plane strain in superlattices with this range of GaP thickness gave an empirical value for the GaP thickness to be 4.5 ML. Optical characterization indicated the highest integrated PL intensity for the sample at the optimal strain balanced condition.
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62.23.Eg Nanodots
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
85.30.Kk Junction diodes
62.20.D- Elasticity
62.25.-g Mechanical properties of nanoscale systems

Microwave conductance spectra of single-walled carbon nanotube arrays

Clark Highstrete, Mark Lee, A. Alec Talin, and Andrew L. Vance

Appl. Phys. Lett. 95, 203111 (2009); http://dx.doi.org/10.1063/1.3263708 (3 pages) | Cited 1 time

Online Publication Date: 18 November 2009

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Complex conductance spectra of single-walled carbon nanotube (SWCNT) arrays have been measured from 0.1 to 50 GHz at temperatures between 4 and 293 K. Using purely capacitive contacts to separate contact effects from the NTs’ response, the intrinsic SWCNT array conductance increased with frequency as fs with exponent s = 0.67±0.08 regardless of array size and temperature. The spectra are consistent with the behavior found in many strongly inhomogeneous electronic systems. The origin of disorder in these arrays is likely topological rather than energetic.
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73.63.Fg Nanotubes
72.30.+q High-frequency effects; plasma effects

Nonvolatile memory with Co–SiO2 core-shell nanocrystals as charge storage nodes in floating gate

Hai Liu, Domingo A. Ferrer, Fahmida Ferdousi, and Sanjay K. Banerjee

Appl. Phys. Lett. 95, 203112 (2009); http://dx.doi.org/10.1063/1.3258471 (3 pages) | Cited 3 times

Online Publication Date: 18 November 2009

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See Also: RETRACTION

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In this letter, we reported nanocrystal floating gate memory with Co–SiO2 core-shell nanocrystal charge storage nodes. By using a water-in-oil microemulsion scheme, Co–SiO2 core-shell nanocrystals were synthesized and closely packed to achieve high density matrix in the floating gate without aggregation. The insulator shell also can help to increase the thermal stability of the nanocrystal metal core during the fabrication process to improve memory performance.
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81.16.-c Methods of micro- and nanofabrication and processing
84.30.Sk Pulse and digital circuits
82.70.Kj Emulsions and suspensions

Superparamagnetic limit to spin-polarized vacuum tunneling from Fe-coated W(001) tips

Y. R. Niu and M. S. Altman

Appl. Phys. Lett. 95, 203113 (2009); http://dx.doi.org/10.1063/1.3264958 (3 pages)

Online Publication Date: 19 November 2009

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Superparamagnetic fluctuations of magnetization in thin Fe films that coat a sharp W(001) tip are evident in the spin polarization of field emitted electrons. Fluctuations of polarization between four transverse directions that align with the tip 〈100〉 directions are consistent with the in-plane biaxial magnetization of Fe films on macroscopic W(001) surfaces. This superparamagnetic behavior imposes a limit to spin polarized vacuum tunneling applications that proves to be more stringent than the suppression of the Curie temperature in thin films due to finite size effects.
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75.70.Ak Magnetic properties of monolayers and thin films
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
75.76.+j Spin transport effects
72.25.Ba Spin polarized transport in metals
75.47.Np Metals and alloys
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Effects of the alkyl chain length in phosphonic acid self-assembled monolayer gate dielectrics on the performance and stability of low-voltage organic thin-film transistors

Kenjiro Fukuda, Takanori Hamamoto, Tomoyuki Yokota, Tsuyoshi Sekitani, Ute Zschieschang, Hagen Klauk, and Takao Someya

Appl. Phys. Lett. 95, 203301 (2009); http://dx.doi.org/10.1063/1.3259816 (3 pages) | Cited 20 times

Online Publication Date: 16 November 2009

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We have fabricated pentacene organic thin-film transistors (TFTs) using self-assembled monolayers (SAMs) based on alkyl-phosphonic acids with five different alkyl chain lengths as the gate dielectric and investigated the relationship between the SAM chain length and the electrical performance and stability of the transistors. A SAM chain length of 14 carbon atoms provides a maximum TFT mobility of 0.7 cm2/V s, along with an on/off current ratio greater than 105. We have also investigated the bias stress effect in these TFTs and found that the change in drain current is substantially less severe than in pentacene TFTs with polymer gate dielectrics.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
73.50.Dn Low-field transport and mobility; piezoresistance
77.84.Jd Polymers; organic compounds
FREE

Aggregates-induced dynamic negative differential resistance in conducting organic films

Xian Ning Xie, Junzhong Wang, Kian Ping Loh, and Andrew Thye Shen Wee

Appl. Phys. Lett. 95, 203302 (2009); http://dx.doi.org/10.1063/1.3266854 (3 pages) | Cited 4 times

