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21 Dec 2009

Volume 95, Issue 25, Articles (25xxxx)

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Appl. Phys. Lett. 95, 251105 (2009); http://dx.doi.org/10.1063/1.3275666 (3 pages)

D. Stehr, C. M. Morris, D. Talbayev, M. Wagner, H. C. Kim, A. J. Taylor, H. Schneider, P. M. Petroff, and M. S. Sherwin
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Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides

Han Zhao, Jeff Huang, Yen-Ting Chen, Jung Hwan Yum, Yanzhen Wang, Fei Zhou, Fei Xue, and Jack C. Lee

Appl. Phys. Lett. 95, 253501 (2009); http://dx.doi.org/10.1063/1.3275001 (3 pages) | Cited 15 times

Online Publication Date: 22 December 2009

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We have investigated the effects of gate-first and gate-last process on oxide/InGaAs interface quality using In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) with atomic-layer-deposited (ALD) oxides. Sequence of source/drain activation anneal in the process results in remarkable electrical and physical difference. Applying gate-last process provides significant frequency dispersion reduction and interface trap density reduction for InGaAs MOSCAPs compared to gate-first process. A large amount of In–O, Ga–O, and As–As bonds was observed on InGaAs surface after gate-first process while no detectable interface reaction after gate-last process. Electrical and physical results also show that ALD Al2O3 exhibits better interface quality on InGaAs than HfO2.
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84.32.Tt Capacitors
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Magnetic field dependence of the coupling efficiency of a superconducting transmission line due to the proximity effect

S. Zhu, T. Zijlstra, A. A. Golubov, M. van den Bemt, A. M. Baryshev, and T. M. Klapwijk

Appl. Phys. Lett. 95, 253502 (2009); http://dx.doi.org/10.1063/1.3276076 (3 pages)

Online Publication Date: 22 December 2009

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The coupling efficiency of a Nb superconducting transmission line has been measured using a Fourier transform spectrometer for different magnetic fields. It is found that the coupling decreases with increasing magnetic field when the frequency is close to the gap of the Nb superconductor. This is attributed to the changes of the surface impedance of the proximity-coupled superconductor/normal-metal bilayers in the transmission line.
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85.25.-j Superconducting devices
84.40.Az Waveguides, transmission lines, striplines
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
74.45.+c Proximity effects; Andreev reflection; SN and SNS junctions
74.25.nn Surface impedance

Gate-to-drain capacitance verifying the continuous-wave green laser crystallization n-TFT trapped charges distribution under dc voltage stress

Zhen-Ying Hsieh, Mu-Chun Wang, Shuang-Yuan Chen, Chih Chen, and Heng-Sheng Huang

Appl. Phys. Lett. 95, 253503 (2009); http://dx.doi.org/10.1063/1.3275728 (3 pages) | Cited 1 time

Online Publication Date: 23 December 2009

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In this work, a metrology was proposed to realize the distribution of fixed oxide trapped charges and grain boundary trapped states. The (continuous-wave green laser crystallization) n-channel thin-film transistors (TFTs) were forced by dc voltage stress, VG = VD. The gate-to-drain capacitance, CGD−VG, with varying frequency of applied small signal was developed. To probe the distribution of these defects, the difference (initial capacitance values minus stressed capacitance values) of CGD−VG with different frequencies was precisely studied.
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85.30.Tv Field effect devices

A theoretical study of the initial oxidation of the GaAs(001)-β2(2×4) surface

M. Scarrozza, G. Pourtois, M. Houssa, M. Caymax, A. Stesmans, M. Meuris, and M. M. Heyns

Appl. Phys. Lett. 95, 253504 (2009); http://dx.doi.org/10.1063/1.3275737 (3 pages) | Cited 12 times

Online Publication Date: 23 December 2009

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The early stages of the oxidation of the GaAs(001)-β2(2×4) surface are investigated theoretically by ab initio molecular dynamics simulations. An atomistic mechanism of formation of structural defects at the interface is described. The electronic properties of the GaAs/oxide interface are computed and it is found that energy levels within the bandgap are associated with the generated interfacial structural defects. These results provide an atomistic description of the nature of the defects at the origin of the Fermi level pinning in III–V’s as well as the mechanism underlying their generation.
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81.65.Mq Oxidation
71.15.Pd Molecular dynamics calculations (Car-Parrinello) and other numerical simulations
68.35.Ct Interface structure and roughness
81.05.Ea III-V semiconductors
73.20.At Surface states, band structure, electron density of states
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