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14 Dec 2009

Volume 95, Issue 24, Articles (24xxxx)

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Appl. Phys. Lett. 95, 242102 (2009); http://dx.doi.org/10.1063/1.3272858 (3 pages)

W. H. Lim, F. A. Zwanenburg, H. Huebl, M. Möttönen, K. W. Chan, A. Morello, and A. S. Dzurak
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Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates

Roghaiyeh Ravash, Jürgen Bläsing, Thomas Hempel, Martin Noltemeyer, Armin Dadgar, Jürgen Christen, and Alois Krost

Appl. Phys. Lett. 95, 242101 (2009); http://dx.doi.org/10.1063/1.3272673 (3 pages) | Cited 5 times

Online Publication Date: 14 December 2009

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We present metal organic vapor phase epitaxy growth of polarization reduced, wurtzitic gallium nitride layers with an 18° inclination of the c-axis to the surface normal on planar Si(211) substrates. The growth of this layer is performed as c-axis oriented growth on the naturally occurring Si(111) planes of the Si(211) substrate. Cathodoluminescence measurements on a ∼ 1.2 μm thick structure reveals that it has a low concentration of basal plane stacking faults and no prismatic stacking fault luminescence.
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68.55.ag Semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.Fd III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Observation of the single-electron regime in a highly tunable silicon quantum dot

W. H. Lim, F. A. Zwanenburg, H. Huebl, M. Möttönen, K. W. Chan, A. Morello, and A. S. Dzurak

Appl. Phys. Lett. 95, 242102 (2009); http://dx.doi.org/10.1063/1.3272858 (3 pages) | Cited 19 times

Online Publication Date: 14 December 2009

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We report on low-temperature electronic transport measurements of a silicon metal-oxidesemiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot energy levels to be probed without affecting the electron density in the leads and vice versa. Appropriate gate biasing enables the dot occupancy to be reduced to the single-electron level, as evidenced by magnetospectroscopy measurements of the ground state of the first two charge transitions. Independent gate control of the electron reservoirs also enables discrimination between excited states of the dot and density of states modulations in the leads.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Study of temporal current stability and fluctuations of field emitted electrons from ZnO nanostructure films

Kishore Uppireddi, Boqian Yang, Peter Xian Feng, and Gerardo Morell

Appl. Phys. Lett. 95, 242103 (2009); http://dx.doi.org/10.1063/1.3273383 (3 pages) | Cited 4 times

Online Publication Date: 14 December 2009

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Stable field emission currents and low fluctuations are important feasibility requirements for the application of materials in field emission devices and displays, more than the low turn on fields that are generally considered. The current stability and current fluctuations of field emitted electrons from ZnO nanostructures were investigated over the period of 2, 12, and 24 h. The films with nanoneedle structure having density around ten/μm2 showed better short and long-term (temporal) stability over a period of 24 h. The short- and long-term stability and the current fluctuations of the nanostructures are reported and the causes for the degradation of the emission current are discussed.
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79.70.+q Field emission, ionization, evaporation, and desorption
61.46.-w Structure of nanoscale materials
68.55.ag Semiconductors

Graphene field effect transistors with parylene gate dielectric

S. S. Sabri, P. L. Lévesque, C. M. Aguirre, J. Guillemette, R. Martel, and T. Szkopek

Appl. Phys. Lett. 95, 242104 (2009); http://dx.doi.org/10.1063/1.3273396 (3 pages) | Cited 23 times

Online Publication Date: 14 December 2009

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We report the fabrication and characterization of graphene field effect transistors with parylene back gate and exposed graphene top surface. A back gate stack of 168 nm parylene on 94 nm thermal silicon oxide permitted optical reflection microscopy to be used for identifying exfoliated graphene flakes. Room temperature mobilities of 10 000 cm2/Vs at 1012/cm2 electron/hole densities were observed in electrically contacted graphene. Parylene gated devices exhibited stable neutrality point gate voltage under ambient conditions and less hysteresis than that observed in graphene flakes directly exfoliated on silicon oxide.
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85.30.Tv Field effect devices
78.67.Wj Optical properties of graphene

Selenium and tellurium: Elemental catalysts for conversion of graphite to diamond under high pressure and temperature

S. J. Lv, S. M. Hong, C. S. Yuan, and Y. Hu

Appl. Phys. Lett. 95, 242105 (2009); http://dx.doi.org/10.1063/1.3273855 (3 pages) | Cited 2 times

Online Publication Date: 14 December 2009

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The behavior of six systems of graphite with Sn, Pb, Sb, Bi, Se, and Te was investigated under high-pressure of around 9.0–9.6 GPa and high-temperature 1600–1850 °C. The results showed that the selenium and tellurium have obvious catalytic effects on spontaneous nucleation and crystal growth of diamond under pressure at 9.6 GPa, and at temperatures of 1800 and 1850 °C. The outer shell electron configuration analogous to oxygen and sulfur may play an important role in converting graphite to diamond under the high-pressure and high-temperature.
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64.70.K- Solid-solid transitions
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
62.50.-p High-pressure effects in solids and liquids
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Monte Carlo simulation of the percolation in Ag30Ge17Se53 amorphous electrolyte films

