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21 Dec 2009

Volume 95, Issue 25, Articles (25xxxx)

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Appl. Phys. Lett. 95, 251105 (2009); http://dx.doi.org/10.1063/1.3275666 (3 pages)

D. Stehr, C. M. Morris, D. Talbayev, M. Wagner, H. C. Kim, A. J. Taylor, H. Schneider, P. M. Petroff, and M. S. Sherwin
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Demonstration of Raman gain at 800 nm in single-mode fiber and its potential application to biological sensing and imaging

Keisuke Goda, Ata Mahjoubfar, and Bahram Jalali

Appl. Phys. Lett. 95, 251101 (2009); http://dx.doi.org/10.1063/1.3275739 (3 pages) | Cited 2 times

Online Publication Date: 21 December 2009

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Optical amplification prior to photon-to-electron conversion improves detection sensitivity in spectroscopic and imaging applications. Here we report the first experimental demonstration of Raman amplification in a single-mode fiber at wavelengths near 800 nm. This approach can potentially enable fast real-time optical sensing and imaging in the wavelength band that benefits from both low water absorption and the availability of high-power Ti:Sapphire lasers.
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87.64.-t Spectroscopic and microscopic techniques in biophysics and medical physics
42.81.Pa Sensors, gyros
42.55.Wd Fiber lasers

Enhanced photoluminescence of strained Ge with a δ-doping SiGe layer on silicon and silicon-on-insulator

Cheng Li, Yanghua Chen, Zhiwen Zhou, Hongkai Lai, and Songyan Chen

Appl. Phys. Lett. 95, 251102 (2009); http://dx.doi.org/10.1063/1.3275863 (3 pages) | Cited 5 times

Online Publication Date: 21 December 2009

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An enhancement of the direct bandgap photoluminescence from Ge layer on silicon with boron or phosphorous δ-doping SiGe layers at room temperature is reported. The n-type δ-doping SiGe layer is proposed to transfer extra electrons to L valley in Ge, which decreases the possibility of the excited electrons in the Γ valley to be scattered to the L valley, and improve the photoluminescence of the direct band transition in the Ge layer. Additionally, 2.5 fold enhancement of luminescence from the strained Ge layer on a silicon-on-insulator substrate is demonstrated due to the resonant effect. This investigation is very promising for efficient Si-based Ge light emitting diodes compatible with silicon technology.
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78.66.-w Optical properties of specific thin films
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.up Other materials
78.55.-m Photoluminescence, properties and materials
85.60.Jb Light-emitting devices

Emission wavelength tuning of interband cascade lasers in the 3–4 μm spectral range

A. Bauer, F. Langer, M. Dallner, M. Kamp, M. Motyka, G. Sęk, K. Ryczko, J. Misiewicz, S. Höfling, and A. Forchel

Appl. Phys. Lett. 95, 251103 (2009); http://dx.doi.org/10.1063/1.3270002 (3 pages) | Cited 7 times

Online Publication Date: 21 December 2009

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GaSb-based type-II quantum well (QW) structures and interband cascade lasers (ICLs) are investigated with regards to the dependence of emission wavelength on active QW thicknesses. Experimentally derived photoluminescence data and electrically driven ICL device data accompanied by theoretical calculations yield an average tuning rate of 0.55 μm per monolayer InAs in the range between 2.97 and 4.16 μm. Together with a temperature dependent ICL tuning behavior of 1.88 nm/K, the presented results provide the means for reliable and accurate emission wavelength control of ICLs in the 3–4 μm wavelength span which is of major importance for gas sensing applications.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Tuning micropillar cavity birefringence by laser induced surface defects

Cristian Bonato, Dapeng Ding, Jan Gudat, Susanna Thon, Hyochul Kim, Pierre M. Petroff, Martin P. van Exter, and Dirk Bouwmeester

