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Applied Physics Letters / Volume 95 / Issue 23 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 95, 231104 (2009); http://dx.doi.org/10.1063/1.3271182 (3 pages)

Nonradiative recombination in 1.56 μm GaInNAsSb/GaNAs quantum-well lasers

J. W. Ferguson1, P. M. Smowton1, P. Blood1, H. Bae2, T. Sarmiento2, and J. S. Harris, Jr.2

1Cardiff School of Physics and Astronomy, Cardiff University, Queens Buildings, Cardiff CF24 3AA, United Kingdom
2Solid State and Photonics Laboratory, Stanford University, Stanford, California 94305, USA

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(Received 18 August 2009; accepted 12 November 2009; published online 8 December 2009)

We have shown experimentally that in GaInNAsSb/GaAs quantum-well lasers there are significant nonradiative contributions to threshold current from the barriers and the well. By matching a simulation to the experiment we find that Auger recombination in the barriers is very weak, due to the low carrier density. Shockley–Read–Hall recombination is the dominant source of nonradiative current, with the barriers making the major contribution, possibly due to their higher defect density than the wells. This suggests that significant improvements could be made by optimizing growth conditions and layer design, with particular attention to the barrier.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

Auger effect, electron-hole recombination, gallium compounds, III-V semiconductors, indium compounds, quantum well lasers, wide band gap semiconductors

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

  • 42.60.By

    Design of specific laser systems

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3271182

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    J. D. Thomson, I. A. Pope, P. M. Smowton, P. Blood, R. J. Lynch, G. Hill, T. Wang, and P. Parbrook, J. Appl. Phys. 99, 024507 (2006)JAPIAU000099000002024507000001.

    L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, Z. Rao, and J. S. Harries, Jr., J. Appl. Phys. 97, 083101 (2005)JAPIAU000097000008083101000001.


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