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13 Jul 2009

Volume 95, Issue 2, Articles (02xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 023701 (2009); http://dx.doi.org/10.1063/1.3173808 (3 pages)

G. Devès, S. Roudeau, A. Carmona, S. Lavielle, K. Gionnet, G. Déléris, and R. Ortega
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Converse magnetoelectric effect in ferromagnetic shape memory alloy/piezoelectric laminate

S. Y. Chen, D. H. Wang, Z. D. Han, C. L. Zhang, Y. W. Du, and Z. G. Huang

Appl. Phys. Lett. 95, 022501 (2009); http://dx.doi.org/10.1063/1.3179146 (3 pages) | Cited 17 times

Online Publication Date: 13 July 2009

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In laminates, the converse magnetoelectric (CME) effect is often achieved by an elastic coupling between magnetostrictive and piezoelectric layers. Here the authors report on an alternative mechanism for obtaining CME. In a transition-metals-based ferromagnetic shape memory alloy/piezoelectric ceramic laminated composite, the stress-induced martensitic transformation is utilized to gain the magnetic changes, which gives rise to a giant CME effect consequently. The strong CME is observed at room temperature over a broad bandwidth, under weak magnetic bias and electric field.
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75.80.+q Magnetomechanical effects, magnetostriction
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
75.50.Cc Other ferromagnetic metals and alloys
64.70.K- Solid-solid transitions

Spin reorientation transitions in Pt/Co/Pt films under low dose Ga+ ion irradiation

J. Jaworowicz, A. Maziewski, P. Mazalski, M. Kisielewski, I. Sveklo, M. Tekielak, V. Zablotskii, J. Ferré, N. Vernier, A. Mougin, A. Henschke, and J. Fassbender

Appl. Phys. Lett. 95, 022502 (2009); http://dx.doi.org/10.1063/1.3179147 (3 pages) | Cited 10 times

Online Publication Date: 13 July 2009

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An elegant route for tuning the magnetic anisotropy of ultrathin Co films by Ga+ ion irradiation is presented. The magnetic anisotropy of a Pt/Co(2.6 nm)/Pt film is first changed from in-plane to out-of-plane by uniform low dose Ga+ ion irradiation at 30 keV. When increasing the dose, a second spin reorientation transition toward the sample plane is also evidenced. This could be a way to design magnetic nanowires with perpendicular anisotropy, embedded in an in-plane magnetized environment, either by irradiation through a mask or focused ion beam. Tentative explanations on the origin of these two successive spin reorientations are proposed.
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75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
68.55.at Other materials
75.30.Gw Magnetic anisotropy
61.80.Jh Ion radiation effects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

A bias voltage dependent positive magnetoresistance in Cox–C1−x/Si heterostructure

Xin Zhang, Xiaozhong Zhang, Caihua Wan, and Lihua Wu

Appl. Phys. Lett. 95, 022503 (2009); http://dx.doi.org/10.1063/1.3179152 (3 pages) | Cited 12 times

Online Publication Date: 13 July 2009

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Cox–C1−x granular films were deposited on n-type Si substrates by pulsed laser deposition method. The heterostructure, investigated in current-perpendicular-to-plane geometry, has a bias voltage dependent positive magnetoresistance (MR), and at room temperature, the MR value reaches 16% at magnetic field H = 2.5 kOe and bias voltage of 6 V. All MRs have saturated behavior when H>2.5 kOe. The mechanism of this MR is attributed to that the applied magnetic field and local random magnetic field modulate the ratio of singlet and triplet spin states leading to the MR.
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72.20.My Galvanomagnetic and other magnetotransport effects
68.55.jd Thickness
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.15.Fg Pulsed laser ablation deposition
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators

A model of the exchange bias setting process in magnetic read sensors

J. Barker, B. Craig, R. Lamberton, A. Johnston, R. W. Chantrell, and O. Heinonen

Appl. Phys. Lett. 95, 022504 (2009); http://dx.doi.org/10.1063/1.3179154 (3 pages) | Cited 2 times