Online Publication Date: 18 November 2009

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This letter reports the negative differential resistance (NDR) behavior of perylene-3,4,9,10-tetracarboxylic-3,4,9,10-dianhydride films induced by aggregate formation in the film. It is observed that aggregate-states in the energy gap can by-pass the common charge conduction mode, and electron injection, trapping, and conduction through these states lead to the NDR characteristic. The rate-dependence of NDR is discussed in terms of the transit time and lifetime of the aggregates-states electrons. The quenching of NDR by photoillumination is also observed, and is attributed to the saturation of aggregates-states by photoelectrons.
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73.50.Fq High-field and nonlinear effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
87.15.bk Structure of aggregates
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
FREE

Electronic properties and open-circuit voltage enhancement in mixed copper phthalocyanine:fullerene bulk heterojunction photovoltaic devices

T. W. Ng, M. F. Lo, M. K. Fung, S. L. Lai, Z. T. Liu, C. S. Lee, and S. T. Lee

Appl. Phys. Lett. 95, 203303 (2009); http://dx.doi.org/10.1063/1.3264966 (3 pages) | Cited 9 times

Online Publication Date: 18 November 2009

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While bulk heterojunctions (HJ) have been used in organic photovoltaic (OPV) devices, there are few studies on their interface electronics and mechanisms on device performance. Here, we studied the electronic structure of a mixed CuPc:C60 and a discrete CuPc/C60 junctions using photoemission spectroscopy. The HOMOCuPc-LUMOC60 energy offset, which controls the theoretical maximum open-circuit voltage (Voc), was increased from 0.64 to 1.13 eV by mixing CuPc with C60. This Voc increase is attributed to the underlying substrate work function and charge transfer between two molecules. The results provide an understanding of the Voc enhancement in OPV devices with bulk HJ.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
79.60.Jv Interfaces; heterostructures; nanostructures
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
FREE

Fully bendable polymer light emitting devices with carbon nanotubes as cathode and anode

Zhibin Yu, Liangbing Hu, Zhitian Liu, Mingliang Sun, Meiliang Wang, George Grüner, and Qibing Pei

Appl. Phys. Lett. 95, 203304 (2009); http://dx.doi.org/10.1063/1.3266869 (3 pages) | Cited 14 times

Online Publication Date: 19 November 2009

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Polymer light emitting devices were fabricated by roll lamination using single-walled carbon nanotubes as both anode and cathode. The devices exhibited a low turn-on voltage of 3.8 V, high brightness of 1400 cd/m2 at 10 V and maximum efficiency of 2.2 cd/A at 480 cd/m2. The devices are also highly transparent and exhibited very high flexibility. No failure was observed after bending the devices down to 2.5 mm radius.
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85.60.Jb Light-emitting devices
82.45.Yz Nanostructured materials in electrochemistry
82.45.Fk Electrodes
82.47.Jk Photoelectrochemical cells, photoelectrochromic and other hybrid electrochemical energy storage devices
82.45.Wx Polymers and organic materials in electrochemistry
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
FREE

Reduced hole injection barrier for achieving ultralow voltage polymer space-charge-limited transistor with a high on/off current ratio

Yu-Chiang Chao, Yi-Cheng Lin, Min-Zhi Dai, Hsiao-Wen Zan, and Hsin-Fei Meng

Appl. Phys. Lett. 95, 203305 (2009); http://dx.doi.org/10.1063/1.3261749 (3 pages) | Cited 5 times

Online Publication Date: 20 November 2009

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Vertical polymer space-charge limited transistor (SCLT) operated with an ultralow voltage is demonstrated. The influence of aging effect of the oxygen plasma treated indium tin oxide electrode on the hole injection barrier and on the transistor characteristics is investigated. By reducing the hole injection barrier, the on/off ratio as high as 104 is obtained at a collector to emitter voltage as low as −0.84 V. The low operation voltage is crucial to the development of low-power large-area polymer transistor array. Inverter characteristics are also demonstrated by connecting a SCLT with a load resistor.
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85.30.Tv Field effect devices
FREE

Observation of space-charge-limited current due to charge generation at interface of molybdenum dioxide and organic layer

Toshinori Matsushima and Hideyuki Murata

Appl. Phys. Lett. 95, 203306 (2009); http://dx.doi.org/10.1063/1.3267082 (3 pages) | Cited 14 times

