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16 Nov 2009

Volume 95, Issue 20, Articles (20xxxx)

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Appl. Phys. Lett. 95, 204101 (2009); http://dx.doi.org/10.1063/1.3238316 (3 pages)

Gengxin Zhang, Brandon Weeks, Richard Gee, and Amitesh Maiti
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Periodic response of fluidic networks with passive deformable features

Matthew R. Begley, Marcel Utz, Daniel C. Leslie, Hossein Haj-Hariri, James Landers, and Hilary Bart-Smith

Appl. Phys. Lett. 95, 203501 (2009); http://dx.doi.org/10.1063/1.3266064 (3 pages) | Cited 3 times

Online Publication Date: 16 November 2009

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This paper outlines the scaling parameters governing the frequency response of fluidic networks with embedded deformable features, which are subjected to periodic excitation. These parameters describe the impact of deformable feature properties on the relative importance of potential energy, kinetic energy, and viscous dissipation. They are used to identify device characteristics that produce specific frequency responses, such as low-pass, high-pass, and bandpass filters that exploit (or avoid) the effects of fluid inertia. Simulations illustrate that passive deformable diodes have little effect on the frequency response of high-pass filters comprised of elastomer features.
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47.85.Np Fluidics
84.30.Vn Filters
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
47.61.-k Micro- and nano- scale flow phenomena

Enhanced nonvolatile resistive switching in dilutely cobalt doped TiO2

Kashinath A. Bogle, Mukesh N. Bachhav, Meenal S. Deo, Nagarajan Valanoor, and Satishchandra B. Ogale

Appl. Phys. Lett. 95, 203502 (2009); http://dx.doi.org/10.1063/1.3263713 (3 pages) | Cited 6 times

Online Publication Date: 16 November 2009

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Incorporation of dilute concentration of dopant having a valence state different than that of the host cation enables controlled incorporation proximity vacancy defects for local charge balance. Since nonvolatile resistive switching is a phenomenon tied to such defects, it can be expected to be influenced by dilute doping. In this work, we demonstrate that enhanced nonvolatile resistive switching is realized in dilutely cobalt doped TiO2 films grown at room temperature. We provide essential characterizations and analyses. We suggest that the oxygen vacancies in the proximity of immobile dopants provide well distributed anchors for the development of systematic filamentary tracks.
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75.60.-d Domain effects, magnetization curves, and hysteresis
61.72.up Other materials
61.72.jd Vacancies

Origins of performance in fiber-based organic photovoltaics

Yuan Li, Wei Zhou, Dan Xue, Jiwen Liu, Eric D. Peterson, Wanyi Nie, and David L. Carroll

Appl. Phys. Lett. 95, 203503 (2009); http://dx.doi.org/10.1063/1.3263947 (3 pages) | Cited 5 times

Online Publication Date: 16 November 2009

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Using ray tracing and optical path iteration, we present a mathematical model for light transmission, absorption, and loss in fiber-based organic photovoltaics. Simulations based on this model give an optimum incident angle, position, and an optimum aspect ratio in terms of other parameters of the fiber photocell. Further, the predicted relationship between current generation and incident angle correlates well with experimental data for a given fiber length. Finally, we show that experimental results on current generation versus fiber diameter are well reproduced by our simulation for fiber diameters of the order of the wavelength of incident light.
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42.81.Dp Propagation, scattering, and losses; solitons
85.60.-q Optoelectronic devices
84.60.Jt Photoelectric conversion
42.15.Dp Wave fronts and ray tracing

The effects of processing of high-electron-mobility transistors on the strain state and the electrical properties of AlGaN/GaN structures

F. González-Posada Flores, C. Rivera, and E. Muñoz

Appl. Phys. Lett. 95, 203504 (2009); http://dx.doi.org/10.1063/1.3263955 (3 pages) | Cited 7 times

