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Applied Physics Letters / Volume 95 / Issue 23 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 95, 231910 (2009); http://dx.doi.org/10.1063/1.3272683 (3 pages)

Control of current-jump induced by voltage, temperature, light in p-type GaAs: Programmable critical temperature sensor

Sungyoul Choi1, Bong-Jun Kim1, Yong Wook Lee2, Yong Sik Lim3, Jeongyong Choi1, and Hyun-Tak Kim1

1Metal Insulator Transition Laboratory, ETRI, Daejeon 305-350, Republic of Korea
2School of Electrical and Control Engineering, Pukyong National University, Busan 608-739, Republic of Korea
3Department of Applied Physics, Konkuk University, Chungju 380-701, Republic of Korea

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(Received 27 September 2009; accepted 15 November 2009; published online 10 December 2009)

For two-terminal devices fabricated by Be (or Mn)-doped p-type epitaxial GaAs thin films, when the Mott metal-insulator transition (MIT) as current jump occurs, we observe that the energy gap of GaAs is not shifted, its peak intensity decreases in an applied voltage, and that the MIT temperature is between 410 and 440 K, and that the current jump is controlled by temperature, voltage and light intensity. The control of the jump voltage, a characteristic of the Mott MIT, reveals that these devices can be applied for programmable critical temperature sensors or optical sensors with high sensitivity.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

beryllium, energy gap, gallium arsenide, III-V semiconductors, manganese, metal-insulator transition, optical sensors, semiconductor devices, semiconductor epitaxial layers, temperature sensors

PACS

  • 85.30.-z

    Semiconductor devices

  • 07.20.Dt

    Thermometers

  • 07.07.Df

    Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3272683

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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