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21 Dec 2009

Volume 95, Issue 25, Articles (25xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 251105 (2009); http://dx.doi.org/10.1063/1.3275666 (3 pages)

D. Stehr, C. M. Morris, D. Talbayev, M. Wagner, H. C. Kim, A. J. Taylor, H. Schneider, P. M. Petroff, and M. S. Sherwin
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p-type conduction in beryllium-implanted hexagonal boron nitride films

B. He, W. J. Zhang, Z. Q. Yao, Y. M. Chong, Y. Yang, Q. Ye, X. J. Pan, J. A. Zapien, I. Bello, S. T. Lee, I. Gerhards, H. Zutz, and H. Hofsäss

Appl. Phys. Lett. 95, 252106 (2009); http://dx.doi.org/10.1063/1.3276065 (3 pages) | Cited 3 times

Online Publication Date: 22 December 2009

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p-type conduction in hexagonal boron nitride (hBN) films was achieved by beryllium implantation and subsequent rapid thermal annealing treatment. The dependence of phase composition and electrical properties of hBN films on the implantation fluence and annealing was studied. A maximum resistivity reduction by six orders of magnitude was demonstrated. Hall measurements revealed a corresponding hole concentration of 3×1019 cm−3 and mobility of 27 cm2/V s. The activation energy of Be ions was estimated to be 0.21 eV. It is suggested that hBN is a promising wide bandgap semiconductor for applications in high-temperature electronic devices and transparent conductive coatings.
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68.55.ag Semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Cc Kinetics of defect formation and annealing
66.30.H- Self-diffusion and ionic conduction in nonmetals
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.My Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Millisecond flash lamp annealing of shallow implanted layers in Ge

C. Wündisch, M. Posselt, B. Schmidt, V. Heera, T. Schumann, A. Mücklich, R. Grötzschel, W. Skorupa, T. Clarysse, E. Simoen, and H. Hortenbach

Appl. Phys. Lett. 95, 252107 (2009); http://dx.doi.org/10.1063/1.3276770 (3 pages) | Cited 6 times

Online Publication Date: 23 December 2009

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Shallow n+ layers in Ge are formed by phosphorus implantation and subsequent millisecond flash lamp annealing. Present investigations are focused on the dependence of P redistribution, diffusion and electrical activation on heat input into the sample and flash duration. In contrast to conventional annealing procedures an activation up to 6.5×1019 cm−3 is achieved without any dopant redistribution and noticeable diffusion. Present results suggest that independently of pretreatment the maximum activation should be obtained at a flash energy that corresponds to the onset of P diffusion. The deactivation of P is explained qualitatively by mass action analysis which takes into account the formation of phosphorus-vacancy clusters.
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61.72.Cc Kinetics of defect formation and annealing
66.30.J- Diffusion of impurities
61.72.sh Impurity distribution
61.72.uf Ge and Si
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.jd Vacancies

Enhanced shot noise in carbon nanotube field-effect transistors

A. Betti, G. Fiori, and G. Iannaccone

Appl. Phys. Lett. 95, 252108 (2009); http://dx.doi.org/10.1063/1.3274128 (3 pages) | Cited 1 time

Online Publication Date: 23 December 2009

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We predict shot noise enhancement in defect-free carbon nanotube field-effect transistors through a numerical investigation based on the self-consistent solution of the Poisson and Schrödinger equations within the nonequilibrium Green’s functions formalism, and on a Monte Carlo approach to reproduce injection statistics. Noise enhancement is due to the correlation between trapping of holes from the drain into quasibound states in the channel and thermionic injection of electrons from the source, and can lead to an appreciable Fano factor of 1.22 at room temperature.
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61.46.Fg Nanotubes
85.30.Tv Field effect devices
03.65.Ge Solutions of wave equations: bound states
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Polarity-dependent resistance switching in GeSbTe phase-change thin films: The importance of excess Sb in filament formation

Ramanathaswamy Pandian, Bart J. Kooi, Jasper L. M. Oosthoek, Pim van den Dool, George Palasantzas, and Andrew Pauza