Online Publication Date: 20 November 2009

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Current density-voltage characteristics of hole-only devices are influenced by thicknesses of molybdenum dioxide (MoO2) and molybdenum trioxide (MoO3) as buffer layers. A space-charge-limited current of N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (α-NPD) is observed in a wide range of MoO2 thicknesses from 0.25 to 10 nm and at a specific MoO3 thickness of 0.75 nm. Charge transfer characteristics at interfaces of MoO2/α-NPD and MoO3/α-NPD are investigated from changes in fluorescence intensity of α-NPD. Reasons of the improved device characteristics are discussed in terms of interfacial charge generation composed of charged transfer and charge separation.
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68.55.-a Thin film structure and morphology
68.65.Ac Multilayers
78.66.-w Optical properties of specific thin films
78.55.-m Photoluminescence, properties and materials
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Periodic response of fluidic networks with passive deformable features

Matthew R. Begley, Marcel Utz, Daniel C. Leslie, Hossein Haj-Hariri, James Landers, and Hilary Bart-Smith

Appl. Phys. Lett. 95, 203501 (2009); http://dx.doi.org/10.1063/1.3266064 (3 pages) | Cited 3 times

Online Publication Date: 16 November 2009

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This paper outlines the scaling parameters governing the frequency response of fluidic networks with embedded deformable features, which are subjected to periodic excitation. These parameters describe the impact of deformable feature properties on the relative importance of potential energy, kinetic energy, and viscous dissipation. They are used to identify device characteristics that produce specific frequency responses, such as low-pass, high-pass, and bandpass filters that exploit (or avoid) the effects of fluid inertia. Simulations illustrate that passive deformable diodes have little effect on the frequency response of high-pass filters comprised of elastomer features.
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47.85.Np Fluidics
84.30.Vn Filters
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
47.61.-k Micro- and nano- scale flow phenomena

Enhanced nonvolatile resistive switching in dilutely cobalt doped TiO2

Kashinath A. Bogle, Mukesh N. Bachhav, Meenal S. Deo, Nagarajan Valanoor, and Satishchandra B. Ogale

Appl. Phys. Lett. 95, 203502 (2009); http://dx.doi.org/10.1063/1.3263713 (3 pages) | Cited 6 times

Online Publication Date: 16 November 2009

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Incorporation of dilute concentration of dopant having a valence state different than that of the host cation enables controlled incorporation proximity vacancy defects for local charge balance. Since nonvolatile resistive switching is a phenomenon tied to such defects, it can be expected to be influenced by dilute doping. In this work, we demonstrate that enhanced nonvolatile resistive switching is realized in dilutely cobalt doped TiO2 films grown at room temperature. We provide essential characterizations and analyses. We suggest that the oxygen vacancies in the proximity of immobile dopants provide well distributed anchors for the development of systematic filamentary tracks.
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75.60.-d Domain effects, magnetization curves, and hysteresis
61.72.up Other materials
61.72.jd Vacancies

Origins of performance in fiber-based organic photovoltaics

Yuan Li, Wei Zhou, Dan Xue, Jiwen Liu, Eric D. Peterson, Wanyi Nie, and David L. Carroll

Appl. Phys. Lett. 95, 203503 (2009); http://dx.doi.org/10.1063/1.3263947 (3 pages) | Cited 5 times

Online Publication Date: 16 November 2009

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Using ray tracing and optical path iteration, we present a mathematical model for light transmission, absorption, and loss in fiber-based organic photovoltaics. Simulations based on this model give an optimum incident angle, position, and an optimum aspect ratio in terms of other parameters of the fiber photocell. Further, the predicted relationship between current generation and incident angle correlates well with experimental data for a given fiber length. Finally, we show that experimental results on current generation versus fiber diameter are well reproduced by our simulation for fiber diameters of the order of the wavelength of incident light.
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42.81.Dp Propagation, scattering, and losses; solitons
85.60.-q Optoelectronic devices
84.60.Jt Photoelectric conversion
42.15.Dp Wave fronts and ray tracing

The effects of processing of high-electron-mobility transistors on the strain state and the electrical properties of AlGaN/GaN structures

F. González-Posada Flores, C. Rivera, and E. Muñoz

Appl. Phys. Lett. 95, 203504 (2009); http://dx.doi.org/10.1063/1.3263955 (3 pages) | Cited 7 times

Online Publication Date: 16 November 2009

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The results of x-ray characterization presented in this work show that the strain state of the AlGaN and GaN layers is modified by the Ohmic contact deposition and subsequent annealing, as well as by the SiN passivation. In both cases, the tensile strain for the AlGaN layer decreases whereas the residual compressive strain in the GaN layer is consistently increased in the free-contact area. However, we show that the difference in the chemical composition of the surface is the main factor explaining the reduction of channel carrier concentration observed in capacitance-voltage measurements, with a variation as large as ∼ 2×1012 cm−2.
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85.30.Tv Field effect devices

Bipolar resistive switching in individual Au–NiO–Au segmented nanowires

Edward D. Herderick, Kongara M. Reddy, Rachel N. Sample, Thomas I. Draskovic, and Nitin P. Padture