Appl. Phys. Lett. 95, 251104 (2009); http://dx.doi.org/10.1063/1.3276550 (3 pages) | Cited 6 times

Online Publication Date: 22 December 2009

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We demonstrate a technique to tune the optical properties of micropillar cavities by creating small defects on the sample surface near the cavity region with an intense focused laser beam. Such defects modify strain in the structure, changing the birefringence in a controllable way. We apply the technique to make the fundamental cavity mode polarization-degenerate and to fine tune the overall mode frequencies, as needed for applications in quantum information science.
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42.55.Sa Microcavity and microdisk lasers
42.50.Pq Cavity quantum electrodynamics; micromasers
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Ultrafast carrier capture in InGaAs quantum posts

D. Stehr, C. M. Morris, D. Talbayev, M. Wagner, H. C. Kim, A. J. Taylor, H. Schneider, P. M. Petroff, and M. S. Sherwin

Appl. Phys. Lett. 95, 251105 (2009); http://dx.doi.org/10.1063/1.3275666 (3 pages) | Cited 5 times

Online Publication Date: 22 December 2009

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To explore the capture dynamics of photoexcited carriers in semiconductor quantum posts, optical pump terahertz (THz) probe and time-resolved photoluminescence spectroscopy were performed. The results of the THz experiment show that after ultrafast excitation, electrons relax within a few picoseconds into the quantum posts, which act as efficient traps. The saturation of the quantum post states, probed by photoluminescence, was reached at approximately ten times the quantum post density in the samples. The results imply that quantum posts are highly attractive nanostructures for future device applications.
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73.63.Kv Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
78.67.Hc Quantum dots
78.47.jd Time resolved luminescence
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.55.Cr III-V semiconductors

Surface plasmon lasers with quantum dots as gain media

A. Banerjee, R. Li, and H. Grebel

Appl. Phys. Lett. 95, 251106 (2009); http://dx.doi.org/10.1063/1.3276273 (3 pages) | Cited 6 times

Online Publication Date: 22 December 2009

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As surface plasmons waveguides enter the electronic circuitry, surface plasmon (SP) sources are required. Here we demonstrate following attributes of optically pumped SPs laser: threshold, gain, spectral line narrowing, and feedback at 630 nm. The distinction between these attributes and those exhibited by amplified spontaneous emission source are discussed.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.50.Nn Quantum optical phenomena in absorbing, amplifying, dispersive and conducting media; cooperative phenomena in quantum optical systems
42.79.Gn Optical waveguides and couplers
42.55.Px Semiconductor lasers; laser diodes

Terahertz metamaterials fabricated by inkjet printing

Markus Walther, Alex Ortner, Henning Meier, Ute Löffelmann, Patrick J. Smith, and Jan G. Korvink

Appl. Phys. Lett. 95, 251107 (2009); http://dx.doi.org/10.1063/1.3276544 (3 pages) | Cited 22 times

Online Publication Date: 23 December 2009

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Metamaterial layers designed for gigahertz to terahertz (THz)-frequencies have been fabricated by inkjet printing. The spectral response of the structures consisting of periodically arranged metallic split-ring resonators is characterized by THz-time-domain spectroscopy and compared with identical structures produced by conventional photolithography and etching techniques. The broader linewidth of their resonances is shown to originate mainly from structural inhomogeneities. Our study shows that inkjet printing is a viable route for producing metamaterial structures, allowing for rapid processing and flexibility in the choice of substrates.
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84.40.Az Waveguides, transmission lines, striplines
07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques

Hybrid states of Tamm plasmons and exciton polaritons

M. Kaliteevski, S. Brand, R. A. Abram, I. Iorsh, A. V. Kavokin, and I. A. Shelykh

Appl. Phys. Lett. 95, 251108 (2009); http://dx.doi.org/10.1063/1.3266841 (3 pages) | Cited 10 times

