APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 95 / Issue 23 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 95, 231907 (2009); http://dx.doi.org/10.1063/1.3265916 (3 pages)

Low temperature growth of epitaxial graphene on SiC induced by carbon evaporation

A. Al-Temimy, C. Riedl, and U. Starke

Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany

View MapView Map

(Received 19 October 2009; accepted 28 October 2009; published online 8 December 2009)

Low temperature growth of epitaxial graphene on SiC is facilitated by carbon evaporation under ultrahigh vacuum (UHV) conditions. By counteracting the need for complete Si depletion as in the conventional sublimation method, monolayer graphene evolves at significantly lower temperatures by depositing additional carbon, so that a degradation of the initial SiC surface quality can be avoided. The original, well ordered terrace structure of SiC(0001) is preserved, the graphene layers grow on top and show the typical linear π-band dispersion. On SiC(000math) the graphene lattice is rotated by 30° in comparison to the conventional UHV preparation method.

© 2009 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

carbon, epitaxial growth, graphene, monolayers, vacuum deposition

PACS

  • 68.55.A-

    Nucleation and growth

  • 81.15.-z

    Methods of deposition of films and coatings; film growth and epitaxy

  • 78.40.Ri

    Fullerenes and related materials

  • 61.48.Gh

    Structure of graphene

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3265916

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    C. Riedl, U. Starke, J. Bernhardt, M. Franke, and K. Heinz, Phys. Rev. B 76, 245406 (2007).

    C. Riedl, A. A. Zakharov, and U. Starke, Appl. Phys. Lett. 93, 033106 (2008)APPLAB000093000003033106000001.

    C. Virojanadara, M. Syväjarvi, R. Yakimova, L. I. Johansson, A. A. Zakharov, and T. Balasubramanian, Phys. Rev. B 78, 245403 (2008).

    U. Starke, J. Schardt, J. Bernhardt, M. Franke, and K. Heinz, Phys. Rev. Lett. 82, 2107 (1999).

    J. Bernhardt, J. Schardt, U. Starke, and K. Heinz, Appl. Phys. Lett. 74, 1084 (1999)APPLAB000074000008001084000001.

    F. Hiebel, P. Mallet, F. Varchon, L. Magaud, and J. -Y. Veuillen, Phys. Rev. B 78, 153412 (2008).

    K. V. Emtsev, F. Speck, T. Seyller, L. Ley, and J. D. Riley, Phys. Rev. B 77, 155303 (2008).


Figures (3)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Low temperature growth of epitaxial graphene on SiC induced by carbon evaporation
  2. Low voltage blue-phase liquid crystal displays
  3. Frustration driven stripe domain formation in Co/Pt multilayer films
  4. First-principles studies of the effect of oxygen vacancies on the electronic structure and linear optical response of multiferroic BiFeO3
  5. Size-effects on the optical properties of zirconium oxide thin films
Go to AIP Home
Copyright © American Institute of Physics
close