L. Chen, Q. C. Li, H. X. Guo, L. G. Gao, Y. D. Xia, J. Yin, and Z. G. Liu

Appl. Phys. Lett. 95, 242106 (2009); http://dx.doi.org/10.1063/1.3275701 (3 pages) | Cited 2 times

Online Publication Date: 15 December 2009

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Monte Carlo simulations using a dielectrophoresis model were performed to investigate the microstructural evolution and the conductance change of an Ag30Ge17Se53 electrolyte film clapped by a Ag active electrode, at which a positive bias was applied, and a Pt inert electrode. It has been revealed that driven by the electrical field Ag ions were injected into the electrolyte from the Ag electrode to form conductive particles, thereafter, the particles align themselves in nanowires connecting Ag electrode and Pt electrode and leading to an electrical percolation. It is responsible for the resistive switching of the system. The transmission electron microscopic observations and resistive measurement results are in good agreement with the results of simulations.
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73.61.Ng Insulators
82.45.Gj Electrolytes
72.60.+g Mixed conductivity and conductivity transitions
82.45.Fk Electrodes
73.40.Rw Metal-insulator-metal structures
68.37.Lp Transmission electron microscopy (TEM)

Compact silicon double and triple dots realized with only two gates

M. Pierre, R. Wacquez, B. Roche, X. Jehl, M. Sanquer, M. Vinet, E. Prati, M. Belli, and M. Fanciulli

Appl. Phys. Lett. 95, 242107 (2009); http://dx.doi.org/10.1063/1.3273857 (3 pages) | Cited 12 times

Online Publication Date: 15 December 2009

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We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local doping depending on the spacers length. The main characteristics of the triple dot stability diagram are quantitatively fitted.
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73.63.Nm Quantum wires
73.21.Hb Quantum wires
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
61.72.uf Ge and Si

Zero field spin splitting in AlSb/InAs/AlSb quantum wells induced by surface proximity effects

Masaya Nishioka, Bruce A. Gurney, Ernesto E. Marinero, and Francisco Mireles

Appl. Phys. Lett. 95, 242108 (2009); http://dx.doi.org/10.1063/1.3274129 (3 pages) | Cited 2 times

Online Publication Date: 15 December 2009

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InAs quantum well heterostructures are of considerable interest for mesoscopic device applications such as scanning probe and magnetic recording sensors, which require the channel to be close to the surface. Here we report on magnetotransport measurements of AlSb/InAs/AlSb Hall bars at a shallow depth of 20 nm. Analysis of the observed Shubnikov-de Haas oscillations and modeling show that spin splitting energies in excess of 2.3 meV occur at zero magnetic field. We conclude that the spin-splitting results from the Rashba effect due to the band bending in the quantum well. This is caused by substantial electron transfer from the surface to the quantum well and becomes significant when the quantum well is located near the surface.
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73.63.Hs Quantum wells
73.21.Fg Quantum wells
72.20.My Galvanomagnetic and other magnetotransport effects
85.70.Li Other magnetic recording and storage devices (including tapes, disks, and drums)
07.55.-w Magnetic instruments and components
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Si Esaki diodes with high peak to valley current ratios

M. Oehme, D. Hähnel, J. Werner, M. Kaschel, O. Kirfel, E. Kasper, and J. Schulze

Appl. Phys. Lett. 95, 242109 (2009); http://dx.doi.org/10.1063/1.3274136 (3 pages) | Cited 5 times

Online Publication Date: 15 December 2009

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We report room temperature current voltage characteristics of Si p+-i-n+ Esaki diodes integrated on silicon substrates. The diodes were fabricated by low-temperature molecular beam epitaxy. Very high and abrupt p- and n-type dopant transitions into the 1020 cm−3 ranges are achieved by boron and antimony, respectively. The integrated devices are realized without a postgrowth annealing step. The silicon Esaki diodes show negative differential resistance at room temperature with excellent peak to valley current ratios up to 3.94. A variation in the thickness of the silicon tunneling barrier changes the peak current density over three orders of magnitude.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.Kk Junction diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Excess carrier recombination lifetime of bulk n-type 3C-SiC

Vytautas Grivickas, Georgios Manolis, Karolis Gulbinas, Kęstutis Jarašiūnas, and Masashi Kato

Appl. Phys. Lett. 95, 242110 (2009); http://dx.doi.org/10.1063/1.3273382 (3 pages) | Cited 1 time

Online Publication Date: 16 December 2009

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Transient absorption technique was used to determine carrier lifetimes in 3C-SiC grown on Si and 6H-SiC substrates. A slow lifetime component originated from minority carrier traps and pointed out to the trap saturation with increasing injection. Recombination lifetime in different samples varied between 0.5–120 ns. Its value decreased with excess carrier density in the transition range between minority-carrier-lifetime and high-injection lifetime but abnormally increased above the carrier density of 2×1017 cm−3. Negligible contribution of surface and Auger recombination to recombination lifetime peculiarities was observed. Possible mechanisms of the observed lifetime variation are discussed.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.25.+i Surface conductivity and carrier phenomena
72.80.Jc Other crystalline inorganic semiconductors
79.20.Fv Electron impact: Auger emission

