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Applied Physics Letters / Volume 95 / Issue 21 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 95, 213303 (2009); http://dx.doi.org/10.1063/1.3257979 (3 pages)

Solution-processed conjugated polymer organic p-i-n light-emitting diodes with high built-in potential by solution- and solid-state doping

Sankaran Sivaramakrishnan1, Mi Zhou1, Aravind C. Kumar1, Zhi-Li Chen1, Rui-Qi Png1, Lay-Lay Chua2,3, and Peter K. H. Ho1

1Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore S117542, Singapore
2Department of Chemistry, National University of Singapore, Lower Kent Ridge Road, Singapore S117543, Singapore
3Cavendish Laboratory, University of Cambridge, JJ Thomson Road, Cambridge, CB3 0HE, United Kingdom

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(Received 8 June 2009; accepted 7 September 2009; published online 24 November 2009)

Polymer p-i-n homojunction light-emitting diodes (LEDs) comprising p-doped poly(dioctylfluorene-alt-benzothiadiazole) (F8BT) hole-injection, intrinsic F8BT emitter, and n-doped F8BT electron-injection layers have been demonstrated. A thin F8BT film was photocrosslinked and bulk p-doped by nitronium oxidation, then overcoated with an F8BT layer which was then surface n-doped by contact printing with naphthalenide on an elastomeric stamp. These LEDs exhibit high built-in potential (Vbi = 2.2 V), efficient bipolar injection, and greatly improved external electroluminescence efficiency compared to control devices without the p-i-n structure. A modulated photocurrent technique was used to measure this Vbi, which systematically improves with diode structure.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

conducting polymers, electroluminescence, organic light emitting diodes, oxidation, photoconductivity, polarons, semiconductor doping

PACS

  • 85.60.Jb

    Light-emitting devices

  • 81.05.Lg

    Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3257979

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

  1. M. Pfeiffer, S. R. Forrest, X. Zhou, and K. Leo, Org. Electron. 4, 21 (2003)JAPIAU000089000009004986000001.
  2. K. Harada, A. G. Werner, M. Pfeiffer, C. J. Bloom, C. M. Elliott, and K. Leo, Phys. Rev. Lett. 94, 036601 (2005). [MEDLINE]
  3. T. Matsushima and C. Adachi, Appl. Phys. Lett. 89, 253506 (2006)APPLAB000089000025253506000001.
  4. K. Walzer, B. Maennig, M. Pfeiffer, and K. Leo, Chem. Rev. (Washington, D.C.) 107, 1233 (2007). [MEDLINE]
  5. G. Parthasarathy, C. Shen, A. Kahn, and S. R. Forrest, J. Appl. Phys. 89, 4986 (2001)JAPIAU000089000009004986000001.
  6. A. G. Werner, F. Li, K. Harada, M. Pfeiffer, T. Fritz, K. Leo, and S. Machill, Adv. Funct. Mater. 14, 255 (2004). [Inspec] [ISI]
  7. C. K. Chan, A. Kahn, Q. Zhang, S. Barlow, and S. R. Marder, J. Appl. Phys. 102, 014906 (2007)JAPIAU000102000001014906000001. [ISI]
  8. C. K. Chiang, S. C. Gau, C. R. Fincher, Jr., Y. W. Park, A. G. MacDiarmid, and A. J. Heeger, Appl. Phys. Lett. 33, 18 (1978)APPLAB000033000001000018000001.
  9. M. Lögdlund, R. Lazzaroni, S. Stafström, and W. R. Salaneck, Phys. Rev. Lett. 63, 1841 (1989). [ISI] [MEDLINE]
  10. M. Fahlman, D. Beljonne, M. Lögdlund, R. H. Friend, A. B. Holmes, J. L. Brédas, and W. R. Salaneck, Chem. Phys. Lett. 214, 327 (1993). [Inspec] [ISI]
  11. J. Hwang and A. Kahn, J. Appl. Phys. 97, 103705 (2005)JAPIAU000097000010103705000001. [ISI]
  12. K. H. Yim, G. L. Whiting, C. E. Murphy, J. J. M. Halls, J. H. Burroughes, R. H. Friend, and J. S. Kim, Adv. Mater. 20, 3319 (2008).
  13. P. K. H. Ho, S. Thomas, R. H. Friend, and N. Tessler, Science 285, 233 (1999). [MEDLINE]
  14. S. H. Khong, S. Sivaramakrishnan, R. Q. Png, L. Y. Wong, P. J. Chia, L. L. Chua, and P. K. H. Ho, Adv. Funct. Mater. 17, 2490 (2007).
  15. R. Q. Png, P. J. Chia, J. C. Tang, B. Liu, S. Sivaramakrishnan, M. Zhou, S. H. Khong, H. S. O. Chan, J. H. Burroughes, L. L. Chua, R. H. Friend, and P. K. H. Ho, “High-performace polymer semiconducting heterostructure devices by nitrene-mediated photocrosslinking of alkyl side-chains,” Nature Mater. (to be published).
  16. Y. S. Huang, S. Westenhoff, I. Avilov, P. Sreearunothai, J. M. Hodgkiss, C. Deleener, R. H. Friend, and D. Beljonne, Nature Mater. 7, 483 (2008). [MEDLINE]
  17. P. K. H. Ho, M. Granström, R. H. Friend, and N. C. Greenham, Adv. Mater. 10, 769 (1998). [Inspec] [ISI]
  18. M. Zhou, L. L. Chua, R. Q. Png, C. K. Yong, S. Sivaramakrishnan, P. J. Chia, A. T. S. Wee, R. H. Friend, and P. K. H. Ho, Phys. Rev. Lett. 103, 036601 (2009). [MEDLINE]
  19. J. S. Kim, R. H. Friend, I. Grizzi, and J. H. Burroughes, Appl. Phys. Lett. 87, 023506 (2005)APPLAB000087000002023506000001.
  20. N. Koch, ChemPhysChem 8, 1438 (2007). [MEDLINE]
  21. S. Braun, W. R. Salaneck, and M. Fahlman, Adv. Mater. 21, 1450 (2009).
  22. P. J. Chia, S. Sivaramakrishnan, M. Zhou, R. Q. Png, L. L. Chua, R. H. Friend, and P. K. H. Ho, Phys. Rev. Lett. 102, 096602 (2009). [MEDLINE]

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Figures (click on thumbnails to view enlargements)

FIG.1
Optical transmission spectra of the intrinsic and doped F8BT films on glass substrates. Chemical structure of F8BT is shown in the inset.

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FIG.2
Schematic of the fabrication of the p-i-n homojunction diode. All steps are conducted in the glovebox.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
jVL characteristics of the devices measured at room temperature.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.4
Built-in potential measurement of the devices by a modulated photocurrent technique at room temperature.

FIG.4 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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