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20 Jul 2009

Volume 95, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 033502 (2009); http://dx.doi.org/10.1063/1.3178556 (3 pages)

Akihito Ikedo, Takahiro Kawashima, Takeshi Kawano, and Makoto Ishida
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Internal fields in solid electrolytes due to interface effects

Bjoern Martin and Herbert Kliem

Appl. Phys. Lett. 95, 032901 (2009); http://dx.doi.org/10.1063/1.3184791 (3 pages) | Cited 5 times

Online Publication Date: 20 July 2009

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The space charge distribution and therefore the distribution of the internal potential in ion-conducting polymers can strongly be influenced by electrode effects. Due to image forces the electrodes attract mobile ions to the electrolyte/electrode interface. Simulations performed with a three-dimensional hopping model yield a charge accumulation of mobile ions at the electrodes as well as a depletion zone near this accumulation layer even without external applied field. The resulting potential shows a maximum in the middle of the sample. Measurements of the surface potential performed with a scanning Kelvin probe using polyethylene oxide confirm the model.
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66.30.hk Polymers
82.45.Fk Electrodes
77.22.Jp Dielectric breakdown and space-charge effects
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.45.Gj Electrolytes
73.25.+i Surface conductivity and carrier phenomena

Self-organized (Ba0.7,Sr0.3)TiO3 nanocomposite with improved figure of merit

B. Guigues, X. H. Zhu, J. Sobotka, N. Guiblin, E. Defaÿ, and B. Dkhil

Appl. Phys. Lett. 95, 032902 (2009); http://dx.doi.org/10.1063/1.3179523 (3 pages) | Cited 2 times

Online Publication Date: 20 July 2009

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Self-organized (Ba0.7,Sr0.3) TiO3 (BST) thin film nanocomposites with spherical inclusions have been fabricated. The composite structures were built up from initial amorphous BST films, thanks to an adequate thermal treatment. Microstructural and electrical analyses are reported as a function of crystallization ratio q. Our experimental results agree with recently developed models of composite materials. The main conclusion of the study is that high dielectric performances can be obtained with a half-crystallized material. For a 630 °C annealing temperature (q-ratio equal to 0.47), Vendik commutation quality factor reaches 1500, which is two times greater than a fully crystallized sample annealed at 700 °C.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.16.-c Methods of micro- and nanofabrication and processing
81.40.Gh Other heat and thermomechanical treatments
61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.46.Hk Nanocrystals

Electronic transport through in situ grown ultrathin BaTiO3 films

Junsoo Shin, S. V. Kalinin, E. W. Plummer, and A. P. Baddorf

Appl. Phys. Lett. 95, 032903 (2009); http://dx.doi.org/10.1063/1.3186067 (3 pages) | Cited 4 times

Online Publication Date: 20 July 2009

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Polarization-mediated transport properties of ultrathin (4 and 10 unit cells) fully strained polar BaTiO3 films are studied by scanning tunneling microscopy and spectroscopy. High quality BaTiO3 films are grown on SrRuO3/SrTiO3 by pulsed laser deposition and characterized in situ in ultrahigh vacuum. Previous structural measurements have shown that these films are polarized. Current-voltage curves exhibit features at ∼ ±2.5 V, which show hysteresis consistent with bias-induced polarization switching. The intensity and voltage of the features indicate a stochastic process. These features are not observed on nonpolarized SrTiO3 films grown and characterized similarly.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.15.Fg Pulsed laser ablation deposition
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization

Electric-field-induced phase transformation at a lead-free morphotropic phase boundary: Case study in a 93%(Bi0.5Na0.5)TiO3–7% BaTiO3 piezoelectric ceramic

John E. Daniels, Wook Jo, Jürgen Rödel, and Jacob L. Jones

Appl. Phys. Lett. 95, 032904 (2009); http://dx.doi.org/10.1063/1.3182679 (3 pages) | Cited 63 times