Interaction between Na and Li in ZnO

Pekka T. Neuvonen, Lasse Vines, Andrej Yu. Kuznetsov, Bengt G. Svensson, Xiaolong Du, Filip Tuomisto, and Anders Hallén

Appl. Phys. Lett. 95, 242111 (2009); http://dx.doi.org/10.1063/1.3270107 (3 pages) | Cited 2 times

Online Publication Date: 16 December 2009

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The interaction between group-Ia elements in ZnO have been studied by implanting Na into hydrothermally grown ZnO samples containing ∼ 4×1017 Li/cm3 and employing secondary ion mass spectrometry for sample analysis. Postimplantation annealing above 500 °C results in a diffusion of Na and concurrently Li is efficiently depleted from the regions occupied by Na. The data show unambiguously that Na and Li compete for the same trapping site and the results provide strong experimental evidence for that the formation energies of Na on Zn site together with that of interstitial Li are lower than those of Li on Zn site and interstitial Na in highly resistive ZnO. This conclusion is also supported by recent theoretical estimates of the formation energies of these species as a function of the Fermi-level position in ZnO.
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61.72.uj III-V and II-VI semiconductors
61.80.Jh Ion radiation effects
66.30.J- Diffusion of impurities
61.72.jj Interstitials
61.72.Cc Kinetics of defect formation and annealing
71.20.Nr Semiconductor compounds

Advanced impurity trap memory with atomic-scale Ti impurities on LaAlO3: Evidence for the origins of enhanced memory performance

Seungjae Jung, Hyejung Choi, Yongkyu Ju, Man Chang, Minseok Jo, Joonmyoung Lee, Jaesik Yoon, Choongman Lee, and Hyunsang Hwang

Appl. Phys. Lett. 95, 242112 (2009); http://dx.doi.org/10.1063/1.3270528 (3 pages)

Online Publication Date: 17 December 2009

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We investigated advanced impurity trap memory (ITM) with atomic-scale Ti impurities on LaAlO3. Our ITM showed excellent memory characteristics, including a memory window (MW) of 5 V under +12 V/−10 V, ∼ 44% retained charge in 10 yr retention at 85 °C, and endurance without MW degradation up to 104 cycles. To understand the origins of these enhanced characteristics, we conducted various physical analyses. Our results confirmed that the incorporation of ultrathin LaAlO3, featuring both thermodynamic stability for diffusion barrier of Ti and favorable energy band structure together with high dielectric constant for bandgap engineering of tunnel oxide, is responsible for enhanced performance.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
84.30.Sk Pulse and digital circuits
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
71.55.Ht Other nonmetals
77.22.Ch Permittivity (dielectric function)

Nonlinear current-voltage behavior and giant positive magnetoresistance in nonmagnetic Au/Yttria-stabilized zirconia/Si heterostructures

T. L. Qu, J. Li, Y. G. Zhao, J. W. Mei, X. Liu, H. F. Tian, J. P. Shi, S. M. Guo, J. Li, D. N. Zheng, and J. Q. Li

Appl. Phys. Lett. 95, 242113 (2009); http://dx.doi.org/10.1063/1.3274130 (3 pages) | Cited 1 time

Online Publication Date: 17 December 2009

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We report on the nonlinear current-voltage (I-V) behavior and giant positive magnetoresistance (GPMR) in the Au/Yttria-stabilized zirconia/Si heterostructures. The I-V curves of the heterostructures show a rectifying property and follow the Fowler–Nordheim tunneling behavior for the larger forward bias voltages. The GPMR of the samples increases with decreasing temperature and exceeds 100 000% in a magnetic field of 7 T at 20 K with a voltage of +4 V. It also shows anisotropy with magnetoresistance for the magnetic field perpendicular to the current larger than that of the parallel case. A possible mechanism was proposed to account for the results.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.My Galvanomagnetic and other magnetotransport effects
72.80.Cw Elemental semiconductors
72.80.Ga Transition-metal compounds
72.80.Sk Insulators

Hole-based memory operation in an InAs/GaAs quantum dot heterostructure

A. Marent, T. Nowozin, J. Gelze, F. Luckert, and D. Bimberg

Appl. Phys. Lett. 95, 242114 (2009); http://dx.doi.org/10.1063/1.3275758 (3 pages) | Cited 8 times

Online Publication Date: 18 December 2009

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We present an InAs/GaAs quantum dot (QD) memory structure with all-electrical data access which uses holes as charge carriers. Charging and discharging of the QDs are clearly controlled by a gate voltage. The stored information is read-out by a two-dimensional hole gas underneath the QD-layer. Time resolved drain-current-measurements demonstrate the memory operation. Present write times are 80 ns.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.La Quantum dots
84.30.Sk Pulse and digital circuits
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