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23 Nov 2009

Volume 95, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 95, 213501 (2009); http://dx.doi.org/10.1063/1.3265958 (3 pages)

S. Cibella, M. Ortolani, R. Leoni, G. Torrioli, L. Mahler, Ji-Hua Xu, A. Tredicucci, H. E. Beere, and D. A. Ritchie
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Difference between penetration and damping lengths in photonic crystal mirrors

C. Sauvan, J. P. Hugonin, and P. Lalanne

Appl. Phys. Lett. 95, 211101 (2009); http://dx.doi.org/10.1063/1.3266840 (3 pages) | Cited 3 times

Online Publication Date: 23 November 2009

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Different mirror geometries in two-dimensional photonic crystal slabs are studied with fully vectorial calculations. We compare their optical properties and, in particular, we show that, for heterostructure mirrors, the penetration length associated with the delay induced by distributed reflection is not correlated with the characteristic damping length of the electromagnetic energy distribution in the mirror. This unexpected result evidences that the usual trade-off between short damping lengths and large penetration lengths that is classically encountered in distributed Bragg reflectors can be overcome with carefully designed photonic crystal structures.
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42.79.Bh Lenses, prisms and mirrors
42.15.Eq Optical system design
42.70.Qs Photonic bandgap materials

Ultrafast carrier mobilities in high-resistivity iron-doped Ga0.69In0.31As photoconducting antennas

Suranjana Sengupta, Ingrid Wilke, and Partha. S. Dutta

Appl. Phys. Lett. 95, 211102 (2009); http://dx.doi.org/10.1063/1.3265734 (3 pages)

Online Publication Date: 23 November 2009

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We report measurements of terahertz (THz) frequency radiation pulses emitted by photoconducting (PC) antennas fabricated from high-resistivity Fe-doped Ga0.69In0.31As. The Ga0.69In0.31As:Fe was grown using a hybrid vertical Bridgman and gradient freezing directional solidification process. GaxIn1−xAs crystals were uniformly doped with Fe atoms to obtain high-resistivity ( ∼ 107 Ω cm). The ultrafast carrier mobility in this material is about three orders of magnitude higher than in GaxIn1−xAs thin films grown by molecular beam epitaxy. The bandgap of Ga0.69In0.31As:Fe is low enough ( ∼ 1 eV) to use compact Yb-based multiwatt lasers operating at 1.1 μm for photoexcitation of Ga0.69In0.31As based PC antennas for high power THz emission.
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73.61.Ey III-V semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance
81.05.Ea III-V semiconductors
81.10.Fq Growth from melts; zone melting and refining
84.40.Ba Antennas: theory, components and accessories
61.72.U- Doping and impurity implantation
72.40.+w Photoconduction and photovoltaic effects

Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes

M.-H. Lo, P.-M. Tu, C.-H. Wang, Y.-J. Cheng, C.-W. Hung, S.-C. Hsu, H.-C. Kuo, H.-W. Zan, S.-C. Wang, C.-Y. Chang, and C.-M. Liu

Appl. Phys. Lett. 95, 211103 (2009); http://dx.doi.org/10.1063/1.3266859 (3 pages) | Cited 4 times

Online Publication Date: 24 November 2009

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A defect selective passivation method to block the propagation of threading dislocations in GaN epitaxial growth is demonstrated. The defect selective passivation is done by using defect selective chemical etching to locate defect sites, followed by silicon oxide passivation of the etched pits, and epitaxial over growth. The threading dislocation density in the regrown epilayer is significantly improved from 1×109 to 4×107 cm−2. The defect passivated epiwafer is used to grow light emitting diode and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.
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85.60.Jb Light-emitting devices
81.65.Rv Passivation

High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes

Lei Wang, Rui Li, Ziwen Yang, Ding Li, Tao Yu, Ningyang Liu, Lei Liu, Weihua Chen, and Xiaodong Hu

Appl. Phys. Lett. 95, 211104 (2009); http://dx.doi.org/10.1063/1.3266866 (3 pages) | Cited 8 times