Online Publication Date: 13 July 2009

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A model of the acquisition of exchange bias during the high temperature annealing process used to set the bias direction in the antiferromagnet is described. The model is applied to the investigation of the process of setting the bias direction in the antiferromagnetic layer, which comprises a high-temperature anneal in a field sufficiently large to saturate the ferromagnetic layers. It is shown that there is an optimal setting temperature depending on the material parameters. The temperature dependence of the antiferromagnetic anisotropy is shown to be an important factor in achieving maximum exchange bias.
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75.50.Ss Magnetic recording materials
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
75.60.Nt Magnetic annealing and temperature-hysteresis effects

Frustration driven stripe domain formation in Co/Pt multilayer films

J. E. Davies, O. Hellwig, E. E. Fullerton, M. Winklhofer, R. D. Shull, and Kai Liu

Appl. Phys. Lett. 95, 022505 (2009); http://dx.doi.org/10.1063/1.3179553 (3 pages) | Cited 11 times

Online Publication Date: 13 July 2009

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We report microscopic mechanisms for an unusual magnetization reversal behavior in Co/Pt multilayers where some of the first-order reversal curves protrude outside of the major loop. Transmission x-ray microscopy reveals a fragmented stripe domain topography when the magnetic field is reversed prior to saturation, in contrast to an interconnected pattern when reversing from a saturated state. The different domain nucleation and propagation behaviors are due to unannihilated domains from the prior field sweep. These residual domains contribute to random dipole fields that impede the subsequent domain growth and prevent domains from growing as closely together as for the interconnected pattern.
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75.60.Jk Magnetization reversal mechanisms
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.40.-s Critical-point effects, specific heats, short-range order

Micromagnet-superconducting hybrid structures with directional current flow dependence for persistent current switching

Ali Esad Ozmetin, Murat Kaya Yapici, Jun Zou, Igor F. Lyuksyutov, and Donald G. Naugle

Appl. Phys. Lett. 95, 022506 (2009); http://dx.doi.org/10.1063/1.3176481 (3 pages) | Cited 2 times

Online Publication Date: 13 July 2009

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This letter reports on a microfabricated magnet-superconducting hybrid structure (Co–SiO2–Pb82Bi18) showing the dependence of the critical current (Ic) on the current flow direction. With external magnetic field, intermittent superconducting and normally conducting regions are formed on the Pb82Bi18 film due to field localization created by the Co stripes, which is verified by scanning Hall probe microscopy measurements. Superconducting and normal conduction paths are created parallel and perpendicular to the Co stripes, providing directional dependency on the current flow. By changing the orientation of the ferromagnetic stripes with respect to the superconducting film, the hybrid structure could be adapted to realize a low-power persistent current switch.
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74.25.Ha Magnetic properties including vortex structures and related phenomena
68.37.-d Microscopy of surfaces, interfaces, and thin films
74.25.Sv Critical currents
74.78.-w Superconducting films and low-dimensional structures

Measurement of nonlinear frequency shift coefficient in spin-torque oscillators based on MgO tunnel junctions

Kiwamu Kudo, Tazumi Nagasawa, Rie Sato, and Koichi Mizushima

Appl. Phys. Lett. 95, 022507 (2009); http://dx.doi.org/10.1063/1.3176939 (3 pages) | Cited 15 times

Online Publication Date: 13 July 2009

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The nonlinear frequency shift coefficient, which represents the strength of the transformation of amplitude fluctuations into phase fluctuations of an oscillator, is measured for MgO-based spin-torque oscillators by analyzing the current dependence of the power spectrum. We have observed that linewidth against inverse normalized power plots show linear behavior below and above the oscillation threshold as predicted by the analytical theories for spin-torque oscillators. The magnitude of the coefficient is determined from the ratio of the linear slopes. Small magnitude of the coefficient ( ∼ 3) has been obtained for the device exhibiting narrow linewidth ( ∼ 10 MHz) at high bias current.
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85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields

Reverse magnetostructural transformation in Co-doped NiMnGa multifunctional alloys

S. Fabbrici, F. Albertini, A. Paoluzi, F. Bolzoni, R. Cabassi, M. Solzi, L. Righi, and G. Calestani

Appl. Phys. Lett. 95, 022508 (2009); http://dx.doi.org/10.1063/1.3179551 (3 pages) | Cited 10 times