Appl. Phys. Lett. 95, 252109 (2009); http://dx.doi.org/10.1063/1.3276272 (3 pages) | Cited 10 times

Online Publication Date: 23 December 2009

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We show that polarity-dependent resistance switching in GeSbTe thin films depends strongly on Sb composition by comparing current-voltage characteristics in Sb-excess Ge2Sb2+xTe5 and stoichiometric Ge2Sb2Te5 samples. This type of switching in Ge2Sb2+xTe5 films is reversible with both continuous and pulsed dc voltages less than 1.5 V. Low and high resistance states of this switching can be attributed to formation and rupture, respectively, of electrically conductive Sb-bridges between the Ge2Sb2Te5 crystals and electrodes through the resistive amorphous phase. The coexistence of polarity-dependent resistance switching with amorphous-crystalline phase-changes renders great opportunities to expand the applicability of GeSbTe films for data storage applications.
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68.55.ag Semiconductors
81.05.Gc Amorphous semiconductors
61.43.Dq Amorphous semiconductors, metals, and alloys
61.66.Bi Elemental solids
61.66.Dk Alloys
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Vortex domain wall chirality rectification due to the interaction with end domain spin structures in permalloy nanowires

E.-S. Wilhelm, D. McGrouther, L. Heyne, A. Bisig, and M. Kläui

Appl. Phys. Lett. 95, 252501 (2009); http://dx.doi.org/10.1063/1.3275576 (3 pages) | Cited 3 times

Online Publication Date: 21 December 2009

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The interaction of vortex domain walls with the end domain spin structure present at the rectangular end of a ferromagnetic nanowire is investigated using Lorentz transmission electron microscopy. When vortex walls are moved with short field pulses towards the wire end an end vortex is formed, whose chirality is independent of the original vortex wall chirality but is determined by the spin configuration of the end domain. This acts as a domain wall chirality “rectifier,” which could be useful for applications based on domain walls. The observed chirality transformations are reproduced by micromagnetic simulations showing a complex reversal mechanism.
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75.60.Ch Domain walls and domain structure
75.50.Bb Fe and its alloys
75.60.Jk Magnetization reversal mechanisms
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
75.78.Cd Micromagnetic simulations

The influence of the antiferromagnetic boundary on the magnetic property of La2NiMnO6

Xianjie Wang, Yu Sui, Yao Li, Lu Li, Xingquan Zhang, Yang Wang, Zhiguo Liu, Wenhui Su, and Jinke Tang

Appl. Phys. Lett. 95, 252502 (2009); http://dx.doi.org/10.1063/1.3267053 (3 pages) | Cited 4 times

Online Publication Date: 21 December 2009

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Polycrystalline La2NiMnO6 compounds were fabricated at different temperatures and their magnetic properties were investigated. Although the antiferromagnetic antisite disorder degree changes a little, the antiferromagnetic coupling intensity increases with increasing synthesized temperature. When La2NiMnO6 sample was cooled at 100 Oe from room temperature to 10 K, exchange bias was observed. Our results confirm that the exchange bias should originate from the coupling between the ferromagnetic La2NiMnO6 and antiferromagnetic antiphase boundaries.
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75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.50.Pp Magnetic semiconductors
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
61.72.J- Point defects and defect clusters
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Ee Antiferromagnetics

High magnetic field matching effects in NbN films induced by template grown dense ferromagnetic nanowires arrays

X. Hallet, M. Mátéfi-Tempfli, S. Michotte, L. Piraux, J. Vanacken, V. V. Moshchalkov, and S. Mátéfi-Tempfli

Appl. Phys. Lett. 95, 252503 (2009); http://dx.doi.org/10.1063/1.3276557 (3 pages) | Cited 5 times

