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14 Dec 2009

Volume 95, Issue 24, Articles (24xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 242102 (2009); http://dx.doi.org/10.1063/1.3272858 (3 pages)

W. H. Lim, F. A. Zwanenburg, H. Huebl, M. Möttönen, K. W. Chan, A. Morello, and A. S. Dzurak
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Extreme sensitivity displayed by single crystal diamond deep ultraviolet photoconductive devices

Mose Bevilacqua and Richard B Jackman

Appl. Phys. Lett. 95, 243501 (2009); http://dx.doi.org/10.1063/1.3273378 (3 pages) | Cited 2 times

Online Publication Date: 14 December 2009

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Deep UV detection using a single crystal diamond (SCD) substrate without a homoepitaxial layer has been demonstrated using a defect passivation treatment. Despite evidence of surface damage on the SCD, the treatments lead to highly effective photoconductive devices, displaying six-orders of discrimination between deep UV and visible light and a responsivity as high as 100 A/W, equivalent to an external quantum efficiency of 700, similar to the best values for devices based on high quality homoepitaxial layers. Impedance spectroscopic investigations suggest that the treatment used reduces the impact of less resistive surface material, most likely defects left from substrate polishing.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.65.Rv Passivation

Mapping the Dirac point in gated bilayer graphene

A. Deshpande, W. Bao, Z. Zhao, C. N. Lau, and B. J. LeRoy

Appl. Phys. Lett. 95, 243502 (2009); http://dx.doi.org/10.1063/1.3275755 (3 pages) | Cited 14 times

Online Publication Date: 17 December 2009

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We have performed low temperature scanning tunneling spectroscopy measurements on exfoliated bilayer graphene on SiO2. By varying the back gate voltage we observed a linear shift of the Dirac point and an opening of a bandgap due to the perpendicular electric field. In addition to observing a shift in the Dirac point, we also measured its spatial dependence using spatially resolved scanning tunneling spectroscopy. The spatial variation of the Dirac point was not correlated with topographic features and therefore we attribute its shift to random charged impurities.
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68.65.Ac Multilayers
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
71.20.Tx Fullerenes and related materials; intercalation compounds
61.72.up Other materials

Theoretical modeling of the series resistance effect on dye-sensitized solar cell performance

Yang Huang, Songyuan Dai, Shuanghong Chen, Changneng Zhang, Yifeng Sui, Shangfeng Xiao, and Linhua Hu

Appl. Phys. Lett. 95, 243503 (2009); http://dx.doi.org/10.1063/1.3270532 (3 pages) | Cited 8 times

Online Publication Date: 18 December 2009

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Based on the continuity equations and the equivalent circuit, the conductivity of substrates and the resistances of silver grid in dye-sensitized solar cell (DSC) are investigated. The complete I-V characteristics of DSC are obtained with different internal resistances. The theoretical and experimental results show internal resistances dominate the fill factor of DSC. At the same time, DSC module is investigated by numerical simulation under parallel connection with different illumination intensities. It can be found the high resistivity of substrates and the high illumination intensity lead to a lower optimal width in the DSC module.
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88.40.H- Solar cells (photovoltaics)
73.25.+i Surface conductivity and carrier phenomena
02.60.-x Numerical approximation and analysis

Impact of 〈110〉 uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors

Ling Xia and Jesús A. del Alamo

Appl. Phys. Lett. 95, 243504 (2009); http://dx.doi.org/10.1063/1.3273028 (3 pages) | Cited 5 times

Online Publication Date: 18 December 2009

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See Also: Erratum

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This letter reports on a study of the impact of 〈110〉 uniaxial strain on the characteristics of InGaAs high electron mobility transistors (HEMT) by bending GaAs chips up to a strain level of 0.4%. Systematic changes in the threshold voltage and intrinsic transconductance were observed. These changes can be well predicted by Schrödinger–Poisson simulations of the one-dimensional electrostatics of the device that include the piezoelectric effect, Schottky barrier height change, and sub-band quantization change due to strain. The effect of 〈110〉 strain on the device electrostatics emerges as a dominant effect over that of transport in the studied InGaAs HEMTs.
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85.30.Tv Field effect devices
02.30.Jr Partial differential equations
81.05.Ea III-V semiconductors
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