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13 Jul 2009

Volume 95, Issue 2, Articles (02xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 023701 (2009); http://dx.doi.org/10.1063/1.3173808 (3 pages)

G. Devès, S. Roudeau, A. Carmona, S. Lavielle, K. Gionnet, G. Déléris, and R. Ortega
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Opening the light extraction cone of high index substrates with plasmonic gratings: Light emitting diode applications

A. Drezet, F. Przybilla, E. Laux, O. Mahboub, C. Genet, T. W. Ebbesen, J. S. Bouillard, A. Zayats, I. S. Spevak, A. V. Zayats, A. Yu Nikitin, and L. Martín-Moreno

Appl. Phys. Lett. 95, 021101 (2009); http://dx.doi.org/10.1063/1.3176435 (3 pages) | Cited 7 times

Online Publication Date: 13 July 2009

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The opening of the light extraction cone of a high index substrate (GaP) is demonstrated using plasmonic gratings. We show that the excitation of surface plasmons on the metal grating leads to the extraction of light otherwise undergoing total internal reflection in the substrate with high efficiency. This effect has an immediate application in the context of light emitting diodes, where resonant metal gratings are promising for the design of dual purpose electric contact/extraction structures.
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42.79.Dj Gratings
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
85.60.Jb Light-emitting devices

AlGaN membrane grating reflector

Jaehoon Kim, Dong-Uk Kim, Joonhee Lee, Heonsu Jeon, Yeonsang Park, and Y.-S. Choi

Appl. Phys. Lett. 95, 021102 (2009); http://dx.doi.org/10.1063/1.3168552 (3 pages) | Cited 5 times

Online Publication Date: 13 July 2009

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We report on AlGaN grating reflectors for short-wavelength applications, an alternative to conventional distributed Bragg reflectors that are difficult to make in a GaN-based system. An array of air-bridge AlGaN grating reflectors, with a period and filling factor of 430 nm and 0.55, was fabricated through holographic lithography and photoelectrochemical etching. Polarization-dependent microreflectance spectra were measured to confirm their consistency with simulation results. The reflectance measured at 532 nm for transverse-electric polarization was as high as ∼ 90%. We also found that the spectral range for high reflection correlates with the photonic Bloch band-edge modes.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
07.60.Hv Refractometers and reflectometers
42.40.Kw Holographic interferometry; other holographic techniques
42.79.Dj Gratings
82.45.Vp Semiconductor materials in electrochemistry

Three-dimensional localization with nanometer accuracy using a detector-limited double-helix point spread function system

Sri Rama Prasanna Pavani, Adam Greengard, and Rafael Piestun

Appl. Phys. Lett. 95, 021103 (2009); http://dx.doi.org/10.1063/1.3158923 (3 pages) | Cited 17 times

Online Publication Date: 13 July 2009

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Accurate estimation of the three-dimensional (3D) position of particles is critical in applications like biological imaging, atom/particle-trapping, and nanomanufacturing. While it is well-known that localization accuracy better than the Rayleigh resolution limit is possible, it was recently shown that, for photon-limited cases, 3D point spread functions (PSFs) can be shaped to increase accuracies over a 3D volume [ Pavani and Piestun, Opt. Express 16, 22048 (2008) ]. Here, we show that in the detector-limited regime, the gain in accuracy occurs in all three dimensions throughout the axial range of interest. The PSF is shaped as a double helix, resulting in a system with fundamentally better 3D localization accuracies than standard PSF systems, capable of achieving single-image subnanometer accuracies.
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71.55.Jv Disordered structures; amorphous and glassy solids
42.30.Lr Modulation and optical transfer functions

Schottky contact surface-plasmon detector integrated with an asymmetric metal stripe waveguide

Ali Akbari and Pierre Berini

Appl. Phys. Lett. 95, 021104 (2009); http://dx.doi.org/10.1063/1.3171937 (3 pages) | Cited 17 times

