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27 Jul 2009

Volume 95, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 95, 043110 (2009); http://dx.doi.org/10.1063/1.3184784 (3 pages)

Felix Loske and Angelika Kühnle
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Oxygen passivation of vacancy defects in metal-nitride gated HfO2/SiO2/Si devices

E. Cartier, M. Hopstaken, and M. Copel

Appl. Phys. Lett. 95, 042901 (2009); http://dx.doi.org/10.1063/1.3186075 (3 pages) | Cited 16 times

Online Publication Date: 27 July 2009

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We show that oxygen can be diffused through thin TiN layers to correct flatband voltage offsets in HfO2/SiO2/Si structures, achieving nearly band-edge capacitance voltage characteristics without undue growth of parasitic SiO2. Photoemission reveals that the TiN remains conductive despite mild oxidation, although over-oxidation results in insulating layers. Secondary ionization mass spectroscopy of samples treated with isotopically labeled 18O was used to assess how much oxygen is required to fully passivate the defects caused by thermal processing of metallized HfO2/SiO2/Si devices.
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81.65.Rv Passivation
61.72.jd Vacancies
79.60.Jv Interfaces; heterostructures; nanostructures
81.65.Mq Oxidation
84.32.Tt Capacitors
85.30.Tv Field effect devices

Polarization rotation contributions to dielectric nonlinearity in 65Pb(Mg1/3Nb2/3)O3–35PbTiO3 single crystals

Ashley Bernal and Nazanin Bassiri-Gharb

Appl. Phys. Lett. 95, 042902 (2009); http://dx.doi.org/10.1063/1.3187916 (3 pages) | Cited 5 times

Online Publication Date: 27 July 2009

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The dielectric response of 65Pb(Mg1/3Nb2/3)O3–35PbTiO3 (PMN-35PT) single crystals is reported for ac field amplitudes up to ∼ 3.5 kV/cm over a frequency range from 3 Hz to 1 kHz. The nonlinear dielectric response is described by a Rayleigh-like analysis, indicating extrinsic contributions from nonlinear and hysteretic motion of internal interfaces (phase boundaries and domain walls). Furthermore, the extrinsic contributions are more than five times higher in the [110]- and [001]-poled crystals than crystals poled along the [111] axis. This is attributed to the ease of the polarization vector rotation along the MC mirror plane between orthorhombic and tetragonal phases of PMN-35PT.
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77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point

Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature

C. Y. Kim, S. W. Cho, M.-H. Cho, K. B. Chung, D. C. Suh, D.-H. Ko, C.-H. An, H. Kim, and H. J. Lee

Appl. Phys. Lett. 95, 042903 (2009); http://dx.doi.org/10.1063/1.3182702 (3 pages) | Cited 6 times

Online Publication Date: 28 July 2009

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The effects of postannealing temperature on the crystal structure and energy band gap (Eg) values of atomic-layer-deposited HfO2 films grown on a GaAs (100) substrate were investigated. In postannealed HfO2 films prepared using a rapid thermal annealing (RTA) process in a N2 ambient at temperatures over 600 °C, the initially produced, partially crystallized HfO2 film changed into a well-ordered crystalline structure with no detectable interfacial layer between the film and the GaAs substrate. In the case of a RTA prepared at 700 °C, the thickness of the film was relatively increased compared to that of an as-grown film. Changes in the depth profile data related to stoichiometry and electronic structure after the annealing treatment indicated that Ga oxide is formed within the HfO2 film during the RTA. The formation of Ga oxide in the film significantly affected the Eg values, i.e., the Eg changed from 5.5 for an as-grown film to 4.7 eV for a film annealed at 700 °C.
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77.55.-g Dielectric thin films
68.55.aj Insulators
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
71.20.Ps Other inorganic compounds
61.72.Cc Kinetics of defect formation and annealing

Degenerate rhombohedral and orthorhombic states in Ca-substituted Na0.5Bi0.5TiO3

Rajeev Ranjan, V. Kothai, Rohini Garg, Anupriya Agrawal, Anatoliy Senyshyn, and Hans Boysen

Appl. Phys. Lett. 95, 042904 (2009); http://dx.doi.org/10.1063/1.3193658 (3 pages) | Cited 6 times

Online Publication Date: 31 July 2009

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Neutron powder diffraction and temperature dependent dielectric studies were carried out on Ca-substituted Na0.5Bi0.5TiO3, i.e., (Na0.5Bi0.5)1−xCaxTiO3. Stabilization of an orthorhombic phase even at a low Ca concentration (0.05<x ≤ 0.10) suggests that Na0.5Bi0.5TiO3 (NBT) is susceptible to orthorhombic distortion. The orthorhombic and rhombohedral phases coexist for x = 0.10, suggesting these phases to be nearly degenerate. The orthorhombic distortion favoring tendency of Ca assists in promoting the inherent instability with regard to this structure in pure NBT, which was reported recently.
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77.22.Ch Permittivity (dielectric function)
61.66.Fn Inorganic compounds
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.05.fm Neutron diffraction
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling
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