Appl. Phys. Lett. 95, 203505 (2009); http://dx.doi.org/10.1063/1.3263733 (3 pages) | Cited 10 times

Online Publication Date: 17 November 2009

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Evidence for bipolar resistive switching is reported in individual metal-oxide-metal (MOM) nanowires in the system Au–NiO–Au, and a plausible mechanism for the same is presented. The MOM nanowire architecture may be well suited for much needed fundamental studies of resistive switching because it provides (i) high-quality end-on contacts, (ii) control over the dimensions of the oxide, (iii) ability to synthesize a very large number of nearly identical nanowires in a wide variety of MOM systems, and (iv) elimination of substrate-induced strain effects.
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73.40.Rw Metal-insulator-metal structures
73.63.Rt Nanoscale contacts
66.30.Qa Electromigration
61.72.jd Vacancies

Study of multi-ON states in nonvolatile memory based on metal-insulator-metal structure

Guanwen Yang, Hsiang-Yu Chen, Liping Ma, Yue Shao, and Yang Yang

Appl. Phys. Lett. 95, 203506 (2009); http://dx.doi.org/10.1063/1.3263155 (3 pages) | Cited 3 times

Online Publication Date: 17 November 2009

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Various mechanisms have been proposed to interpret switching effect in thermally evaporated organic memory devices. In this work, we demonstrate a nonvolatile memory device having tristates, one OFF state and two different ON states (lower-ON state, higher-ON state) in the metal-insulator-metal (MIM) structure. Detailed study has revealed that different switching mechanisms are responsible for these two stages of switching: filament formation is the dominant mechanism for switching from the OFF state to the lower ON state while Poole–Frenkel effect governs the switching from the lower-ON state to the higher-ON state.
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85.30.Tv Field effect devices

Telescopic hot double wall carbon nanotube for nanolithography

A. Popescu and L. M. Woods

Appl. Phys. Lett. 95, 203507 (2009); http://dx.doi.org/10.1063/1.3263954 (3 pages) | Cited 7 times

Online Publication Date: 19 November 2009

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A custom double wall carbon nanotube for thermal surface modification is proposed. By studying the heat transfer characteristics in the system, it is demonstrated that such a device is capable of producing high resolution patterns on a sample surface. A constant distance between the double wall carbon nanotube tip and the sample surface is maintained due to the van der Waals interactions without the need of an active feedback mechanism.
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81.16.Nd Micro- and nanolithography

Efficient inverted top-emitting organic light-emitting diodes using ultrathin MoO3/C60 bilayer structure to enhance hole injection

Jianhua Hou, Jiang Wu, Zhiyuan Xie, and Lixiang Wang

Appl. Phys. Lett. 95, 203508 (2009); http://dx.doi.org/10.1063/1.3267084 (3 pages) | Cited 8 times

Online Publication Date: 20 November 2009

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Efficient inverted top-emitting organic light-emitting diodes with aluminum (Al) as both the cathode and semitransparent anode are investigated. It is found that introduction of the ultrathin molybdenum trioxide (MoO3)/fullerene (C60) bilayer structure between the low work function Al top anode and the hole-transporting layer dramatically enhances the device performance as compared to the devices with sole MoO3 or C60 buffer layer. The ultraviolet photoemission spectroscopy and x-ray photoelectron spectroscopy indicate that the hole injection barrier between Al anode and hole-transporting layer is effectively reduced via strong dipole effect at Al/MoO3/C60 interfaces with its direction pointing from Al to C60.
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85.60.Jb Light-emitting devices
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Tomographic elastography of contracting skeletal muscles from their natural vibrations

Karim G. Sabra and Akibi Archer

Appl. Phys. Lett. 95, 203701 (2009); http://dx.doi.org/10.1063/1.3254834 (3 pages) | Cited 5 times

Online Publication Date: 16 November 2009

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Conventional elastography techniques require an external mechanical or radiation excitation to measure noninvasively the viscoelastic properties of skeletal muscles and thus monitor human motor functions. We developed instead a passive elastography technique using only an array of skin-mounted accelerometers to record the low-frequency vibrations of the biceps brachii muscle naturally generated during voluntary contractions and to determine their two-dimensional directionality. Cross-correlating these recordings provided travel-times measurements of these muscle vibrations between multiple sensor pairs. Travel-time tomographic inversions yielded spatial variations of their propagation velocity during isometric elbow flexions which indicated a nonuniform longitudinal stiffening of the biceps.
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87.85.Pq Biomedical imaging
87.85.G- Biomechanics
87.19.lu Motor systems: Locomotion, flight, vocalization
87.19.rd Elastic properties
87.19.rj Contraction
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