Online Publication Date: 21 July 2009

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The electric-field-induced strain in 93%(Bi0.5Na0.5)TiO3–7%BaTiO3 polycrystalline ceramic is shown to be the result of an electric-field-induced phase transformation from a pseudocubic to tetragonal symmetry. High-energy x-ray diffraction is used to illustrate the microstructural nature of the transformation. A combination of induced unit cell volumetric changes, domain texture, and anisotropic lattice strains are responsible for the observed macroscopic strain. This strain mechanism is not analogous to the high electric-field-induced strains observed in lead-based morphotropic phase boundary systems. Thus, systems which appear cubic under zero field should not be excluded from the search for lead-free piezoelectric compositions.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
64.70.K- Solid-solid transitions
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.-j Piezoelectricity and electromechanical effects

Improved thermal stability, interface, and electrical properties of HfO2 films prepared by pulsed laser deposition using in situ ionized nitrogen

Yi Wang, Hao Wang, Jun Zhang, Hanbin Wang, Cong Ye, Yong Jiang, and Qing Wang

Appl. Phys. Lett. 95, 032905 (2009); http://dx.doi.org/10.1063/1.3184577 (3 pages) | Cited 6 times

Online Publication Date: 21 July 2009

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Nitrogen is incorporated into thin HfO2 films by pulsed laser deposition using in situ ionized nitrogen. The improved thermal stability and interfacial microstructure are further confirmed by high-resolution transmission electron microscopy. The composition of the thin film is investigated by x-ray photoelectron spectroscopy and electron energy-loss spectroscopy. Electrical studies show a property permittivity of 27.7 and low leakage current density were achieved by incorporation of a small amount (about 1 at. %) of nitrogen. The dominant conduction mechanisms of the Pt/HfO2/p-Si structure are trap-assisted tunneling and Schottky emission at low electric field for the gate and substrate injection, respectively.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.30.+y Surface double layers, Schottky barriers, and work functions
77.22.Ch Permittivity (dielectric function)
73.43.Jn Tunneling
81.15.Fg Pulsed laser ablation deposition
79.60.Dp Adsorbed layers and thin films
77.55.-g Dielectric thin films
79.20.Uv Electron energy loss spectroscopy

Molecular beam epitaxy of SrTiO3 with a growth window

Bharat Jalan, Pouya Moetakef, and Susanne Stemmer

Appl. Phys. Lett. 95, 032906 (2009); http://dx.doi.org/10.1063/1.3184767 (3 pages) | Cited 19 times

Online Publication Date: 23 July 2009

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Many complex oxides with only nonvolatile constituents do not have a wide growth window in conventional molecular beam epitaxy (MBE) approaches, which makes it difficult to obtain stoichiometric films. Here it is shown that a growth window in which the stoichiometry is self-regulating can be achieved for SrTiO3 films by using a hybrid MBE approach that uses a volatile metal-organic source for Ti, titanium tetra isopropoxide (TTIP). The growth window widens and shifts to higher TTIP/Sr flux ratios with increasing temperature, showing that it is related to the desorption of the volatile TTIP. We demonstrate stoichiometric, highly perfect, insulating SrTiO3 films. The approach can be adapted for the growth of other complex oxides that previously were believed to have no wide MBE growth window.
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68.55.aj Insulators
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.43.Nr Desorption kinetics
61.66.Bi Elemental solids
61.66.Dk Alloys

Oxidant prepulsing of Ge (100) prior to atomic layer deposition of Al2O3: In situ surface characterization

Shankar Swaminathan, Yasuhiro Oshima, Michael A. Kelly, and Paul C. McIntyre

Appl. Phys. Lett. 95, 032907 (2009); http://dx.doi.org/10.1063/1.3177195 (3 pages) | Cited 14 times

Online Publication Date: 24 July 2009

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We investigate the effects of H2O oxidant pulsing of Ge (100) substrates prior to Al2O3 atomic layer deposition (ALD) to synthesize metal-oxide-semiconductor devices. The prepulsing reduces the hysteresis in capacitance-voltage measurements from 490 to 30 mV at the flatband voltage and appears to reduce the density of fast interface states while causing a small increase in the midgap interface state density. Real-time x-ray photoelectron spectroscopy during prepulsing revealed the dynamic evolution of Ge–O bonding states and the formation of a surface layer with ∼ 70% hydroxyl termination which appears to produce a less defective interfacial region after subsequent Al2O3 ALD.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
79.60.Jv Interfaces; heterostructures; nanostructures
73.20.At Surface states, band structure, electron density of states
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