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Applied Physics Letters / Volume 95 / Issue 4 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 95, 043109 (2009); http://dx.doi.org/10.1063/1.3176407 (3 pages)

Bendable high-frequency microwave switches formed with single-crystal silicon nanomembranes on plastic substrates

Hao-Chih Yuan1, Guoxuan Qin1, George K. Celler2, and Zhenqiang Ma1

1Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
2Soitec USA, 2 Centennial Drive, Peabody, Massachusetts 01960, USA

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(Received 23 April 2009; accepted 15 June 2009; published online 29 July 2009)

This letter presents realization of bendable rf switches operating at microwave frequencies formed with single-crystal Si nanomembranes (SiNMs) on a plastic substrate. Selectively doped 200-nm-thick SiNM is lifted off from silicon-on-insulator and transferred to a polymer substrate to form lateral P-intrinsic-N (PIN) diodes with minimized parasitic resistances. A single-pole single-throw switch, consisting of two PIN diodes connected in a shunt-series configuration, demonstrated very low insertion loss and high isolation from dc up to 20 GHz. The level of performance indicates a promise of properly processed single-crystal semiconductor nanomembranes for high-frequency applications in a number of consumer and military systems.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

flexible electronics, isolation technology, membranes, microwave switches, nanostructured materials, p-i-n diodes, polymers, silicon, silicon-on-insulator

PACS

  • 85.30.Kk

    Junction diodes

  • 81.07.Bc

    Nanocrystalline materials

  • 84.32.Dd

    Connectors, relays, and switches

  • 84.40.-x

    Radiowave and microwave (including millimeter wave) technology

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3176407

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    H. -C. Yuan and Z. Ma, Appl. Phys. Lett. 89, 212105 (2006)APPLAB000089000021212105000001.

    H. -C. Yuan, G. K. Celler, and Z. Ma, J. Appl. Phys. 102, 034501 (2007)JAPIAU000102000003034501000001.


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