Online Publication Date: 22 December 2009

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Dense arrays of ordered ferromagnetic nanowires have been used to create periodic magnetic pinning centers in thin superconducting NbN films. The nanowires were electrodeposited in a highly ordered porous alumina membrane and the thin NbN film was deposited on top of the perpendicularly oriented magnetic nanowires. Matching effects have been observed up to 2.5 T (11th matching field) and are maintained at low temperature. An appreciable enhancement of the superconducting properties is observed. At low fields, a hysteretic behavior in the magnetoresistance is found, directly related to the magnetization processes of arrays of interacting single domain ferromagnetic nanowires.
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74.25.Ha Magnetic properties including vortex structures and related phenomena
74.25.fc Electric and thermal conductivity
74.78.-w Superconducting films and low-dimensional structures
75.50.Tt Fine-particle systems; nanocrystalline materials
75.60.Ch Domain walls and domain structure
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Reducing extrinsic hysteresis in first-order La(Fe,Co,Si)13 magnetocaloric systems

J. D. Moore, K. Morrison, K. G. Sandeman, M. Katter, and L. F. Cohen

Appl. Phys. Lett. 95, 252504 (2009); http://dx.doi.org/10.1063/1.3276565 (3 pages) | Cited 12 times

Online Publication Date: 23 December 2009

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Simultaneous magnetization and sample temperature measurements were performed as a function of magnetic field and magnetic field sweep-rates to study the influence of these conditions on the hysteresis of the magnetocaloric transition in La(Fe1−x−yCoxSiy)13 samples. The large magnetocaloric effect in the compounds that show a first-order transition cause a significant departure from isothermal conditions leading to dynamic sweep-rate dependent magnetic hysteresis. Here we show how this deleterious effect can be greatly reduced by changing the sample geometry or by use of materials which show a second-order transition only. The key signatures of nonisothermal conditions in the magnetization data are highlighted.
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75.30.Sg Magnetocaloric effect, magnetic cooling
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

The radio-frequency impedance of individual intrinsic Josephson junctions

Johannes Leiner, Sajid Saleem, J. C. Fenton, Takashi Yamamoto, Kazuo Kadowaki, and P. A. Warburton

Appl. Phys. Lett. 95, 252505 (2009); http://dx.doi.org/10.1063/1.3275741 (3 pages) | Cited 1 time

Online Publication Date: 23 December 2009

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We have measured the response of an array of Bi2Sr2CaCu2O8+δ intrinsic Josephson junctions to irradiation at 3 GHz. By measuring the dependence of the switching current upon the radio-frequency current for five of the junctions in the array we show quantitatively that the junctions have identical impedances at 3 GHz, this impedance being given by the inverse of the slope of the current-voltage characteristics.
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74.50.+r Tunneling phenomena; Josephson effects
74.72.-h Cuprate superconductors
61.82.Ms Insulators

Si segregation in polycrystalline Co2MnSi films with grain-size control

A. Hirohata, S. Ladak, N. P. Aley, and G. B. Hix

Appl. Phys. Lett. 95, 252506 (2009); http://dx.doi.org/10.1063/1.3276073 (3 pages) | Cited 4 times

Online Publication Date: 23 December 2009

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In order to characterize the interface/surface properties of polycrystalline Co2MnSi Heusler alloy films, grain-size evolution with increasing annealing time has been investigated. Here, samples with nanometer-scale grains have been prepared by our specially-designed sputtering system in order to maximize the interface/surface area. Our well-controlled grains clearly show Si phase segregation. This Si phase becomes conductive near room temperature and may be responsible for the significant decrease in tunneling magnetoresistance previously reported by [ Wang et al., Appl. Phys. Lett. 93, 122506 (2008) ].
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64.75.-g Phase equilibria
75.70.Ak Magnetic properties of monolayers and thin films
75.47.Np Metals and alloys
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
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Photoinduced change of dielectric permittivity in molecular doped polymer layer

Heisuke Sakai, Hideyuki Murata, Motonobu Murakami, Kei Ohkubo, and Shunichi Fukuzumi

Appl. Phys. Lett. 95, 252901 (2009); http://dx.doi.org/10.1063/1.3275800 (3 pages) | Cited 4 times

