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14 Dec 2009

Volume 95, Issue 24, Articles (24xxxx)

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Appl. Phys. Lett. 95, 242102 (2009); http://dx.doi.org/10.1063/1.3272858 (3 pages)

W. H. Lim, F. A. Zwanenburg, H. Huebl, M. Möttönen, K. W. Chan, A. Morello, and A. S. Dzurak
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Stimulated emission of near-infrared radiation by current injection into silicon (100) quantum well

S. Saito, Y. Suwa, H. Arimoto, N. Sakuma, D. Hisamoto, H. Uchiyama, J. Yamamoto, T. Sakamizu, T. Mine, S. Kimura, T. Sugawara, and M. Aoki

Appl. Phys. Lett. 95, 241101 (2009); http://dx.doi.org/10.1063/1.3273367 (3 pages) | Cited 6 times

Online Publication Date: 14 December 2009

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We describe the observation of stimulated emissions by current injections into a silicon quantum well. The device consists of a free standing membrane with a distributed feedback resonant cavity fabricated by state-of-the-art silicon processes. The emission spectra have multimode structures peaked in the near-infrared region above the submilliampere threshold currents at room temperatures. Consequently, electronics and photonics should be able to be converged on chips by using silicon quantum well laser diodes.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Fabrication of high efficiency III-V quantum nanostructures at low thermal budget on Si

S. Bietti, C. Somaschini, S. Sanguinetti, N. Koguchi, G. Isella, and D. Chrastina

Appl. Phys. Lett. 95, 241102 (2009); http://dx.doi.org/10.1063/1.3273860 (3 pages) | Cited 8 times

Online Publication Date: 14 December 2009

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We fabricate high efficiency GaAs/AlGaAs quantum nanostructure active layer for intersubband detectors and light emitting devices on a silicon substrate. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature ⩽ 350 °C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits. The realized quantum nanostructures show optical efficiencies comparable to those achievable with state of the art quantum dot materials grown on GaAs substrates.
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81.16.-c Methods of micro- and nanofabrication and processing
85.60.Jb Light-emitting devices
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.ag Semiconductors
85.40.Sz Deposition technology

Thermal emission from finite photonic crystals

Christian J. Schuler, Christian Wolff, Kurt Busch, and Marian Florescu

Appl. Phys. Lett. 95, 241103 (2009); http://dx.doi.org/10.1063/1.3275578 (3 pages) | Cited 2 times

Online Publication Date: 16 December 2009

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We present a microscopic theory of thermal emission from finite-sized photonic crystals and show that the directional spectral emissivity and related quantities can be evaluated via standard bandstructure computations without any approximation. We then identify the physical mechanisms through which interfaces modify the potentially super-Planckian radiation flow inside infinite photonic crystals, such that thermal emission from finite-sized samples is consistent with the fundamental limits set by Planck’s law. As an application, we further demonstrate that a judicious choice of a photonic crystal’s surface termination facilitates considerable control over both the spectral and angular thermal emission properties.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.60.Kn Thermoluminescence

Spin-dependent photoconductivity in nonmagnetic semiconductors at room temperature

F. Zhao, A. Balocchi, A. Kunold, J. Carrey, H. Carrère, T. Amand, N. Ben Abdallah, J. C. Harmand, and X. Marie

Appl. Phys. Lett. 95, 241104 (2009); http://dx.doi.org/10.1063/1.3273393 (3 pages) | Cited 3 times

Online Publication Date: 16 December 2009

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By combining optical spin injection techniques with transport spectroscopy tools, we demonstrate a spin-photodetector allowing for the electrical measurement and active filtering of conduction band electron spin at room temperature in a simple nonmagnetic GaAsN semiconductor structure. By switching the polarization of the incident light from linear to circular, we observe a spin dependent photoconductivity change reaching up to 40% without the need of an external magnetic field. The spin dependent photoconductivity change relies on the efficient spin filtering effect of conduction band electrons on N-induced Ga self-interstitial deep paramagnetic centers.
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72.40.+w Photoconduction and photovoltaic effects
72.25.Dc Spin polarized transport in semiconductors
61.72.jj Interstitials
71.20.Nr Semiconductor compounds

Subwavelength direct laser writing by strong optical nonlinear absorption and melt-ablation threshold characteristics

Jingsong Wei, Jing Liu, and Xinbing Jiao

Appl. Phys. Lett. 95, 241105 (2009); http://dx.doi.org/10.1063/1.3272011 (3 pages) | Cited 5 times

Online Publication Date: 16 December 2009

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In this work, we propose nonlinear absorption and melt-ablation threshold characteristics induced subwavelength direct laser writing. The writing materials need to have two features: one is strong nonlinear absorption, and the other is melt-ablation threshold characteristics. According to the strong nonlinear absorption and melt-ablation threshold characteristics of AgInSbTe thin films, the effective energy absorption spot is calculated. The results indicate that the full width at half maximum of the effective energy absorption spot is about 2/5 the original spot. If only the energy intensity above 80% maximum can induce the melt-ablation, the direct laser writing mark size or linewidth can be reduced to 0.14λ/NA (NA denotes numerical aperture), which is only about 0.115 times the original spot size. The calculated results are verified, where the mark size is reduced to about 1/8 the real spot.
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42.62.Cf Industrial applications
42.79.Wc Optical coatings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.65.-k Nonlinear optics

Photocurrent in Ag–Si photodiodes modulated by plasmonic nanopatterns

Yumin Wang, Xiaodong Su, Yongyuan Zhu, Qianjin Wang, Dongliang Zhu, Junwei Zhao, San Chen, Wanxia Huang, and Shan Wu

Appl. Phys. Lett. 95, 241106 (2009); http://dx.doi.org/10.1063/1.3275708 (3 pages) | Cited 5 times

