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Appl. Phys. Lett. 95, 231907 (2009); http://dx.doi.org/10.1063/1.3265916 (3 pages)

Low temperature growth of epitaxial graphene on SiC induced by carbon evaporation

A. Al-Temimy, C. Riedl, and U. Starke

Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany

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(Received 19 October 2009; accepted 28 October 2009; published online 8 December 2009)

Low temperature growth of epitaxial graphene on SiC is facilitated by carbon evaporation under ultrahigh vacuum (UHV) conditions. By counteracting the need for complete Si depletion as in the conventional sublimation method, monolayer graphene evolves at significantly lower temperatures by depositing additional carbon, so that a degradation of the initial SiC surface quality can be avoided. The original, well ordered terrace structure of SiC(0001) is preserved, the graphene layers grow on top and show the typical linear π-band dispersion. On SiC(000math) the graphene lattice is rotated by 30° in comparison to the conventional UHV preparation method.

© 2009 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 68.55.A-

    Nucleation and growth

  • 81.15.-z

    Methods of deposition of films and coatings; film growth and epitaxy

  • 78.40.Ri

    Fullerenes and related materials

  • 61.48.Gh

    Structure of graphene

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
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