Online Publication Date: 21 December 2009

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We demonstrate a large photoinduced change of dielectric permittivity due to the charge separated (CS) state of an electron donor-acceptor linked molecule, 6-[4′-(N,N-diphenylamino)phenyl]-3-ethoxycarbonylcoumarin (DPA–CM), doped in a polymethylmethacryrate (PMMA) matrix. Dielectric permittivity of DPA–CM in PMMA film increases from 4.1 to 7.5 under photoirradiation. Electron spin resonance spectra of the films measured under photoirradiation clearly show the formation of the CS state of DPA–CM in PMMA matrix. The origin of the photoinduced change of the dielectric permittivity is ascribed to the realignment of dipole of the CS state of DPA–CM.
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77.22.Ch Permittivity (dielectric function)
68.55.am Polymers and organics
61.41.+e Polymers, elastomers, and plastics
77.55.-g Dielectric thin films
76.30.-v Electron paramagnetic resonance and relaxation
61.72.up Other materials

Ferroelectricity in glycine picrate: An astonishing observation in a centrosymmetric crystal

M. Shakir, B. K. Singh, B. Kumar, and G. Bhagavannarayana

Appl. Phys. Lett. 95, 252902 (2009); http://dx.doi.org/10.1063/1.3275714 (3 pages) | Cited 3 times

Online Publication Date: 22 December 2009

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Remarkable ferroelectric property has been observed in the glycine picrate single crystal though it crystallizes in centrosymmetric structure. An anomaly at 105 °C was observed in dielectric and ac conductivity measurements. The activation energies for conduction (Ea) below and above this temperature are found to be 0.31 and 0.53 eV, respectively. The remanant polarization (Pr) and coercive field (Ec) at room temperature were found to be 0.64 μC/cm2 and 6.22 kV/cm, respectively. However, a remarkable increase in these values was observed above 105 °C. A significantly high d33 (piezoelectric charge coefficient) in the order of 18 pC/N was observed.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Jd Polymers; organic compounds
61.66.Hq Organic compounds
72.80.Le Polymers; organic compounds (including organic semiconductors)
77.22.Ej Polarization and depolarization
77.65.Bn Piezoelectric and electrostrictive constants

Acoustic emission and dielectric studies of phase transitions within the morphotropic phase boundary of xPb(Zr1/2Ti1/2)O3-(1−x)Pb(Ni1/3Nb2/3)O3 relaxor ferroelectrics

E. Dul'kin, E. Mojaev, M. Roth, O. Khamman, and X. Tan

Appl. Phys. Lett. 95, 252903 (2009); http://dx.doi.org/10.1063/1.3275730 (3 pages) | Cited 2 times

Online Publication Date: 22 December 2009

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We have carried out a combined acoustic emission (AE) and dielectric permittivity study of the xPb(Zr1/2Ti1/2)O3-(1−x)Pb(Ni1/3Nb2/3)O3 relaxor ferroelectric ceramics with compositions x = 0.7–0.9 corresponding to its morphotropic phase boundary. Temperatures of all phase transitions occurring on heating are identified accurately by AE, and a direct transition between the low-temperature (rhombohedral) and high-temperature (pseudocubic) relaxor phases is found. The AE peak intensity is generally proportional to the temperature derivative of the dielectric permittivity, in agreement with a model proposed for a thermally cycled small elastic dipole.
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77.80.Jk Relaxor ferroelectrics
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
77.22.Ch Permittivity (dielectric function)
62.65.+k Acoustical properties of solids

Evidences for the depletion region induced by the polarization of ferroelectric semiconductors

Guo-Liang Yuan and Junling Wang

Appl. Phys. Lett. 95, 252904 (2009); http://dx.doi.org/10.1063/1.3268783 (3 pages) | Cited 9 times

Online Publication Date: 23 December 2009

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Ferroelectric materials possess spontaneous polarization pointing from negative to positive bound surface charges. When a ferroelectric semiconductor is polarized, the induced electric field can drive free carriers, e.g., electrons in an n-type material, to neutralize surface charges until such field becomes zero. Such diffusion of free carriers induces a depletion region. Polarization switch can move the depletion region to the opposite surface, thus it can be used to manipulate any properties that are affected by such depletion region, such as unidirectional current and photovoltaic current.
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77.22.Ej Polarization and depolarization
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Jc Other crystalline inorganic semiconductors
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Nanochargers: Energetic materials for energy storage

