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23 Nov 2009

Volume 95, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 95, 213501 (2009); http://dx.doi.org/10.1063/1.3265958 (3 pages)

S. Cibella, M. Ortolani, R. Leoni, G. Torrioli, L. Mahler, Ji-Hua Xu, A. Tredicucci, H. E. Beere, and D. A. Ritchie
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High electron mobility and low sheet resistance in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel heterostructure

S. Zhang, M. C. Li, Z. H. Feng, B. Liu, J. Y. Yin, and L. C. Zhao

Appl. Phys. Lett. 95, 212101 (2009); http://dx.doi.org/10.1063/1.3264961 (3 pages) | Cited 6 times

Online Publication Date: 23 November 2009

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High electron mobility and low sheet resistance were achieved in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel (DC) heterostructure. Two-dimensional electron gas (2DEG) of the DC heterostructure was divided into the double channels and the room-temperature mobility was increased to 1430 cm2/V s by reducing the 2DEG density in each channel, compared with low electron mobility (1090 cm2/V s) for lattice-matched AlInN/AlN/GaN single-channel heterostructure. It was found that the 2DEG mobility was limited by thickness of the AlN interlayer between the double channels. After the structure optimization, the room temperature electron mobility of the DC heterostructure reached 1570 cm2/V s with sheet resistance of 222 Ω/◻.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Fr Low-field transport and mobility; piezoresistance
73.63.Hs Quantum wells
73.21.Fg Quantum wells

Investigation on GaAs surface treated with dimethylaluminumhydride

Hong-Liang Lu, Xiao-Liang Wang, Masakazu Sugiyama, and Yukihiro Shimogaki

Appl. Phys. Lett. 95, 212102 (2009); http://dx.doi.org/10.1063/1.3268450 (3 pages) | Cited 3 times

Online Publication Date: 24 November 2009

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The reduction and removal of surface native oxides from as-degreased and HCl-treated GaAs substrates using dimethylaluminumhydride (DMAH) have been studied by x-ray photoelectron spectroscopy. It is revealed that higher oxide states are more easily removed from the GaAs surface after exposure to DMAH at 300 °C. Complete consumption of native oxides on HCl-treated GaAs surface has been realized with 10 s DMAH exposure. In addition, the metallization of the Al–O bonding with increase of DMAH exposure confirms the reduction of native oxides on GaAs.
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81.65.-b Surface treatments
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Type I/type II band alignment transition in strained PbSe/PbEuSeTe multiquantum wells

M. Simma, T. Fromherz, G. Bauer, and G. Springholz

Appl. Phys. Lett. 95, 212103 (2009); http://dx.doi.org/10.1063/1.3263722 (3 pages) | Cited 2 times

Online Publication Date: 24 November 2009

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Investigation of the optical transitions in tensily strained PbSe/PbEuSeTe multiquantum wells by differential transmission spectroscopy reveals a type I/type II band alignment transition due to strain-induced lowering of the band edge energies of the quantum wells. From the measured shifts of the optical transitions the optical deformation potentials of PbSe are obtained. This is crucial for realistic modeling of the electronic properties of strained PbSe heterostructures.
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73.21.Fg Quantum wells
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
71.20.Nr Semiconductor compounds

Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures

Dmitry Donetsky, Stefan P. Svensson, Leonid E. Vorobjev, and Gregory Belenky

Appl. Phys. Lett. 95, 212104 (2009); http://dx.doi.org/10.1063/1.3267103 (3 pages) | Cited 25 times

Online Publication Date: 24 November 2009

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Minority carrier lifetime and interband absorption in midinfrared range of spectra were measured in InAs/GaSb strained-layer superlattices (SLSs) grown by molecular beam epitaxy on GaSb substrates. The carrier lifetime in 200-period undoped 7 ML InAs/8 ML GaSb SLS with AlSb carrier confinement layers was determined by time-resolved photoluminescence (PL) and from analysis of PL response to sinwave-modulated excitation. Study of PL kinetics in frequency domain allowed for direct lifetime measurements with the excess carrier concentration level of 3.5×1015 cm−3. The minority carrier lifetime of 80 ns at T = 77 K was obtained from dependence of the carrier lifetime on excitation power.
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73.63.-b Electronic transport in nanoscale materials and structures
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.55.Cr III-V semiconductors
73.21.Cd Superlattices

Interfacial layer dependence on device property of high-κ TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness

W. B. Chen and Albert Chin

Appl. Phys. Lett. 95, 212105 (2009); http://dx.doi.org/10.1063/1.3265947 (3 pages) | Cited 11 times

Online Publication Date: 24 November 2009

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We have investigated the device property dependence of high dielectric-constant (high-κ) TiLaO epitaxial-Ge/Si n-type metal-oxide-semiconductor (n-MOS) capacitors on different GeO2 and SiO2 interfacial layers. Large capacitance density of 3.3 μF/cm2, small equivalent-oxide thickness (EOT) of 0.81 nm and small C-V hysteresis of 19 mV are obtained simultaneously for MOS capacitor using ultrathin SiO2 interfacial layer, while the device with ultrathin interfacial GeO2 shows inferior performance of larger 1.1 nm EOT and poor C-V hysteresis of 93 mV. From cross-sectional transmission electron microscopy, secondary ion mass spectroscopy, and x-ray photoelectron spectroscopy analysis, the degraded device performance using GeO2 interfacial layer is due to the severe Ge outdiffusion, thinned interfacial GeO2 and thicker gate dielectric after 550 °C rapid-thermal anneal.
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84.32.Tt Capacitors
79.60.Jv Interfaces; heterostructures; nanostructures
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Thermoelectric properties and anisotropic electronic band structure on the In4Se3−x compounds

Jong-Soo Rhyee, Eunseog Cho, Kyu Hyoung Lee, Sang Mock Lee, Sang Il Kim, Hyun-Sik Kim, Yong Seung Kwon, and Sung Jin Kim

Appl. Phys. Lett. 95, 212106 (2009); http://dx.doi.org/10.1063/1.3266579 (3 pages) | Cited 20 times

Online Publication Date: 25 November 2009

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We report the high thermoelectric figure-of-merit (ZT) on the Se-deficient polycrystalline compounds of In4Se3−x (0.02 ≤ x ≤ 0.5) and the anisotropic electronic band structure. The Se-deficiency (x) has the effect of decreasing the semiconducting band gap and increasing the power factor. The band structure calculation for In4Se3−x (x = 0.25) exhibits localized hole bands at the Γ-point and Y-S symmetry line, whereas the significant electronic band dispersion is observed along the c-axis. Here, we propose that the high ZT values on those compounds are originated from the anisotropic electronic band structure as well as Peierls distortion.
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72.20.Pa Thermoelectric and thermomagnetic effects
71.20.Nr Semiconductor compounds
71.45.Lr Charge-density-wave systems
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