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21 Dec 2009

Volume 95, Issue 25, Articles (25xxxx)

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Appl. Phys. Lett. 95, 251105 (2009); http://dx.doi.org/10.1063/1.3275666 (3 pages)

D. Stehr, C. M. Morris, D. Talbayev, M. Wagner, H. C. Kim, A. J. Taylor, H. Schneider, P. M. Petroff, and M. S. Sherwin
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Bistable electrical switching and electronic memory effect in a solution-processable graphene oxide-donor polymer complex

Gang Liu, Xiaodong Zhuang, Yu Chen, Bin Zhang, Jinhui Zhu, Chun-Xiang Zhu, Koon-Gee Neoh, and En-Tang Kang

Appl. Phys. Lett. 95, 253301 (2009); http://dx.doi.org/10.1063/1.3276556 (3 pages) | Cited 27 times

Online Publication Date: 21 December 2009

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A solution-processable and electroactive complex of poly(N-vinylcarbazole)-derivatized graphene oxide (GO-PVK) was prepared via amidation of end-functionalized PVK, from reversible addition fragmentation chain transfer polymerization, with tolylene-2,5-diisocyanate-functionalized graphene oxide. The Al/GO-PVK/ITO device exhibits bistable electrical conductivity switching and nonvolatile rewritable memory effects. Both the OFF and ON states of the memory device are stable under a constant voltage stress of −1 V for up to 3 h, or under a pulse voltage stress of −1 V for up to 108 read cycles, with an ON/OFF state current ratio in excess of 103.
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61.41.+e Polymers, elastomers, and plastics
72.80.Le Polymers; organic compounds (including organic semiconductors)
82.35.Jk Copolymers, phase transitions, structure
81.05.ue Graphene
84.30.Sk Pulse and digital circuits
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Chemically modified ink-jet printed silver electrodes for organic field-effect transistors

Gregory Lewis Whiting and Ana Claudia Arias

Appl. Phys. Lett. 95, 253302 (2009); http://dx.doi.org/10.1063/1.3276913 (3 pages) | Cited 8 times

Online Publication Date: 21 December 2009

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Modification of ink-jet printed silver source and drain electrodes for organic field-effect transistors (FETs) with the electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) was investigated. Solution-based deposition of F4TCNQ onto ink-jet printed silver electrodes formed using either a nanoparticle-based or a metal organic decomposition ink, lead to a greater than tenfold improvement in FET mobility. Using these modified electrodes with the organic semiconductor 6,13-bis(triisopropylsilylethynyl) pentacene yields devices with a charge carrier mobility up to 0.9 cm2 V−1 s−1 and a current on/off ratio of 106.
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85.30.Tv Field effect devices
72.20.Fr Low-field transport and mobility; piezoresistance
82.45.Fk Electrodes
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Hybrid p-n junction light-emitting diodes based on sputtered ZnO and organic semiconductors

Jong H. Na, M. Kitamura, M. Arita, and Y. Arakawa

Appl. Phys. Lett. 95, 253303 (2009); http://dx.doi.org/10.1063/1.3275802 (3 pages) | Cited 4 times

Online Publication Date: 21 December 2009

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We fabricated light-emitting hybrid p-n junction devices using low temperature deposited ZnO and organic films, in which the ZnO and the organic films served as the n- and p-type component, respectively. The devices have a rectification factor as high as ∼ 103 and a current density greater than 2 A/cm2. Electroluminescence of the hybrid device shows the mixture of the emission bands arising from radiative charge recombination in organic and ZnO. The substantial device properties could provide various opportunities for low cost and large area multicolor light-emitting sources.
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85.30.Kk Junction diodes
85.60.Jb Light-emitting devices
81.15.Cd Deposition by sputtering
73.40.Ei Rectification
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
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Improved performance of blue phosphorescent organic light-emitting diodes with a mixed host system

Jonghee Lee, Jeong-Ik Lee, Jun Yeob Lee, and Hye Yong Chu

Appl. Phys. Lett. 95, 253304 (2009); http://dx.doi.org/10.1063/1.3276075 (3 pages) | Cited 20 times