Michelle L. Pantoya and Emily M. Hunt

Appl. Phys. Lett. 95, 253101 (2009); http://dx.doi.org/10.1063/1.3263721 (3 pages)

Online Publication Date: 21 December 2009

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Nanochargers are energetic materials consisting of fuel metal particles and metallic oxide particles that absorb and store energy up to an ignition threshold. Once ignited a controlled exothermic reaction ensues producing energy. Nanotechnology has spurred the understanding of unique nanoparticle combustion behaviors that enable creation of nanochargers with optimized heat capacity for storing energy. Although in the initial stages, these experiments demonstrate evidence of the nanocharger’s potential for energy storage and transfer.
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82.33.Vx Reactions in flames, combustion, and explosions
65.40.Ba Heat capacity

A compact, high power, ultrafast laser mode-locked by carbon nanotubes

Z. Sun, A. G. Rozhin, F. Wang, T. Hasan, D. Popa, W. O’Neill, and A. C. Ferrari

Appl. Phys. Lett. 95, 253102 (2009); http://dx.doi.org/10.1063/1.3275866 (3 pages) | Cited 27 times

Online Publication Date: 21 December 2009

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We report ultrafast highly chirped pulses from an erbium doped, nanotube-mode-locked fiber oscillator. We generate 1.6 W average power and 11 kW peak power by seeding a fiber amplifier. This paves the way to mode-locked all-fiber master oscillator amplifiers as economic and compact sources for high-power applications, such as micromachining and laser surgery.
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42.60.Fc Modulation, tuning, and mode locking
42.62.-b Laser applications
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Wd Fiber lasers
85.35.Kt Nanotube devices

Thermophoretically driven carbon nanotube oscillators

V. R. Coluci, V. S. Timóteo, and D. S. Galvão

Appl. Phys. Lett. 95, 253103 (2009); http://dx.doi.org/10.1063/1.3276546 (3 pages) | Cited 4 times

Online Publication Date: 22 December 2009

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The behavior of a nanodevice based upon double-walled carbon nanotube oscillators driven by periodically applied thermal gradients (7 and 17 K/nm) is investigated by numerical calculations and classical molecular dynamics simulations. Our results indicate that thermophoresis can be effective to initiate the oscillator and that suitable heat pulses may provide an appropriate way to tune its behavior. Sustained regular oscillatory as well as chaotic motions were observed for the systems investigated in this work.
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85.35.Kt Nanotube devices
84.30.Ng Oscillators, pulse generators, and function generators

Nuclear magnetic resonance-based study of ordered layering on the surface of alumina nanoparticles in water

Craig Gerardi, David Cory, Jacopo Buongiorno, Lin-Wen Hu, and Thomas McKrell

Appl. Phys. Lett. 95, 253104 (2009); http://dx.doi.org/10.1063/1.3276551 (3 pages) | Cited 10 times

Online Publication Date: 22 December 2009

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Layering of water molecules on the surface of alumina nanoparticles in an alumina/water nanofluid is studied using nuclear magnetic resonance (NMR). The data suggest that a thin ordered layer ( ∼ 1.4 nm) of water molecules surrounds each nanoparticle. This ordered layer increases the nanoparticle effective volumetric fraction; however, the nanofluid thermal conductivity appears to be unaffected by this layer, and in good agreement with Maxwell’s effective medium theory. Furthermore, the NMR data suggest that the nanoparticles do not enhance, but rather stifle micromixing in the base fluid.
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76.60.-k Nuclear magnetic resonance and relaxation
66.25.+g Thermal conduction in nonmetallic liquids
64.75.Ef Mixing

The structure of the polar Sn-doped indium oxide (001) surface

Erie H. Morales and Ulrike Diebold

Appl. Phys. Lett. 95, 253105 (2009); http://dx.doi.org/10.1063/1.3275716 (3 pages) | Cited 12 times

