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20 Jul 2009

Volume 95, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 033502 (2009); http://dx.doi.org/10.1063/1.3178556 (3 pages)

Akihito Ikedo, Takahiro Kawashima, Takeshi Kawano, and Makoto Ishida
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Enhanced surface acoustic wave biosensor performance via delay path modifications in mutually interacting multidirectional transducer configuration: A computational study

Reetu Singh, Subramanian K. R. S. Sankaranarayanan, and Venkat R. Bhethanabotla

Appl. Phys. Lett. 95, 034101 (2009); http://dx.doi.org/10.1063/1.3184765 (3 pages)

Online Publication Date: 21 July 2009

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Multidirectional interdigital transducers (IDTs) combined with delay path modifications for surface acoustic wave (SAW) sensors in a Langasite substrate are shown to positively and significantly impact power consumption, device sensitivity, and biofouling elimination capability. Simulated devices have mutually interacting orthogonal IDTs and microcavities of square cross sections of side λ/2, and of different depths located in the middle of the delay path. A combined orthogonal IDT-polystyrene filled microcavities device (dimensions λ/2×λ/2×λ/2), with constructive wave interference and enhanced SAW entrapment in the delay region, is shown to be most efficient and reduces insertion loss by 23.6 dB, generates two orders of magnitude larger streaming forces, and exhibits velocity sensitivity 100% larger than that of a simulated standard SAW sensor with unidirectional IDTs along the (0, 22, 90) direction.
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87.85.fk Biosensors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Uniaxial strain relaxation in He+ ion implanted (110) oriented SiGe layers

R. A. Minamisawa, D. Buca, H. Trinkaus, B. Holländer, S. Mantl, V. Destefanis, and J. M. Hartmann

Appl. Phys. Lett. 95, 034102 (2009); http://dx.doi.org/10.1063/1.3180279 (3 pages) | Cited 4 times

Online Publication Date: 21 July 2009

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Uniaxially strained (011)Si is attractive for high performance p-channel metal oxide semiconductor field effect transistor devices due to the predicted high hole mobilities. Here, we demonstrate the realization of purely uniaxially relaxed (011) SiGe virtual substrates by He+ ion implantation and thermal annealing. Perfect uniaxial relaxation is evidenced by precise ion channeling angular yield scan measurements and plan view transmission electron microscopy as predicted theoretically on the basis of the layer symmetry dependent dislocation dynamics. Strikingly, misfit dislocations propagate exclusively along the [0math1] direction in the (011) oriented crystal and, in contrast to (100)Si, no crosshatch is formed. We describe dislocation formation and propagation inducing strain relaxation of (011)SiGe and enlighten the differences to (100) oriented SiGe on Si.
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61.72.up Other materials
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
68.35.Gy Mechanical properties; surface strains
61.72.Cc Kinetics of defect formation and annealing

Origin of the spatial resolution in atom probe microscopy

Baptiste Gault, Michael P. Moody, Frederic de Geuser, Daniel Haley, Leigh T. Stephenson, and Simon P. Ringer

Appl. Phys. Lett. 95, 034103 (2009); http://dx.doi.org/10.1063/1.3182351 (3 pages) | Cited 26 times

Online Publication Date: 21 July 2009

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Atom-probe microscopy offers unprecedented insights on the subnanometer structure and chemistry of materials in three dimensions. The actual spatial resolution achievable is however still an uncertain parameter, as no comprehensive study has been undertaken to unveil the physics underpinning how key parameters impact the performance. Here, we present a comprehensive investigation of the in-depth and lateral resolution of the technique. We discuss methods to estimate the resolution and show a resolution better than 20 pm in-depth. Models to support our results were developed and are discussed in the present letter.
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07.79.-v Scanning probe microscopes and components

Toward a magnetoresistive chip cytometer: Integrated detection of magnetic beads flowing at cm/s velocities in microfluidic channels

J. Loureiro, R. Ferreira, S. Cardoso, P. P. Freitas, J. Germano, C. Fermon, G. Arrias, M. Pannetier-Lecoeur, F. Rivadulla, and J. Rivas

Appl. Phys. Lett. 95, 034104 (2009); http://dx.doi.org/10.1063/1.3182791 (3 pages) | Cited 12 times

Online Publication Date: 21 July 2009

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This work describes an integrated device comprising microfluidic channels and incorporated spin-valve sensors sensitive enough to count, determine the magnetic orientation, flowing height, and speed of single micron-sized magnetic beads moving with velocities of 8–35 mm/s. Sensor signals of 3–100 μVp-p correspond to bead moments at different directions indicating a physical rotation of the beads and a slow response (seconds) of the bead moment to magnetizing field changes.
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87.85.fk Biosensors
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
47.85.Np Fluidics
07.10.Cm Micromechanical devices and systems

Piezoelectric oxide semiconductor field effect transistor touch sensing devices

Ravinder S. Dahiya, Giorgio Metta, Maurizio Valle, Andrea Adami, and Leandro Lorenzelli

Appl. Phys. Lett. 95, 034105 (2009); http://dx.doi.org/10.1063/1.3184579 (3 pages) | Cited 11 times

Online Publication Date: 21 July 2009

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This work presents piezoelectric oxide semiconductor field effect transistor (POSFET) based touch sensing devices. These devices are fabricated by spin coating thin ( ∼ 2.5 μm) piezoelectric polymer film directly on to the gate area of metal oxide semiconductor (MOS) transistor. The polymer film is processed in situ and challenging issues such as in situ poling of piezoelectric polymer film, without damaging or altering the characteristics of underlying MOS devices, are successfully dealt with. The POSFET device represents an integral “sensotronic” unit comprising of transducer and the transistor—thereby sensing as well as conditioning (and processing) the touch signal at “same site.”
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85.30.Tv Field effect devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Causal association of electromagnetic signals using the Cayley–Menger determinant

Samuel Picton Drake, Brian D. O. Anderson, and Changbin Yu

Appl. Phys. Lett. 95, 034106 (2009); http://dx.doi.org/10.1063/1.3180815 (3 pages)

Online Publication Date: 24 July 2009

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In complex electromagnetic environments it can often be difficult to determine whether signals received by an antenna array emanated from the same source. The failure to appropriately assign signal reception events to the correct emission event makes accurate localization of the signal source impossible. In this paper we show that as the received signal events must lie on the light-cone of the emission event the Cayley–Menger determinate calculated from using the light-cone geodesic distances between received signals must be zero. This result enables us to construct an algorithm for sorting received signals into groups corresponding to the same far-field emission.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation

Enhancement in optical absorption of silicon fibrous nanostructure produced using femtosecond laser ablation

Abdul Salam Mahmood, M. Sivakumar, Krishnan Venkatakrishnan, and Bo Tan

Appl. Phys. Lett. 95, 034107 (2009); http://dx.doi.org/10.1063/1.3168499 (3 pages) | Cited 8 times

Online Publication Date: 24 July 2009

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Fibrous nanostructures are proposed for the application of solar cell. Irradiation of silicon surface with a few hundred femtosecond laser pulses of fluence 13 kJ/m2 at 13 MHz pulse frequency in air atmosphere results in the formation of fibrous nanostructure layer on the treated surface that leads to a significant decrease in the reflection of visible radiation. For the visible wavelength, the decreased reflection is a result of the nature of the nanostructure. The Raman peak shift in the irradiated surface confirms that the surface is changed to amorphous silicon due to fibrous nanostructure formation.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.16.-c Methods of micro- and nanofabrication and processing
78.30.Am Elemental semiconductors and insulators
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.68.+m Optical properties of surfaces
68.47.Fg Semiconductor surfaces
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