Online Publication Date: 14 July 2009

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We studied the composition dependence of the structural and magnetic properties of Co-doped Ni–Mn–Ga alloys around the Mn-rich composition Ni50Mn30Ga20. By varying the Co and Mn content we have been able to tune the critical temperatures. In particular, in a suitable composition range, the Curie temperature of martensite is lower than Curie temperature of austenite and lower than martensitic transformation temperature, giving rise to a paramagnetic gap between magnetically ordered martensite and austenite and to the occurrence of a reverse magnetostructural transformation.
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75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
61.72.up Other materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
64.70.K- Solid-solid transitions
75.20.En Metals and alloys
81.30.Kf Martensitic transformations

Origin of low Gilbert damping in half metals

Chunsheng Liu, Claudia K. A. Mewes, Mairbek Chshiev, Tim Mewes, and William H. Butler

Appl. Phys. Lett. 95, 022509 (2009); http://dx.doi.org/10.1063/1.3157267 (3 pages) | Cited 9 times

Online Publication Date: 14 July 2009

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Using a combination of first-principles calculations and an extended Hückel tight binding model this letter reports on the origin of the low Gilbert damping in half metals. This approach enables the prediction of the lower limit for the magnetization relaxation in a wide variety of material systems relevant for future spintronic applications. For the two model systems Co2MnGe and Co2MnSi minimal damping parameters of 1.9×10−4 and 0.6×10−4 are predicted.
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75.80.+q Magnetomechanical effects, magnetostriction
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
81.40.Jj Elasticity and anelasticity, stress-strain relations
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers

N. Nepal, J. M. Zavada, R. Dahal, C. Ugolini, A. Sedhain, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 95, 022510 (2009); http://dx.doi.org/10.1063/1.3176972 (3 pages) | Cited 5 times

Online Publication Date: 14 July 2009

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We report on the enhancement of magnetic properties of Er-doped GaN epilayer structures, grown by metal-organic chemical vapor deposition, with illumination from a light emitting diode. Single and multiple Er-doped epilayers were grown with Er concentrations up to ∼ 1021 cm−3. All samples exhibited hysteresis behavior at room temperature as measured by an alternating gradient magnetometer. When the samples were illuminated at a wavelength of 371 nm, an increase in saturation magnetization was observed for each sample. The percentage increase for multiple layer samples ranged from 10%–25% indicating possible device applications.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Pp Magnetic semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.ag Semiconductors
85.60.Jb Light-emitting devices
61.72.uj III-V and II-VI semiconductors
81.05.Ea III-V semiconductors
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
75.50.Dd Nonmetallic ferromagnetic materials

Enhancement of magnetization in Eu doped BiFeO3 nanoparticles

Jian Liu, Liang Fang, Fengang Zheng, Sheng Ju, and Mingrong Shen

Appl. Phys. Lett. 95, 022511 (2009); http://dx.doi.org/10.1063/1.3183580 (3 pages) | Cited 36 times

Online Publication Date: 14 July 2009

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Bi1−xEuxFeO3 (BEFOx) nanoparticles have been synthesized by a sol-gel method. The samples maintain the pure rhombohedral structure up to x = 0.1, while an impure phase of EuFeO3 is observed at x = 0.15. The remenant magnetization of the BEFOx, which is significantly higher than those in nonmagnetically rare-earth doped BiFeO3, is found to increase with the increase of Eu concentration. Ferromagnetic coupling between Eu3+ and Fe3+ ions, evidenced by our first-principles calculations, is found to be the main reason for such a magnetization enhancement. In the mean time, the appearance of EuFeO3 phase is demonstrated to be another factor for the further magnetization enhancement in BEFOx = 0.15.
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81.16.-c Methods of micro- and nanofabrication and processing
75.50.Tt Fine-particle systems; nanocrystalline materials
61.72.up Other materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.80.+q Magnetomechanical effects, magnetostriction
75.50.Dd Nonmetallic ferromagnetic materials

Magnetic and luminescent properties of multifunctional GdF3:Eu3+ nanoparticles

Hon-Tung Wong, H. L. W. Chan, and J. H. Hao

Appl. Phys. Lett. 95, 022512 (2009); http://dx.doi.org/10.1063/1.3177194 (3 pages) | Cited 40 times

