Excitation wavelength independent sensitized Er3+ concentration in as-deposited and low temperature annealed Si-rich SiO2 films

Savchyn, Oleksandr; Todi, Ravi M.; Coffey, Kevin R.; Ono, Luis K.; Cuenya, Beatriz Roldan; Kik, Pieter G.

doi:doi:10.1063/1.3272271

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Optical phase recovery in the dispersive Fourier transform

The dispersive Fourier transform permits real-time acquisition of optical spectra with analog-to-digital converters. The method utilizies the property that a signal’s temporal envelope matches its spectral profile if sufficiently dispersed. Unfortunately, the dispersion demand can be substantial and signal losses in highly dispersive elements represent a significant challenge, especially outside the telecommunications band. We address this problem by experimentally demonstrating that a time-dom...

Near infrared long-persistent phosphorescence in SrAl₂O₄:Eu²⁺,Dy³⁺,Er³⁺ phosphors based on persistent energy transfer

Eu2+, Dy3+, and Er3+ ions codoped SrAl2O4 phosphors with near infrared (NIR) (at 1530 nm) long-persistent phosphorescence were synthesized by a combustion method. The NIR phosphorescence emission was realized through a persistent energy transfer process from Eu2+ ions to Er3+ ions. Optimal Er3+ concentration for the maximum energy transfer efficiency was determined and NIR phosphorescence persisting for more than 10 min was achieved. A model of charge trapping and energy transfer process among ...

Erbium sensitization is observed in as-deposited Er³⁺ doped Si-rich SiO₂, ruling out the involvement of Si nanocrystals in the Er³⁺ excitation in these samples. The Er³⁺ excitation cross section in this material is similar within a factor 3 to that of samples annealed at 600 °C under 355 and 532 nm excitation. The density of sensitized Er³⁺ ions is shown to be excitation wavelength independent, while the shape of the Er³⁺ excitation spectra is governed by a wavelength dependent Er³⁺ excitation cross section. These findings enable the use of a broad range of wavelengths for the efficient excitation of this gain medium.

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KEYWORDS and PACS

Keywords

annealing, doping profiles, erbium, photoluminescence, silicon compounds

PACS

78.66.Nk

Insulators
78.55.Hx

Other solid inorganic materials
61.72.sd

Impurity concentration
81.40.Ef

Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

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http://dx.doi.org/10.1063/1.3272271

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0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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