APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

13 Jul 2009

Volume 95, Issue 2, Articles (02xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 023701 (2009); http://dx.doi.org/10.1063/1.3173808 (3 pages)

G. Devès, S. Roudeau, A. Carmona, S. Lavielle, K. Gionnet, G. Déléris, and R. Ortega
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device

Qi Liu, Chunmeng Dou, Yan Wang, Shibing Long, Wei Wang, Ming Liu, Manhong Zhang, and Junning Chen

Appl. Phys. Lett. 95, 023501 (2009); http://dx.doi.org/10.1063/1.3176977 (3 pages) | Cited 27 times

Online Publication Date: 13 July 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the direct electrical measurement of multiple resistance steps in the ZrO2-based solid electrolyte nonvolatile memory device using the refined dc I-V method with a very small voltage increasing rate. The results demonstrate that multiple conductive filaments are formed successively between the bottom and top metal electrodes through the insulating layer while increasing the bias voltage, which are consistent with the electrical field simulation results based on the solid electrolyte theory. The inverse relationship between resistance steps and the filament formation sequence are obtained, which helps understand the switching mechanism of the multiple conductive filaments.
Show PACS
84.30.Sk Pulse and digital circuits
82.45.Gj Electrolytes
82.45.Fk Electrodes
72.60.+g Mixed conductivity and conductivity transitions

On-chip magnetoresistive detection of resonance in microcantilevers

S. B. Patil, A. Guedes, P. P. Freitas, S. Cardoso, V. Chu, and J. P. Conde

Appl. Phys. Lett. 95, 023502 (2009); http://dx.doi.org/10.1063/1.3174912 (3 pages) | Cited 5 times

Online Publication Date: 14 July 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Magnetoresistive spin-valve sensors were used to provide on-chip detection of the mechanical resonance of a thin silicon microelectromechanical systems cantilever. The spin-valve sensor was placed underneath the free end of the cantilever. A CoCrPt thin-film permanent magnet was placed on top of the amorphous silicon/Al cantilever. The cantilever was electrostatically actuated and its deflection creates a change in the magnetic field that can be sensed by the spin-valve sensor. The resonance frequency of the structure in the megahertz range is detected by the measurement of the spin-valve sensor output. Minimum deflection detection limit is determined to be 0.06 Å/Hz1/2.
Show PACS
75.70.Ak Magnetic properties of monolayers and thin films
75.47.De Giant magnetoresistance
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Current-gain cutoff frequencies above 10 MHz for organic thin-film transistors with high mobility and low parasitic capacitance

Masatoshi Kitamura and Yasuhiko Arakawa

Appl. Phys. Lett. 95, 023503 (2009); http://dx.doi.org/10.1063/1.3176480 (3 pages) | Cited 11 times

Online Publication Date: 14 July 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The current-gain cutoff frequency for bottom contact n-channel C60 thin-film transistors (TFTs) with channel lengths of 2–10 μm has been investigated. Patterned gate electrodes were adopted to reduce parasitic capacitance of the TFTs. The cutoff frequency was estimated by direct measurement of the gate and drain modulation currents. The estimated cutoff frequency increases consistently with reducing channel length. A maximum cutoff frequency of 20.0 MHz was obtained from a C60 TFT with a channel length of 2 μm and a saturation mobility of 1.11 cm2/V s.
Show PACS
85.30.Tv Field effect devices
85.65.+h Molecular electronic devices

Magnetically actuated microrotors with individual pumping speed and direction control

B. Kavčič, D. Babič, N. Osterman, B. Podobnik, and I. Poberaj

Appl. Phys. Lett. 95, 023504 (2009); http://dx.doi.org/10.1063/1.3176969 (3 pages) | Cited 4 times

Online Publication Date: 14 July 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate an experimental realization of a microscale pump self-assembled from superparamagnetic colloidal spheres and driven by an external magnetic field, where a system of microelectrodes controls the pump rotor by dielectrophoretic force. Whereas an external magnetic field is used to assemble and drive the rotor, which allows parallel fabrication and actuation of many such devices, the microelectrodes enable control of an individual rotor and thus regulate pumping speed and direction of any single pump in the microfluidic device. Dielectrophoretically controlled micropumps can be fabricated with existing microfabrication techniques and can be easily integrated into complex microfluidic devices.
Show PACS
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
47.85.Np Fluidics

Layer-by-layer self-assembled conductor network composites in ionic polymer metal composite actuators with high strain response