Online Publication Date: 14 July 2009

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Multifunctional GdF3:Eu3+ nanoparticles were synthesized using a hydrothermal method. Photoluminescent excitation and emission spectra, and lifetime were measured. The average lifetime of the nanoparticles is about 11 ms. The nanoparticle exhibits paramagnetism at both 293 and 77 K, ascribing to noninteracting localized nature of the magnetic moment in the compound. The magnetic properties of GdF3:Eu3+ is intrinsic to the Gd3+ ions, which is unaffected by the doping concentration of the Eu3+ luminescent centers. A measured magnetization of approximately 2 emu/g is close to reported values of other nanoparticles for bioseparation.
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75.30.Cr Saturation moments and magnetic susceptibilities
61.72.up Other materials
78.55.Hx Other solid inorganic materials
81.16.-c Methods of micro- and nanofabrication and processing
75.20.Ck Nonmetals
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

rf amplification in a three-terminal magnetic tunnel junction with a magnetic vortex structure

T. Nozaki, H. Kubota, S. Yuasa, M. Shiraishi, T. Shinjo, and Y. Suzuki

Appl. Phys. Lett. 95, 022513 (2009); http://dx.doi.org/10.1063/1.3177188 (3 pages) | Cited 4 times

Online Publication Date: 15 July 2009

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We fabricated a three-terminal MgO-based magnetic tunnel junction including a free layer for use as a vortex-type spin structure. The resonant motion of the magnetic vortex core, excited by the application of rf current to the free layer, was successfully detected through the tunneling magnetoresistance effect using a homodyne detection technique. By analyzing the detected dc signal, we were able to qualitatively estimate the efficiency of the spin-transfer induced excitation. From the parameters obtained in the experiment, we found that substantial voltage gain can be realized with this device.
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75.47.-m Magnetotransport phenomena; materials for magnetotransport
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
75.70.Ak Magnetic properties of monolayers and thin films
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields

Magnetoresistance based first-order reversal curve analysis of magnetic tunnel junctions

J. M. Pomeroy, T. C. White, H. Grube, J. C. Read, and J. E. Davies

Appl. Phys. Lett. 95, 022514 (2009); http://dx.doi.org/10.1063/1.3175723 (3 pages) | Cited 4 times

Online Publication Date: 16 July 2009

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First-order reversal curve (FORC) analysis is conventionally applied to magnetization versus applied magnetic field loops to determine the ensemble properties of multidomain magnetic samples ranging from naturally occurring geological samples to exquisitely engineered materials for use in magnetic storage. We apply FORC analysis to magnetic tunnel junctions (MTJs) by using magnetoresistance instead of magnetization field. By using the MTJ resistance to monitor domain switching, arbitrarily small samples can be studied, as well as functioning devices after lithographic patterning. Experimental data are presented from sub-0.01 mm2 MTJs that illustrate the application of FORC analysis and demonstrate asymmetric switching distributions when mapped in coercive versus interaction field space.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.70.Kw Domain structure (including magnetic bubbles and vortices)

Origin of large moments in MnxSi1−x at small x

M. Shaughnessy, C. Y. Fong, Ryan Snow, Kai Liu, J. E. Pask, and L. H. Yang

Appl. Phys. Lett. 95, 022515 (2009); http://dx.doi.org/10.1063/1.3168512 (3 pages) | Cited 3 times

Online Publication Date: 16 July 2009

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Recently, the magnetic moment/Mn, M, in MnxSi1−x was measured to be 5.0 μB/Mn, at x = 0.1%. To understand this observed M, we investigate several MnxSi1−x models of alloys using first-principles density functional methods. The only model giving M = 5.0 was a 513-atom cell having the Mn at a substitutional site, and Si at a second-neighbor interstitial site. The observed large moment is a consequence of the weakened d-p hybridization between the Mn and one of its nearest neighbor Si atoms, resulting from the introduction of the second-neighbor interstitial Si. Our result suggests a way to tune the magnetic moments of transition metal doped semiconductors.
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75.30.Cr Saturation moments and magnetic susceptibilities
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
61.72.jj Interstitials
75.50.Pp Magnetic semiconductors

FeAu/FePt exchange-spring media fabricated by magnetron sputtering and postannealing

