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23 Nov 2009

Volume 95, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 95, 213501 (2009); http://dx.doi.org/10.1063/1.3265958 (3 pages)

S. Cibella, M. Ortolani, R. Leoni, G. Torrioli, L. Mahler, Ji-Hua Xu, A. Tredicucci, H. E. Beere, and D. A. Ritchie
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Vertically aligned ZnO nanostructures grown on graphene layers

Yong-Jin Kim, Jae-Hyun Lee, and Gyu-Chul Yi

Appl. Phys. Lett. 95, 213101 (2009); http://dx.doi.org/10.1063/1.3266836 (3 pages) | Cited 34 times

Online Publication Date: 24 November 2009

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We report the vertical growth of ZnO nanostructures on graphene layers and their photoluminescence (PL) characteristics. ZnO nanostructures were grown vertically on the graphene layers using catalyst-free metal-organic vapor-phase epitaxy. The surface morphology of the ZnO nanostructures on the graphene layers depended strongly on the growth temperature. Further, interesting growth behavior leading to the formation of aligned ZnO nanoneedles in a row and vertically aligned nanowalls was also observed and explained in terms of enhanced nucleation on graphene step edges and kinks. Additionally, the optical characteristics and carbon incorporation into ZnO were investigated using variable-temperature PL spectroscopy.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
61.46.-w Structure of nanoscale materials
68.35.bg Semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Et II-VI semiconductors
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Emission properties of Ag/dielectric/Ag plasmonic thermal emitter with different lattice type, hole shape, and dielectric material

Yi-Tsung Chang, Yi-Tin Wu, Jheng-Han Lee, Hung-Hsin Chen, Chun-Yuan Hsueh, Hao-Fu Huang, Yu-Wei Jiang, Pei-En Chang, and Si-Chen Lee

Appl. Phys. Lett. 95, 213102 (2009); http://dx.doi.org/10.1063/1.3266868 (3 pages) | Cited 7 times

Online Publication Date: 24 November 2009

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The emission spectra of the trilayer Ag/dielectric/Ag plasmonic thermal emitter (PTE) with different lattice type, hole shape, and dielectric material were investigated. It is found that the position and number of thermal emission peak of the PTE are determined by the lattice type not by the hole shape and dielectric materials. The PTE with hexagonal lattice generates only one strong (1,0) Ag/dielectric emission peak, whereas a similar PTE with square lattice generates two strong (1,0) and (1,1) Ag/dielectric emission peaks, their relative intensities follow the blackbody radiation law. This phenomenon suggests the coupling of Ag/dielectric and Ag/air modes.
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79.60.Jv Interfaces; heterostructures; nanostructures
63.22.Np Layered systems
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials

A computational study of tunneling-percolation electrical transport in graphene-based nanocomposites

Jeremy Hicks, Ashkan Behnam, and Ant Ural

Appl. Phys. Lett. 95, 213103 (2009); http://dx.doi.org/10.1063/1.3267079 (3 pages) | Cited 9 times

Online Publication Date: 24 November 2009

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Using a tunneling-percolation model and Monte Carlo simulations, we study the resistivity of graphene-based nanocomposites as a function of both graphene sheet and device parameters. We observe an inverse power law dependence of resistivity on device dimensions and volume fraction near the percolation threshold, and find that high aspect ratio graphene sheets result in a much lower resistivity, particularly at low sheet densities. Furthermore, we find that graphene sheet area affects nanocomposite resistivity more strongly than sheet density does. These results impart important fundamental insights for future experimental investigations and applications of graphene-based conductive nanocomposites.
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73.61.Wp Fullerenes and related materials
73.40.Gk Tunneling
61.46.-w Structure of nanoscale materials
61.48.Gh Structure of graphene

Tailoring light emission properties of organic emitter by coupling to resonance-tuned silver nanoantenna arrays

Teng Qiu, Fan Kong, Xiaoqiang Yu, Wenjun Zhang, Xianzhong Lang, and Paul K. Chu

Appl. Phys. Lett. 95, 213104 (2009); http://dx.doi.org/10.1063/1.3269190 (3 pages) | Cited 10 times

Online Publication Date: 25 November 2009

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A convenient nanotechnique is reported to tailor the light emission properties of organic emitter poly[2-methoxy-5-(2′-ethyl-hexyloxy)-p-phenylene vinylene] (MEH-PPV) by coupling to resonance-tuned silver nanoantenna arrays. It is revealed experimentally and theoretically that the enhanced photoluminescence from the MEH-PPV/silver nanoantenna complex may originate from the energy transfer effect in the surface plasmon resonance coupling between the MEH-PPV and silver nanocaps and from local electromagnetic field enhancement of nanogaps between the silver nanocaps in the background of the light-emitting MEH-PPV. The results are corroborated by the finite difference time domain simulation results.
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78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
78.55.-m Photoluminescence, properties and materials
73.22.Lp Collective excitations
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.16.-c Methods of micro- and nanofabrication and processing

Grain size dependence of electrical and optical properties in Nb-doped anatase TiO2

J. Y. Yang, W. S. Li, H. Li, Y. Sun, R. F. Dou, C. M. Xiong, L. He, and J. C. Nie

Appl. Phys. Lett. 95, 213105 (2009); http://dx.doi.org/10.1063/1.3266867 (3 pages) | Cited 8 times

Online Publication Date: 25 November 2009

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Anatase thin films of pure TiO2 and 6% niobium doped TiO2 (Nb:TiO2) were fabricated on LaAlO3(100) by pulsed laser deposition. The electrical properties of Nb:TiO2 films are grain-size dependent, i.e., the larger grain size, the higher conductivity, and mobility. For all TiO2 and for Nb:TiO2 with small mean grain size (d<15 nm), the band gap energy is found to increase systematically with the decrease in d, which is consistent with the quantum confinement model. For the films with large mean grain size (d>15 nm), particularly, a blueshift in Nb:TiO2 is governed by the Burstein–Moss effect.
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78.66.-w Optical properties of specific thin films
73.61.-r Electrical properties of specific thin films
81.15.Fg Pulsed laser ablation deposition

Robust localized modes in bilayer graphene induced by an antisymmetric kink potential

J. C. Martinez, M. B. A. Jalil, and S. G. Tan

Appl. Phys. Lett. 95, 213106 (2009); http://dx.doi.org/10.1063/1.3263150 (3 pages) | Cited 3 times

Online Publication Date: 25 November 2009

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When bilayer graphene is gated with a kink potential, pair particle localization occurs at the kink where a particle (electron) and its chiral partner (hole) are held in balance by electrostatic coupling. Zero-energy states (zero modes) are always present in pairs and occur at the same point in the dispersion graph, regardless of kink strength. The robust and binary nature of the kink-induced modes, which are topologically protected against disorder, and the ease with which a kink is created suggest applications in switching devices or information storage.
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63.22.Rc Phonons in graphene
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