The origin and evolution of V-defects in InxAl1−xN epilayers grown by metalorganic chemical vapor deposition

Miao, Z. L.; Yu, T. J.; Xu, F. J.; Song, J.; Huang, C. C.; Wang, X. Q.; Yang, Z. J.; Zhang, G. Y.; Zhang, X. P.; Yu, D. P.; Shen, B.

doi:doi:10.1063/1.3272017

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Jerky elasticity: Avalanches and the martensitic transition in Cu_74.08Al_23.13Be_2.79 shape-memory alloy

Jerky elasticity was observed by dynamical mechanical analyzer measurements in a single crystal of the shape memory alloy Cu74.08Al23.13Be2.79. Jerks appear as spikes in the dissipation of the elastic response function and relate to the formation of avalanches during the transformation between the austenite and the martensite phase. The statistics of the avalanches follows the predictions of avalanche criticality P(E)∝E−ε where P(E) is the probability of finding an avalanche with the energy E. ...

Control of current-jump induced by voltage, temperature, light in p-type GaAs: Programmable critical temperature sensor

For two-terminal devices fabricated by Be (or Mn)-doped p-type epitaxial GaAs thin films, when the Mott metal-insulator transition (MIT) as current jump occurs, we observe that the energy gap of GaAs is not shifted, its peak intensity decreases in an applied voltage, and that the MIT temperature is between 410 and 440 K, and that the current jump is controlled by temperature, voltage and light intensity. The control of the jump voltage, a characteristic of the Mott MIT, reveals that these devic...

Near-lattice-matched and highly compressive-strained In_xAl_1−xN epilayers were grown on GaN templates by metalorganic chemical vapor deposition. The V-defects associated with screw-component threading dislocations (TDs) were found in all the In_xAl_1−xN layers. Their origin and evolution were investigated through near-lattice-matched In_0.173Al_0.827N layers with different thicknesses. Furthermore, small V-defects not associated with TDs were also found in In_xAl_1−xN layers with high In composition (x = 0.231). Stacking mismatch boundaries induced by lattice relaxation in In_xAl_1−xN epilayers under large strain is believed to be another mechanism forming V-defects.

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KEYWORDS and PACS

Keywords

aluminium compounds, gallium compounds, III-V semiconductors, indium compounds, MOCVD, screw dislocations, semiconductor epitaxial layers, stacking faults, V-centres

PACS

61.72.jn

Color centers
68.55.ag

Semiconductors
61.72.Lk

Linear defects: dislocations, disclinations
81.15.Gh

Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.Nn

Stacking faults and other planar or extended defects

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3272017

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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$abstract.society.value is a Member of CrossRef

American Institute of Physics

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