Fang Wang, Xiaohong Xu, Yan Liang, Jing Zhang, and Haishun Wu

Appl. Phys. Lett. 95, 022516 (2009); http://dx.doi.org/10.1063/1.3183579 (3 pages) | Cited 16 times

Online Publication Date: 16 July 2009

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Soft/hard bilayers consisting of a FeAu layer with different thicknesses and a 20 nm L10-FePt layer have been fabricated by magnetron sputtering and postannealing. FeAu soft layer not only can promote the ordering degree of FePt layer because of the small lattice mismatch between them and the diffusion of Au atoms into FePt boundaries, but also can reduce the coercivity due to the soft/hard exchange coupling. The results of x-ray photoelectron spectroscopy indicate that a graded interface is formed in the FeAu/FePt bilayer after annealing, which is beneficial to reduce the pinning field. The magnetization reversal in the FeAu/FePt exchange-spring media occurs by the nucleation and propagation of a domain wall from soft layer into hard layer.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
81.15.Cd Deposition by sputtering
66.30.Ny Chemical interdiffusion; diffusion barriers
81.40.Gh Other heat and thermomechanical treatments
75.70.Kw Domain structure (including magnetic bubbles and vortices)
81.07.-b Nanoscale materials and structures: fabrication and characterization
75.60.Jk Magnetization reversal mechanisms
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Modification of magnetotransport properties across patterned GaMnAs nanoconstrictions by application of high current densities

Sung Un Cho, Hyung Kook Choi, Chan Uk Yang, Yun Daniel Park, Fabio C. S. Da Silva, Teresa Osminer, and David P. Pappas

Appl. Phys. Lett. 95, 022517 (2009); http://dx.doi.org/10.1063/1.3182720 (3 pages) | Cited 1 time

Online Publication Date: 17 July 2009

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We report on modifications in the magnetotransport properties across patterned GaMnAs nanoconstrictions by the application of high current densities (<107 A/cm2). Initially, we observe controllable changes in the electrical resistance with the direction of the bias current. Repeated biases at high current densities greatly increase the constriction resistances. Subsequent biasing and magnetotransport measurements show nearly a fourfold increase in the magnetoresistances and large changes in the magnetic switching behavior of GaMnAs. The initial reversibility of the changes in resistance suggests that dopant electromigration may locally alter the interstitial concentrations of Mn at the nanoconstriction.
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72.20.My Galvanomagnetic and other magnetotransport effects
75.50.Pp Magnetic semiconductors
75.60.-d Domain effects, magnetization curves, and hysteresis
72.80.Ey III-V and II-VI semiconductors
75.47.Pq Other materials
75.50.Tt Fine-particle systems; nanocrystalline materials
66.30.Qa Electromigration

Practical vortex diodes from pinning enhanced YBa2Cu3O7−δ

S. A. Harrington, J. L. MacManus-Driscoll, and J. H. Durrell

Appl. Phys. Lett. 95, 022518 (2009); http://dx.doi.org/10.1063/1.3182735 (3 pages) | Cited 6 times

Online Publication Date: 17 July 2009

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We identify a scalable, practical route to fabricating a superconducting diode. The device relies for its function on the barrier to flux vortex entry being reduced at the substrate interface of a superconducting pinning enhanced YBa2Cu3O7−δ nanocomposite film. We show that these composite systems provide a practical route to fabricating a useful superconducting diode and demonstrate the rectification of an alternating current.
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85.25.-j Superconducting devices
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.78.-w Superconducting films and low-dimensional structures

High spin injection polarization at an elevated dc bias in tunnel-junction-based lateral spin valves

X. J. Wang, H. Zou, L. E. Ocola, and Y. Ji

Appl. Phys. Lett. 95, 022519 (2009); http://dx.doi.org/10.1063/1.3182785 (3 pages) | Cited 14 times

Online Publication Date: 17 July 2009

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Submicron metallic lateral spin valves are fabricated with AlOx tunnel junctions as spin injection and detection barriers. The spin polarization is estimated to be ∼ 20%, determined by both Hanle effect and variations of device dimensions. The polarization is maintained at a large dc injection current density >2×106 A/cm2. Both the spin polarization and spin diffusion length are weakly temperature dependent.
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85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
72.25.-b Spin polarized transport
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
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