Sheng Liu, Reza Montazami, Yang Liu, Vaibhav Jain, Minren Lin, James R. Heflin, and Q. M. Zhang

Appl. Phys. Lett. 95, 023505 (2009); http://dx.doi.org/10.1063/1.3179554 (3 pages) | Cited 8 times

Online Publication Date: 16 July 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigate the electromechanical response of conductor network composite (CNC) fabricated by the layer-by-layer (LbL) self-assembly method. The process makes it possible for CNCs to be fabricated at submicron thickness with high precision and quality. This CNCs exhibits high strain ∼ 6.8% under 4 V, whereas the RuO2/Nafion CNCs exhibit strain ∼ 3.3%. The high strain and submicron thickness of the LbL layers in an ionic polymer metal composite (IPMC) yield large and fast actuation. The response time of a 26 μm thick IPMC with 0.4 μm thick LbL CNCs to step voltage of 4 V is 0.18 s.
Show PACS
81.20.-n Methods of materials synthesis and materials processing
66.30.hk Polymers
77.65.-j Piezoelectricity and electromechanical effects

Light-induced increase of nonradiative recombination centers in hydrogenated nanocrystalline silicon solar cells under reverse electric bias

Keda Wang, Daxing Han, Guozhen Yue, Baojie Yan, Jeffrey Yang, and Subhendu Guha

Appl. Phys. Lett. 95, 023506 (2009); http://dx.doi.org/10.1063/1.3180493 (3 pages) | Cited 3 times

Online Publication Date: 16 July 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We studied photoluminescence (PL) of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells in the annealed and light-soaked states under various electric biases during light soaking. PL intensity from grain boundaries decreased after light soaking under a reverse bias, which implies a reduction in the radiative recombination rate as a consequence of an increase in nonradiative recombination centers in grain-boundary regions. However, such PL change was not observed after light soaking under open-circuit condition. The results suggest that the reverse bias during light soaking enhanced metastable defect generation in the grain-boundary regions, which is consistent with the explanation in our previous nc-Si:H cell stability studies.
Show PACS
84.60.Jt Photoelectric conversion
78.55.Ap Elemental semiconductors
61.72.Mm Grain and twin boundaries
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.63.Bd Nanocrystalline materials
82.60.Qr Thermodynamics of nanoparticles

Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs,In0.15Ga0.85As) substrates

Alessandro Molle, Guy Brammertz, Luca Lamagna, Marco Fanciulli, Marc Meuris, and Sabina Spiga

Appl. Phys. Lett. 95, 023507 (2009); http://dx.doi.org/10.1063/1.3182734 (3 pages) | Cited 6 times

Online Publication Date: 16 July 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
La-doped ZrO2 thin films were grown by O3-based atomic layer deposition on III-V (GaAs,In0.15Ga0.85As) substrates through direct growth and after intercalation of a Ge interface passivation layer. The interface composition was investigated by x-ray photoelectron spectroscopy, revealing a dramatic reduction of semiconductor-oxygen bonding upon Ge passivation. An improved electrical quality of the Ge-passivated interfaces due to the removal of Ga3+ bonding related traps is demonstrated by conductance measurements at various temperatures.
Show PACS
81.65.Rv Passivation
79.60.Jv Interfaces; heterostructures; nanostructures
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.35.Ct Interface structure and roughness
68.55.aj Insulators

A high-performance long wavelength superlattice complementary barrier infrared detector

David Z.-Y. Ting, Cory J. Hill, Alexander Soibel, Sam A. Keo, Jason M. Mumolo, Jean Nguyen, and Sarath D. Gunapala

Appl. Phys. Lett. 95, 023508 (2009); http://dx.doi.org/10.1063/1.3177333 (3 pages) | Cited 64 times

Online Publication Date: 16 July 2009

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We describe a long wavelength infrared detector where an InAs/GaSb superlattice absorber is surrounded by a pair of electron-blocking and hole-blocking unipolar barriers. A 9.9 μm cutoff device without antireflection coating based on this complementary barrier infrared detector design exhibits a responsivity of 1.5 A/W and a dark current density of 0.99×10−5 A/cm2 at 77 K under 0.2 V bias. The detector reaches 300 K background limited infrared photodetection (BLIP) operation at 87 K, with a black-body BLIP D∗ value of 1.1×1011 cm Hz1/2/W for f/2 optics under 0.2 V bias.
Show PACS
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
42.70.-a Optical materials
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close