Online Publication Date: 21 December 2009

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We have investigated a relationship between device performances and host properties in the emissive layer (EML) of iridium(III) bis(4′,6′-difluorophenylpyridinato)tetrakis(1-pyrazolyl)borate doped blue phosphorescent organic light-emitting diodes (PHOLEDs). We found that the recombination zone as well as charge carrier injection properties of the EML could be systematically engineered through a mixed host system. Therefore, light-emitting performances of blue PHOLEDs were greatly improved with external quantum and power efficiencies of 20.5% and 43.5 lm/W at a luminance of 56 cd/m2, respectively.
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85.60.Jb Light-emitting devices
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Proton migration mechanism for the instability of organic field-effect transistors

A. Sharma, S. G. J. Mathijssen, M. Kemerink, D. M. de Leeuw, and P. A. Bobbert

Appl. Phys. Lett. 95, 253305 (2009); http://dx.doi.org/10.1063/1.3275807 (3 pages) | Cited 19 times

Online Publication Date: 22 December 2009

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During prolonged application of a gate bias, organic field-effect transistors show an instability involving a gradual shift of the threshold voltage toward the applied gate bias voltage. We propose a model for this instability in p-type transistors with a silicon-dioxide gate dielectric, based on hole-assisted production of protons in the accumulation layer and their subsequent migration into the gate dielectric. This model explains the much debated role of water and several other hitherto unexplained aspects of the instability of these transistors.
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85.30.Tv Field effect devices
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Low voltage active pressure sensor based on polymer space-charge-limited transistor

Yu-Chiang Chao, Wei-Jen Lai, Chun-Yu Chen, Hsin-Fei Meng, Hsiao-Wen Zan, and Sheng-Fu Horng

Appl. Phys. Lett. 95, 253306 (2009); http://dx.doi.org/10.1063/1.3266847 (3 pages) | Cited 4 times

Online Publication Date: 23 December 2009

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Low voltage active pressure sensor is realized by vertically stacking a pressure sensitive rubber on a polymer space-charge-limited transistor. The sensor can be turned on and off by modulating the metal-grid base voltage within the range of 3 V. The output current is irrelevant to the pressure as the sensor is off. As the sensor is turned on, the output current values can be used to monitor the pressure. Reversible pressure sensing characteristics is observed below the pressure of 7.11 psi. The response time of the sensor to the pressure is as short as 22 ms.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
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High-resolution transparent carbon electrodes for organic field-effect transistors patterned by laser sintering

Hiroshi Wada and Takehiko Mori

Appl. Phys. Lett. 95, 253307 (2009); http://dx.doi.org/10.1063/1.3276771 (3 pages) | Cited 7 times

Online Publication Date: 23 December 2009

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Organic transistors are fabricated by selective laser sintering of carbon films formed from carbon solution. This method achieves low-cost and high-resolution carbon electrodes with the channel length down to 2 μm without using vacuum process and lithography. The resulting bottom-contact pentacene transistor realizes high performance owing to the low carbon/organic interfacial potential. Since the carbon film is as thin as 60 nm, the film is practically transparent.
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85.30.Tv Field effect devices
42.62.-b Laser applications
81.16.Nd Micro- and nanolithography
82.45.Fk Electrodes
81.05.Fb Organic semiconductors
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Double wavelength ultraviolet light sensitive organic photodetector

Fei Yan, Huihui Liu, Wenlian Li, Bei Chu, Zisheng Su, Guang Zhang, Yiren Chen, Jianzhuo Zhu, Dongfang Yang, and Junbo Wang

Appl. Phys. Lett. 95, 253308 (2009); http://dx.doi.org/10.1063/1.3266861 (3 pages) | Cited 11 times

Online Publication Date: 23 December 2009

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The authors demonstrate an organic ultraviolet (UV) photodetector (PD) device in which 1,3,5-tris(3-methylphenyl-phenylamino)-triphenyamine and 1,3,5-tris(N-phenylbenzimidazol-2-yl)-benzene were used as the electron donor and acceptor, respectively. The PD diode offers responses of 75.2 and 22.5 mA/W as the 365 and 330 nm UV light with 1.0 mW/cm2 intensities illuminate the PD diode through anode and cathode sides, respectively. It is interesting that only the planar heterojunction structure diode can provide the special response feature while bulk-heterojunction device could not do it. The working mechanism of the PD diode was also discussed in detail.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
71.55.-i Impurity and defect levels
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