Online Publication Date: 22 December 2009

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Epitaxial Sn-doped In2O3 (ITO) thin films were grown using oxygen plasma-assisted molecular beam epitaxy (MBE) on (001) oriented Yttria Stabilized Zirconia. Low-energy-electron-diffraction shows that ITO(001) surface is oxygen terminated and has a c(1×1)-structure with p4g symmetry. Atomically-resolved Scanning Tunneling Microscopy suggests that surface oxygen atoms undergo dimerization; possible adsorption sites are identified. The density of surface oxygen depends on the Sn concentration and it is suggested that both, dimerization and doping stabilize the polar ITO(001) surface.
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68.35.bg Semiconductors
68.55.ag Semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
82.30.Nr Association, addition, insertion, cluster formation
68.43.Mn Adsorption kinetics
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

An energetic stability predictor of hydrogen-terminated Si nanostructures

Hu Xu, X. B. Yang, C. S. Guo, and R. Q. Zhang

Appl. Phys. Lett. 95, 253106 (2009); http://dx.doi.org/10.1063/1.3276554 (3 pages) | Cited 3 times

Online Publication Date: 23 December 2009

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We present a linear relationship between the cohesive energies and the H/Si ratio for hydrogen-terminated Si semiconductor nanostructures based on our model analysis and first-principles calculations. The H/Si ratio is shown to be a universal predictor of the nanostructure’s energetic stability and allows easily searching of magic numbers in Si quantum dots. Our findings substantially improve the understanding of nanostructure stability and make practical the prediction of structural properties.
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61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Crossbar heterojunction field effect transistors of CdSe:In nanowires and Si nanoribbons

Z. B. He, W. J. Zhang, Y. B. Tang, H. B. Wang, Y. L. Cao, H. S. Song, I. Bello, C. S. Lee, and S. T. Lee

Appl. Phys. Lett. 95, 253107 (2009); http://dx.doi.org/10.1063/1.3275715 (3 pages) | Cited 1 time

Online Publication Date: 23 December 2009

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Crossbar heterojunction arrays of n-CdSe:In nanowires (NWs) and p-Si nanoribbons (NRs) were built by ac electrical field-directed assembly. The junctions showed significant rectifying characteristics. With the p-Si NRs as gates, the junctions function as junction field effect transistors (JFETs) with high stability and reproducibility in performance. A small variation in gate voltage from −2 to −1 V was demonstrated to manipulate the current in n-CdSe:In NW channels by a factor near 103. The JFETs also showed a subthreshold swing value (67 mV/dec) approaching the theoretical limit (60 mV/dec), suggesting the great application potentials of the junctions in integrated nanoelectronics.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Electronic transport in monolayer graphene nanoribbons produced by chemical unzipping of carbon nanotubes

Alexander Sinitskii, Alexandra A. Fursina, Dmitry V. Kosynkin, Amanda L. Higginbotham, Douglas Natelson, and James M. Tour

Appl. Phys. Lett. 95, 253108 (2009); http://dx.doi.org/10.1063/1.3276912 (3 pages) | Cited 17 times

Online Publication Date: 23 December 2009

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We report on the structural and electrical properties of graphene nanoribbons (GNRs) produced by the oxidative unzipping of carbon nanotubes. GNRs were reduced by hydrazine at 95 °C and further annealed in Ar/H2 at 900 °C; monolayer ribbons were selected for the fabrication of electronic devices. GNR devices on Si/SiO2 substrates exhibit an ambipolar electric field effect typical for graphene. The conductivity of monolayer GNRs ( ∼ 35 S/cm) and mobility of charge carriers (0.5–3 cm2/V s) are less than the conductivity and mobility of pristine graphene, which could be explained by oxidative damage caused by the harsh H2SO4/KMnO4 used to make GNRs. The resistance of GNR devices increases by about three orders of magnitude upon cooling from 300 to 20 K. The resistance/temperature data is consistent with the variable range hopping mechanism, which, along with the microscopy data, suggests that the GNRs have a nonuniform structure.
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73.63.Fg Nanotubes
61.48.De Structure of carbon nanotubes, boron nanotubes, and other related systems
85.35.Kt Nanotube devices
72.20.Ee Mobility edges; hopping transport
81.16.-c Methods of micro- and nanofabrication and processing
81.40.Gh Other heat and thermomechanical treatments
61.48.Gh Structure of graphene