Online Publication Date: 13 July 2009

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A silicon-based Schottky contact photodetector integrated into a finite width asymmetric metal stripe supporting short-range surface plasmon polaritons is presented. Input optical energy is coupled into a bound mode supported by the stripe, leading to total absorption of in-coupled energy. The absorbed energy excites carriers in the metal stripe, some of which cross the Schottky barrier (internal photoemission) leading to a photocurrent under reverse bias. Significant enhancement in the quantum efficiency is observed for a thin metal stripe due to multiple internal reflections of excited carriers. The device holds promise for short-reach high-speed optical interconnects and silicon-based photonic circuitry.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Kk Junction diodes
42.82.Et Waveguides, couplers, and arrays
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

A widely voltage-tunable quantum cascade laser based on “two-step” coupling

Yu Yao, Kale J. Franz, Xiaojun Wang, Jen-Yu Fan, and Claire Gmachl

Appl. Phys. Lett. 95, 021105 (2009); http://dx.doi.org/10.1063/1.3179165 (3 pages) | Cited 3 times

Online Publication Date: 14 July 2009

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A novel quantum cascade laser design with “two-step” coupling between the injector and the upper laser state is demonstrated to achieve a widely voltage-tunable laser spectrum. Electroluminescence from this design can be tuned over a range of more than 200 cm−1 with a tuning coefficient of ∼ 700 cm−1/V per stage. Lasers based on this design provide a tuning range of ∼ 100 cm−1 (8.3–9 μm) above threshold with a tuning coefficient of ∼ 900 cm−1/V per stage at a constant temperature of 295 K.
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42.55.Px Semiconductor lasers; laser diodes
78.60.Fi Electroluminescence

Saturated small-signal gain of Si quantum dots embedded in SiO2/SiOx/SiO2 strip-loaded waveguide amplifier made on quartz

Gong-Ru Lin, Chung-Lun Wu, Cheng-Wei Lian, and Hung-Chun Chang

Appl. Phys. Lett. 95, 021106 (2009); http://dx.doi.org/10.1063/1.3179413 (3 pages) | Cited 6 times

Online Publication Date: 14 July 2009

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A SiO2/SiOx/SiO2 strip-loaded waveguide with buried Si quantum dots is optically pumped to provide amplified spontaneous emission centered at 805 nm with spectral linewidth of 140 nm. By top-pumping the 350-nm-thick SiOx with He–Cd laser of 40 mW at 325 nm, the optical gain of 65 cm−1 and loss coefficient of 5 cm−1 are determined. Under a 785 nm small-signal injection diagnosis, the power-dependent gain curve fitting with gain-saturated amplifier model reveals a peak gain of 27 dB (not including waveguide loss) and a net power gain of 9.5 dB for the Si-rich SiOx waveguide amplifier with a length of 5 mm.
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78.67.Hc Quantum dots
78.45.+h Stimulated emission
42.79.Gn Optical waveguides and couplers

Optical rectification in self-assembled monolayers probed at surface plasmon resonance condition

Ryohei Uzawa, Daisuke Tanaka, Haruki Okawa, Kazuhiko Hashimoto, and Kotaro Kajikawa

Appl. Phys. Lett. 95, 021107 (2009); http://dx.doi.org/10.1063/1.3179466 (3 pages) | Cited 2 times

Online Publication Date: 14 July 2009

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Optical rectification in a self-assembled monolayer containing nonlinear optical choromophore of hemicyanine adsorbed on a gold surface was observed in the attenuated total reflection geometry under the surface plasmon resonance condition. The effective second-order susceptibility χeff(2) was evaluated to be 43 pm V−1, which is consistent with the χ(2) values measured by linear electro-optic effect.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
42.65.An Optical susceptibility, hyperpolarizability
68.43.Mn Adsorption kinetics

Microstrip circuit analog of a complex diffraction phenomenon

A. Fernández-Prieto, F. Medina, and F. Mesa

Appl. Phys. Lett. 95, 021108 (2009); http://dx.doi.org/10.1063/1.3176436 (3 pages)

