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Applied Physics Letters / Volume 95 / Issue 23 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 95, 231107 (2009); http://dx.doi.org/10.1063/1.3271999 (3 pages)

Relaxation characteristics of quantum-dash-based semiconductor lasers

Thomas Erneux1, Evgeny A. Viktorov1, Paul Mandel1, Sheherazade Azouigui2, and Abderrahim Ramdane2

1Optique Nonlinéaire Théorique, Université Libre de Bruxelles, Campus Plaine, Code Postal 231, 1050 Bruxelles, Belgium
2CNRS, Laboratoire de Photonique et de Nanostructures, route de Nozay, 91460 Marcoussis, France

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(Received 30 July 2009; accepted 16 November 2009; published online 8 December 2009)

We analyze the relaxation dynamics of quantum dot/dash lasers in terms of the energy exchange between the ground state and the wetting layer. We consider the case where both capture and escape times are of the same order of magnitude and determine the relaxation oscillation frequency and its damping rate. We show that the escape process may significantly affect the modulation characteristics and the tolerance to optical feedback.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

ground states, laser beams, laser feedback, optical modulation, quantum dash lasers, relaxation, wetting

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.Jf

    Beam characteristics: profile, intensity, and power; spatial pattern formation

  • 42.60.Fc

    Modulation, tuning, and mode locking

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3271999

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    T. Erneux, E. A. Viktorov, and P. Mandel, Phys. Rev. A 76, 023819 (2007).

    G. Moreau, S. Azouigui, D. -Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, Appl. Phys. Lett. 89, 241123 (2006)APPLAB000089000024241123000001.

    S. C. Heck, S. B. Healy, S. Osborne, E. P. O'Reilly, F. Lelarge, F. Poingt, A. Accard, F. Pommereau, O. L. Gouezigou, and B. Dagens, Appl. Phys. Lett. 92, 251105 (2008)APPLAB000092000025251105000001.

    A. Martinez, K. Merghem, S. Bouchoule, G. Moreau, A. Ramdane, J. -G. Provost, F. Alexandre, F. Grillot, O. Dehaese, R. Piron, and S. Loualiche, Appl. Phys. Lett. 93, 021101 (2008)APPLAB000093000002021101000001.


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