Online Publication Date: 18 December 2009

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We demonstrate that Ag–Si photodiodes allow photocurrents to be modulated by changing periods of nanopatterns on Ag film. The maximum and minimum photocurrents occur in certain periods corresponding to the excitation of surface plasmon polariton and Wood’s anomaly, which can be predicted with the help of related theories. Therefore, it is feasible to design nanopatterns to satisfy special requirements.
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85.60.Dw Photodiodes; phototransistors; photoresistors

Mid-infrared PbTe vertical external cavity surface emitting laser on Si-substrate with above 1 W output power

M. Rahim, M. Fill, F. Felder, D. Chappuis, M. Corda, and H. Zogg

Appl. Phys. Lett. 95, 241107 (2009); http://dx.doi.org/10.1063/1.3275792 (3 pages) | Cited 7 times

Online Publication Date: 18 December 2009

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Mid-infrared vertical external cavity surface emitting lasers (VECSELs) emitting above 1 W output power in pulsed mode and up to 17 mW in continuous mode at −172 °C were realized. Emission wavelength changes from 5 μm at −172 °C to 3.6 μm at 20 °C heat sink temperature. The active medium is a one wavelength thick PbTe layer grown by molecular beam epitaxy on a Si-substrate. It is followed by a 2.5 pair Pb1−yEuyTe/EuTe epitaxial Bragg mirror. The cavity is completed with an external curved Pb1−yEuyTe/BaF2 mirror. The VECSEL is optically pumped with 1.55 μm wavelength laser and In-soldered to Cu heat sink. No microstructural processing is needed.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Reconfigurable liquid crystal droplets using a dielectric force

Hongwen Ren, Seung Hee Lee, and Shin Tson Wu

Appl. Phys. Lett. 95, 241108 (2009); http://dx.doi.org/10.1063/1.3275795 (3 pages) | Cited 1 time

Online Publication Date: 18 December 2009

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Dielectric force-induced shape change of liquid crystal (LC) droplets which are randomly dispersed in a liquid polymer is demonstrated. By applying a sufficiently high voltage, the isolated spherical LC droplets are coalesced to form a planar layer, while the cylindrical LC droplets which make contact on both substrate surfaces cannot be deformed easily. On the contrary, each cylindrical LC droplet functions as a swollen well to unite the adjacent LC droplets. The dynamic behavior for flattening the spherical LC droplets is also studied. Potential applications of these reconfigurable LC droplets for various photonic devices are discussed.
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61.30.Pq Microconfined liquid crystals: droplets, cylinders, randomly confined liquid crystals, polymer dispersed liquid crystals, and porous systems
68.15.+e Liquid thin films
77.22.Ch Permittivity (dielectric function)

Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriers

Hun Jae Chung, Rak Jun Choi, Min Ho Kim, Jae Woong Han, Young Min Park, Yu Seung Kim, Ho Sun Paek, Cheol Soo Sone, Yong Jo Park, Jong Kyu Kim, and E. Fred Schubert

Appl. Phys. Lett. 95, 241109 (2009); http://dx.doi.org/10.1063/1.3276066 (3 pages) | Cited 11 times

Online Publication Date: 18 December 2009

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Multi-layer barrier structure is suggested as an alternative approach to single-layer polarization matching barrier structure for the reduction of efficiency droop. Time resolved photoluminescence measurement showed that polarization field was reduced by 19% in the multilayer barrier light emitting diodes structures. Optical power measurements on packaged devices showed overall increase of external quantum efficiency for all currents up to the current density of 150 A/cm2. Increase of optical power is attributed to reduced polarization and decreased current overflow to p-side cladding layers. These results provide additional evidences that polarization is important in addressing the droop problem.
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85.60.Jb Light-emitting devices
85.30.De Semiconductor-device characterization, design, and modeling
78.55.Cr III-V semiconductors

Whispering gallery-mode lasing in ZnO microrods at room temperature

J. Dai, C. X. XU, K. Zheng, C. G. Lv, and Y. P. Cui

Appl. Phys. Lett. 95, 241110 (2009); http://dx.doi.org/10.1063/1.3276069 (3 pages) | Cited 15 times

Online Publication Date: 18 December 2009

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An individual hexagonal ZnO microrod was employed as a whispering-gallery mode (WGM) microcavity to obtain ultraviolet lasing at room temperature. The WGM lasing shows a low threshold, a high quality factor, and distinct mode structure. A typical stimulated emission from the ZnO microrod with diagonal of 6.67 μm exhibits a low lasing threshold of 255 kW/cm2. The observed discrete lasing modes match with the simulated positions very well. The spatial distribution of the lasing intensity demonstrates the lasing output direction and provides the direct evidence of the WGM resonant mechanism. We systematically investigated the lasing performance for different sized microrods.
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78.40.Fy Semiconductors

Dual band terahertz metamaterial absorber: Design, fabrication, and characterization

Qi-Ye Wen, Huai-Wu Zhang, Yun-Song Xie, Qing-Hui Yang, and Ying-Li Liu

Appl. Phys. Lett. 95, 241111 (2009); http://dx.doi.org/10.1063/1.3276072 (3 pages) | Cited 43 times

Online Publication Date: 18 December 2009

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We report the design, simulation, and measurement of a dual-band metamaterial absorber in the terahertz region. Theoretical and experimental results show that the absorber has two distinct and strong absorption points near 0.45 and 0.92 THz, both which are related to the LC resonance of the metamaterial. The distributions of the power flow and the power loss indicate that the absorber is an excellent electromagnetic wave collector: the wave is first trapped and reinforced in certain specific locations and then completely consumed. This dual-band absorber has applications in many scientific and technological areas.
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42.70.-a Optical materials
42.79.-e Optical elements, devices, and systems
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