Online Publication Date: 14 July 2009

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This letter presents a methodology to reproduce at microwave frequencies the physical behavior of certain diffraction structures that have been investigated in the optics community. The methodology will be exemplified with a microstrip circuit implementation of a transmission line system exhibiting an electromagnetic response that mimics the response of simple and compound diffraction gratings. The identification of such “bridge” circuit analogies could be very fruitful for the understanding and development of design strategies to devise practical components based on phenomena employed in the affine areas of optics and microwave engineering.
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84.40.Az Waveguides, transmission lines, striplines
84.40.Ua Telecommunications: signal transmission and processing; communication satellites
42.79.Dj Gratings

Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity

C. Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, and K. Akahane

Appl. Phys. Lett. 95, 021109 (2009); http://dx.doi.org/10.1063/1.3180704 (3 pages) | Cited 13 times

Online Publication Date: 16 July 2009

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Self-assembled InAs/GaAs quantum dots (QDs) incorporated in an asymmetric GaAs/Al0.8Ga0.2As vertical cavity have been employed as an optical nonlinear medium for reflection-type all-optical switches. Switching time down to 23 ps together with wavelength tuning range over 30 nm have been achieved in this structure. An angle-dependent behavior of the switching time has been observed, which suggests there is a coupling mechanism between the ground and excited states in QDs with different sizes.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.65.Pc Optical bistability, multistability, and switching, including local field effects
73.21.La Quantum dots
42.82.Gw Other integrated-optical elements and systems

Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes

N. B. Cook and A. Krier

Appl. Phys. Lett. 95, 021110 (2009); http://dx.doi.org/10.1063/1.3177193 (3 pages) | Cited 5 times

Online Publication Date: 16 July 2009

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InAs-GaInAsSbP-InAsSbP double heterojunction light-emitting diodes were fabricated which exhibit electroluminescence near 3.7 μm at room temperature. Radiative recombination from band-tail states associated with alloy disorder and localized potential fluctuations was observed, as well as emission from states localized at the InAs-pentanary heterointerface.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
73.20.Fz Weak or Anderson localization
73.20.At Surface states, band structure, electron density of states

Employing two distinct photonic crystal resonances to improve fluorescence enhancement

Patrick C. Mathias, Hsin-Yu Wu, and Brian T. Cunningham

Appl. Phys. Lett. 95, 021111 (2009); http://dx.doi.org/10.1063/1.3184573 (3 pages) | Cited 5 times

Online Publication Date: 17 July 2009

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Surface-bound fluorescence assays such as microarrays have emerged as a prominent technology in current life sciences research and are currently performed on optically passive substrates such as glass microscope slides. We present an alternative approach using photonic crystal substrates exhibiting resonant reflections. In this work, we design and fabricate a photonic crystal with a TM-polarized resonance at the cyanine-5 excitation wavelength and a TE-polarized resonance spectrally overlapping this fluorophore’s emission spectrum. The former resonance increases the excitation of the fluorophore through enhanced electric field intensities, while the latter resonance redirects a proportion of emitted light toward the detection instrumentation. Spots of cyanine-5 conjugated streptavidin on the photonic crystal demonstrate a 60-fold increase in fluorescence intensity and a 42-fold increase in signal-to-noise ratio relative to a glass slide.
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42.70.Qs Photonic bandgap materials
78.60.Fi Electroluminescence
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Photonic stopband tuning of organic semiconductor distributed feedback lasers by oblique angle deposition of an intermediate high index layer

M. Stroisch, C. Teiwes-Morin, T. Woggon, M. Gerken, U. Lemmer, K. Forberich, and A. Gombert

Appl. Phys. Lett. 95, 021112 (2009); http://dx.doi.org/10.1063/1.3184591 (3 pages)

Online Publication Date: 17 July 2009

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We modified the photonic band structure of organic distributed feedback lasers by introducing a patterned high index intermediate layer of tantalum pentoxide. This layer was oblique angle evaporated onto one dimensional surface gratings with a periodicity of 400 nm. The dielectric broadened the stopband due to its high refractive index compared to both the substrate and the active layer. By tuning the layer thickness we could increase the stopband from 3 to 16 nm.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Dj Gratings
42.60.Fc Modulation, tuning, and mode locking
42.70.Qs Photonic bandgap materials
42.60.By Design of specific laser systems
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