Online Publication Date: 16 November 2009

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The results of x-ray characterization presented in this work show that the strain state of the AlGaN and GaN layers is modified by the Ohmic contact deposition and subsequent annealing, as well as by the SiN passivation. In both cases, the tensile strain for the AlGaN layer decreases whereas the residual compressive strain in the GaN layer is consistently increased in the free-contact area. However, we show that the difference in the chemical composition of the surface is the main factor explaining the reduction of channel carrier concentration observed in capacitance-voltage measurements, with a variation as large as ∼ 2×1012 cm−2.
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85.30.Tv Field effect devices

Bipolar resistive switching in individual Au–NiO–Au segmented nanowires

Edward D. Herderick, Kongara M. Reddy, Rachel N. Sample, Thomas I. Draskovic, and Nitin P. Padture

Appl. Phys. Lett. 95, 203505 (2009); http://dx.doi.org/10.1063/1.3263733 (3 pages) | Cited 10 times

Online Publication Date: 17 November 2009

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Evidence for bipolar resistive switching is reported in individual metal-oxide-metal (MOM) nanowires in the system Au–NiO–Au, and a plausible mechanism for the same is presented. The MOM nanowire architecture may be well suited for much needed fundamental studies of resistive switching because it provides (i) high-quality end-on contacts, (ii) control over the dimensions of the oxide, (iii) ability to synthesize a very large number of nearly identical nanowires in a wide variety of MOM systems, and (iv) elimination of substrate-induced strain effects.
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73.40.Rw Metal-insulator-metal structures
73.63.Rt Nanoscale contacts
66.30.Qa Electromigration
61.72.jd Vacancies

Study of multi-ON states in nonvolatile memory based on metal-insulator-metal structure

Guanwen Yang, Hsiang-Yu Chen, Liping Ma, Yue Shao, and Yang Yang

Appl. Phys. Lett. 95, 203506 (2009); http://dx.doi.org/10.1063/1.3263155 (3 pages) | Cited 3 times

Online Publication Date: 17 November 2009

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Various mechanisms have been proposed to interpret switching effect in thermally evaporated organic memory devices. In this work, we demonstrate a nonvolatile memory device having tristates, one OFF state and two different ON states (lower-ON state, higher-ON state) in the metal-insulator-metal (MIM) structure. Detailed study has revealed that different switching mechanisms are responsible for these two stages of switching: filament formation is the dominant mechanism for switching from the OFF state to the lower ON state while Poole–Frenkel effect governs the switching from the lower-ON state to the higher-ON state.
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85.30.Tv Field effect devices

Telescopic hot double wall carbon nanotube for nanolithography

A. Popescu and L. M. Woods

Appl. Phys. Lett. 95, 203507 (2009); http://dx.doi.org/10.1063/1.3263954 (3 pages) | Cited 7 times

Online Publication Date: 19 November 2009

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A custom double wall carbon nanotube for thermal surface modification is proposed. By studying the heat transfer characteristics in the system, it is demonstrated that such a device is capable of producing high resolution patterns on a sample surface. A constant distance between the double wall carbon nanotube tip and the sample surface is maintained due to the van der Waals interactions without the need of an active feedback mechanism.
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81.16.Nd Micro- and nanolithography

Efficient inverted top-emitting organic light-emitting diodes using ultrathin MoO3/C60 bilayer structure to enhance hole injection

Jianhua Hou, Jiang Wu, Zhiyuan Xie, and Lixiang Wang

Appl. Phys. Lett. 95, 203508 (2009); http://dx.doi.org/10.1063/1.3267084 (3 pages) | Cited 8 times

Online Publication Date: 20 November 2009

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Efficient inverted top-emitting organic light-emitting diodes with aluminum (Al) as both the cathode and semitransparent anode are investigated. It is found that introduction of the ultrathin molybdenum trioxide (MoO3)/fullerene (C60) bilayer structure between the low work function Al top anode and the hole-transporting layer dramatically enhances the device performance as compared to the devices with sole MoO3 or C60 buffer layer. The ultraviolet photoemission spectroscopy and x-ray photoelectron spectroscopy indicate that the hole injection barrier between Al anode and hole-transporting layer is effectively reduced via strong dipole effect at Al/MoO3/C60 interfaces with its direction pointing from Al to C60.
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85.60.Jb Light-emitting devices
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