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Applied Physics Letters / Browse Journal / Volume 95 / Issue 23 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 95, 231907 (2009); doi:10.1063/1.3265916 (3 pages)

Low temperature growth of epitaxial graphene on SiC induced by carbon evaporation

A. Al-Temimy, C. Riedl, and U. Starke

Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany Map This map

(Received 19 October 2009; accepted 28 October 2009; published online 8 December 2009)

Low temperature growth of epitaxial graphene on SiC is facilitated by carbon evaporation under ultrahigh vacuum (UHV) conditions. By counteracting the need for complete Si depletion as in the conventional sublimation method, monolayer graphene evolves at significantly lower temperatures by depositing additional carbon, so that a degradation of the initial SiC surface quality can be avoided. The original, well ordered terrace structure of SiC(0001) is preserved, the graphene layers grow on top and show the typical linear π-band dispersion. On SiC(000math) the graphene lattice is rotated by 30° in comparison to the conventional UHV preparation method.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

carbon, epitaxial growth, graphene, monolayers, vacuum deposition

PACS

  • 68.55.A-

    Nucleation and growth

  • 81.15.-z

    Methods of deposition of films and coatings; film growth and epitaxy

  • 78.40.Ri

    Fullerenes and related materials

  • 61.48.Gh

    Structure of graphene

ARTICLE DATA

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http://link.aip.org/link/APPLAB/v95/i23/p231907/s1

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

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