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Applied Physics Letters / Volume 95 / Issue 23 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 95, 231901 (2009); http://dx.doi.org/10.1063/1.3268472 (3 pages)

Defect kinetics and dopant activation in submicrosecond laser thermal processes

K. Huet1, G. Fisicaro2,3, J. Venturini1, H. Besaucèle1, and A. La Magna3

1Excico, 13-21 Quai des Grésillons, 92230 Gennevilliers, France
2Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia, 64, I-95123 Catania, Italy
3CNR-IMM Sezione Catania, Stradale Primosole 50, I-95121 Catania, Italy

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(Received 4 August 2009; accepted 26 October 2009; published online 7 December 2009)

Defect evolution in ion implanted c-Si at the submicrosecond time scales during a laser thermal annealing process is investigated by means of kinetic simulations. Nonmelting, melting, and partial melting regimes are simulated. Our modeling considers irradiation, heat diffusion, and phase transition together with defect diffusion, annihilation, and clustering. The reduction in the implantation damage and its reorganization in defect aggregates are studied as a function of the process conditions. The approach is applied to double implanted Si and compared to experimental data, indicating a relationship between damage reduction and dopant activation.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

aggregates (materials), elemental semiconductors, ion implantation, laser beam annealing, melting, phase transformations, semiconductor doping, silicon, thermal diffusion

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3268472

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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