Online Publication Date: 24 November 2009

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Spontaneous emission property of an asymmetrically graded 480 nm InGaN/GaN quantum well (QW) is investigated via k⋅p theory. Comparing to rectangular QW, band profiles of the graded QW change into parabolalike due to the variation of internal piezoelectric field along the growth direction, and the spontaneous emission rates of the graded QW are three times larger than rectangular case under various carrier densities. This can be attributed to the fact that the graded QW has much larger matrix element (Me)nmσ(kt) than rectangular QW considering that the wave function overlap of the graded QW is less affected by the quantum confined Stark effect.
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85.60.Jb Light-emitting devices
78.67.De Quantum wells
72.20.-i Conductivity phenomena in semiconductors and insulators

Tunable long-range surface plasmon polaritons taking advantage of nonlinear surface waves

Weiwei Shao, Lin Li, Weiwu Liu, Tianhao Zhang, Huihui Ma, Jingjun Xu, and Jianguo Tian

Appl. Phys. Lett. 95, 211105 (2009); http://dx.doi.org/10.1063/1.3267052 (3 pages) | Cited 2 times

Online Publication Date: 24 November 2009

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We present an improved Kretschmann configuration with nonlinear dielectric as substrate, in which long-range surface plasmon polaritons (SPPs) may appear, the modes and propagation lengths are tunable. We numerically simulated the solutions of SPP modes and their propagations. The results show that the SPP propagation length can range from tens of micrometers to tens of centimeters or even longer. The configuration proposed in this letter makes a breakthrough of the intrinsic restriction in conventional Kretschmann configuration and there exist the continuous steady SPP modes also in the range of k0ε31/2>β>k0ε11/2. It allows for optimization of SPP properties and makes SPP application more flexible in practices.
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71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

High-speed tuning of visible laser wavelength using a nanoimprinted grating optical tunable filter

Nien-Tsu Huang, Steven C. Truxal, Yi-Chung Tung, Amy Hsiao, Shuichi Takayama, and Katsuo Kurabayashi

Appl. Phys. Lett. 95, 211106 (2009); http://dx.doi.org/10.1063/1.3267083 (3 pages)

Online Publication Date: 24 November 2009

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We report on a microelectromechanical tunable optical filter incorporating strain-tunable nanoimprinted elastomeric grating with a pitch varied by 18%. This device enables tuning of optical fiber-guided laser wavelength between λ = 473 and 532 nm within 0.5 ms by mechanically modulating the pitch with a silicon microactuator. We also demonstrate the use of the device for obtaining two-color images of live/dead-stained cells with the color intensity ratio varied by the actuator voltage applied. The small structure of the device integrated on a silicon chip may be used in portable systems for optical switching and spectroscopy.
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42.55.Wd Fiber lasers
42.79.Ci Filters, zone plates, and polarizers
42.79.Dj Gratings
42.65.-k Nonlinear optics

Electrically driven ultraviolet lasing behavior from phosphorus-doped p-ZnO nanonail array/n-Si heterojunction

Jun-Yan Zhang, Qi-Feng Zhang, Tian-Song Deng, and Jin-Lei Wu

Appl. Phys. Lett. 95, 211107 (2009); http://dx.doi.org/10.1063/1.3268438 (3 pages) | Cited 19 times

Online Publication Date: 25 November 2009

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Electrically driven ultraviolet lasing behavior from p-ZnO:P nanonail array/n-Si heterojunction was demonstrated. Phosphorus-doped ZnO nanonail arrays were grown by chemical vapor deposition method. The constructed heterojunction with indium tin oxide films as the contacted electrodes demonstrated clear rectifying behavior, and the turn-on voltage was about 2.5 V. The p-n junction lowered the excitation threshold effectively and the electrically driven ultraviolet lasing behavior exhibited high monochromaticity: when the applied forward current reached 24 mA, distinct ultraviolet laser emission peaks were obtained at room temperature, and the full width at half maxims were 0.7, 0.9, and 0.5 nm, respectively. The three sharp peaks represented different lasing modes.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.16.-c Methods of micro- and nanofabrication and processing
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.40.Ei Rectification
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