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13 Jul 2009

Volume 95, Issue 2, Articles (02xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 023701 (2009); http://dx.doi.org/10.1063/1.3173808 (3 pages)

G. Devès, S. Roudeau, A. Carmona, S. Lavielle, K. Gionnet, G. Déléris, and R. Ortega
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Magnetized microplasmas generated in a narrow quartz tube

Hiroyuki Yoshiki

Appl. Phys. Lett. 95, 021501 (2009); http://dx.doi.org/10.1063/1.3174915 (3 pages) | Cited 1 time

Online Publication Date: 13 July 2009

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Magnetized He and Ar microplasmas in a narrow quartz tube having an inner diameter of 1 mm (referred to as magnetized capillary microplasmas) are reported. A capillary microplasma can be magnetized by the occurrence of a radio frequency (rf) oscillating E×B drift motion along the tube axis, provided that the external magnetic field is perpendicular to both the rf electric field and the tube axis and that the Larmor radius of an electron is sufficiently smaller than both the electron mean free path and the tube radius. When a magnetic flux density of 0.4 T was applied, a magnetized capillary microplasma could be generated at gas pressures lower than 1.5 kPa because the electron cyclotron frequency exceeds the electron-neutral collision frequency. However, plasma ignition at low gas pressure below 4 kPa was hardly taken place without a strong magnetic field. The Ar atomic excitation temperature was estimated by optical emission spectroscopy and found to increase dramatically from 5000 to 15 000 K when the gas pressure was reduced from 4 to 0.2 kPa. This implies an increase in the electron temperature. Furthermore, Ar ionic emission (Ar II) lines were clearly observed under the magnetized plasma conditions.
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52.30.Cv Magnetohydrodynamics (including electron magnetohydrodynamics)
52.50.Qt Plasma heating by radio-frequency fields; ICR, ICP, helicons
52.25.Xz Magnetized plasmas
52.40.Db Electromagnetic (nonlaser) radiation interactions with plasma

Kinetics of the initial stage of silicon surface oxidation: Deal–Grove or surface nucleation?

I. Levchenko, U. Cvelbar, and K. Ostrikov

Appl. Phys. Lett. 95, 021502 (2009); http://dx.doi.org/10.1063/1.3179557 (3 pages) | Cited 10 times

Online Publication Date: 14 July 2009

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The nucleation-initiated oxidation of a Si surface at very low temperatures in plasmas is demonstrated experimentally, in contrast to the Deal–Grove mechanism, which predicts Si oxidation at a Si/SiO interface and cannot adequately describe the formation of SiO nanodots and oxidation rates at very low (several nanometers) oxide thickness. Based on the experimental results, an alternative oxidation scenario is proposed and supported by multiscale numerical simulations suggesting that saturation of micro- and nanohillocks with oxygen is a trigger mechanism for initiation of Si surface oxidation. This approach is generic and can be applied to describe the kinetics of low-temperature oxidation of other materials.
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81.05.Cy Elemental semiconductors
81.65.Mq Oxidation
82.20.-w Chemical kinetics and dynamics

On the surface roughness development of hydrogenated amorphous silicon deposited at low growth rates

M. A. Wank, R. A. C. M. M. van Swaaij, and M. C. M. van de Sanden

Appl. Phys. Lett. 95, 021503 (2009); http://dx.doi.org/10.1063/1.3179151 (3 pages) | Cited 3 times

Online Publication Date: 15 July 2009

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The surface roughness evolution of hydrogenated amorphous silicon (a-Si:H) films has been studied using in situ spectroscopic ellipsometry for a temperature range of 150–400 °C. The effect of external rf substrate biasing on the coalescence phase is discussed and a removal/densification of a hydrogen-rich layer is suggested to explain the observed roughness development in this phase. After coalescence we observe two distinct phases in the roughness evolution and highlight trends which are incompatible with the idea of dominant surface diffusion. Alternative, nonlocal mechanisms such as the re-emission effect are discussed, which can partly explain the observed incompatibilities.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Dq Plasma-based ion implantation and deposition
68.35.Fx Diffusion; interface formation
68.55.ag Semiconductors
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