Mid-IR plasmonic antennas on silicon-rich oxinitride absorbing substrates: Nonlinear scaling of resonance wavelengths with antenna length

T. Šikola, R. D. Kekatpure, E. S. Barnard, J. S. White, P. Van Dorpe, L. Břínek, O. Tomanec, J. Zlámal, D. Y. Lei, Y. Sonnefraud, S. A. Maier, J. Humlíček, and M. L. Brongersma

Appl. Phys. Lett. 95, 253109 (2009); http://dx.doi.org/10.1063/1.3278593 (3 pages)

Online Publication Date: 23 December 2009

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We report on the resonant properties of platinum dipole antennas fabricated on a silicon-rich-oxinitride thin film that exhibits significant absorption in the mid-infrared of the electromagnetic spectrum (λ−1 ≈ 1100 cm−1). A nonlinear scaling between the resonant wavelength and the antenna length has been found and quantitatively confirmed by full-field electromagnetic simulations. The resonant wavelength increases linearly with antenna length for small lengths and tends to saturate for large ones (length >4 μm). This saturation effect is attributed to the coupling of a geometrical antenna resonance and an absorption resonance of the substrate material.
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78.30.Hv Other nonmetallic inorganics
68.55.-a Thin film structure and morphology
84.40.Ba Antennas: theory, components and accessories
78.66.Nk Insulators
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Self-ordering mechanism of nanocluster-chain on the functional vicinal surfaces

Jian-Feng Wan and W. Craig Carter

Appl. Phys. Lett. 95, 253110 (2009); http://dx.doi.org/10.1063/1.3276067 (3 pages) | Cited 2 times

Online Publication Date: 23 December 2009

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An energy model of nanoclusters-chain self-organized on the functional vicinal surfaces is established to investigate the self-ordering processes, which provides a promising and challenging nanomaterial-design method by means of the energy minimum principle and entropy change principle. The cluster-chain structure can be predicted through controlling the linear coverage of nanoclusters (PM) and the step width (L). The different interactions including the steps and terraces will perform a positive influence on the self-ordering due to their long-range forces.
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61.46.-w Structure of nanoscale materials
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
68.35.bg Semiconductors
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
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Bistable electrical switching and electronic memory effect in a solution-processable graphene oxide-donor polymer complex

Gang Liu, Xiaodong Zhuang, Yu Chen, Bin Zhang, Jinhui Zhu, Chun-Xiang Zhu, Koon-Gee Neoh, and En-Tang Kang

Appl. Phys. Lett. 95, 253301 (2009); http://dx.doi.org/10.1063/1.3276556 (3 pages) | Cited 27 times

Online Publication Date: 21 December 2009

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A solution-processable and electroactive complex of poly(N-vinylcarbazole)-derivatized graphene oxide (GO-PVK) was prepared via amidation of end-functionalized PVK, from reversible addition fragmentation chain transfer polymerization, with tolylene-2,5-diisocyanate-functionalized graphene oxide. The Al/GO-PVK/ITO device exhibits bistable electrical conductivity switching and nonvolatile rewritable memory effects. Both the OFF and ON states of the memory device are stable under a constant voltage stress of −1 V for up to 3 h, or under a pulse voltage stress of −1 V for up to 108 read cycles, with an ON/OFF state current ratio in excess of 103.
Show PACS
61.41.+e Polymers, elastomers, and plastics
72.80.Le Polymers; organic compounds (including organic semiconductors)
82.35.Jk Copolymers, phase transitions, structure
81.05.ue Graphene
84.30.Sk Pulse and digital circuits
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