Online Publication Date: 23 December 2009

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Channeling of exciton polaritons in the plane of semiconductor microcavities can be achieved by the deposition of metallic mesas on the top of the semiconductor structure. We show theoretically that the regime of strong coupling between cavity polaritons and Tamm surface plasmons is possible in such structures. The effect is favorable for the spatial confinement of polaritons and the formation of hybrid one-dimensional plasmon-polariton modes.
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71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
71.35.-y Excitons and related phenomena
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.22.Lp Collective excitations

Study of laser-plasma interaction using a physics-based model for understanding the physical mechanism of double-pulse effect in nanosecond laser ablation

Benxin Wu, Yun Zhou, and Andrew Forsman

Appl. Phys. Lett. 95, 251109 (2009); http://dx.doi.org/10.1063/1.3276695 (3 pages) | Cited 1 time

Online Publication Date: 23 December 2009

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This paper studies the double-pulse effect in high-intensity ( ≥ ∼ GW/cm2) nanosecond (ns) laser ablation, which refers to the significant material removal rate enhancement for ablation by two ns laser pulses (often separated by a delay time of ∼ 10 to 100 ns). The early-stage interaction of the second laser pulse with the plasma plume created by the first pulse is very important for understanding the physical mechanism of the double pulse effect. However, the plasma properties in the early stage (during a laser pulse or within 20 to 30 ns after the completion of the pulse) are very difficult to measure experimentally. In this letter, a physics-based predictive model is used as the investigation tool, which was previously verified based on experiments on plasma properties in the late stage, which are relatively easy to measure. The study shows that the second laser pulse does not directly strike the target condensed phase. Instead, it mainly interacts with the plasma plume created by the first laser pulse, heats and accelerates the ablated material in the plume lingering above the target surface.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.38.Mf Laser ablation
52.25.-b Plasma properties

Ultrahigh contrast light valve driven by electrocapillarity of liquid gallium

Jeff T. H. Tsai, Chih-Ming Ho, Fu-Cheng Wang, and Chi-Te Liang

Appl. Phys. Lett. 95, 251110 (2009); http://dx.doi.org/10.1063/1.3278441 (3 pages) | Cited 2 times

Online Publication Date: 23 December 2009

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multimedia

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This letter describes an ultrahigh contrast valve driven by the electrocapillarity of liquid gallium. We demonstrate that a micrometer-sized gallium droplet can be used to fabricate a prototype backlight transmissive pixel cell by transforming the droplet into a flat thin film. This light valve exhibits significantly high backlight utility (96%), an exceptional contrast ratio (106:1), and fast response time (0.49 ms). The high contrast ratio originated from the exceptional reflectivity of gallium, which can block backlight to prevent any transmission in the off state of our device. Without using any polarizer, the backlight utility can be improved dramatically compared to a conventional liquid crystal display. The backlight utility and switching time obtained from this prototype light valve is higher than that of commercial liquid crystal displays. This concept is also applicable to a wide variety of electro-optical devices.
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42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems

Two-color quantum dot laser with tunable wavelength gap

S. G. Li, Q. Gong, Y. F. Lao, H. D. Yang, S. Gao, P. Chen, Y. G. Zhang, S. L. Feng, and H. L. Wang

Appl. Phys. Lett. 95, 251111 (2009); http://dx.doi.org/10.1063/1.3278594 (3 pages) | Cited 7 times

Online Publication Date: 23 December 2009

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We report on two-color InAs/InP(100) quantum dot lasers with tunable wavelength gap. Two peaks of lasing emission were observed simultaneously, while the high energy peak undergoes continuous blueshift with the increase in the injection current, and the low energy peak is somewhat fixed. Sophisticated studies of the wavelength gap as a function of the laser power prove that the two-peak lasing and shifting is not caused by the effect of Rabi oscillation. Moreover, comparison of electroluminescence and lasing spectra under different injection currents reveal the blueshift of the high energy peak is most likely related to the state-filling effect.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
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