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27 Jul 2009

Volume 95, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 95, 043110 (2009); http://dx.doi.org/10.1063/1.3184784 (3 pages)

Felix Loske and Angelika Kühnle
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Improving thermoelectric performance of caged compounds through light-element filling

Y. Z. Pei, Jiong Yang, L. D. Chen, W. Zhang, J. R. Salvador, and Jihui Yang

Appl. Phys. Lett. 95, 042101 (2009); http://dx.doi.org/10.1063/1.3182800 (3 pages) | Cited 19 times

Online Publication Date: 27 July 2009

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Heavy elements filling have been considered the most effective way to improve the thermoelectric performance of caged compounds such as CoSb3 by reducing kL. Here, we show an opposite example of filling a light element, Na, into CoSb3 for obtaining high thermoelectric figure of merit ZT.ZT = 1.25 at 850 K for Na0.48Co4Sb12 is one of the highest values among all reported single-element-filled CoSb3. The Na-filling scatters phonons less effectively but it results in relatively high mobility thus large power factor. This most likely comes from the extra electronic states near the Fermi level induced by Na.
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72.15.Jf Thermoelectric and thermomagnetic effects
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
71.20.Eh Rare earth metals and alloys
63.20.-e Phonons in crystal lattices

Ammonia: A source of hydrogen dopant for InN layers grown by metal organic vapor phase epitaxy

S. Ruffenach, M. Moret, O. Briot, and B. Gil

Appl. Phys. Lett. 95, 042102 (2009); http://dx.doi.org/10.1063/1.3189212 (3 pages) | Cited 11 times

Online Publication Date: 27 July 2009

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Thermal annealing of InN layers grown by metal organic vapor phase epitaxy (MOVPE) is investigated in nitrogen atmosphere for temperatures ranging from 400 to 550 °C and for heat treatment times up to 12 h. This treatment results in hydrogen outdiffusion, lowering significantly the residual n-type background doping. This mechanism is shown to be reversible through thermal annealing under ammonia atmosphere, responsible of hydrogen incorporation during growth. These results establish a MOVPE process allowing the obtention of InN samples, which exhibit similar electrical properties than molecular beam epitaxy grown samples: a key issue in view of future industrial production of InN based devices.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
61.72.uj III-V and II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing

High performance AlGaN/GaN power switch with HfO2 insulation

Junxia Shi, Lester F. Eastman, Xiaobin Xin, and Milan Pophristic

Appl. Phys. Lett. 95, 042103 (2009); http://dx.doi.org/10.1063/1.3190506 (3 pages) | Cited 18 times

Online Publication Date: 28 July 2009

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High performance AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor was fabricated using HfO2 as the surface passivation and gate insulator. The gate and drain leakage currents are drastically reduced to tens of nanoamperes before breakdown. Without field plates, for 10 μm of gate-drain spacing, the off-state breakdown voltage is 1035 V with a specific on resistance of 0.9 mΩ cm2. In addition, there is no current slump observed from the pulse measurements. This is the best performance reported on GaN-based power-switching devices on sapphire up to now, which efficiently combines excellent device forward, reverse, and switching characteristics.
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85.30.Tv Field effect devices
81.05.Ea III-V semiconductors

Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals

Wen-Yuan Chang (張文淵), Kai-Jung Cheng (鄭凱嶸), Jui-Ming Tsai (蔡濬名), Hung-Jen Chen (陳泓任), Frederick Chen (陳達), Ming-Jinn Tsai (蔡銘進), and Tai-Bor Wu (吳泰伯)

Appl. Phys. Lett. 95, 042104 (2009); http://dx.doi.org/10.1063/1.3193656 (3 pages) | Cited 24 times

Online Publication Date: 31 July 2009

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We have fabricated TiO2 thin films with embedded Pt nanocrystals (Pt-NCs) and investigated the resistive switching characteristics for nonvolatile memory application. Reversible and steady bistable resistance switching behavior was observed for the Pt/TiO2/Pt capacitors with Pt-NCs embedded in the TiO2 films. Moreover, an improvement in the stability of resistance switching and retention properties was also achieved from the embedding of uniform and fine Pt-NCs.
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73.40.Rw Metal-insulator-metal structures
73.61.Ng Insulators
84.32.Tt Capacitors
84.30.Sk Pulse and digital circuits
72.60.+g Mixed conductivity and conductivity transitions
81.16.-c Methods of micro- and nanofabrication and processing

Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices

Min Kyu Yang, Jae-Wan Park, Tae Kuk Ko, and Jeon-Kook Lee

Appl. Phys. Lett. 95, 042105 (2009); http://dx.doi.org/10.1063/1.3191674 (3 pages) | Cited 38 times

Online Publication Date: 31 July 2009

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This study examined the electrical properties of Ti/MnO2/Pt devices with stable and reproducible bipolar resistive switching behavior. The dependency of the memory behavior on the cell area and operating temperature suggest that the conducting mechanism in the low resistance states is due to the locally conducting filaments formed. X-ray photoelectron spectroscopy showed that nonlattice oxygen ions form at the MnO2 surface. The mechanism of resistance switching in the system examined involves the generation and recovery of oxygen vacancies with the nonlattice oxygen ions.
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77.80.Fm Switching phenomena
73.40.Rw Metal-insulator-metal structures
79.60.Jv Interfaces; heterostructures; nanostructures
61.72.jd Vacancies
85.50.Gk Non-volatile ferroelectric memories
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