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23 Nov 2009

Volume 95, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 95, 213501 (2009); http://dx.doi.org/10.1063/1.3265958 (3 pages)

S. Cibella, M. Ortolani, R. Leoni, G. Torrioli, L. Mahler, Ji-Hua Xu, A. Tredicucci, H. E. Beere, and D. A. Ritchie
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Epitaxial growth of (001)-oriented Ba0.5Sr0.5TiO3 thin films on a-plane sapphire with an MgO/ZnO bridge layer

Bo Xiao, Hongrui Liu, Vitaliy Avrutin, Jacob H. Leach, Emmanuel Rowe, Huiyong Liu, Ümit Özgür, Hadis Morkoç, W. Chang, L. M. B. Alldredge, S. W. Kirchoefer, and J. M. Pond

Appl. Phys. Lett. 95, 212901 (2009); http://dx.doi.org/10.1063/1.3266862 (3 pages) | Cited 9 times

Online Publication Date: 23 November 2009

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High quality (001)-oriented Ba0.5Sr0.5TiO3 (BST) thin films have been grown on a-plane sapphire (11math0) by rf magnetron sputtering using a double bridge layer consisting of (0001)-oriented ZnO (50 nm) and (001)-oriented MgO (10 nm) prepared by plasma-assisted molecular beam epitaxy. X-ray diffraction revealed the formation of three sets of in-plane BST domains, offset from one another by 30°, which is consistent with the in-plane symmetry of the MgO layer observed by in situ reflective high electron energy diffraction. The in-plane epitaxial relationship of BST, MgO, and ZnO has been determined to be BST [110]//MgO [110]//ZnO [11math0] and BST [110]/MgO [110]//ZnO [1math00]. Capacitance-voltage measurements performed on BST coplanar interdigitated capacitor structures revealed a high dielectric tunability of up to 84% at 1 MHz.
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68.55.-a Thin film structure and morphology
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
68.55.A- Nucleation and growth
81.15.Cd Deposition by sputtering

Characterization of the “clean-up” of the oxidized Ge(100) surface by atomic layer deposition

M. Milojevic, R. Contreras-Guerrero, M. Lopez-Lopez, J. Kim, and R. M. Wallace

Appl. Phys. Lett. 95, 212902 (2009); http://dx.doi.org/10.1063/1.3268449 (3 pages) | Cited 10 times

Online Publication Date: 24 November 2009

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While the “clean-up” effect on III-V substrates has recently been well documented interfacial reactions during atomic layer deposition (ALD) on Ge substrates are not fully explored. The “clean-up” of Ge oxides is studied by interrupting the ALD process following individual precursor pulses for in situ monochromatic x-ray photoelectron spectroscopy analysis. Germanium oxides are found to be reduced by TMA and water, while an interfacial GeON layer is only affected by the initial TMA pulse. Oxide free germanium surfaces behave analogously to a surface with initial native oxides since they are oxidized measurably prior to the first TMA pulse due to residual oxidants in a commercial ALD chamber.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Interaction of La2O3 capping layers with HfO2 gate dielectrics

M. Copel, S. Guha, N. Bojarczuk, E. Cartier, V. Narayanan, and V. Paruchuri

Appl. Phys. Lett. 95, 212903 (2009); http://dx.doi.org/10.1063/1.3268456 (3 pages) | Cited 13 times

Online Publication Date: 24 November 2009

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We report the effect of La2O3 capping layers on HfO2/SiO2/Si dielectrics, proposed for use in threshold voltage tuning of field effect transistors. Depth profiling with medium energy ion scattering shows that an initial surface layer of La2O3 diffuses through the HfO2 at elevated temperatures, ultimately converting some of the thin interfacial SiO2 into a silicate. Core-level photoemission measurements indicate that the additional band-bending induced by the La2O3 only appears after diffusion, and the added charge resides between the HfO2 and the substrate.
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77.55.-g Dielectric thin films
66.30.Ny Chemical interdiffusion; diffusion barriers
85.30.Tv Field effect devices
79.60.Jv Interfaces; heterostructures; nanostructures
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