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27 Jul 2009

Volume 95, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 95, 043110 (2009); http://dx.doi.org/10.1063/1.3184784 (3 pages)

Felix Loske and Angelika Kühnle
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Electro-optical light scattering shutter using electrospun cellulose-based nano- and microfibers

P. L. Almeida, S. Kundu, J. P. Borges, M. H. Godinho, and J. L. Figueirinhas

Appl. Phys. Lett. 95, 043501 (2009); http://dx.doi.org/10.1063/1.3186640 (3 pages) | Cited 3 times

Online Publication Date: 27 July 2009

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Electrospun cellulose-based nano and microfibers and a nematic liquid crystal are used to assemble an electro-optical (EO) light-scattering device that shows enhanced characteristics when compared to similar devices. Based on the controlled scattering of light in the composite system, the device can achieve light transmission coefficients tunable from 1% up to around 89%. Simulation of the EO behavior indicates that the roughness of the polymer-liquid crystal interface is crucial for the optical performance of the device.
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42.79.Kr Display devices, liquid-crystal devices

Dopant distribution in gate electrode of n- and p-type metal-oxide-semiconductor field effect transistor by laser-assisted atom probe

K. Inoue, F. Yano, A. Nishida, H. Takamizawa, T. Tsunomura, Y. Nagai, and M. Hasegawa

Appl. Phys. Lett. 95, 043502 (2009); http://dx.doi.org/10.1063/1.3186788 (3 pages) | Cited 16 times

Online Publication Date: 27 July 2009

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Three dimensional dopant distributions in polycrystalline Si gate of n-type (n-) and p-type (p-) metal-oxide-semiconductor field effect transistor (MOSFET) structure were investigated by laser-assisted three dimensional atom probe. The remarkable difference in dopant distribution between n-MOSFET and p-MOSFET was clearly observed. In n-MOSFET gate, As and P atoms were segregated at grain boundaries and the interface between gate and gate oxide. No diffusion of As and P atoms into the gate oxide was observed. On the other hand, in p-MOSFET, no segregations of B atoms at grain boundaries or the interface were observed, and diffusion of B atoms into the gate oxide was directly observed.
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85.30.Tv Field effect devices

Phase-transition driven memristive system

T. Driscoll, H.-T. Kim, B.-G. Chae, M. Di Ventra, and D. N. Basov

Appl. Phys. Lett. 95, 043503 (2009); http://dx.doi.org/10.1063/1.3187531 (3 pages) | Cited 53 times

Online Publication Date: 27 July 2009

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Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of vanadium dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss details of this form of phase-change memristance and potential applications of our device. Most importantly, our results demonstrate the potential for a realization of memristive systems based on phase-transition phenomena.
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84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)

Tunable terahertz band planar Bragg reflectors

N. S. Ginzburg, A. M. Malkin, N. Yu. Peskov, A. S. Sergeev, V. Yu. Zaslavsky, K. Kamada, and Y. Soga

Appl. Phys. Lett. 95, 043504 (2009); http://dx.doi.org/10.1063/1.3184592 (3 pages) | Cited 11 times

Online Publication Date: 27 July 2009

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A tunable planar narrow-band Bragg reflector based on coupling of the two propagating modes and a cutoff mode is considered. Coupled-wave analysis together with direct numerical simulations demonstrate operation of the proposed scheme up to the terahertz frequency band. Compatibility with the transportation of an intense electron beam encourages the use of a novel Bragg reflector in powerful long-pulse free electron lasers.
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42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers
42.79.Fm Reflectors, beam splitters, and deflectors

Solution-processable polymer solar cells from a poly(3-hexylthiophene)/[6,6]-phenyl C61-butyric acidmethyl ester concentration graded bilayers

Dong Hwan Wang, Hang Ken Lee, Dae-Geun Choi, Jong Hyeok Park, and O Ok Park

Appl. Phys. Lett. 95, 043505 (2009); http://dx.doi.org/10.1063/1.3192360 (3 pages) | Cited 21 times

Online Publication Date: 30 July 2009

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Polymer photovoltaic (PV) device prepared with a vertical phase separation has intensified the research on the effectiveness of the concentration graded active layer. In this paper, a polymer PV device with a poly(3-hexylthiophene)/[6,6]-phenyl C61-butyric acidmethyl ester (P3HT/PCBM) bilayers active film with a concentration gradient has been fabricated via solution process. The concentration variation has been confirmed by the Auger spectroscopy. The devices showed an enhanced photocurrent density and power conversion efficiency compared to those of the bulk heterojunction PV prepared under the same fabrication condition.
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84.60.Jt Photoelectric conversion
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
72.40.+w Photoconduction and photovoltaic effects
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