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Appl. Phys. Lett. 95, 231904 (2009); http://dx.doi.org/10.1063/1.3269605 (3 pages)
Improving microstructural quality of semipolar (11
2) GaN on m-plane sapphire by a two-step growth process
Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA
(Received 22 September 2009; accepted 3 November 2009; published online 7 December 2009)
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Add to Facebook2) GaN on nitridized m-plane sapphire. The two-step growth of (112) GaN, islanding growth under high pressure followed by islands coalescence under low pressure, went through a roughening-recovery process, which was found very effective in reducing the density of stacking faults and dislocations in (112) GaN. The x-ray rocking curves of both on-axis and off-axis planes were narrowed down by more than 50%. The improvement of GaN quality was confirmed by a boost in blue and green optical output of semipolar (112) InGaN/GaN quantum wells.© 2009 American Institute of Physics
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KEYWORDS and PACS
Keywords
dislocation density, gallium compounds, III-V semiconductors, indium compounds, island structure, MOCVD, rough surfaces, semiconductor growth, semiconductor quantum wells, stacking faults, wide band gap semiconductors
PACS
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III-V semiconductors
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Stacking faults and other planar or extended defects
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Quantum wells
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Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
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Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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Interface structure and roughness
ARTICLE DATA
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M. A. Moram, C. F. Johnston, J. L. Hollander, M. J. Kappers, and C. J. Humphreys, J. Appl. Phys. 105, 113501 (2009)JAPIAU000105000011113501000001.
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