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Applied Physics Letters / Volume 95 / Issue 24 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 95, 242102 (2009); http://dx.doi.org/10.1063/1.3272858 (3 pages)

Observation of the single-electron regime in a highly tunable silicon quantum dot

W. H. Lim1, F. A. Zwanenburg1, H. Huebl1, M. Möttönen1,2, K. W. Chan1, A. Morello1, and A. S. Dzurak1

1Centre of Excellence for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, The University of New South Wales, Sydney 2052, Australia
2Department of Applied Physics/COMP and Low Temperature Laboratory, Helsinki University of Technology, P.O. Box 5100, FI-02015 TKK, Finland

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(Received 5 October 2009; accepted 4 November 2009; published online 14 December 2009)

We report on low-temperature electronic transport measurements of a silicon metal-oxidesemiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot energy levels to be probed without affecting the electron density in the leads and vice versa. Appropriate gate biasing enables the dot occupancy to be reduced to the single-electron level, as evidenced by magnetospectroscopy measurements of the ground state of the first two charge transitions. Independent gate control of the electron reservoirs also enables discrimination between excited states of the dot and density of states modulations in the leads.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

electron density, elemental semiconductors, energy states, MIS devices, semiconductor quantum dots, semiconductor-metal boundaries, silicon

PACS

  • 85.30.Tv

    Field effect devices

  • 73.40.Qv

    Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3272858

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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